Y2O3 stabilized ZrO2 thin films deposited by electron-beam evaporation: Optical properties, structure and residual stresses

This paper describes the preparation and the characterization Of Y2O3 stabilized ZrO2 thin films produced by electric-beam evaporation method. The optical properties, microstructure, surface morphology and the residual stress of the deposited films were investigated by optical spectroscopy, X-ray diffraction (XRD), scanning probe microscope and optical interferometer. It is shown that the optical transmission spectra of all the YSZ thin films are similar with those of ZrO2 thin film, possessing high transparency in the visible and near-infrared regions. The refractive index of the samples decreases with increasing of Y2O3 content. The crystalline structure of pure ZrO2 films is a mixture of tetragonal phase and monoclinic phase, however, Y2O3 stabilized ZrO2 thin films only exhibit the cubic phase independently of how much the added Y2O3 content is. The surface morphology spectrum indicates that all thin films present a crystalline columnar texture with columnar grains perpendicular to the substrate and with a predominantly open microporosity. The residual stress of films transforms tensile from compressive with the increasing Of Y2O3 molar content, which corresponds to the evolutions of the structure and packing densities. (C) 2008 Elsevier Ltd. All rights reserved.

Identificação da fase sigma em uma junta soldada pelo processo TIG manual autógeno de um aço hiperduplex SAF 2707HD (UNS S32707) por difração de raios-x.

O aço inoxidável hiperduplex possui alta resistência a corrosão por pite em ambientes contendo cloretos, quando comparado a outros aços inoxidáveis comercialmente conhecidos. Possui boas propriedades mecânicas, com limite de escoamento superior a 700MPa e limite de resistência a tração em torno de 1000MPa. Essas propriedades o tornam muito atrativos para aplicações em ambientes contendo cloretos, e por isso tem tido destaque na indústria de óleo e gás, refinarias, plataformas offshore, etc. A liga hiperduplex é composta por uma estrutura bifásica, contendo proporções aproximadamente iguais de ferrita e austenita. Esse material possui boa soldabilidade, mas por ser termodinamicamente metaestável, em altas temperaturas pode ocorrer a precipitação de fases intermetálicas não desejáveis, o que resulta em perda de propriedades mecânicas e diminuição da resistência a corrosão. A fase sigma tem sido fortemente estudada, pois é comum sua precipitação nos aços inoxidáveis da família duplex durante o procedimento de soldagem se este não for muito bem controlado. A fase sigma precipita preferencialmente na fase ferrítica, devido a maior concentração de Cr e Mo, que são os elementos formadores da fase. A resistência a corrosão é reduzida e as propriedades mecânicas do material são alteradas o tornando frágil devido a presença da fase sigma. É formada entre 600C e 1000C e possui uma estrutura tetragonal complexa. O objetivo do trabalho foi identificar a possível presença da fase sigma na junta soldada do aço inoxidável hiperduplex SAF 2707 HD (UNS S32707) pelo processo TIG autógeno manual através da difração de raios-x. Nessa pesquisa, foram analisadas uma junta soldada do material pelo processo TIG autógeno manual com arco pulsado. Complementando o estudo foram analisadas seis amostras do aço inoxidável superduplex, sendo que cinco amostras sofreram tratamento térmico para a proposital formação da fase sigma. O refinamento do resultado da difração das amostras foi feito utilizando o método de Rietveld no software Topas Academic versão 4.1. O resultado da amostra soldada de hiperduplex apresentou as fases austenita, ferrita e alguns prováveis óxidos. Os resultados das amostras de superduplex tratadas termicamente apresentaram a fase sigma, conforme esperado na pesquisa, e as fases austenita e ferrita.

Direct observation of the structural component of the metal-insulator phase transition and growth habits of epitaxially grown VO2 nanowires.

We have grown epitaxially orientation-controlled monoclinic VO2 nanowires without employing catalysts by a vapor-phase transport process. Electron microscopy results reveal that single crystalline VO2 nanowires having a [100] growth direction grow laterally on the basal c plane and out of the basal r and a planes of sapphire, exhibiting triangular and rectangular cross sections, respectively. In addition, we have directly observed the structural phase transition of single crystalline VO2 nanowires between the monoclinic and tetragonal phases which exhibit insulating and metallic properties, respectively, and clearly analyzed their corresponding relationships using in situ transmission electron microscopy.

Structural, mechanical, thermodynamic, and electronic properties of thorium hydrides from first-principles

We perform first-principles calculations of the structural, electronic, mechanical, and thermodynamic properties of thorium hydrides (ThH2 and Th4H15) based on the density functional theory with generalized gradient approximation. The equilibrium geometries, the total and partial densities of states, charge density, elastic constants, elastic moduli, Poisson's ratio, and phonon dispersion curves for these materials are systematically investigated and analyzed in comparison with experiments and previous calculations. These results show that our calculated equilibrium structural parameters are well consistent with experiments. The Th-H bonds in all thorium hydrides exhibit weak covalent character, but the ionic properties for ThH2 and Th4H15 are different due to their different hydrogen concentration. It is found that while in ThH2 about 1.5 electrons transfer from each Th atom to H, in Th4H15 the charge transfer from each Th atom is around 2.1 electrons. Our calculated phonon spectrum for the stable body-centered tetragonal phase of ThH2 accords well with experiments. In addition we show that ThH2 in the fluorite phase is mechanically and dynamically unstable.

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Depth dependent elastic strain in ZnO epilayer: combined Rutherford backscattering/channeling and X-ray diffraction

A ZnO layer was grown by metalorganic chemical vapor deposition (MOCVD) on a sapphire (0 0 0 1) substrate. The perpendicular and parallel elastic strain of the ZnO epilayer, e(perpendicular to) = 0.19%, e(parallel to) = -0.29%, respectively, were derived by using the combination of Rutherford backscattering (RBS)/channeling and X-ray diffraction (XRD). The ratio vertical bar e(parallel to)/ e(perpendicular to)vertical bar = 1.5 indicates that ZnO layer is much stiffer in the a-axis direction than in the c-axis direction. By using RBS/C, the depth dependent elastic strain was deduced. The strain is higher at the depth close to the interface and decreases towards the surface. The negative tetragonal distortion was explained by considering the lattice mismatch and thermal mismatch in ZnO thin film. (c) 2004 Elsevier B.V. All rights reserved.

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

The depth distribution of the strain-related tetragonal distortion e(T) in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of e(T) of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN <0001> axis shows a tilt difference about 0.01degrees between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of e(T) nor the decoupling phenomenon is found. The 0.01degrees decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of e(T) should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness. (C) 2004 American Institute of Physics.

THE MODULATION PRINCIPLE OF VACUUM ON THE SUPERCONDUCTIVITY OF YBCO

By neutron diffraction and other experiments, we have found that oxygen ions in YBCO can diffuse out of the sample in vacuo at room and low temperature, while the T(c) decreases greatly. We have also found that if the vacuum-deoxidation process lasts for several days there will be a damping oscillation of T(c) with time (t), and higher vacuum corresponds to a greater amplitude and a shorter period. We tentatively think that T(c) should satisfy the following function: T(c0) is-proportional-to T(c)e(-betat)cos (omegat + phi); it may be due to the diffusion of oxygen and the saturation of the valence state.

X-ray-diffraction study of quasipseudomorphic ErSi1.7 layers formed by channeled ion-beam synthesis

ErSi1.7 layers with high crystalline quality (chi(min) of Er is 1.5%) have been formed by 90 keV Er ion implantation to a dose of 1.6X10(17)/cm(2) at 450 degrees C using channeled implantation. The perpendicular and parallel elastic strain e(perpendicular to)=-0.94%+/-0.02% and e(parallel to)=1.24%+/-0.08% of the heteroepitaxial erbium silicide layers have been measured with symmetric and asymmetric x-ray reflections using a double-crystal x-ray diffractometer. The deduced tetragonal distortion e(T(XRD))=e(parallel to)-e(perpendicular to)=2.18%+/-0.10%, which is consistent with the value e(T(RBS))2.14+/-0.17% deduced from the Rutherford backscattering and channeling measurements. The quasipseudomorphic growth of the epilayer and the stiffness along a and c axes of the epilayer deduced from the x-ray diffraction are discussed.

Surface transformation and inversion domain boundaries in gallium nitride nanorods

Phase transformation and subdomain structure in [0001]-oriented gallium nitride (GaN) nanorods of different sizes are studied using molecular dynamics simulations. The analysis concerns the structure of GaN nanorods at 300 K without external loading. Calculations show that a transformation from wurtzite to a tetragonal structure occurs along {0110} lateral surfaces, leading to the formation of a six-sided columnar inversion domain boundary (IDB) in the [0001] direction of the nanorods. This structural configuration is similar to the IDB structure observed experimentally in GaN epitaxial layers. The transformation is significantly dependent on the size of the nanorods.

Effects of zirconia phase on the synthesis of higher alcohols over zirconia and modified zirconia

The catalytic performances of ZrO2-based catalysts were evaluated for the synthesis of higher alcohols from synthesis gas. The crystal phase structures were characterized by X-ray diffraction (XRD) and UV Raman. The results indicated that ZrO2 and Pd modified ZrO2 catalysts were effective catalysts in the synthesis of ethanol or isobutanol, and their selectivities basically depended on the crystal phase of ZrO2 surface. The ZrO2 with surface tetragonal crystal phase exhibited a high activity to form ethanol, while the ZrO2 with surface monoclinic crystal phase exhibited a high activity to form isobutanol. Temperature-programmed desorption (TPD) experiment indicated that the high activity of isobutanol formation from synthesis gas over monoclinic zirconia was due probably to the strong Lewis acidity of Zr4+ cations and the strong Lewis basicity of O2- anions of coordinative unsaturated Zr4+-O2- pairs on the surface of monoclinic ZrO2. (C) 2003 Elsevier B.V. All rights reserved.

Synthesis and surface characteristics of zirconia and modified zirconia: Performance of CO hydrogenation

ZrO2-A and ZrO2-B catalysts were prepared by two different coprecipitation methods and their performance of CO hydrogenation was studied. The results indicated that ZrO2 and Li-, Pd- and Mn-modified ZrO2 catalysts exhibited good selectivity and high STY to higher alcohols. The surface characteristics of ZrO2-A and ZrO2-B samples were investigated by means of BET, NH3-TPD, XRD and UV Raman technique. The tetragonal zirconia on the surface region of ZrO2-A and Li-Pd-Mn/ZrO2-A catalysts may be responsible for the high selectivity towards ethanol, while the monoclinic zirconia on the surface of ZrO2-B and Li-Pd-Mn/ZrO2-B catalysts may be crucial to the high isobutanol selectivity.

Phase transformation in the surface region of zirconia and doped zirconia detected by UV Raman spectroscopy

The phase evolution of yttrium oxide and lanthanum oxide doped zirconia (Y2O3-ZrO2 and La2O3-ZrO2, respectively) from their tetragonal to monoclinic phase has been studied using UV Raman spectroscopy, visible Raman spectroscopy and XRD. UV Raman spectroscopy is found to be more sensitive at the surface region while visible Raman spectroscopy and XRD mainly give the bulk information. For Y2O3-ZrO2 and La2O3-ZrO2, the transformation of the bulk phase from the tetragonal to the monoclinic is significantly retarded by the presence of yttrium oxide and lanthanum oxide. However, the tetragonal phase in the surface region is difficult to stabilize, particularly when the stabilizer's content is low. The phase in the surface region can be more effectively stabilized by lanthanum oxide than yttrium oxide even though zirconia seemed to provide more enrichment in the surface region of the La2O3-ZrO2 sample than the Y2O3-ZrO2 sample, based on XPS analysis. The surface structural tension and the enrichment of the ZrO2, component in the surface region of ZrO2-Y2O3 and ZrO2-La2O3 might be the reasons for the striking difference between the phase change in the surface region and the bulk. Accordingly, the stabilized tetragonal surface region can significantly prevent the phase transition from developing into the bulk when the stabilizer's content is high.

Structural, electronic and mechanical properties of ReN2 from first principles

First principles calculations were performed to study the structural, electronic and mechanical properties of hypothetical rhenium dinitride ReN2 for various space groups. It was found that cubic Fm-3m and Pa-3, tetragonal P4(2)/mnm, and orthorhombic Pmmn structures are mechanically stable and metallic. P4(2)/mnm structure is thermodynamically stable at ambient conditions and up to 76 GPa. It has the shortest Re-N bond (1.964 angstrom).

A Unique Mn2Gd2 Tetranuclear Compound of p-tert-Butylthiacalix[4]arene

A calixarene complex with tetragonal (Mn2Gd2III)-Gd-II tetranuclear units was synthesized in solvothermal conditions, where the addition of a small amount of water was crucial for the formation of the target compound. In the structure, two tail-to-tail p-tert-butylthiacalixarenes are located in a C-shaped mode with a dihedral angle of 14.29 degrees but not in the conventional antiparallel arrangement and form a sandwich-like subunit with an in-between Mn2Gd2 unit. Both calixarenes assume similar cone shapes of C-2v symmetry but are pinched to different extents.