Simulationen zur Exzitonendiffusion in organischen Halbleitern

Die vorliegende Dissertation dient dazu, das Verständnis des Exzitonentransports in organischen Halbleitern, wie sie in Leuchtdioden oder Solarzellen eingesetzt werden, zu vertiefen. Mithilfe von Computersimulationen wurde der Transport von Exzitonen in amorphen und kristallinen organischen Materialien beschrieben, angefangen auf mikroskopischer Ebene, auf der quantenmechanische Prozesse ablaufen, bis hin zur makroskopischen Ebene, auf welcher physikalisch bestimmbare Größen wie der Diffusionskoeffizient extrahierbar werden. Die Modellbildung basiert auf dem inkohärenten elektronischen Energietransfer. In diesem Rahmen wird der Transport des Exzitons als Hüpfprozess aufgefasst, welcher mit kinetischen Monte-Carlo Methoden simuliert wurde. Die notwendigen quantenmechanischen Übergangsraten zwischen den Molekülen wurden anhand der molekularen Struktur fester Phasen berechnet. Die Übergangsraten lassen sich in ein elektronisches Kopplungselement und die Franck-Condon-gewichtete Zustandsdichte aufteilen. Der Fokus dieser Arbeit lag einerseits darauf die Methoden zu evaluieren, die zur Berechnung der Übergangsraten in Frage kommen und andererseits den Hüpftransport zu simulieren und eine atomistische Interpretation der makroskopischen Transporteigenschaften der Exzitonen zu liefern. rnrnVon den drei untersuchten organischen Systemen, diente Aluminium-tris-(8-hydroxychinolin) der umfassenden Prüfung des Verfahrens. Es wurde gezeigt, dass stark vereinfachte Modelle wie die Marcus-Theorie die Übergangsraten und damit das Transportverhalten der Exzitonen oftmals qualitativ korrekt wiedergeben. Die meist deutlich größeren Diffusionskonstanten von Singulett- im Vergleich zu Triplett-Exzitonen haben ihren Ursprung in der längeren Reichweite der Kopplungselemente der Singulett-Exzitonen, wodurch ein stärker verzweigtes Netzwerk gebildet wird. Der Verlauf des zeitabhängigen Diffusionskoeffizienten zeigt subdiffusives Verhalten für kurze Beobachtungszeiten. Für Singulett-Exzitonen wechselt dieses Verhalten meist innerhalb der Lebensdauer des Exzitons in ein normales Diffusionsregime, während Triplett-Exzitonen das normale Regime deutlich langsamer erreichen. Das stärker anomale Verhalten der Triplett-Exzitonen wird auf eine ungleichmäßige Verteilung der Übergangsraten zurückgeführt. Beim Vergleich mit experimentell bestimmten Diffusionskonstanten muss das anomale Verhalten der Exzitonen berücksichtigt werden. Insgesamt stimmten simulierte und experimentelle Diffusionskonstanten für das Testsystem gut überein. Das Modellierungsverfahren sollte sich somit zur Charakterisierung des Exzitonentransports in neuen organischen Halbleitermaterialien eignen.

Dotierte Nanographenstreifen mit definierten Randstrukturen

Die in der vorliegenden Dissertation entwickelten organochemischen Protokolle und Konzepte erweitern die Bottom-Up-Synthese von atompräzisen Nanographenstreifen (GNR) um zwei fundamentale Bereiche. Zum einen die Dotierung der halbleitenden GNR mit Schwefel oder Stickstoffatomen und zum anderen ein Protokoll für eine lösungsbasierte Synthese von stickstoffdotierten Zickzack-Streifen.rnDie Dotierung von GNR beinhaltet die Synthese von monomeren Bausteinen bei denen, im Gegensatz zu ihren reinen Kohlenstoffhomologen, definierte Positionen am Rand mit zwei oder vier Stickstoff- beziehungsweise zwei Schwefelatomen ersetzt wurden. Die Synthese atompräziser GNR konnte mit verschiedenen experimentellen Methoden analysiert und anschaulich über STM visualisiert werden. Neben einer n-Dotierung gelang so auch erstmals eine Bottom-Up-Synthese von schwefeldotierten GNR. Eine mögliche Anwendung in der Nanoelektronik aufbauend auf dotierten GNR wurde bestätigt, indem durch Co-Polymerisation von stickstoffhaltigen mit reinen Kohlenstoffmonomeren Heteroschnittstellen zwischen dotierten und undotierten Bereichen hergestellt werden konnten. Solche Heteroschnittstellen sind fundamentale Grundlage von Dioden und damit Basis einer Vielzahl elektronischer Elemente wie Solarzellen oder Leuchtdioden.rnWährend für halbleitende GNR mit einer Armlehnen-Form ein breites Spektrum an organischen Syntheseprotokollen zur Verfügung stand, existierte zu Beginn dieser Arbeit keines für GNR mit Zickzack-Struktur. Innerhalb dieser Arbeit konnte eine Bottom-Up-Synthese zur Erschließung stickstoffdotierter GNR mit Zickzack-Randstruktur erarbeitet werden. Durch die Verwendung eines (2-Hydroxymethyl)phenylboronsäureesters werden Hydroxymethylsubsituenten entlang eines Polyphenylenrückgrats eingebaut, die nach Kondensation mit dem Stickstoffatom eine Zickzack-Kante ergeben. Innerhalb der synthetisierten Zielstrukturen kann das 9a-Azaphenalen als letztes, bislang nicht erschlossenes Isomer der Azaphenalene, als wiederkehrende Struktur, gefunden werden. Die Reaktivität der Zickzackkante konnte zudem zum Aufbau einer Vielzahl bislang unzugänglicher, polycyclischer Heteroaromaten über 1,3-dipolare Addition dieses polycyclischen Azomethin Ylides (PAMY) genutzt werden.rn

Novel materials for direct X-ray detectors based on semiconducting organic polymers

Conventional inorganic materials for x-ray radiation sensors suffer from several drawbacks, including their inability to cover large curved areas, me- chanical sti ffness, lack of tissue-equivalence and toxicity. Semiconducting organic polymers represent an alternative and have been employed as di- rect photoconversion material in organic diodes. In contrast to inorganic detector materials, polymers allow low-cost and large area fabrication by sol- vent based methods. In addition their processing is compliant with fexible low-temperature substrates. Flexible and large-area detectors are needed for dosimetry in medical radiotherapy and security applications. The objective of my thesis is to achieve optimized organic polymer diodes for fexible, di- rect x-ray detectors. To this end polymer diodes based on two different semi- conducting polymers, polyvinylcarbazole (PVK) and poly(9,9-dioctyluorene) (PFO) have been fabricated. The diodes show state-of-the-art rectifying be- haviour and hole transport mobilities comparable to reference materials. In order to improve the X-ray stopping power, high-Z nanoparticle Bi2O3 or WO3 where added to realize a polymer-nanoparticle composite with opti- mized properities. X-ray detector characterization resulted in sensitivties of up to 14 uC/Gy/cm2 for PVK when diodes were operated in reverse. Addition of nanoparticles could further improve the performance and a maximum sensitivy of 19 uC/Gy/cm2 was obtained for the PFO diodes. Compared to the pure PFO diode this corresponds to a five-fold increase and thus highlights the potentiality of nanoparticles for polymer detector design. In- terestingly the pure polymer diodes showed an order of magnitude increase in sensitivity when operated in forward regime. The increase was attributed to a different detection mechanism based on the modulation of the diodes conductivity.

Sintesi di complessi luminescenti anionici di Ir(III)

Negli ultimi anni si è osservato un crescente sviluppo della ricerca nel campo dei materiali luminescenti per le loro diverse applicazioni reali e potenziali, fra cui l’impiego in dispositivi elettroluminescenti, quali OLEDs (Organic Light-Emitting Diodes) e LECs (Light-Emitting Electrochemical Cells). In modo particolare, si rivolge grande attenzione ai complessi ciclometallati di Ir(III) grazie alle peculiari caratteristiche che li contraddistinguono fra i materiali luminescenti, come l'emissione fosforescente, alte rese quantiche di emissione, lunghi tempi di vita e buona stabilità nei dispositivi. Oltre a tali caratteristiche uno dei principali vantaggi presentati dai complessi di Ir(III) è la possibilità di modulare la lunghezza d'onda di emissione modificando la struttura dei leganti ciclometallanti e ancillari. Considerata la versatilità di questi sistemi e la loro conseguente rilevanza, diverse sono state le strategie applicate per l'ottenimento di complessi di Ir(III) generalmente neutri e cationici; al contrario pochi esempi di complessi di Ir(III) anionici sono attualmente riportati in letteratura. Lo scopo del mio lavoro di tesi è stato quindi quello di sintetizzare tre nuovi complessi anionici luminescenti di Ir(III) con tre diversi leganti ciclometallanti. Il piano di lavoro è stato suddiviso in stadi successivi, partendo dalla sintesi dei tre leganti ciclometallanti, impiegati poi nella preparazione dei dimeri di Ir(III) precursori dei miei complessi; infine facendo reagire questi ultimi con un legante ancillare bisanionico, derivato dal di(1H-tetrazol-5-il)metano, si è giunti all'ottenimento di tre complessi anionici luminescenti di Ir(III). Dopo questa prima parte, il lavoro di tesi è proseguito con la caratterizzazione spettroscopica dei tre complessi anionici e la determinazione delle loro proprietà fotofisiche tramite la registrazione di spettri di assorbimento, di emissione e la determinazione delle rese quantiche di emissione e dei tempi di vita. Infine si è preparato un “soft salt” costituito da un complesso anionico e uno cationico di Ir(III) le cui caratteristiche sono tutt'ora oggetto di studio del gruppo di ricerca presso il quale ho svolto il mio lavoro di tesi.

Testing the GlaaS algorithm for dose measurements on low- and high-energy photon beams using an amorphous silicon portal imager

The GLAaS algorithm for pretreatment intensity modulation radiation therapy absolute dose verification based on the use of amorphous silicon detectors, as described in Nicolini et al. [G. Nicolini, A. Fogliata, E. Vanetti, A. Clivio, and L. Cozzi, Med. Phys. 33, 2839-2851 (2006)], was tested under a variety of experimental conditions to investigate its robustness, the possibility of using it in different clinics and its performance. GLAaS was therefore tested on a low-energy Varian Clinac (6 MV) equipped with an amorphous silicon Portal Vision PV-aS500 with electronic readout IAS2 and on a high-energy Clinac (6 and 15 MV) equipped with a PV-aS1000 and IAS3 electronics. Tests were performed for three calibration conditions: A: adding buildup on the top of the cassette such that SDD-SSD = d(max) and comparing measurements with corresponding doses computed at d(max), B: without adding any buildup on the top of the cassette and considering only the intrinsic water-equivalent thickness of the electronic portal imaging devices device (0.8 cm), and C: without adding any buildup on the top of the cassette but comparing measurements against doses computed at d(max). This procedure is similar to that usually applied when in vivo dosimetry is performed with solid state diodes without sufficient buildup material. Quantitatively, the gamma index (gamma), as described by Low et al. [D. A. Low, W. B. Harms, S. Mutic, and J. A. Purdy, Med. Phys. 25, 656-660 (1998)], was assessed. The gamma index was computed for a distance to agreement (DTA) of 3 mm. The dose difference deltaD was considered as 2%, 3%, and 4%. As a measure of the quality of results, the fraction of field area with gamma larger than 1 (%FA) was scored. Results over a set of 50 test samples (including fields from head and neck, breast, prostate, anal canal, and brain cases) and from the long-term routine usage, demonstrated the robustness and stability of GLAaS. In general, the mean values of %FA remain below 3% for deltaD equal or larger than 3%, while they are slightly larger for deltaD = 2% with %FA in the range from 3% to 8%. Since its introduction in routine practice, 1453 fields have been verified with GLAaS at the authors' institute (6 MV beam). Using a DTA of 3 mm and a deltaD of 4% the authors obtained %FA = 0.9 +/- 1.1 for the entire data set while, stratifying according to the dose calculation algorithm, they observed: %FA = 0.7 +/- 0.9 for fields computed with the analytical anisotropic algorithm and %FA = 2.4 +/- 1.3 for pencil-beam based fields with a statistically significant difference between the two groups. If data are stratified according to field splitting, they observed %FA = 0.8 +/- 1.0 for split fields and 1.0 +/- 1.2 for nonsplit fields without any significant difference.

Electron transport in molecular systems

The remarkable advances in nanoscience and nanotechnology over the last two decades allow one to manipulate individuals atoms, molecules and nanostructures, make it possible to build devices with only a few nanometers, and enhance the nano-bio fusion in tackling biological and medical problems. It complies with the ever-increasing need for device miniaturization, from magnetic storage devices, electronic building blocks for computers, to chemical and biological sensors. Despite the continuing efforts based on conventional methods, they are likely to reach the fundamental limit of miniaturization in the next decade, when feature lengths shrink below 100 nm. On the one hand, quantum mechanical efforts of the underlying material structure dominate device characteristics. On the other hand, one faces the technical difficulty in fabricating uniform devices. This has posed a great challenge for both the scientific and the technical communities. The proposal of using a single or a few organic molecules in electronic devices has not only opened an alternative way of miniaturization in electronics, but also brought up brand-new concepts and physical working mechanisms in electronic devices. This thesis work stands as one of the efforts in understanding and building of electronic functional units at the molecular and atomic levels. We have explored the possibility of having molecules working in a wide spectrum of electronic devices, ranging from molecular wires, spin valves/switches, diodes, transistors, and sensors. More specifically, we have observed significant magnetoresistive effect in a spin-valve structure where the non-magnetic spacer sandwiched between two magnetic conducting materials is replaced by a self-assembled monolayer of organic molecules or a single molecule (like a carbon fullerene). The diode behavior in donor(D)-bridge(B)-acceptor(A) type of single molecules is then discussed and a unimolecular transistor is designed. Lastly, we have proposed and primarily tested the idea of using functionalized electrodes for rapid nanopore DNA sequencing. In these studies, the fundamental roles of molecules and molecule-electrode interfaces on quantum electron transport have been investigated based on first-principles calculations of the electronic structure. Both the intrinsic properties of molecules themselves and the detailed interfacial features are found to play critical roles in electron transport at the molecular scale. The flexibility and tailorability of the properties of molecules have opened great opportunity in a purpose-driven design of electronic devices from the bottom up. The results that we gained from this work have helped in understanding the underlying physics, developing the fundamental mechanism and providing guidance for future experimental efforts.

Curing lights for orthodontic bonding: a systematic review and meta-analysis

INTRODUCTION Light cure of resin-based adhesives is the mainstay of orthodontic bonding. In recent years, alternatives to conventional halogen lights offering reduced curing time and the potential for lower attachment failure rates have emerged. The relative merits of curing lights in current use, including halogen-based lamps, light-emitting diodes (LEDs), and plasma arc lights, have not been analyzed systematically. In this study, we reviewed randomized controlled trials and controlled clinical trials to assess the risks of attachment failure and bonding time in orthodontic patients in whom brackets were cured with halogen lights, LEDs, or plasma arc systems. METHODS Multiple electronic database searches were undertaken, including MEDLINE, EMBASE, and the Cochrane Oral Health Group's Trials Register, CENTRAL. Language restrictions were not applied. Unpublished literature was searched on ClinicalTrials.gov, the National Research Register, Pro-Quest Dissertation Abstracts, and Thesis database. Search terms included randomized controlled trial, controlled clinical trial, random allocation, double blind method, single blind method, orthodontics, LED, halogen, bond, and bracket. Authors of primary studies were contacted as required, and reference lists of the included studies were screened. RESULTS Randomized controlled trials and clinical controlled trials directly comparing conventional halogen lights, LEDs, or plasma arc systems involving patients with full arch, fixed, or bonded orthodontic appliances (not banded) with follow-up periods of a minimum of 6 months were included. Using predefined forms, 2 authors undertook independent extraction of articles; disagreements were resolved by discussion. The assessment of the risk of bias of the randomized controlled trials was based on the Cochrane Risk of Bias tool. Ten studies met the inclusion criteria; 2 were excluded because of high risk of bias. In the comparison of bond failure risk with halogen lights and plasma arc lights, 1851 brackets were included in both groups. Little statistical heterogeneity was observed in this analysis (I(2) = 4.8%; P = 0.379). There was no statistical difference in bond failure risk between the groups (OR, 0.92; 95% CI, 0.68-1.23; prediction intervals, 0.54, 1.56). Similarly, no statistical difference in bond failure risk was observed in the meta-analysis comparing halogen lights and LEDs (OR, 0.96; 95% CI, 0.64-1.44; prediction intervals, 0.07, 13.32). The pooled estimates from both comparisons were OR, 0.93; 95% CI, 0.74-1.17; and prediction intervals, 0.69, 1.17. CONCLUSIONS There is no evidence to support the use of 1 light cure type over another based on risk of attachment failure.

Formation of supramolecular polymers by chrysene oligomers

Supramolecular assembly of π-conjugated systems is of large interested due to the possibility to use them in electronic devices.[1] Chrysene is a polyaromatic hydrocarbon which has been studied e.g for organic light-emitting diodes (OLEDs).[2] In continuation of our previous work involving the supramolecular polymerisation of pyrene oligomers [3] an oligomer consisting of three chrysenes linked by phophodiesters was synthesised (Chry3). UV-Vis measurements show that aggregates of Chry3 are formed in aqueous medium. This is illustrated by general hypochromicity, a change in vibronic band intensities and, in particular, the appearance of a red-shifted absorption band in the S0 → S2 transition. The data suggest the formation of J-aggregates. The formation of supramolecular polymers is further studied by temperature-dependent absorption- and fluorescence measurements, and by atomic force microscopy (AFM).

Establishing a fiber-optic-based optical neural interface.

Selective expression of opsins in genetically defined neurons makes it possible to control a subset of neurons without affecting nearby cells and processes in the intact brain, but light must still be delivered to the target brain structure. Light scattering limits the delivery of light from the surface of the brain. For this reason, we have developed a fiber-optic-based optical neural interface (ONI), which allows optical access to any brain structure in freely moving mammals. The ONI system is constructed by modifying the small animal cannula system from PlasticsOne. The system for bilateral stimulation consists of a bilateral cannula guide that has been stereotactically implanted over the target brain region, a screw cap for securing the optical fiber to the animal's head, a fiber guard modified from the internal cannula adapter, and a bare fiber whose length is customized based on the depth of the target region. For unilateral stimulation, a single-fiber system can be constructed using unilateral cannula parts from PlasticsOne. We describe here the preparation of the bilateral ONI system and its use in optical stimulation of the mouse or rat brain. Delivery of opsin-expressing virus and implantation of the ONI may be conducted in the same surgical session; alternatively, with a transgenic animal no opsin virus is delivered during the surgery. Similar procedures are useful for deep or superficial injections (even for neocortical targets, although in some cases surface light-emitting diodes or cortex-apposed fibers can be used for the most superficial cortical targets).

Periodontal and peri-implant wound healing following laser therapy

Laser irradiation has numerous favorable characteristics, such as ablation or vaporization, hemostasis, biostimulation (photobiomodulation) and microbial inhibition and destruction, which induce various beneficial therapeutic effects and biological responses. Therefore, the use of lasers is considered effective and suitable for treating a variety of inflammatory and infectious oral conditions. The CO2 , neodymium-doped yttrium-aluminium-garnet (Nd:YAG) and diode lasers have mainly been used for periodontal soft-tissue management. With development of the erbium-doped yttrium-aluminium-garnet (Er:YAG) and erbium, chromium-doped yttrium-scandium-gallium-garnet (Er,Cr:YSGG) lasers, which can be applied not only on soft tissues but also on dental hard tissues, the application of lasers dramatically expanded from periodontal soft-tissue management to hard-tissue treatment. Currently, various periodontal tissues (such as gingiva, tooth roots and bone tissue), as well as titanium implant surfaces, can be treated with lasers, and a variety of dental laser systems are being employed for the management of periodontal and peri-implant diseases. In periodontics, mechanical therapy has conventionally been the mainstream of treatment; however, complete bacterial eradication and/or optimal wound healing may not be necessarily achieved with conventional mechanical therapy alone. Consequently, in addition to chemotherapy consisting of antibiotics and anti-inflammatory agents, phototherapy using lasers and light-emitting diodes has been gradually integrated with mechanical therapy to enhance subsequent wound healing by achieving thorough debridement, decontamination and tissue stimulation. With increasing evidence of benefits, therapies with low- and high-level lasers play an important role in wound healing/tissue regeneration in the treatment of periodontal and peri-implant diseases. This article discusses the outcomes of laser therapy in soft-tissue management, periodontal nonsurgical and surgical treatment, osseous surgery and peri-implant treatment, focusing on postoperative wound healing of periodontal and peri-implant tissues, based on scientific evidence from currently available basic and clinical studies, as well as on case reports.

Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes

We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detection

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Evidence of charge carrier number fluctuations in InN thin films?

Due to its small band-gap and its high mobility, InN is a promising material for a large number of key applications like band-gap engineering for high efficiency solar cells, light emitting diodes, and high speed devices. Unfortunately, it has been reported that this material exhibits strong surface charge accumulation which may depend on the type of surface. Current investigations are conducted in order to explain the mechanisms which govern such a behavior and to look for ways of avoiding it and/or finding applications that may use such an effect. In this framework, low frequency noise measurements have been performed at different temperatures on patterned MBE grown InN layers. The evolution of the 1/f noise level with temperature in the 77 K-300 K range is consistent with carrier number fluctuations thus indicating surface mechanisms: the surface charge accumulation is confirmed by the noise measurements.

Substrate nanopatterning by e-beam lithography to growth ordered arrays of III-nitride nanodetectors, white light emitters, and solar cells

III-nitride nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitride nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow with high order on pre-defined sites on a pre-patterned substrate

E-beam nanopatterning for the selective area growth of III-V nitride nanorods

GaN/InGaN nanorods have attracted much scientific interest during the last decade because of their unique optical and electrical properties [1,2]. The high crystal quality and the absence of extended defects make them ideal candidates for the fabrication of high efficiency opto-electronic devices such as nano-photodetectors, light-emitting diodes, and solar cells [1-3]. Nitrides nanorods are commonly grown in the self-assembled mode by plasma-assisted molecular beam epitaxy (MBE) [4]. However, self-assembled nanorods are characterized by inhomogeneous heights and diameters, which render the device processing very difficult and negatively affect the electronic transport properties of the final device. For this reason, the selective area growth (SAG) mode has been proposed, where the nanorods preferentially grow on pre-defined sites on a pre-patterned substrate [5].