554 resultados para germanium
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We report measurements of the nonlinear (NL) refractive index n(2) of lead-germanium films (LGFs) containing Cu and Cu(2)O nanoparticles (NPs). The thermally managed eclipse Z-scan technique with 150 fs pulses from a laser operating at 800 nm was used. The NL refractive index measured, n(2)=6.3x10(-12) cm(2)/W has electronic origin and the NL absorption coefficient alpha(2) is smaller than 660 cm/GW. The figure of merit n(2)/lambda alpha(2) is enhanced by more than two orders of magnitude in comparison with the result for the LGFs without the copper based NPs. (C) 2008 American Institute of Physics.
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Magneto-optical rotation was measured at room temperature for glasses containing Bi2O3-CdO-GeO2 (BCG), and Bi2O3-PbO-GeO2-B2O3 (BPGP). A pulsed magnetic field between 50 and 80 KG was used to measure Faraday rotation at 632.8 nm as a function of the concentration of Bi and Cd for BCG and Bi and Pb for BPGB. Verdet constant as high as 0.162 min G-1 cm-1 at 632.8 nm for the BPGB sample with the highest concentrations of Bi and Cd was found. Verdet constant increases linearly with the heavy-metal concentration for the BPGB whereas it reaches some saturation for the BCG system. Measurements of the magneto-optical rotation at other wavelengths in the visible and the refractive index at 632.8 nm are also reported. © 1998 Elsevier Science B.V. All rights reserved.
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Two series of glasses with composition (mol%) 70PbGeO3- 15PbF2-15CdF2, the first one with different Tm 3+ contents (0.2, 0.4, 0.6 and 0.8 mol%) and the second one with 0.2 mol% Tm3+ and different Ho3+ contents (0.1, 0.5, 1.0 and 1.5 mol%), have been prepared and some of their spectroscopic properties studied. Absorption in the visible-near infrared and emission in the near infrared region of the electromagnetic spectrum have been obtained. Concerning emission at the 1.4-1.5 μm region, optimization of rare earth ions content leads to 0.2 and 0.5 mol% for Tm3+ and Ho3+, respectively. We discuss potential application of these compositions. © 2005 Elsevier B.V. All rights reserved.
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The population inversion of the Tm3+ in GLKZ glass involved in the 1470 nm emission (3H4 → 3F 4) as a function of Tb (or Eu) concentration was calculated by computational simulation for a CW laser pumping at 792 nm. These calculations were performed using the experimental Tm→Tb an Tm→Eu transfer rates and the spectroscopic parameters of the Tm (0.1 mol %) system. The result shows that 0.2 mol % (Tb3+) and 0.4 mol % of Eu3+ ions propitiate best population inversion of Tm3+ (0.1 mol %) maximizing the amplification coefficient of germanate (GLKZ) glass when operating as laser intensity amplification at 1470 nm. Besides the effective deactivation of the 3F4 level, the presence of Tb3+ or Eu 3+ ions introduce a depopulation of the 3H4 emitting level by means of a cross relaxation process with Tm3+ ions. In spite of this, the whole effect is verified to be benefic for using Tm-doped GLKZ glass codoped with Tb3+ or Eu3+ as a suitable material for confectioning optical amplifiers that operates in the S-band for telecommunication.
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The infrared-to-visible frequency upconversion was investigated in Er 3+-doped Ga10Ge25S65 glass and in the transparent glass-ceramic obtained by heat-treatment of the glass above its glass-transition temperature. Continuous-wave and pulsed lasers operating at 980 nm and 1480 nm were used as excitation sources. The green (2H 11/2 → 4I15/2; 4S3/2 → 4I15/2) and red (4F9/2 → 4I15/2) photoluminescence (PL) signals due to the Er3+ ions were characterized. The PL decay times were influenced by energy transfer among Er3+ ions, by cross-relaxation processes and by energy transfer from the Er3+ ions to the host material. The PL from the Er3+ ions hosted in the crystalline phase was distinguished only when the glass-ceramic was excited by the 1480 nm pulsed laser. The excitation pathways responsible for the green and red PL bands are discussed to explain the differences between the spectra observed under continuous-wave and pulsed excitation. © 2013 American Institute of Physics.
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Germanium- and tellurium-based glasses have been largely studied due to their recognized potential for photonics. In this paper, we review our recent studies that include the investigation of the Stokes and anti-Stokes photoluminescence (PL) in different glass systems containing metallic and semiconductor nanoparticles (NPs). In the case of the samples with metallic NPs, the enhanced PL was attributed to the increased local field on the rare-earth ions located in the proximity of the NPs and/or the energy transfer from the metallic NPs to the rare-earth ions. For the glasses containing silicon NPs, the PL enhancement was mainly due to the energy transfer from the NPs to the Er3+ ions. The nonlinear (NL) optical properties of PbO-GeO 2 films containing gold NPs were also investigated. The experiments in the pico- and subpicosecond regimes revealed enhanced values of the NL refractive indices and large NL absorption coefficients in comparison with the films without gold NPs. The reported experiments demonstrate that germanate and tellurite glasses, having appropriate rare-earth ions doping and NPs concentration, are strong candidates for PL-based devices, all-optical switches, and optical limiting. © 2013 Cid Bartolomeu de Araujo et al.
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Pós-graduação em Ciência e Tecnologia de Materiais - FC
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Um novo método, simples e sensível para a determinação de arsênio em solo é proposto neste trabalho. Este método é baseado na redução de prata (I) e ferro (III) pela arsina seguida da reação de complexação do ferro (II) com o reagente espectrofotométrico 2-(5-bromo-2-piridilazo)-5-di-etilaminofenol (Br-PADAP). A determinação de arsênio apresentou uma sensitividade de Sandell de 3.1x10-4 cm-2, foi linear na faixa de 0.1 µg ml-1 to 2.0 µg ml-1 (r560 = 0.9995), apresentou uma absortividade molar de 2.45x105 l mol-1 cm-1 e um limite de detecção de 1.4 ng ml-1 (3s) estes dados foram obtidos para 10 ml de amostra. A seletividade foi melhorada com o uso de EDTA com agente mascarante. O método proposto foi aplicado na determinação do arsênio na presença de outros íons e em amostras de solo. Os resultados revelaram que antimônio (III), mercúrio (II), germânio (IV), platina (IV) interferem na análise em todas as proporções analisadas. As interferências podem ser facilmente removidas pelo uso do EDTA. A precisão e a exatidão deram resultados satisfatórios, com desvio padrão relativo abaixo de 5%. As recuperações de arsênio em solo variaram de 95,55 a 102,70% com uma média de 99,63%. Estes resultados demonstraram que o método proposto é aplicável para a análise do arsênio em diferentes amostras de solo.
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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The solar energy is far the largest source of energy available in earth and has attracted for milleniuns, the attention and interest for a rational use. The solar energy which strikes the Earth in one hour is bigger than the whole consume of energy in Earth in one year. Among the forms of transformation of this clean, renewable energy, the electrical conversion, photovoltaic cells, have the materials based on silicon or germanium semiconductors due to its technology and production processes involved still have a high production cost. An alternative to this solar cell is based on a synthetic dye and a semiconductor nanocrystalline TiO2, titanium dioxide, called DSC (Dye-Sensitized Cells), which have a cost of up to 80% lower than silicon cells
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Pós-graduação em Química - IQ
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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The objective of this paper is to show the dependence relationship between the crystallographic orientations upon brittle-to-ductile transition during diamond turning of monocrystalline silicon. Cutting tests were performed using a -5 degrees rake angle round nose diamond tool at different machining scales. At the micrometre level, the feedrate was kept constant at 2.5 micrometres per revolution (mu m/r), and the depth of cut was varied from 1 to 5 mu m. At the submicrometre level, the depth of cut was kept constant at 500 nm and the feedrate varied from 5 to 10 mu m/r. At the micrometre level, the uncut shoulder generated with an interrupted cutting test procedure provided a quantitative measurement of the ductile-to-brittle transition. Results show that the critical chip thickness in silicon for ductile material removal reaches a maximum of 285 nm in the [100] direction and a minimum of 115 nm in the [110] direction, when the depth of cut was 5 mu m. It was found that when a submicrometre depth of cut was applied, microcracks were revealed in the [110] direction, which is the softer direction in silicon. Micro Raman spectroscopy was used to estimate surface residual stress after machining. Compressive residual stress in the range 142 MPa and smooth damage free surface finish was probed in the [100] direction for a depth of cut of 5 mu m, whereas residual stresses in the range 350 MPa and brittle damage was probed in the [110] direction for a depth of cut of 500 nm.
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Glasses in the system xGeO(2)-(1-x)NaPO3 (0 <= x <= 0.50) were prepared by conventional melting quenching and characterized by thermal analysis, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and P-31 nuclear magnetic resonance (MAS NMR) techniques. The deconvolution of the latter spectra was aided by homonuclear J-resolved and refocused INADEQUATE techniques. The combined analyses of P-31 MAS NMR and O-1s XPS lineshapes, taking charge and mass balance considerations into account, yield the detailed quantitative speciations of the phosphorus, germanium, and oxygen atoms and their respective connectivities. An internally consistent description is possible without invoking the formation of higher-coordinated germanium species in these glasses, in agreement with experimental evidence in the literature. The structure can be regarded, to a first approximation, as a network consisting of P-(2) and P-(3) tetrahedra linked via four-coordinate germanium. As implied by the appearance of P-(3) units, there is a moderate extent of network modifier sharing between phosphate and germanate network formers, as expressed by the formal melt reaction P-(2) + Ge-(4) -> P-(3) + Ge-(3). The equilibrium constant of this reaction is estimated as K = 0.52 +/- 0.11, indicating a preferential attraction of network modifier by the phosphorus component. These conclusions are qualitatively supported by Raman spectroscopy as well as P-31{Na-23} and P-31{Na-23} rotational echo double resonance (REDOR) NMR results. The combined interpretation of O-1s XPS and P-31 MAS NMR spectra shows further that there are clear deviations from a random connectivity scenario: heteroatomic P-O-Ge linkages are favored over homoatomic P-O-P and Ge-O-Ge linkages.
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The recent advances and promises in nanoscience and nanotechnology have been focused on hexagonal materials, mainly on carbon-based nanostructures. Recently, new candidates have been raised, where the greatest efforts are devoted to a new hexagonal and buckled material made of silicon, named Silicene. This new material presents an energy gap due to spin-orbit interaction of approximately 1.5 meV, where the measurement of quantum spin Hall effect(QSHE) can be made experimentally. Some investigations also show that the QSHE in 2D low-buckled hexagonal structures of germanium is present. Since the similarities, and at the same time the differences, between Si and Ge, over the years, have motivated a lot of investigations in these materials. In this work we performed systematic investigations on the electronic structure and band topology in both ordered and disordered SixGe1-x alloys monolayer with 2D honeycomb geometry by first-principles calculations. We show that an applied electric field can tune the gap size for both alloys. However, as a function of electric field, the disordered alloy presents a W-shaped behavior, similarly to the pure Si or Ge, whereas for the ordered alloy a V-shaped behavior is observed.