Electrical and optical interconnects for high-performance computing

Technology scaling has enabled drastic growth in the computational and storage capacity of integrated circuits (ICs). This constant growth drives an increasing demand for high-bandwidth communication between and within ICs. In this dissertation we focus on low-power solutions that address this demand. We divide communication links into three subcategories depending on the communication distance. Each category has a different set of challenges and requirements and is affected by CMOS technology scaling in a different manner. We start with short-range chip-to-chip links for board-level communication. Next we will discuss board-to-board links, which demand a longer communication range. Finally on-chip links with communication ranges of a few millimeters are discussed.

Electrical signaling is a natural choice for chip-to-chip communication due to efficient integration and low cost. IO data rates have increased to the point where electrical signaling is now limited by the channel bandwidth. In order to achieve multi-Gb/s data rates, complex designs that equalize the channel are necessary. In addition, a high level of parallelism is central to sustaining bandwidth growth. Decision feedback equalization (DFE) is one of the most commonly employed techniques to overcome the limited bandwidth problem of the electrical channels. A linear and low-power summer is the central block of a DFE. Conventional approaches employ current-mode techniques to implement the summer, which require high power consumption. In order to achieve low-power operation we propose performing the summation in the charge domain. This approach enables a low-power and compact realization of the DFE as well as crosstalk cancellation. A prototype receiver was fabricated in 45nm SOI CMOS to validate the functionality of the proposed technique and was tested over channels with different levels of loss and coupling. Measurement results show that the receiver can equalize channels with maximum 21dB loss while consuming about 7.5mW from a 1.2V supply. We also introduce a compact, low-power transmitter employing passive equalization. The efficacy of the proposed technique is demonstrated through implementation of a prototype in 65nm CMOS. The design achieves up to 20Gb/s data rate while consuming less than 10mW.

An alternative to electrical signaling is to employ optical signaling for chip-to-chip interconnections, which offers low channel loss and cross-talk while providing high communication bandwidth. In this work we demonstrate the possibility of building compact and low-power optical receivers. A novel RC front-end is proposed that combines dynamic offset modulation and double-sampling techniques to eliminate the need for a short time constant at the input of the receiver. Unlike conventional designs, this receiver does not require a high-gain stage that runs at the data rate, making it suitable for low-power implementations. In addition, it allows time-division multiplexing to support very high data rates. A prototype was implemented in 65nm CMOS and achieved up to 24Gb/s with less than 0.4pJ/b power efficiency per channel. As the proposed design mainly employs digital blocks, it benefits greatly from technology scaling in terms of power and area saving.

As the technology scales, the number of transistors on the chip grows. This necessitates a corresponding increase in the bandwidth of the on-chip wires. In this dissertation, we take a close look at wire scaling and investigate its effect on wire performance metrics. We explore a novel on-chip communication link based on a double-sampling architecture and dynamic offset modulation technique that enables low power consumption and high data rates while achieving high bandwidth density in 28nm CMOS technology. The functionality of the link is demonstrated using different length minimum-pitch on-chip wires. Measurement results show that the link achieves up to 20Gb/s of data rate (12.5Gb/s/$\mu$m) with better than 136fJ/b of power efficiency.

超分辨近场功能薄膜的膜层结构及其机理研究进展

超分辨近场结构光盘是最有希望达到100 GB以上的存储容量方式之一,而其记录和读出机理是研究中的重点,在近年文献研究的基础上,阐述了超分辨近场功能薄膜的膜层结构及其机理的研究进展。

网络的发展对光盘应用的影响

一、引言21世纪是数字化和多媒体化的信息时代,随着社会和经济的发展,特别是IT产业的快速发展,全球信息每年以指数方式上升。最近IDC的研究报告指出,2006年,全球的信息量为1610亿GB;到2010年,全球数字信息量预计为9880亿GB。中国的数字信息总量,也将从2006年的127.1亿GB增加到900.5亿GB,占全球信息总量的9.1%。同时,根据国家信息产业部的年度

Avaliação da customização por desgaste de pinos pré-fabricados de fibra de vidro

O objetivo deste estudo foi avaliar pinos pré-fabricados de fibra de vidro (White Post DC/FGM) submetidos à customização por desgaste da porção apical. Experimento 1: 5 pinos n. 4 foram divididos em 5 grupos (G) de acordo com o instrumento de desgaste: GA - sem desgaste, GB- mini torno industrial (Dentsply), GC - ponta diamantada n. 3195F (KG Sorensen), GD - disco de lixa de granulação média (Sof-Lex/3M/ESPE), GE- alicate (Tramontina). Observou-se a micromorfologia dos pinos em microscópio eletrônico de varredura (ZEISS/DSM 960). Experimento 2: 60 pinos de diferentes diâmetros foram divididos em 6 grupos: G0 - pinos n. 0,5, G1 - pinos n. 1, G2 - pinos n. 2, G3 - pinos n. 3, G4 - pinos n.4, G5 - pinos n. 4 com terço apical desgastado com discos de lixa até o equivalente ao terço apical dos pinos n. 2. Os pinos foram submetidos ao teste de flexão de 3 pontos na máquina de ensaios universal (Instron 5500 R), conforme ISO 10477. Experimento 3: 20 caninos humanos permanentes sofreram tratamento endodôntico e remoção das coroas clínicas padronizando 15 mm de remanescente radicular. Os dentes foram incluídos em resina acrílica com simulação do ligamento periodontal, receberam férula de 2 mm e foram divididos em 2 grupos: GI - pinos n. 4 cimentados em condutos preparados com broca equivalente ao pino (FGM), GII - pinos n. 4 customizados no terço apical cimentados em condutos preparados com brocas (FGM) equivalentes aos pinos n. 2 em 10 mm e n. 4 em 5 mm. Os pinos foram cimentados com cimento resinoso (Rely X U100/3M/ESPE), os corpos de prova receberam coroas diretas de resina composta (Enforce Core/Dentsply) padronizadas com coras de policarbonato (TDV) e foram submetidos ao teste de resistência à fratura na Instron a 45da ferramenta cilíndrica, com força de 500 N aplicada a 2 mm da incisal na face palatina/lingual, com velocidade de 0,5 mm/min até falha. O padrão de fratura foi classificado em favorável ou desfavorável. Os resultados foram tratados estatisticamente por teste de análise de variância (ANOVA, p<0,05). Os resultados dos testes de flexão e fratura foram respectivamente: G0 - 58,406,40; G1 - 83,959,43; G2- 103,4219,17; G3 - 160,7817,30; G4 - 170,4711,28; G5 - 106,3521,96; GI - 303,0262,21 e GII - 402,81131,97. O padrão de fratura foi tratado por Mann-Whitney que observou semelhança estatística entre os grupos. Concluiu-se que o desgaste de pinos de fibra de vidro com pontas diamantadas ou discos de lixa produz alterações micromorfológicas aceitáveis. O corte com alicate deve ser evitado. A customização por desgaste da porção apical de pinos de fibra de vidro diminui a resistência à flexão a valores aceitáveis. Dentes restaurados com pinos de fibra de vidro customizados por desgaste possuem resistência à fratura superior a dentes restaurados com pinos intactos. A customização por desgaste facilita a adaptação do pino ao conduto radicular e preserva a estrutura dental.

Comparative investigation of up-conversion luminescence in Tm3+/Yb3+-codoped germanate-niobic and germanium-bismuth glasses: effect of phonon density on up-conversion emission

Tm3+/Yb3+-codoped gernianate-niobic (GN) and germanium-bismuth (GB) glasses have been synthesized by conventional ruching and quenching method. Intense blue and weak red emissions centered at 477 and 650 nm, corresponding to the transitions (1)G(4)->H-3(6) and (1)G(4)->H-3(4), respectively, were observed at room temperature. The possible Up-conversion mechanisms are discussed and estimated. GN glass showed a weaker up-conversion emission than GB glass, which is inconsistent with the prediction from the difference of maximum phonon energy between GN and GB glasses. In this paper, Raman spectroscopy was employed to investigate the origin of the difference in up-conversion luminescence in the two glasses. Compared with phonon side-band spectroscopy, Raman spectroscopy extracts more information including both phonon energy and phonon density. For the first time, our results reveal that, besides the maximum phonon energy, the phonon density of host glasses is also an important factor in determining the up-conversion efficiency. (c) 2005 Elsevier Ltd. All rights reserved.

Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3)

YAlO3 (YAP) crystals with different Yb3+ concentration have been grown by Czochralski method and cooperative fluorescence of Yb3+ ions in YAP crystal was studied under 940-nm infrared (IR) LD excitation at room temperature. The Yb concentration dependence of absorption intensity of IR and charge transfer bands exhibit different features. The green emission band in the region of 480-520nm was assigned to the cooperative deexcitation of two Yb3+ ions. The remaining upconverted emission bands containing various sharp peaks associated with impurity ions were observed and discussed. Charge transfer luminescence of heavily doped 20at% Yb:YAP is strongly temperature dependent and no concentration quenching of the charge transfer luminescence was found through the investigation of different Yb levels samples. (c) 2006 Elsevier B.V. All rights reserved.