Effects of plastic coating on K-alpha yield from ultra-short pulse

A study of the K-alpha radiation emitted from Ti foils irradiated with intense, similar to0.2 J, 67 fs, 800 nm laser pulses, scanning a range of intensities (similar to10(15)-10(18) W cm(-2)), is reported. The brightness of single-shot K-alpha line emission from the front of the targets is recorded. The yield from bare titanium (Ti) is compared to that from plastic (parylene-E) coated Ti. It is demonstrated that, for a defocused beam, a thin layer of plastic increases the yield.

Atomic and molecular ions in intense ultra-fast laser fields

The interaction of a 60 fs 790 nm laser pulse with beams of Ar+, C+, H2+, HD+ and D2+ are discussed. Intensities up to 10^16 Wcm-2 are employed. An experimental z-scanning technique is used to resolve the intensity dependent processes in the confocal volume.

Ultra-thin tunable microwave absorber using liquid crystals

A dynamically adaptive radar absorber is described which is based on a periodic array of microstrip patches that are printed on a 500 mu m-thick liquid crystal substrate. The measured reflectivity of the structure is less than -38 dB with a 200 MHz -10 dB bandwidth at 10.19 GHz when a +4 DC bias is applied. It is shown that a 34 dB reduction in signal loss occurs when the bias voltage is increased to 20 V.

Design and optimization of FinFETs for ultra-low-voltage analog applications

In this paper, we analyze the enormous potential of engineering source/drain extension (SDE) regions in FinFETs for ultra-low-voltage (ULV) analog applications. SDE region design can simultaneously improve two key analog figures of merit (FOM)-intrinsic de gain (A(vo)) and cutoff frequency (f(T)) for 60 and 30 nm FinFETs operated at low drive current (J(ds) = 5 mu A/mu m). The improved Avo and fT are nearly twice compared to those of devices with abrupt SDE regions. The influence of the SDE region profile and its impact on analog FOM is extensively analyzed. Results show that SDE region optimization provides an additional degree of freedom apart from device parameters (fin width and aspect ratio) to design future nanoscale analog devices. The results are analyzed in terms of spacer-to-straggle ratio a new design parameter for SDE engineered devices. This paper provides new opportunities for realizing future ULV/low-power analog design with FinFETs.