Ecological Condition of Coastal Ocean Waters within Stellwagen Bank National Marine Sanctuary: 2008

In June 2008, the NOAA National Ocean Service (NOS), in conjunction with the EPA National Health and Environmental Effects Laboratory (NHEERL), conducted an assessment of the status of ecological condition of soft-bottom habitat and overlying waters within the boundaries of Stellwagen Bank National Marine Sanctuary (SBNMS). The sanctuary lies approximately 20 nautical miles east of Boston, MA in the southwest Gulf of Maine between Cape Ann and Cape Cod and encompassing 638 square nautical miles (2,181 km2). A total of 30 stations were targeted for sampling using standard methods and indicators applied in prior NOAA coastal studies and EPA’s Environmental Monitoring and Assessment Program (EMAP) and National Coastal Assessment (NCA). A key feature adopted from these studies was the incorporation of a random probabilistic sampling design. Such a design provides a basis for making unbiased statistical estimates of the spatial extent of ecological condition relative to various measured indicators and corresponding thresholds of concern. Indicators included multiple measures of water quality, sediment quality, and biological condition (benthic fauna, fish tissue contaminant levels). Depths ranged from 31 – 137 m throughout the study area. About 76 % of the area had sediments composed of sands (< 20 % silt-clay), 17 % of the area was composed of intermediate muddy sands (20 – 80 % silt-clay), and 7 % of the sampled area consisted of mud (> 80 % siltclay). About 70 % of the area (represented by 21 sites) had sediment total organic carbon (TOC) concentrations < 5 mg/g and all but one site (located in Stellwagen Basin) had levels of TOC < 20 mg/g, which is well below the range potentially harmful to benthic fauna (> 50 mg/g). Surface salinities ranged from 30.6 – 31.5 psu, with the majority of the study region (approximately 80 % of the area) having surface salinities between 30.8 and 31.4 psu. Bottom salinities varied between 32.1 and 32.5 psu, with bottom salinities at all sites having values above the range of surface salinities. Surface-water temperatures varied between 12.1 and 16.8 ºC, while near-bottom waters ranged in temperature from 4.4 – 6.2 ºC. An index of density stratification (Δσt) indicated that the waters of SBNMS were stratified at the time of sampling. Values of Δσt at 29 of the 30 sites sampled in this study (96.7 % of the study area) varied from 2.1 – 3.2, which is within the range considered to be indicative of strong vertical stratification (Δσt > 2) and typical of the western Gulf of Maine in summer. Levels of dissolved oxygen (DO) were confined to a fairly narrow range in surface (8.8 – 10.4 mg/L) and bottom (8.5 – 9.6 mg/L) waters throughout the survey area. These levels are within the range considered indicative of good water quality (> 5 mg/L) with respect to DO. None of these waters had DO at low levels (< 2 mg/L) potentially harmful to benthic fauna and fish.

Genetic analysis of juvenile coho salmon (Oncorhynchus kisutch) off Oregon and Washington reveals few Columbia River wild fish

Little is known about the ocean distributions of wild juvenile coho salmon off the Oregon-Washington coast. In this study we report tag recoveries and genetic mixed-stock estimates of juvenile fish caught in coastal waters near the Columbia River plume. To support the genetic estimates, we report an allozyme-frequency baseline for 89 wild and hatchery-reared coho salmon spawning populations, extending from northern California to southern British Columbia. The products of 59 allozyme-encoding loci were examined with starch-gel electrophoresis. Of these, 56 loci were polymorphic, and 29 loci had P0.95 levels of polymorphism. Average heterozygosities within populations ranged from 0.021 to 0.046 and averaged 0.033. Multidimensional scaling of chord genetic distances between samples resolved nine regional groups that were sufficiently distinct for genetic mixed-stock analysis. About 2.9% of the total gene diversity was due to differences among populations within these regions, and 2.6% was due to differences among the nine regions. This allele-frequency data base was used to estimate the stock proportions of 730 juvenile coho salmon in offshore samples collected from central Oregon to northern Washington in June and September-October 1998−2000. Genetic mixed-stock analysis, together with recoveries of tagged or fin-clipped fish, indicates that about one half of the juveniles came from Columbia River hatcheries. Only 22% of the ocean-caught juveniles were wild fish, originating largely from coastal Oregon and Washington rivers (about 20%). Unlike previous studies of tagged juveniles, both tag recoveries and genetic estimates indicate the presence of fish from British Columbia and Puget Sound in southern waters. The most salient feature of genetic mixed stock estimates was the paucity of wild juveniles from natural populations in the Columbia River Basin. This result reflects the large decrease in the abundances of these populations in the last few decades.

B itte r an d Sw e e t /Um am i Ta s te Re c ep to rs w ith D iffe ren tly Evo lu tio n a ry Pa thw ays

通过生物信息学和系统发育学分析,研究了苦味受体和甜味/鲜味受体的进化途径。结果显示,苦味受体 和甜味/鲜味受体在进化上具有远相关,并且具有不同的进化途径,提示这可能是导致这些受体具有不同功能,传 导不同味觉的原因。

ApcD is necessary for efficient energy transfer from phycobilisomes to photosystem I and helps to prevent photoinhibition in the cyanobacterium Synechococcus sp PCC 7002

Phyrobilisomes (PBS) are the major light-harvesting, protein-pigment complexes in cyanobacteria and red algae. PBS absorb and transfer light energy to photosystem (PS) II as well as PS I, and the distribution of light energy from PBS to the two photosystems is regulated by light conditions through a mechanism known as state transitions. In this study the quantum efficiency of excitation energy transfer from PBS to PS I in the cyanobacterium Synechococcus sp. PCC 7002 was determined, and the results showed that energy transfer from PBS to PS I is extremely efficient. The results further demonstrated that energy transfer from PBS to PS I occurred directly and that efficient energy transfer was dependent upon the allophycocyanin-B alpha subunit, ApcD. In the absence of ApcD, cells were unable to perform state transitions and were trapped in state 1. Action spectra showed that light energy transfer from PBS to PS I was severely impaired in the absence of ApcD. An apcD mutant grew more slowly than the wild type in light preferentially absorbed by phyrobiliproteins and was more sensitive to high light intensity. On the other hand, a mutant lacking ApcF, which is required for efficient energy transfer from PBS to PS II, showed greater resistance to high light treatment. Therefore, state transitions in cyanobacteria have two roles: (1) they regulate light energy distribution between the two photosystems; and (2) they help to protect cells from the effects of light energy excess at high light intensities. (C) 2009 Elsevier B.V. All rights reserved.

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.