909 resultados para Relacionamento entre TI e negócio


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A brief summary of TI C28X MCU is presented in this paper. The key points of power management design for all C28X MCU based on different requirements on power management are proposed. Two different solutions of power management design with specific examples can help C28X MCU developers with technical advice and have positive impact on application of C28X MCU in the field of industrial control.中文摘要:本文对 TI C28X 系列 MCU 作了简要归纳和介绍 针对各款 MCU 对电源管理的不同要求,提出了全系列 MCU 的电源管理部分设计要点,总结了两类不同的电源管理设计方案,对每类方案均给出了具体的设计案例 为 C28X 系列 MCU 的电源管理设计提供了技术指导,对促进 C28X 系列 MCU 在工业控制领域内的应用有积极的意义.

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DSP系统的程序都是保存在非易失性存储器中,系统启动的时候,程序加载到系统的RAM中去执行。本文详细描述了TITMS320C6713DSP板以Flash作为引导存储器,采用二级装载的办法来实现程序的加载,并给出了数据传输的代码片断。文章介绍的这种二级装载的方法也可以应用于C6000系列其他型号的处理器。

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分析了将程序代码写入FLASH的两种方法,并在基于TITMS320C6713的DSP系统设计中,以28F128J3A为例,讨论了用FlashBurn软件和FBTC目标组件程序烧写FLASH的具体实现过程,给出了主要程序代码。

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在中国原子能研究院HI-13串列加速器上用束-箔技术完成了80MeVTi离子和C箔相互作用产生的高电离态离子谱观测,与用激光等离子体技术的实验结果做了比较,大多数谱线与激光等离子体技术的实验结果有较好的符合,有3条谱线是未观测到的.这几条谱线为ⅩⅧ13·406,ⅩⅧ14·987,X17·439nm,属于2s2p24P3/2—2p32D3/2,2s2p21S0—2sp31P1,4p1P0—5d1P1跃迁.

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在加速器上利用束箔光谱方法 ,测量了Ti离子的高电离态光谱

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报道在中国原子能研究院HI-13串列加速器上用束-箔技术研究120MeV的Ti离子和C箔相互作用产生的高电离态离子谱的实验结果.在120-220nm范围,观测到53条激发能级的发射的谱线,其中有11条谱线是新确认的,实验结果与激光等离子体实验和理论结果相符合.

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报道用 15 0keV的高电荷态离子1 2 6 Xeq + (6≤q≤ 30 )轰击Ti固体表面产生 2 0 0— 10 0 0nm波段发射光谱的实验结果 .结果显示 ,用电荷态足够高的离子作光谱激发源 ,无需很强的束流强度 (nA量级 ) ,便可激发起样品表面的原子和离子在可见光波段的特征谱线 .当入射离子剥离度q >qc≈ 2 0时 ,Ti原子及其离子的特征谱线强度突然显著增强 ;不同金属靶 ,特征谱线突然增强的qc值不同 .理论分析表明 ,这与q大于此临界值后 ,单电子转移释放能量激发靶材料传导电子气体的表面等离激元密切相关 .

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Well-aligned TiO2/Ti nanotube arrays were synthesized by anodic oxidation of titanium foil in 0.5 wt.% HF in various anoclization voltages. The images of filed emission scanning electron microscopy indicate that the nanotubes structure parameters, such as diameter, wall thickness and density, can be controlled by adjusting the anoclization voltage. The peaks at 25.3 degrees and 48.0 degrees of X-ray diffraction pattern illuminate that the TiO2 nanotube arrays annealed at 500 degrees C are mainly in anatase phase. The filed emission (FE) properties of the samples were investigated. A turn-on electric field 7.8 V/mu m, a field enhancement factors approximately 870 and a highest FE current density 3.4 mA/cm(2) were obtained. The emission current (2.3 mA/cm(2) at 18.8 V/mu m) was quite stable within 480 min. The results show that the FE properties of TiO2/Ti have much relation to the structure parameters.

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Highly ordered TiO2/Ti nanotube arrays were fabricated by anodic oxidation method in 0.5 wt% HF. Using prepared TiO2/Ti nanotube arrays deposited Ni nanoparticles as substrate, high quality diamond-like carbon nanorods (DLCNRs) were synthesized by a conventional method of chemical vapor deposition at 750 degrees C in nitrogen atmosphere. DLCNRs were analyzed by filed emission scanning electron microscopy and Raman spectrometer. It is very interesting that DLCNRs possess pagoda shape with the length of 3-10 mu m. Raman spectra show two strong peaks about 1332 cm (1) and 1598 cm (1), indicating the formation of diamond-like carbon. The field emission measurements suggest that DLCNRs/TiO2/Ti has excellent field emission properties, a low turn-on field about 3.0 V/mu m, no evident decay at 3.4 mA/cm(2) in 480 min. (C) 2009 Elsevier B. V. All rights reserved.

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Well-aligned TiO2/Ti nanotube arrays were electrochemically formed in a HF solution for different anodization times. Field emission scanning electron microscopy (FE-SEM) images reveal that anodization time had a great influence on the morphology of TiO2/Ti nanotube arrays. The composition of resulting nanotubes was analyzed by X-ray photoelectron spectroscopy (XPS). Field emission properties of the prepared samples with different morphologies were investigated by the Fowler-Nordheim (F-N) theory. The results indicate that the morphology can affect field emission behaviors. TiO2/Ti nanotube arrays with clear, uniform, and short nanotubes display moderate field emission properties, and have the better turn-on field of 4.6 V/mu m and good field emission stability. (C) 2010 Elsevier B.V. All rights reserved.

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本实验工作是在中国原子能科学研究院的HI-13串列加速器国家实验室第二测量厅原子物理实验平台上完成。本工作采用能量为20-50MeV的高电荷态O5+离子去轰击Au, 测量了不同能量下Au的L1、Lα、Lβ、Lγ的X射线谱,计算了不同能量下各条X射线的产生截面,并与ECPSSR理论计算结果进行了比较。实验结果表明σ(Ll)/σ(Lα) 和σ(Lγ)/σ(Lα)与ECPSSR理论计算结果符合比较好,而对于σ(Lβ)/σ(Lα),在较低能区实验值略高于理论值。在中国科学院近代物理研究所320kV高电荷态离子实验研究平台上测量了Xeq+ (q=17-29)入射Al、Ti和Ni等表面诱发的可见光和红外光。通过对靶原子光谱线的研究,实验发现,随着入射离子的电荷态增高,原子和离子的各种光谱线可得到有效地激发。低速高电荷态离子入射金属固体表面,靶原子的特征谱线的激发强度,与入射离子的电荷态q密切相关。qc的实验测量值和理论计算值符合的较好