Annual-layer thickness, d18O and sodium values on Akademii Nauk ice core (AD 900-1998) based on core chronology AN 2012

Understanding recent Arctic climate change requires detailed information on past changes, in particular on a regional scale. The extension of the depth-age relation of the Akademii Nauk (AN) ice core from Severnaya Zemlya (SZ) to the last 1100 yr provides new perspectives on past climate fluctuations in the Barents and Kara seas region. Here, we present the easternmost high-resolution ice-core climate proxy records (d18O and sodium) from the Arctic. Multi-annual AN d18O data as near-surface air-temperature proxies reveal major temperature changes over the last millennium, including the absolute minimum around 1800 and the unprecedented warming to a double-peak maximum in the early 20th century. The long-term cooling trend in d18O is related to a decline in summer insolation but also to the growth of the AN ice cap as indicated by decreasing sodium concentrations. Neither a pronounced Medieval Climate Anomaly nor a Little Ice Age are detectable in the AN d18O record. In contrast, there is evidence of several abrupt warming and cooling events, such as in the 15th and 16th centuries, partly accompanied by corresponding changes in sodium concentrations. These abrupt changes are assumed to be related to sea-ice cover variability in the Barents and Kara seas region, which might be caused by shifts in atmospheric circulation patterns. Our results indicate a significant impact of internal climate variability on Arctic climate change in the last millennium.

Mineralogy and diagenesis: Their effect on acoustic and electrical properties of pelagic clays at DSDP Leg 86 Holes

Analysis of pelagic clay samples from Sites 576, 578, and 581 shows that physical, acoustic, and electrical trends with increasing burial depth are related to mineralogical and diagenetic changes. The properties of interest are bulk density (roo), porosity (phi), compressional-wave velocity (Vp) and velocity anisotropy (Ap), and electrical resistivity (Ro) and resistivity anisotropy (Ar). In general, as demonstrated in particular for the brown pelagic clay, the increase in roo, Vp, Ro, and to a lesser extent Ap and Ar with increasing depth is primarily caused by decreasing phi (and water content) as a result of compaction. The mineralogy and chemistry of the pelagic clays vary as a function of burial depth at all three sites. These variations are interpreted to reflect changes in the relative importance of detrital and diagenetic components. Mineralogical and chemical variations, however, play minor roles in determining variations in acoustic and electrical properties of the clays with increasing burial depth.

Number of living and dead foraminifers in the upprmost layer of bottom sediments from the Pacific shelf of South America and environmental characteristics

After death of benthic and planktic foraminifera their tests intensive dissolve in sediments of the upper sublittoral zone (depth 30-60 m) in the highest productivity area of surface water in the northern Peruvian region. Dissolution of fine pelitic ooze is more intensive than of sandy sediments. Rate of dissolution is lower in the lower sublittoral zone (60-200 m) than in the upper part of the zone. Within the upper bathyal zone (300-500 m) dissolution decreases and results to accumulation of carbonate test in this zone. Benthic tests are more abundant than planktic ones. Very poor species composition and a peculiar set of species are characteristic of foraminiferal assemblages found in the sublittoral and upper bathyal zones along the Peruvian coast.

Composite depth scales, ash layer correlations and splice tie points of ODP Site 186-1151

We present composite depth scales for the multiply cored intervals from Sites 1150 and 1151. These new depth scales place coeval strata recovered in cores from different holes at a single site into a common stratigraphic framework. At Site 1150, double coring between Holes 1150A and 1150B occurred over only a short interval between ~703 and 713 meters below seafloor (mbsf), but this is sufficient to tie the upper portion of the stratigraphic section cored in Hole 1150A to the lower portion cored in Hole 1150B. The upper ~100 m of the sedimentary section at Site 1151 was double cored with the advanced piston corer and partially cored with the rotary core barrel, resulting in the complete recovery of this interval. The composite depth scales were constructed using Splicer software to vertically adjust the relative depths of various cores from one hole to the depths from another hole so as to align distinct physical properties measured on cores. The magnetic susceptibility data was the physical property most easily correlated between holes, and therefore primarily used to create a composite depth scale and spliced stratigraphic section. The spliced section is a continuous stratigraphic section constructed from representative cored intervals from the holes at a site. Both the splice and the composite depth scale can be applied to other data sets from Site 1151 to provide a stratigraphically continuous and laterally consistent basis for interpreting lithologic features or data sets. The resulting composite scale showed a 30% improvement in correlation of the magnetic susceptibility data relative to the original mbsf depth scale, and comparable improvement when applied to the other data sets.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.