Steering circuitry for an electroluminescent panel /

Issued also as thesis (M.S.) University of Illinois.

Highly efficient luminescence from a hybrid state found in strongly quantum confined PbS nanocrystals

We report that high quality PbS nanocrystals, synthesized in the strong quantum confinement regime, have quantum yields as high as 70% at room temperature. We use a combination of modelling and photoluminescence up-conversion to show that we obtain a nearly monodisperse size distribution. Nevertheless, the emission displays a large nonresonant Stokes shift. The magnitude of the Stokes shift is found to be directly proportional to the degree of quantum confinement, from which we establish that the emission results from the recombination of one quantum confined charge carrier with one localized or surface-trapped charge carrier. Furthermore, the surface state energy is found to lie outside the bulk bandgap so that surface-related emission only commences for strongly quantum confined nanocrystals, thus highlighting a regime where improved surface passivation becomes necessary.

Optimization of microcavity OLED by varying the thickness of multi-layered mirror

We optimized the emission efficiency from a microcavity OLEDs consisting of widely used organic materials, N,N'-di(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) (Alq(3)) as emitting and electron transporting layer. LiF/Al was considered as a cathode, while metallic Ag anode was used. TiO2 and Al2O3 layers were stacked on top of the cathode to alter the properties of the top mirror. The electroluminescence emission spectra, electric field distribution inside the device, carrier density, recombination rate and exciton density were calculated as a function of the position of the emission layer. The results show that for certain TiO2 and Al2O3 layer thicknesses, light output is enhanced as a result of the increase in both the reflectance and transmittance of the top mirror. Once the optimum structure has been determined, the microcavity OLED devices can be fabricated and characterized, and comparisons between experiments and theory can be made.

Effect of anode material and cavity design on the performance of microcavity OLEDs

We report on the effect of the replacement of the conventional ITO anode with the semitransparent metallic material on the performance of microcavity OLEDs. We performed comprehensive simulations of the emission from microcavity OLEDs consisting of widely used organic materials, N,N′-di(naphthalene-1- yl)-N,N′-diphenylbenzidine (NPB) as a hole transport layer and tris (8-hydroxyquinoline) (Alq3) as emitting and electron transporting layer. Silver and LiF/Al were considered as a cathode, while metallic (Au and Ag) anode was used and simulations were performed on devices with both the metallic and conventional ITO anode. The electroluminescence emission spectra, electric field distribution inside the device, carrier density, recombination rate and exciton density were calculated as a function of the position of the emission layer. The results show that the metallic anode enhances light output and that optimum emission from a microcavity OLED is achieved when the position of the recombination region is aligned with the antinode of the standing wave inside the cavity. The microcavity OLED devices with Ag/Ag and Ag/Au mirrors were fabricated and characterized. The experimental results have been compared to the simulations and the influence of the different anode, emission region width and position on the performance of microcavity OLEDs was discussed.

Colour management of InGaN/GaN based monolithic two-wavelength LEDs

The recent advancement in the growth technology of InGaN/GaN has decently positioned InGaN based white LEDs to leap into the area of general or daily lighting. Monolithic white LEDs with multiple QWs were previously demonstrated by Damilano et al. [1] in 2001. However, there are several challenges yet to be overcome for InGaN based monolithic white LEDs to establish themselves as an alternative to other day-to-day lighting sources [2,3]. Alongside the key characteristics of luminous efficacy and EQE, colour rendering index (CRI) and correlated colour temperature (CCT) are important characteristics for these structures [2,4]. Investigated monolithic white structures were similar to that described in [5] and contained blue and green InGaN multiple QWs without short-period superlattice between them and emitting at 440 nm and 530 nm, respectively. The electroluminescence (EL) measurements were done in the CW and pulse current modes. An integration sphere (Labsphere “CDS 600” spectrometer) and a pulse generator (Agilent 8114A) were used to perform the measurements. The CCT and Green/Blue radiant flux ratio were investigated at extended operation currents from 100mA to 2A using current pulses from 100ns to 100μs with a duty cycle varying from 1% to 95%. The strong dependence of the CCT on the duty cycle value, with the CCT value decreasing by more than three times at high duty cycle values (shown at the 300 mA pulse operation current) was demonstrated (Fig. 1). The pulse width variation seems to have a negligible effect on the CCT (Fig. 1). To account for the joule heating, a duty cycle more than 1% was considered as an overheated mode. For the 1% duty cycle it was demonstrated that the CCT was tuneable in three times by modulating input current and pulse width (Fig. 2). It has also been demonstrated that there is a possibility of keeping luminous flux independent of pulse width variation for a constant value of current pulse (Fig. 3).

Correlation between p-GaN growth environment with electrical and optical properties of blue LEDs

Two blue (450 nm) light–emitting diodes (LED), which only differ in top p-GaN layer growth conditions, were comparatively investigated. I-V, C-V, TLM, Electroluminescence (EL) and Photoluminescence (PL) techniques were applied to clarify a correlation between MOCVD carrier gas and internal properties. The A-structure grown in the pure N2 environment demonstrated better parameters than the B-structure grown in the N2/H2 (1:1) gas mixture. The mixed growth atmosphere leaded to an increase of sheet resistances of p-GaN layer. EL and PL measurements confirmed the advantage of the pure N2 utilization, and C(VR) measurement pointed the increase of static charge concentration near the p-GaN interface in the B structure.

Dispositifs optoélectroniques à base de semi-conducteurs organiques en couches minces

Les petites molécules de type p à bandes interdites étroites sont de plus en plus perçues comme des remplaçantes possibles aux polymères semi-conducteurs actuellement utilisés conjointement avec des dérivés de fullerènes de type n, dans les cellules photovoltaïques organiques (OPV). Par contre, ces petites molécules tendent à cristalliser facilement lors de leur application en couches minces et forment difficilement des films homogènes appropriés. Des dispositifs OPV de type hétérojonction de masse ont été réalisés en ajoutant différentes espèces de polymères semi-conducteurs ou isolants, agissant comme matrices permettant de rectifier les inhomogénéités des films actifs et d’augmenter les performances des cellules photovoltaïques. Des polymères aux masses molaires spécifiques ont été synthétisés par réaction de Wittig en contrôlant précisément les ratios molaires des monomères et de la base utilisée. L’effet de la variation des masses molaires en fonction des morphologies de films minces obtenus et des performances des diodes organiques électroluminescentes reliées, a également été étudié. La microscopie électronique en transmission (MET) ou à balayage (MEB) a été employée en complément de la microscopie à force atomique (AFM) pour suivre l’évolution de la morphologie des films organiques minces. Une nouvelle méthode rapide de préparation des films pour l’imagerie MET sur substrats de silicium est également présentée et comparée à d’autres méthodes d’extraction. Motivé par le prix élevé et la rareté des métaux utilisés dans les substrats d’oxyde d’indium dopé à l’étain (ITO), le développement d’une nouvelle méthode de recyclage eco-responsable des substrats utilisés dans ces études est également présenté.

Dispositifs optoélectroniques à base de semi-conducteurs organiques en couches minces

Les petites molécules de type p à bandes interdites étroites sont de plus en plus perçues comme des remplaçantes possibles aux polymères semi-conducteurs actuellement utilisés conjointement avec des dérivés de fullerènes de type n, dans les cellules photovoltaïques organiques (OPV). Par contre, ces petites molécules tendent à cristalliser facilement lors de leur application en couches minces et forment difficilement des films homogènes appropriés. Des dispositifs OPV de type hétérojonction de masse ont été réalisés en ajoutant différentes espèces de polymères semi-conducteurs ou isolants, agissant comme matrices permettant de rectifier les inhomogénéités des films actifs et d’augmenter les performances des cellules photovoltaïques. Des polymères aux masses molaires spécifiques ont été synthétisés par réaction de Wittig en contrôlant précisément les ratios molaires des monomères et de la base utilisée. L’effet de la variation des masses molaires en fonction des morphologies de films minces obtenus et des performances des diodes organiques électroluminescentes reliées, a également été étudié. La microscopie électronique en transmission (MET) ou à balayage (MEB) a été employée en complément de la microscopie à force atomique (AFM) pour suivre l’évolution de la morphologie des films organiques minces. Une nouvelle méthode rapide de préparation des films pour l’imagerie MET sur substrats de silicium est également présentée et comparée à d’autres méthodes d’extraction. Motivé par le prix élevé et la rareté des métaux utilisés dans les substrats d’oxyde d’indium dopé à l’étain (ITO), le développement d’une nouvelle méthode de recyclage eco-responsable des substrats utilisés dans ces études est également présenté.

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.