Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films

Based on experimental results and theoretical analysis effects of the crystal structure on the optical and electrical properties of pyrite FeS2 films produced by thermally sulfurizing iron films at various temperatures have been systematically studied. The results indicate that the crystal structure and some related factors, such as the crystallization and the stoichiometry, remarkably influence the optical and electrical performances of the pyrite films. It is also shown that the preferred orientation of the crystal grain plays a major role in determining the crystal structure and the optical and electrical properties of the pyrite FeS2 films. Also we find that it is the crystal grains, rather than the particles that exercise a decisive influence on the electrical performance of pyrite films. (C) 2003 Elsevier Science B.V. All rights reserved.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.

A method to obtain ground state electroluminescence from 1.3 mu m emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

1.3 mum emitting InAs/GaAs quantum dots (QDs) have been grown by molecular beam epitaxy and QD light emitting diodes (LEDs) have been fabricated. In the electroluminescence spectra of QD LEDs, two clear peaks corresponding to the ground state emission and the excited state emission are observed. It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect. This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.

Atomic hydrogen induced step bunching and fabrication of quantum wire arrays on GaAs (311)A substrate by molecular beam epitaxy

Atomic hydrogen assisted molecular beam epitaxy (MBE) is a novel type of epitaxial growth of nanostructures. The GaAs (311)A surface naturally forms one-dimensional step arrays by step bunching along the direction of (-233) and the space period is around 40nm. The step arrays extend over several mum without displacement. The InGaAs quantum wire arrays are grown on the step arrays as the basis. Our results may prompt further development of more uniform quantum wire and quantum dot arrays.

Photoluminescence of nanocrystalline SiC films prepared by rf magnetron sputtering

Amorphous Sic films are deposited on Si (111) substrates by rf magnetron sputtering and then annealed at 1200 degreesC for different times by a dc self-heating method in a vacuum annealing system. The crystallization of the amorphous Sic is determined by Raman scattering at room temperature and X-ray diffraction. The experimental result indicates that the Sic nanocrystals have formed in the films. The topography of the as-annealed films is characterized by atomic force microscopy. Measurements of photoluminescence of the as-annealed films show blue or violet light emission from the nanocrystalline Sic films and photoluminescence peak shifts to short wavelength side as the annealing time decreases.

Optical-phonon modes and Frohlich potential in quantum dots

By extending the microscopic dipole model on optical-phonon modes as applied in quantum wells and quantum wires, to rectangular quantum dots (QD), optical phonon modes and their accompanying Frohlich potentials in QD are calculated and classified. When the bulk phonon dispersion is ignored, the optical phonon modes in QD can be clearly divided into the confined LO- and TO-bulk-like modes and the extended interface-like modes. Among the interface-like modes, a special attention is given to the corner modes, whose anisotropic behavior is depicted in the long wavelength limit. Based on the numerical results, a set of analytical formula are proposed to approximately describe the bulk-like modes, for which both the optical displacements and Frohlich potentials vanish at the interfaces. (C) 2000 Elsevier Science Ltd. All rights reserved.

Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds

A systematic study of syntheses and magnetic properties of the Nd-3 Fe29-xCrx (x=4.5, 4.7, 5.0, and 5.5) compounds has been performed. The single-phase compounds of Nd3Fe29-xCrx can be formed in the range 4.5 less than or equal to x less than or equal to 5.5. The Curie temperature Tc, the saturation magnetization M-S at 4.2 K, the anisotropy field H-A at 4.2 K and room temperature, and the intra-sublattice exchange coupling parameter j(FeFe) at 4.2 K for the Nd3Fe29-xCrx compounds decrease with increasing Cr composition from x=4.5 to 5.5, respectively. Nitrogenation and carbonation, unlike hydrogenation, result mainly in improvements of the Curie temperature, the saturation magnetization and the anisotropy field at 4.2 K and room temperature for the Nd3Fe29-xCrx compounds compared with their parent compounds.

Quantum confinement of phonon modes in GaAs quantum dots

Phonon modes in spherical GaAs quantum dots (QDs) with up to 11,855 atoms (8 nm in size) are calculated by using an empirical microscopic model. The group theory is employed to reduce the computational intensity, which further allows us to investigate the quantum confinement of phonon modes with different symmetries and reveals a phenomenon that phonon modes with different symmetries have different quantum confinement effect. For zinc-blende structure, the modes with the A(1) symmetry has the strongest quantum confinement effect and the T-1 modes the weakest. This could cause a crossover of symmetries of the highest frequency from A(1) to T-2 when the size of QDs decreases. (C) 1999 Elsevier Science Ltd, All rights reserved.

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

Preparation of I-2 clusters and their absorption spectra

Samples have been prepared at different temperatures by loading It molecules into the cages of zeolite 5A, and the measurements of the absorption spectra have been carried out for the prepared samples. It is shown that 12 molecular clusters are formed in the cages of zeolite 5A, and it is also found that molecular clusters which are bonded with intermolecular forces have an important feature, namely, the intermolecular distance in molecular clusters can be changed on different preparing conditions and the blue shift of absorption edges can not be as the criterion of forming molecular clusters.

Structure and magnetic properties of nitrides R3Fe29-xCrxN4

A systematic investigation of nitrides R3F29-xCrxN4 (R = Y, Ce, Nd, Sm, Gd, Tb, and Dy) has been performed. The nitrogen concentration in the nitride R3Fe29-xCrxNy was determined to be y = 4. Nitrogenation leads to a relative volume expansion of about 5.3%. The lattice constants and unit cell volume decrease with increasing rare earth atomic number from Nd to Dy, reflecting the lanthanide contraction. In average, the increase of Curie temperature upon nitrogenation is about 200 K, compared with its parent compound. The nitrogenation also results in a remarkable improvement in the saturation magnetization and anisotropy fields for R3Fe29-x CrxN4 at 4.2 K and room temperature, compared with their parent compounds. A spin reorientation of Nd3Fe24.5Cr4.5N4 occurs at around 368 K, which is 138 K higher than that of Nd3F24.5Cr4.5. Magnetohistory effects of R3Fe29-xCrxN4 (R = Nd and Sm) are observed in a low field of 0.04 T. First-order magnetization process occurs in Sm3Fe24.0Cr5.0N4 in magnetic fields of around 3.0 T at 4.2 K. After nitrogenation the easy magnetization direction of Sm3Fe24.0C5.0 is changed from the easy-cone structure to the uniaxial. The excellent intrinsic magnetic properties of Sm3Fe24.0Cr5.0N4 make this compound a hopeful candidate for new high-performance permanent magnets.

Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G

The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/AlxGa1-xN superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/AlxGa1-xN superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/AlxGa1-xN SL can be proposed to engineer the nonlinear responses.

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.

Formation and Properties of a Novel Heavy-Metal Chalcogenide Glass Doped with a High Dysprosium Concentration

A novel heavy-metal chalcogenide glass doped with a high dysprosium ion (Dy(3+)) concentration was prepared by the well-established melt-quenching technique from high-purity elements. The results show that when Cadmium (Cd) is introduced into chalcogenide glass, the concentration of Dy(3+) ions doped in GeGaCdS glasses is markedly increased, the thermodynamic performance improves, and the difference between T(g) and T(x) is >120 degrees C. The Vickers microhardness is also modified greatly, about 245 kgf/mm(2). The optical spectra indicate that all absorption and emission bands of Dy(3+) are clearly observed and red-shifted with increasing Dy(3+) concentration.

场发射(FED)用荧光粉的研制与改性

场发射平板显示器（Field Emission Displays, FED）是一种新发展起来的平板显示器，由于其在亮度、视角、响应时间、工作温度范围、能耗等方面具有优良的特性，成为近年新型显示器研究的热点之一。为实现高效的FED红、绿、蓝全色显示，荧光粉在其中起着十分重要的作用。制备性能优良的场发射用彩色荧光粉是决定将来FED技术成功与否的关键因素之一。 本论文研究的内容包括场发射(FED)用荧光粉的研制和改性工作。在场发射(FED)用荧光粉研制方面，采用溶胶-凝胶方法，制备了一系列新型场发射(FED)用荧光粉，包括稀土离子激活的镓酸镧 [(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm)]体系、铟酸钙[(CaIn2O4: Re3+ (Re = Eu, Pr, Tb, Dy,)]体系、铟酸锶[(SrIn2O4: Re3+ (Re = Pr, Tb, Dy)]体系、镓酸镥[Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)]体系，并研究了Pr, Sm, Eu, Tb, Dy, Tm等稀土离子在这些基质中的光致发光、低压阴极射线发光性质和能量传递等性质。在荧光粉的改性方面，采用喷雾热解法制备了Sr2CeO4球形场发射用荧光粉，研究了喷雾前驱体溶液中，聚乙二醇浓度、金属离子浓度、烧结温度对形貌及发光性能的影响；采用溶胶－凝胶方法成功将SiO2表明包覆一层CaTiO3:Pr3+, Y3Al5O12:Ce3+/Tb3+荧光粉，得到单分散，球形形貌，分布均匀，具有核/壳结构的球形荧光粉；另外研究了不同的制备方法对Ga2O3:Dy3+荧光粉的发光性能的影响。所得样品用XRD、FTIR、SEM、TEM、漫反射光谱、光致发光(PL)光谱、荧光寿命曲线、低压阴极射线(CL)光谱等进行表征。 在紫外光激发下，稀土离子激活的镓酸镧彩色荧光粉有基质(LaGaO3)的发射和稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射，研究表明在基质和稀土离子之间存在能量传递，其能量传递效率因离子而异。在阴极射线激发下，样品仅有稀土离子(Eu3+, Tb3+, Dy3+, Tm3+, Sm3+)的特征发射。如：LaGaO3: Eu3+发红光，LaGaO3: Dy3+发白光，LaGaO3: Tm3+发蓝光，LaGaO3: Sm3+发黄光，LaGaO3: Sm3+,Tb3+发白光。LaGaO3: Tb3+的发光颜色可通过不同Tb3+的掺杂浓度从蓝光到绿光进行调控。在相同的激发条件下，所制备的蓝光发射的LaGaO3: Tb3+和LaGaO3: Tm3+荧光粉与商业FED用蓝粉(Y2SiO5: Ce3+，日亚化学工业株式会社，NP-1047)相比具有更好的色纯度和更高的发光效率；所制备的黄光发射的LaGaO3: Sm3+荧光粉与商业低压黄色荧光粉((Zn,Cd)S: Ag，日亚化学工业株式会社，NP-1020)相比，色纯度接近，但具有更高的发光效率。并首次实现了单一基质中白光发射(LaGaO3: Sm3+,Tb3+), 所制备的稀土离子激活的镓酸镧彩色荧光粉[(LaGaO3: Re3+ (Re = Eu, Tb, Dy, Tm, Sm )]在场发射器件有潜在的应用。 在稀土离子掺杂的Sr/CaIn2O4荧光粉体系中，在基质Sr/CaIn2O4和掺杂离子Pr3+/Tb3+/Dy3+存在高效能量传递。基质Sr/CaIn2O4吸收能量向激活离子Pr3+/ Tb3+/Dy3+传递，发射为稀土离子Pr3+/Tb3+/Dy3+的特征发射，发光强度、荧光寿命等符合应用要求，在低压电子束激发下，Sr/CaIn2O4: Pr3+/Tb3+/Dy3+荧光粉为稀土离子的特征发射，其低压阴极射线发光(CL)光谱与光致发光(PL)发射光谱一致，CL强度随激发电压，电流密度增加而增强。 对于CaIn2O4:Eu3+荧光粉，进一步研究表明CaIn2O4:Eu3+荧光粉的光致发光和阴极射线发光颜色可以通过掺杂不同浓度的Eu3+从白光，黄光，到红光进行调控。低浓度掺杂发白光，高浓度掺杂发红光，适当的浓度发黄光。 在Lu3Ga5O12:Re3+ (Re = Eu, Tb，Pr)荧光粉体系中，在紫外（UV）和低压阴极射线激发下，所制备的荧光粉Lu3Ga5O12: Eu3+, Lu3Ga5O12: Pr3+为稀土离子Eu3+, Pr3+的特征发射，分别发黄光和绿光。Lu3Ga5O12:Tb3+的发光颜色因Tb3+掺杂浓度不同而不同，低浓度掺杂发蓝光，高浓度发绿光。 Sr2CeO4荧光粉在UV及低压阴极射线激发下发出强烈蓝光，源于配体到金属离子电荷迁移带跃迁(Ce4+-O2-)。其阴极射线发光强度与电压及灯丝电流呈良好的线性关系。 采用溶胶－凝胶方法的核壳结构的SiO2@CaTiO3:Pr3+和SiO2@Y3Al5O12: Ce3+/Tb3+荧光粉, FESEM和TEM结果表明这种核壳结构的发光材料表面致密，厚度均匀，保持了单分散SiO2微球的形貌特征。在UV及低压阴极射线激发下，SiO2@CaTiO3:Pr3+呈强红色发射，源于Pr3+ 的1D2—3H4 (612 nm)跃迁；SiO2@Y3Al5O12:Ce3+和SiO2@Y3Al5O12:Tb3+ 分别发黄绿光和绿光，源于Ce3+的5d-4f和Tb3+的5D4-7FJ (J = 6, 5, 4, 3)跃迁。PL强度可以通过包覆次数调控，CL强度随激发电压及灯丝电流增加而增强。 在Ga2O3:Dy3+荧光粉体系中，采用了溶胶-凝胶，氨水共沉淀，和高温固相法制备了Ga2O3:Dy3+荧光粉并比较了他们的结晶行为，形貌，光致发光和低压阴极射线发光性能。溶胶-凝胶法制备由于原料在分子层次上混合，可以得到纯相，氨水共沉淀和高温固相法原料不如溶胶凝胶法混合均匀，很难得到纯相。溶胶-凝胶和氨水共沉淀所得荧光粉为纳米级别大小，分别呈球形和玉米棒形状；高温固相法微米级别且呈不规则形状。Ga2O3向Dy3+传递能量效率依次按溶胶-凝胶，氨水共沉淀，和高温固相法逐渐降低。在紫外光激发下，分别发白光，蓝白光，蓝光。其低压阴极射线发光与光致发光类似。相比之下，溶胶-凝胶法制备Ga2O3:Dy3+荧光粉比氨水共沉淀和高温固相法制备要好。