Analysis of switched capacitor DC-DC step down converter

A 5V/1 V Switched Capacitor (SC) dc-dc converter designed for a 0.18μm CMOS process is analysed in detail, in this paper. Analytical equations are derived for the voltages and currents through the main components of the SC converter. The model includes switches, capacitors, equivalent series resistances and the load. The switches in the converter are represented by MOSFETs in the UMC 0.18μm CMOS process. The impact of system parameters on output voltage ripple are studied using the analytical expressions.

Advanced DC link capacitor technology application for a stiff voltage-source inverter

Problem of DC link size in a stiff voltage-source inverter for electric drive is described in the paper. Advantages of advanced film capacitor technology over conventional one for DC link application are reviewed. Conventional DC link capacitor selection methods are questioned in view of advanced capacitor technology utilization in stiff voltage-source inverter. For capacitor selection maximum ripple rms current point is shown. DC link ripple current spectrum analysis under modern PWM techniques is presented. Some capacitor selection recommendations are given. The analysis has been aided greatly by computer modeling in PSpice. ©2005 IEEE.

Orthorhombic α-moo 3 coatings with lath-shaped morphology developed by SPPS: Applications to super-capacitors

Electrical double-layer capacitors owe their large capacitance to the formation of a double-layer at the electrode/electrolyte interface of high surface area carbon-based electrode materials. Greater electrical energy storage capacity has been attributed to transition metal oxides/nitrides that undergo fast, reversible redox reactions at the electrode surface (pseudo-capacitive behavior) in addition to forming electrical double-layers. Solution Precursor Plasma Spray (SPPS) has shown promise for depositing porous, high surface area transition metal oxides. This investigation explored the potential of SPPS to fabricate a-MoO 3 coatings with micro-structures suitable for use as super-capacitor electrodes. The effects of number of spray passes, spray distance, solution concentration, flow rate and spray velocity on the chemistry and micro-structure of the a-MoO 3 deposits were examined. DTA/TGA, SEM, XRD, and electrochemical analyses were performed to characterize the coatings. The results demonstrate the importance of post-deposition heating of the deposit by subsequent passes of the plasma on the coating morphology. © ASM International.

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

Effect of dry oxidation on the performance of carbon nanotube arrays electrochemical capacitors

In this study, the effect of dry oxidation on the electrochemical properties of carbon nanotube arrays is investigated. Oxygenated surface functional groups were introduced to the arrays by oxygen plasma treatment, where their surface concentrations were varied by controlling the exposure time. The finding presented herein shows an augmentation of nearly thirty times in term of specific capacitance when the arrays are oxidized. Similar behavior is also observed in the non-aqueous electrolytes where the specific capacitance of the oxidized carbon nanotube arrays is measured more than three times higher than that of the pristine ones. However, overexposure to oxygen plasma treatment reverses this effect. At such high oxidation level, the damage to the graphitic structure becomes more pronounced such that the capacitive behavior of the arrays is overshadowed by their resistive behavior. These findings are important for further development of carbon nanotube based electrochemical capacitors. © 2012 Materials Research Society.

Use of vertically-aligned carbon nanotube array to enhance the performance of electrochemical capacitors

In the domain of energy storage, electrochemical capacitors have numerous applications ranging from hybrid vehicles to consumer electronics, with very high power density at the cost of relatively low energy storage. Here, we report an approach that uses vertically aligned carbon nanotube arrays as electrodes in electrochemical capacitors. Different electrolytes were used and multiple parameters of carbon nanotube array were compared: carbon nanotube arrays were shown to be two to three times better than graphite in term of specific capacitance, while the surface functionalization was demonstrated to be a critical factor in both aqueous and nonaqueous solutions to increase the specific capacitance. We found that a maximum energy density of 21 Wh/kg at a power density of 1.1 kW/kg for a hydrophilic electrode, could be easily achieved by using tetraethylammonium tetrafluoroborate in propylene carbonate. These are encouraging results in the path of energy-storage devices with both high energy density and power density, using only carbon-based materials for the electrodes with a very long lifetime, of tens of thousands of cycles. © 2011 IEEE.

Photoluminescence from C+ ion-implanted and electrochemical etched Si layers

The microstructural and optical analysis of Si layers emitting blue luminescence at about 431 nm is reported. These structures have been synthesized by C+ ion implantation and high-temperature annealing in hydrogen atmosphere and electrochemical etching sequentially. With the increasing etching time, the intensity of the blue peak increases at first, decreases then and is substituted by a new red peak at 716 nm at last, which shows characteristics of the emission of porous silicon. C=O compounds are induced during C+ implantation and nanometer silicon with embedded structure is formed during annealing, which contributes to the blue emission. The possible mechanism of photoluminescence is presented. (c) 2005 Elsevier B.V. All rights reserved.