Liulin silicon semiconductor spectrometers as cosmic ray monitors at the high mountain observatories Jungfraujoch and Lomnický stit

Currently, most cosmic ray data are obtained by detectors on satellites, aircraft, high-altitude balloons and ground (neutron monitors). In our work, we examined whether Liulin semiconductor spectrometers (simple silicon planar diode detectors with spectrometric properties) located at high mountain observatories could contribute new information to the monitoring of cosmic rays by analyzing data from selected solar events between 2005 and 2013. The decision thresholds and detection limits of these detectors placed at Jungfraujoch (Switzerland; 3475 m a.s.l.; vertical cut-off rigidity 4.5 GV) and Lomnicky stıt (Slovakia; 2633 m a.s.l.; vertical cut-off rigidity 3.84 GV) highmountain observatories were determined. The data showed that only the strongest variations of the cosmic ray flux in this period were detectable. The main limitation in the performance of these detectors is their small sensitive volume and low sensitivity of the PIN photodiode to neutrons.

Study of rapid ionisation for simulation of soft X-ray lasers with the 2D hydro-radiative code ARWEN

We present our fast ionisation routine used to study transient softX-raylasers with ARWEN, a two-dimensional hydrodynamic code incorporating adaptative mesh refinement (AMR) and radiative transport. We compute global rates between ion stages assuming an effective temperature between singly-excited levels of each ion. A two-step method is used to obtain in a straightforward manner the variation of ion populations over long hydrodynamic time steps. We compare our model with existing theoretical results both stationary and transient, finding that the discrepancies are moderate except for large densities. We simulate an existing Molybdenum Ni-like transient softX-raylaser with ARWEN. Use of the fast ionisation routine leads to a larger increase in temperature and a larger gain zone than when LTE datatables are used.

Laser Shock Microformingof Thin Metal Sheets with ns Lasers

Continuous and long-pulse lasers have been used for the forming of metal sheets in macroscopic mechanical applications. However, for the manufacturing of micro-electromechanical systems (MEMS), the use of ns laser pulses provides a suitable parameter matching over an important range of sheet components that, preserving the short interaction time scale required for the predominantly mechanical (shock) induction of deformation residual stresses, allows for the successful processing of components in a medium range of miniaturization without appreciable thermal deformation.. In the present paper, the physics of laser shock microforming and the influence of the different experimental parameters on the net bending angle are presented.

Comparison of natural and forced amplification regimes in plasma-based soft-x-ray lasers seeded by high-order harmonic

The amplification of high-order harmonics (HOH) in a plasma-based amplifier is a multiscale, temporal phenomenon that couples plasma hydrodynamics, atomic processes, and HOH electromagnetic fields. We use a one-dimensional, time-dependent Maxwell-Bloch code to compare the natural amplification regime and another regime where plasma polarization is constantly forced by the HOH. In this regime, a 10-MW (i.e., 100 times higher than current seeded soft x-ray laser power), 1.5-μJ, 140-fs pulse free from the parasitic temporal structures appearing on the natural amplification regime can be obtained.

Application of Ultraintense Lasers to validate materials for laser fusion: production of ions and other relevant species

Justification of the need and demand of experimental facilities to test and validate materials for first wall in laser fusion reactors - Characteristics of the laser fusion products - Current ?possible? facilities for tests Ultraintense Lasers as ?complete? solution facility - Generation of ion pulses - Generation of X-ray pulses - Generation of other relevant particles (electrons, neutrons..)

Selective ablation with UV lasers of a-Si:H thin film solar cells in direct scribing configuration

Monolithical series connection of silicon thin-film solar cells modules performed by laser scribing plays a very important role in the entire production of these devices. In the current laser process interconnection the two last steps are developed for a configuration of modules where the glass is essential as transparent substrate. In addition, the change of wavelength in the employed laser sources is sometimes enforced due to the nature of the different materials of the multilayer structure which make up the device. The aim of this work is to characterize the laser patterning involved in the monolithic interconnection process in a different configurations of processing than the usually performed with visible laser sources. To carry out this study, we use nanosecond and picosecond laser sources working at 355nm of wavelength in order to achieve the selective ablation of the material from the film side. To assess this selective removal of material has been used EDX (energy dispersive using X-ray) analysis

A proposal for multi-tens of GW fully coherent femtosecond soft X-ray lasers

X-ray free-electron lasers1,2 delivering up to 131013 coherent photons in femtosecond pulses are bringing about a revolution in X-ray science3?5. However, some plasma-based soft X-ray lasers6 are attractive because they spontaneously emit an even higher number of photons (131015), but these are emitted in incoherent and long (hundreds of picoseconds) pulses7 as a consequence of the amplification of stochastic incoherent self-emission. Previous experimental attempts to seed such amplifiers with coherent femtosecond soft X-rays resulted in as yet unexplained weak amplification of the seed and strong amplification of incoherent spontaneous emission8. Using a time-dependent Maxwell?Bloch model describing the amplification of both coherent and incoherent soft X-rays in plasma, we explain the observed inefficiency and propose a new amplification scheme based on the seeding of stretched high harmonics using a transposition of chirped pulse amplification to soft X-rays. This scheme is able to deliver 531014 fully coherent soft X-ray photons in 200 fs pulses and with a peak power of 20 GW.

Critical Role of Two-Dimensional Island-Mediated Growth on the Formation of Semiconductor Heterointerfaces

We experimentally demonstrate a sigmoidal variation of the composition profile across semiconductor heterointerfaces. The wide range of material systems (III-arsenides, III-antimonides, III-V quaternary compounds, III-nitrides) exhibiting such a profile suggests a universal behavior. We show that sigmoidal profiles emerge from a simple model of cooperative growth mediated by twodimensional island formation, wherein cooperative effects are described by a specific functional dependence of the sticking coefficient on the surface coverage. Experimental results confirm that, except in the very early stages, island growth prevails over nucleation as the mechanism governing the interface development and ultimately determines the sigmoidal shape of the chemical profile in these two-dimensional grown layers. In agreement with our experimental findings, the model also predicts a minimum value of the interfacial width, with the minimum attainable value depending on the chemical identity of the species.

Ultraintense lasers applied to laser fusion material testing: production of ions, X rays and neutrons

Due to the particular characteristics of the fusion products, i.e. very short pulses (less than a few μs long for ions when arriving to the walls; less than 1 ns long for X-rays), very high fluences ( 10 13 particles/cm 2 for both ions and X rays photons) and broad particle energy spectra (up to 10 MeV ions and 100 keV photons), the laser fusion community lacks of facilities to accurately test plasma facing materials under those conditions. In the present work, the ability of ultraintese lasers to create short pulses of energetic particles and high fluences is addressed as a solution to reproduce those ion and X-ray bursts. Based on those parameters, a comparison between fusion ion and laser driven ion beams is presented and discussed, describing a possible experimental set-up to generate with lasers the appropriate ion pulses. At the same time, the possibility of generating X-ray or neutron beams which simulate those of laser fusion environments is also indicated and assessed under current laser intensities. It is concluded that ultraintense lasers should play a relevant role in the validation of materials for laser fusion facilities.

Ultraintense Lasers Applied to Laser Fusion Material Testing: Production of Ions, X rays and Neutrons

The ability of ultraintese lasers to create short pulses of energetic particles and high fluences is addressed as a solution to reproduce ion and X-ray ICF bursts for the characterization and validation of plasma facing components. The possibility of using a laser neutron source for material testing will also be discussed.

Application of high-intensity short-pulse lasers to the mechanical and surface properties improvement of high reliability metallic components by shock processing

Outline: • Introduction • Process Experimental Setup • Experimental Procedure • Experimental Results for Al2024-T351 and Ti6Al4V - Residual stresses - Tensile Strength - Fatigue Life • Discussion and Outlook - Prospects for technological applications of LSP

Interaction between a laser beam and semiconductor nanowires: application to the raman spectrum of Si nanowires

One presents in this work the study of the interaction between a focused laser beam and Si nanowires (NWs). The NWs heating induced by the laser beam is studied by solving the heat transfer equation by finite element methods (fem). This analysis permits to establish the temperature distribution inside the NW when it is excited by the laser beam. The overheating is dependent on the dimensions of the NW, both the diameter and the length. When performing optical characterization of the NWs using focused laser beams, one has to consider the temperature increase introduced by the laser beam. An important issue concerns the fact that the NWs diameter has subwavelength dimensions, and is also smaller than the focused laser beam. The analysis of the thermal behaviour of the NWs under the excitation with the laser beam permits the interpretation of the Raman spectra of Si NWs, where it is demonstrated that temperature induced by the laser beam play a major role in shaping the Raman spectrum of Si NWs

Two-wavelength switching with a distributed-feed back semiconductor optical amplifier (DFBSOA)

Switching of a signal beam by another control beam at different wavelength is demonstrated experimentally using the optical bistability occurring in a 1.55 mm-distributed feedback semiconductor optical amplifier (DFBSOA) working in reflection. Counterclockwise (S-shaped) and reverse (clockwise) bistability are observed in the output of the control and the signal beam respectively, as the power of the input control signal is increased. With this technique an optical signal can be set in either of the optical input wavelengths by appropriate choice of the powers of the input signals. The switching properties of the DFBSOA are studied experimentally as the applied bias current is increased from below to above threshold and for different levels of optical power in the signal beam and different wavelength detunings between both input signals. Higher on-off extinction ratios, wider bistable loops and lower input power requirements for switching are obtained when the DFBSOA is operated slightly above its threshold value.

Modeling Reflective Bistability in Vertical-Cavity Semiconductor Optical Amplifiers

The characteristics of optical bistability in a vertical- cavity semiconductor optical amplifier (VCSOA) operated in reflection are reported. The dependences of the optical bistability in VCSOAs on the initial phase detuning and on the applied bias current are analyzed. The optical bistability is also studied for different numbers of superimposed periods in the top distributed bragg reflector (DBR) that conform the internal cavity of the device. The appearance of the X-bistable and the clockwise bistable loops is predicted theoretically in a VCSOA operated in reflection for the first time, to the best of our knowledge. Moreover, it is also predicted that the control of the VCSOA’s top reflectivity by the addition of new superimposed periods in its top DBR reduces by one order of magnitude the input power needed for the assessment of the X- and the clockwise bistable loop, compared to that required in in-plane semiconductor optical amplifiers. These results, added to the ease of fabricating two-dimensional arrays of this kind of device could be useful for the development of new optical logic or optical signal regeneration devices.