Development of solidification microstructure in boron-modified alloy Ti-6Al-4V-0.1B

Hypoeutectic boron addition (0.1 wt.%) to Ti-6Al-4V is known to cause significant refinement of the cast microstructure. In the present investigation, it has been observed that trace boron addition to Ti-6Al-4V alloy also ensures excellent microstructural homogeneity throughout the ingot. A subdued thermal gradient, related to the basic grain refinement mechanism by constitutional undercooling, persists during solidification for the boron-containing alloy and maintains equivalent beta grain growth kinetics at different locations in the ingot. The Ti-6Al-4V alloy shows relatively strong texture with preferred components (e.g. ingot axis parallel to[0 0 0 1] or [1 0 (1) over bar 0]) over the entire ingot and gradual transition of texture components along the radius. For Ti-6Al-4V-0.1B alloy, significant weakening characterizes both the high-temperature beta and room-temperature a texture. In addition to solidification factors that are responsible for weak beta texture development, microstructural differences due to boron addition, e.g. the absence of grain boundary alpha phase and presence of TiB particles, strongly affects the mechanism of beta -> alpha phase transformation and consequently weakens the alpha phase texture. Based on the understanding developed for the boron-modified alloy, a novel mechanism has been proposed for the microstructure and texture formation during solidification and phase transformation. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Structural, thermal and electrical characterization of NdLiMo2O8 electroceramics, using impedance spectroscopy

We report electrical property of a polycrystalline NdLiMo2O8 ceramics using complex impedance analysis. The material shows temperature dependent electrical relaxation phenomena. The d.c. conductivity shows typical Arrhenius behavior, when observed as a function of temperature. The a.c. conductivity is found to obey Jonscher's universal power law. The material was prepared in powder form by a standard solid-state reaction technique. Material formation and crystallinity have been confirmed by X-ray diffraction studies. Impedance measurements have been performed over a range of temperatures and frequencies. The results have been analyzed in the complex plane formalism and suitable equivalent circuits have been proposed in different regions. The role of bulk and grain boundary effect in the overall electrical conduction process is discussed with proper justification. (C) 2011 Elsevier Ltd. All rights reserved.

Structural, dielectric relaxation and piezoelectric characterization of Sr2+ substituted modified PMS-PZT ceramic

Pyrochlore phase free [Pb0.94Sr0.06] [(Mn1/3Sb2/3)(0.05)(Zr0.53Ti0.47)(0.95)] O-3 ceramics has been synthesized with pure Perovskite phase by semi-wet route using the columbite precursor method. The field dependences of the dielectric response and the conductivity have been measured in a frequency range from 50 Hz to 1 MHz and in a temperature range from 303 K to 773 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency has been performed, assuming a distribution of relaxation times. The scaling behavior of the dielectric loss spectra suggests that the distribution of the relaxation times is temperature independent. The SEM photographs of the sintered specimens present the homogenous structures and well-grown grains with a sharp grain boundary. The material exhibits tetragonal structure. When measured at frequency (100 Hz), the polarization shows a strong field dependence. Different piezoelectric figures of merit (k(p), d(33) and Q(m)) of the material have also been measured obtaining their values as 0.53, 271 pC/N and 1115, respectively, which are even higher than those of pure PZT with morphotropic phase boundary (MPB) composition. Thus the present ceramics have the optimal overall performance and are promising candidates for the various high power piezoelectric applications. (C) 2011 Elsevier B.V. All rights reserved.

Influence of minor addition of boron on tensile and fatigue properties of wrought Ti-6Al-4V alloy

Addition of boron to cast Ti-6Al-4V alloy leads to significant refinement in grain size, which in turn improves processibilty as well as the mechanical properties of the as-cast alloy. Room temperature tensile and fatigue properties of Wrought Ti-6Al-4V-B alloys with B up to 0.09 wt.% are investigated. Thermo-mechanical processing at 950 degrees C caused kinking of alpha lamellae and alignment of TiB particles in the flow direction with a negligible change in prior beta grain and colony sizes, indicating the absence of dynamic recrystallisation during forging. Characterisation with the aid of X-ray and electron back scattered diffraction reveal a strong basal texture in B free alloy which gets randomised with the 0.09B addition in the forged condition. Marginal enhancement in tensile and fatigue properties upon forging is noted. B free wrought Ti-6Al-4V alloy exhibits better tensile strength as compared to B containing alloy, due to the operation of < c+a > slip on pyramidal planes with high value of CRSS as compared to < a > slip on basal and prismatic planes. Decrease in fatigue strength of Ti-6Al-4V-0.04B in as-cast and the wrought state is observed due to increase in the volume fraction of grain boundary a phase with B addition, which acts as a crack nucleation site. No significant effect of TiB particles on tensile and fatigue properties is observed. (C) 2012 Elsevier B.V. All rights reserved.

Microstructure and texture evolution during beta extrusion of boron modified Ti-6A1-4V alloy

Boron addition to conventional titanium alloys below the eutectic limit refines the cast microstructure and improves mechanical properties. The present work explores the influence of hypoeutectic boron addition on the microstructure and texture evolution in Ti-6Al-4V alloy under beta extrusion. The beta extruded microstructure of Ti-6Al-4V is characterized by shear bands parallel to the extrusion direction. In contrast, the extruded Ti-6Al-4V-0.1B alloy shows a regular beta worked microstructure consisting of fine prior beta grains and acicular alpha-lamellae with no signs of the microstructural instability. Crystallographic texture after extrusion was almost identical for the two alloys indicating the similarity in their transformation behavior, which is attributed to complete dynamic recrystallization during beta processing. Microstructural features as well as crystallographic texture indicate dominant grain boundary related deformation processes for the boron modified alloy that leads to homogeneous deformation without instability formation. The absence of shear bands has significant technological importance as far as the secondary processing of boron added alloys in (alpha + beta)-phase field are concerned. (C) 2012 Elsevier B.V. All rights reserved.

Diffusion and growth mechanism of phases in the Pd-Sn system

Growth mechanism of phases and atomic mechanism of diffusion are discussed in the Pd-Sn system. The Kirkendall marker plane location indicates that the PdSn4 phase grows because of diffusion of Sn. Atomic arrangement in the crystal indicates that Sn can diffuse through its own sublattice but Pd cannot diffuse unless antisites are present. The negligible diffusion of Pd indicates the absence of Pd antisites. The activation energy value indicates that the contribution from grain boundary diffusion cannot be neglected although experiments were conducted in the homologous temperature range of 0.7-0.79.

Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

Understanding and controlling growth stress is a requisite for integrating oxides with Si. Yttria stabilized zirconia (YSZ) is both an important functional oxide and a buffer layer material needed for integrating other functional oxides. Stress evolution during the growth of (100) and (111) oriented YSZ on Si (100) by radio frequency and reactive direct current sputtering has been investigated with an in-situ monitor and correlated with texture evolution. Films nucleated at rates <5 nm/min are found to be (111) oriented and grow predominantly under a compressive steady state stress. Films nucleated at rates >20 nm/min are found to be (100) oriented and grow under tension. A change in growth rate following the nucleation stage does not change the orientation. The value of the final steady state stress varies from -4.7 GPa to 0.3 GPa. The in-situ studies show that the steady state stress generation is a dynamic phenomenon occurring at the growth surface and not decided at film nucleation. The combination of stress evolution and texture evolution data shows that the adatom injection into the grain boundaries is the predominant source of compressive stress and grain boundary formation at the growth surface is the source of tensile stress. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757924]

Threshold voltage model for accumulation mode polycrystalline SOI MOSFETs and comparisons with experimental results

In this paper, a simple but accurate semi analytical charge sheet model is presented for threshold voltage of accumulation mode polycrystalline silicon on insulator (PSOI) MOSFETs. In this model, we define the threshold voltage (V-T) of the polysilicon accumulation mode MOSFET as the gate voltage required to raise the surface potential (phi(s)) to a value phi(sT) necessary to overcome the charge trapping in the grain boundary and to create channel accumulation charge that is equal to the channel accumulation charge available in the case of single crystal silicon accumulation mode MOSFET at that phi(sT). The correctness of the model is demonstrated by comparing the theoretically estimated values of threshold voltage with the experimentally measured threshold voltages on the accumulation mode PSOI MOSFETs fabricated in the laboratory using LPCVD polysilicon layers doped with boron to achieve dopant densities in the range 3.3 x 10(-15)-5 x 10(17)/cm(3). Further, it is shown that the threshold voltage values of accumulation mode PSOI MOSFETs predicted by the present model match very closely with the experimental results, better than those obtained with the models previously reported in the literature. (C) 2012 Elsevier B.V. All rights reserved.

Evolution of microhardness and microstructure in a cast Al–7 % Si alloy during high-pressure torsion

Disks of a cast Al-7 % Si alloy were processed through high-pressure torsion (HPT) for 1/4, 1/2, 1, 5, and 10 revolutions under a pressure of 6.0 GPa and at temperatures of 298 and 445 K. The hardness of the samples after processing was significantly higher than in the cast sample, and the hardness profiles across the samples became more uniform with increasing numbers of turns. Processing at higher temperature gave lower hardness values. Experiments were conducted to examine the effects of HPT processing on various microstructural aspects of the cast Al-7 % Si alloy such as the grain size, the Taylor factor, and the fraction of high-angle grain boundaries. The results demonstrate that there is a correlation between trends in the microhardness values and the observed microstructures.

Effects of different modes of hot cross-rolling in 7010 aluminum alloy: part I. evolution of microstructure and texture

The current study describes the evolution of microstructure and texture in an Al-Zn-Mg-Cu-Zr-based 7010 aluminum alloy during different modes of hot cross-rolling. Processing of materials involves three different types of cross-rolling. The development of texture in the one-step cross-rolled specimen can be described by a typical beta-fiber having the maximum intensity near Copper (Cu) component. However, for the multi-step cross-rolled specimens, the as-rolled texture is mainly characterized by a strong rotated-Brass (Bs) component and a very weak rotated-cube component. Subsequent heat treatment leads to sharpening of the major texture component (i.e., rotated-Bs). Furthermore, the main texture components in all the specimens appear to be significantly rotated in a complex manner away from their ideal positions because of non-symmetric deformations in the two rolling directions. Detailed microstructural study indicates that dynamic recovery is the dominant restoration mechanism operating during the hot rolling. During subsequent heat treatment, static recovery dominates, while a combination of particle-stimulated nucleation (PSN) and strain-induced grain boundary migration (SIBM) causes partial recrystallization of the grain structure. The aforementioned restoration mechanisms play an important role in the development of texture components. The textural development in the current study could be attributed to the combined effects of (a) cross-rolling and inter-pass annealing that reduce the intensity of Cu component after each successive pass, (b) recrystallization resistance of Bs-oriented grains, (c) stability of Bs texture under cross-rolling, and (d) Zener pinning by Al3Zr dispersoids.

Deformation behaviour at macro- and nano-length scales: The development of orientation gradients

The deformation behaviour of macrocrystalline and nanocrystalline nickel shows a striking similarity in terms of higher intragranular misorientation and a texture with dominant Brass component on rolling. This is in contrast to microcrystalline nickel, with lower intragranular misorientation and typical Copper type texture. This has been attributed to the free surfaces in macrocrystalline sample and grain boundaries in nanocrystalline sample. Experimental evidence of `Grain Boundary Affected Zone' (GBAZ) showing multi-slip in contrast to limited slip in the grain interiors has been provided. The similarity in evolution of texture and intragranular misorientation is explained on the basis of reduced contribution from the GBAZ at the two extreme length scales.

Effect of Ti concentration on the growth of Nb3Sn between solid Nb(Ti) and liquid Sn

The change in the growth rate of the Nb3Sn product phase because of Ti addition is studied for solid Nb(Ti)-liquid Sn interactions. The growth rate increased from no Ti to 1 at.% and 2 at.% of Ti in Nb, and the activation energy decreased from 221 kJ/mol to 146 kJ/mol. Based on the estimated values, the role of grain boundary and lattice diffusion is discussed in light of the possibility of increased grain boundary area and point defects such as antisites and vacancies.

Densification mechanisms during hot pressing of ZrB2-20 vol.% SiC composite

The dominant densification mechanisms for hot pressing of ZrB2-20 vol.% SiC composite at different hot-pressing temperatures and pressures was identified. The dominant densification mechanisms were found to change over a very short temperature range. For hot pressing at 1700 degrees C, the dominant densification mechanism was found to be mechanically driven particle fragmentation and rearrangement only, whereas at 1850 degrees C a plastic flow mechanism started to become dominant after initial particle fragmentation and rearrangement. At 2000 degrees C, the dominant mechanism changed from plastic flow to grain boundary diffusion. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Evolution and stability of phases in a high temperature shape memory alloy Ni49.4Ti38.6Hf12

Ni49.4Ti38.6Hf12 shape memory alloy has been characterized for structure, microstructure and transformation temperatures. The microstructure of the as-cast sample consists of B19' and R-phases, and (Ti,Hf)(2)Ni precipitate phase along the grain boundaries in the form of dendrites. The microstructure of the solution treated sample contains only B19' martensite phase, whereas a second heat treatment after solutionizing results in reappearance of the R-phase and the (Ti,Hf)(2)Ni grain boundary precipitate phase in the microstructure. A detailed microstructural examination shows the presence of precipitates having both coherent and incoherent interface with the matrix, the type of interface being dictated by the crystallographic orientation of the matrix phase. The present study shows that the (Ti,Hf)(2)Ni precipitates having coherent interface with the matrix, drive the formation of the R-phase in the microstructure. (C) 2013 Elsevier Ltd. All rights reserved.

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Among the armoury of photovoltaic materials, thin film heterojunction photovoltaics continue to be a promising candidate for solar energy conversion delivering a vast scope in terms of device design and fabrication. Their production does not require expensive semiconductor substrates and high temperature device processing, which allows reduced cost per unit area while maintaining reasonable efficiency. In this regard, superstrate CdTe/CdS solar cells are extensively investigated because of their suitable bandgap alignments, cost effective methods of production at large scales and stability against proton/electron irradiation. The conversion efficiencies in the range of 6-20% are achieved by structuring the device by varying the absorber/window layer thickness, junction activation/annealing steps, with more suitable front/back contacts, preparation techniques, doping with foreign ions, etc. This review focuses on fundamental and critical aspects like: (a) choice of CdS window layer and CdTe absorber layer; (b) drawbacks associated with the device including environmental problems, optical absorption losses and back contact barriers; (c) structural dynamics at CdS-CdTe interface; (d) influence of junction activation process by CdCl2 or HCF2Cl treatment; (e) interface and grain boundary passivation effects; (f) device degradation due to impurity diffusion and stress; (g) fabrication with suitable front and back contacts; (h) chemical processes occurring at various interfaces; (i) strategies and modifications developed to improve their efficiency. The complexity involved in understanding the multiple aspects of tuning the solar cell efficiency is reviewed in detail by considering the individual contribution from each component of the device. It is expected that this review article will enrich the materials aspects of CdTe/CdS devices for solar energy conversion and stimulate further innovative research interest on this intriguing topic.