New A2+Mo4+O3 oxides with defect spinel structure

New A2+Mo4+O3 oxides for A = Mn, Co and Zn crystallizing in a defect spinel structure have been prepared by hydrogen-reduction of the corresponding AMoO4 oxides. X-ray powder diffraction intensity analysis of the zinc compound indicates that the cation distribution is (Zn)t[Zn1/3Mo4/3□1/3]oO4. The defect spinels are metastable decomposing to a mixture of A2Mo3O8 and AO at high temperatures. Electrical and magnetic properties of the spinel phases are reported.

Coordination Behaviour of Imino Hydrazone Ligands towards Nickel (II) and Copper (II) Ions

The complexing ability of a new series of ligands, β-N-arylimine hydrazones, toward Ni (II) and Cu (II) ions has been studied. The isolated complexes are characterised on the basis of elemental analysis, spectroscopic methods and magnetic susceptibility measurements. The ligands are notentially bidentate in character coordinating to divalent metal ions through the N1 and N5 nitrogens. Square planar geometry of the metal ions is suggested on the basis of experimental evidence.

Motional Averaging of Electric Field Gradients. Temperature Dependence of Nqr in Sodium Chlorate and Copper Chlorate

Es wird die Temperaturabhiingigkeit der CI35-Kernquadrupolresonanz in Natriumchlorat und Kupferchlorat im Temperature von 77 bis 300 °K untersucht. Es wird gezeigt, daß die Annahmen, die in der Theorie von Bayer gemacht werden, fur Chlorate gelten. Die Frequenz der Torsionsschwingungen der ClO3-Gruppe wird folglich mit dieser Theorie berechnet. Der berechnete Wert der Torsionsfrequenz stimmt gut mit vorhandenen Werten der Ramanspektroskopie überein.

Copper Diffusion Barrier Deposition on Integrated Circuit Devices by Atomic Layer Deposition Technique

Transfer from aluminum to copper metallization and decreasing feature size of integrated circuit devices generated a need for new diffusion barrier process. Copper metallization comprised entirely new process flow with new materials such as low-k insulators and etch stoppers, which made the diffusion barrier integration demanding. Atomic Layer Deposition technique was seen as one of the most promising techniques to deposit copper diffusion barrier for future devices. Atomic Layer Deposition technique was utilized to deposit titanium nitride, tungsten nitride, and tungsten nitride carbide diffusion barriers. Titanium nitride was deposited with a conventional process, and also with new in situ reduction process where titanium metal was used as a reducing agent. Tungsten nitride was deposited with a well-known process from tungsten hexafluoride and ammonia, but tungsten nitride carbide as a new material required a new process chemistry. In addition to material properties, the process integration for the copper metallization was studied making compatibility experiments on different surface materials. Based on these studies, titanium nitride and tungsten nitride processes were found to be incompatible with copper metal. However, tungsten nitride carbide film was compatible with copper and exhibited the most promising properties to be integrated for the copper metallization scheme. The process scale-up on 300 mm wafer comprised extensive film uniformity studies, which improved understanding of non-uniformity sources of the ALD growth and the process-specific requirements for the ALD reactor design. Based on these studies, it was discovered that the TiN process from titanium tetrachloride and ammonia required the reactor design of perpendicular flow for successful scale-up. The copper metallization scheme also includes process steps of the copper oxide reduction prior to the barrier deposition and the copper seed deposition prior to the copper metal deposition. Easy and simple copper oxide reduction process was developed, where the substrate was exposed gaseous reducing agent under vacuum and at elevated temperature. Because the reduction was observed efficient enough to reduce thick copper oxide film, the process was considered also as an alternative method to make the copper seed film via copper oxide reduction.

Metal-insulator-semiconductor capacitors with bismuth oxide as insulator

Metal-insulator-semiconductor capacitors using aluminum Bi2O3 and silicon have been studied for varactor applications. Reactively sputtered Bi2O3 films which under suitable proportions of oxygen and argon and had high resistivity suitable for device applications showed a dielectric constant of 25. Journal of Applied Physics is copyrighted by The American Institute of Physics.

Mononitrosalted and phenylamido substituted chelate linkage isomers of quadridentate Schiff base copper(II) complexes

The nitrosation of monophenylamido substututed quadridentate Schiff base complexes of copper(II) are observed to adopt N-bonded isonitroso coordination whereas the phenylisocyanation of the corresponding mononitrosated quadridentate complexes are found to prefer O-bonded isonitroso coordination.

Intergrowth tungsten bronzes of bismuth

High resolution electron microscopic studies show that bismuth forms intergrowth tungsten bronzes containing varying widths of the WO3 slab and one-tunnel wide HTB strips.

Excellent field emission from semialigned carbon nanofibers grown on cylindrical copper surface

We report the field emission from carbon nanofibers (CNFs) grown directly on cylindrical copper by a simple pyrolysis technique. The turn-on field is 0.17 V/µm and the emission current density is 0.9 mA/cm2 at 0.35 V/µm. The emission current is stable at a field of 0.35 V/µm and 6.5×10−6 Torr. The excellent field emission behavior is attributed to the sp2 phase in CNFs and the stable emission is due to the direct growth. The direct growth on cylindrical cathode is advantageous for field emission. ©2009 American Institute of Physics.

A Convenient Route for the Synthesis of Complex Metal Oxides Employing Solid-Solution Precursors

Synthesis of complex metal oxides by the thermal decomposition of solid-solution precursors (formed by isomorphous compounds of component metals) has been investigated since the method enables mixing of cations on an atomic scale and drastically reduces diffusion distances to a few angstroms. Several interesting oxides such as Ca2Fe03,5C, aCoz04,C a2C0205a, nd Ca,FeCo05 have been prepared by this technique starting from carbonate solid solutions of the type Ca,-,Fe,C03, Cal-,Co,C03, and Ca,-,,M,M'yC03 (M, M' = Mn, Fe, Co). The method has been extended to oxalate solid-solution precursors, and the possibility of making use of other kinds of precursor solid solutions is indicated.

Molecular orbital studies on some 4-substituted pyridine N-oxides and 4-nitroquinoline N-oxide

The electronic structures of a series of 4-substituted pyridine N-oxides and 4-nitroquinoline N-oxide are investigated using the simple Pariser-Parr-Pople (PPP), a modified PPP, IEH and MINDO/2 methods. The electronic absorption band maxima and dipole moments are calculated and compared with experimental values. The photoelectron spectra of these compounds are assigned. The nature of the N-oxide group is characterized using the orbital population distributions. The antifungal activity exhibited by some of these compounds is discussed in terms of the nucleophilic frontier electron densities, superdelocalizabilities and electron acceptor properties. The effect of the electron releasing as well as the electron withdrawing substituents on the physico-chemical properties is explained.

ESR study of copper diethyldithiophosphate

ESR investigations are reported in single crystals of copper diethyldithiophosphate, magnetically diluted with the corresponding diamagnetic nickel complex. The spectrum at normal gain shows hyperfine components from 63Cu, 65Cu, and 31P nuclei. At much higher gain, hyperfine interaction from 33S nuclei in the ligand is detected. The spin Hamiltonian parameters relating to copper show tetragonal symmetry. The measured parameters are g = 2.085, g =2.025, A63Cu = 149.6 × 10−4 cm−1, A65Cu = 160.8 × 10−4 cm−1, BCu = 32.5 × 10−4 cm−1 and QCu 5.5 × 10−4cm−1. The 31P interaction is isotropic with a coupling constant AP = 9.6 × 10−4 cm−1. Angular variation of the 33S lines shows two different hyperfine tensors indicating the presence of two chemically inequivalent Cu S bonds. The experimentally determined hyperfine constants are A =34.9×10−4 cm−1, B =26.1×10−4 cm−1, A =60.4×10−4 cm−1, B =55.5×10−4 cm−1. The hyperfine parameters show that the hybridization of the ligand orbitals is very sensitive to the symmetry around the ligand. The g values and Cu hyperfine parameters are not much affected by the distortions occurring in the ligand. The energies of the d-d transitions are determined by optical absorption measurements on Cu diethyldithiophosphate in solution. Using the spin Hamiltonian parameters together with optical absorption results, the MO parameters for the complex are calculated. It is found that in addition to the bond, the bonds are also strongly covalent. ©1973 The American Institute of Physics