Stress corrosion studies of ion implanted austenitic steel

Stress corrosion studies of 50 Mn18Cr4 austenitic steel implanted with 120 keV N+, 100 keV Cr+, 200 keV and 400 keV Er+ ions were carried out by constant strain method in the nitrate solution. Surface composition and depth profiles of the implanted material were measured by AES sputter etching technique. The results exhibit that nitrogen implantation has no significant affection to the stress corrosion, but the chromium and erbium implantation has prolonged the incubation period of the stress corrosion cracking. (C) 1999 Kluwer Academic Publishers.

Corrosion inhibition of carbon steel in tetra-n-butylammonium bromide aqueous solution by benzotriazole and Na3PO4

The corrosion inhibition behavior of benzotriazole, Na3PO4 and their mixture on carbon steel in 20 wt.% (0.628 mol l(-1)) tetra-n-butylammonium bromide aerated aqueous solution was investigated by weight-loss test, potentiodynamic polarization measurement, electrochemical impedance spectroscopy and scanning electron microscope/energy dispersive X-ray techniques. The inhibition action of BTA or SP or inhibitors mixture on the corrosion of carbon steel is mainly due to the inhibition of anodic process of corrosion. The results revealed that inhibitors mixtures have shown synergistic effects at lower concentration of inhibitors. At 2 g l(-1) BTA and 2 g l(-1) SP showed optimum enhanced inhibition compared with their individual effects.

Electron tunneling through double magnetic barriers on the surface of a topological insulator

We study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. For the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many Fabry-Perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. Points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.

ELECTRON-TRANSPORT THROUGH GAALAS BARRIERS IN GAAS

We have analyzed electronic transport through a single, 200-angstrom-thick, Ga0.74Al0.36As barrier embedded in GaAs. At low temperatures and high electric field, the Fowler-Nordheim regime is observed, indicating that the barrier acts as insulating layers. At higher temperatures the thermionic regime provides an apparent barrier height, decreasing with the field, which is equal to the expected band offset when extrapolated to zero field. However, for some samples, the current is dominated by the presence of electron traps located in the barrier. A careful analysis of the temperature and field behavior of this current allows to deduce that the mechanism involved is field-enhanced emission from electron traps. The defects responsible are tentatively identified as DX centers, resulting from the contamination of the barrier by donor impurities.

LO-PHONON-ASSISTED TUNNELING IN ASYMMETRIC DOUBLE-WELL STRUCTURES WITH THICK BARRIERS

Nonresonant electron tunneling between asymmetric double quantum wells in AlxGa1-xAs/GaAs systems has been investigated by using steady-state and time-resolved photoluminescence spectra. Experimental evidence of LO-phonon-assisted tunneling through thick barriers has been obtained by enhancing excitation power densities or applying electric fields perpendicular to the well plane. LO-phonon-assisted tunneling times have also been estimated from the variation of the decay time of the narrow-well photoluminescence with applied electric fields. Our findings suggest that LO phonons in the barriers play an important role in the tunneling transfer.

A Numerical Method for Calculating Transmission Coefficients Across Arbitrary Potential Barriers with High Accuracy

We report a new method for calculating transmission coefficients across arbitrary potential barriers based on the Runge-Kutta method. A numerical solution of the Schrodinger equation is calculated using the Runge-Kutta method,and a new model is established to analyze the numerical results to find the transmission coefficient. This technique is applied to various cases, such as parabolic potential barrier and double-barrier structures. Transmission probability with high precision is obtained and discussed. The tunnelling current density through a MOS structure is also explored and the result coincides with the Fowler-Nordheim model,which indicates the applicability of our method.

Low-frequency noise properties of GaN Schottky barriers deposited on intermediate temperature buffer layers

Metal-semiconductor-metal (MSM) structures were fabricated by RF-plasma-assisted MBE using different buffer layer structures. One type of buffer structure consists of an AlN high-temperature buffer layer (HTBL) and a GaN intermediate temperature buffer layer (ITBL), another buffer structure consists of just a single A IN HTBL. Systematic measurements in the flicker noise and deep level transient Fourier spectroscopy (DLTFS) measurements were used to characterize the defect properties in the films. Both the noise and DLTFS measurements indicate improved properties for devices fabricated with the use of ITBL and is attributed to the relaxation of residue strain in the epitaxial layer during growth process. (C) 2003 Elsevier Ltd. All rights reserved.

Controllable synthesis of metal hydroxide and oxide nanostructures by ionic liquids assisted electrochemical corrosion method

Cu(OH)(2) nanowires have been synthesized by anodic oxidation of copper through a simple electrolysis process employing ionic liquid as an electrolyte. Controlling the electrochemical conditions can qualitatively modulate the lengths, amounts, and shapes of Cu(OH)(2) nanostructures. A rational mechanism based on coordination self-assembly and oriented attachment is proposed for the selective formation of the polycrystalline Cu(OH)(2) nanowires. In addition, the FeOOH nanoribbons, Ni(OH)(2) nanosheets, and ZnO nanospheres were also synthesized by this route, indicative of the universality of the electrochemical route presented herein. The morphologies and structures of the synthesized nanostructures have been characterized by transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), powder X-ray diffraction (XRD). Fourier transform infrared spectra (FT-IR), and thermogravimetric (TG). (C) 2007 Elsevier Masson SAS. All rights reserved

Electrochemical corrosion behavior of cast Mg-Al-RE-Mn Alloys in NaCl solution

The electrochemical corrosion behavior of Mg-6Al-0.4Mn and Mg-6Al-4RE-0.4Mn (RE = Mischmetal) alloys is investigated in 3.5% NaCl solution. The results of corrosion process, polarization behavior, and electrochemical impedance spectroscopy of the alloys reveal that Mg-6Al-4RE-0.4Mn exhibits enhanced corrosion resistance. The addition of RE stabilizes the solid solution and modifies the passive film through a finer microstructure.

Effect of Nd on the microstructure, mechanical properties and corrosion behavior of die-cast Mg-4Al-based alloy

Die-cast Mg-4Al-0.4Mn-xNd(x = 0, 1, 2, 4 and 6 wt.%) magnesium alloys were prepared successfully and influences of Nd on the microstructure, mechanical properties and corrosion behavior of the Mg-4Al-0.4Mn alloy have been investigated. The results showed that with the addition of Nd binary Al2Nd phase and Al11Nd3 phase. which mainly aggregated along the grain boundaries, were formed, and the relative ratio of above two phases was in correlation with the Nd content in the alloy. Meanwhile, the grain sizes were greatly reduced with the increasing Nd content. It was found that due to the addition of Nd both the tensile properties and corrosion resistance were improved substantially.

Micro structures, tensile properties and corrosion behavior of die-cast Mg-4Al-based alloys containing La and/or Ce

In order to study the properties of Mg-Al-RE (AE) series alloys, the Mg-4Al-4RE-0.4Mn (RE= La, Ce/La mischmetal or Ce) alloys were developed. Their microstructures, tensile properties and corrosion behavior have been investigated. The results show that the phase compositions of Mg-4Al-4La-0.4Mn alloy consist of alpha-Mg and Al11La3 phases. While two binary Al-RE (RE = Ce/La) phases, Al11RE3 and Al2RE, are formed in Mg-4Al-4Ce/La-0.4Mn alloy, and Al11Ce3 and Al2Ce are formed in Mg-4Al-4Ce-0.4Mn alloy.