Structural, optical and nanomechanical properties of (1 1 1) oriented nanocrystalline ZnTe thin films

Structural, optical and nanomechanical properties of nanocrystalline Zinc Telluride (ZnTe) films of thickness upto 10 microns deposited at room temperature on borosilicate glass substrates are reported. X-ray diffraction patterns reveal that the films were preferentially oriented along the (1 1 1) direction. The maximum refractive index of the films was 2.74 at a wavelength of 2000 nm. The optical band gap showed strong thickness dependence. The average film hardness and Young's modulus obtained from load-displacement curves and analyzed by Oliver-Pharr method were 4 and 70 GPa respectively. Hardness of (1 1 1) oriented ZnTe thin films exhibited almost 5 times higher value than bulk. The studies show clearly that the hardness increases with decreasing indentation size, for indents between 30 and 300 nm in depth indicating the existence of indentation size effect. The coefficient of friction for these films as obtained from the nanoscratch test was ~0.4.

Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.

Photocatalytic properties of KBiO(3) and LiBiO(3) with tunnel structures

In the present study, KBiO(3) is synthesized by a standard oxidation technique while LiBiO(3) is prepared by hydrothermal method. The synthesized catalysts are characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), BET surface area analysis and Diffuse Reflectance Spectroscopy (DRS). The XRD patterns suggest that KBiO(3) crystallizes in the cubic structure while LiBiO(3) crystallizes in orthorhombic structure and both of these adopt the tunnel structure. The SEM images reveal micron size polyhedral shaped KBiO(3) particles and rod-like or prismatic shape particles for LiBiO(3). The band gap is calculated from the diffuse reflectance spectrum and is found to be 2.1 eV and 1.8 eV for KBiO(3) and LiBiO(3), respectively. The band gap and the crystal structure data suggest that these materials can be used as photocatalysts. The photocatalytic activity of KBiO(3) and LiBiO(3) are evaluated for the degradation of anionic and cationic dyes, respectively, under UV and solar radiations.

Axial wave propagation in coupled nanorod system with nonlocal small scale effects

This article deals with the axial wave propagation properties of a coupled nanorod system with consideration of small scale effects. The nonlocal elasticity theory has been incorporated into classical rod/bar model to capture unique features of the coupled nanorods under the umbrella of continuum mechanics theory. Nonlocal rod model is developed for coupled nanorods. The strong effect of the nonlocal scale has been obtained which leads to substantially different wave behavior of nanorods from those of macroscopic rods. Explicit expressions are derived for wavenumber, cut-off frequency and escape frequency of nanorods. The analysis shows that the wave characteristics of nanorods are highly over estimated by the classical rod model, which ignores the effect of small-length scale. The studies also shows that the nonlocal scale parameter introduces certain band gap region in axial or longitudinal wave mode, where no wave propagation occurs. This is manifested in the spectrum cures as the region, where the wavenumber tends to infinite or wave speed tends to zero. The effect of the coupled spring stiffness is also capture in the present analysis. It has been also shown that the cut-off frequency increases as the stiffness of the coupled spring increases and also the coupled spring stiffness has no effect on escape frequency of the axial wave mode in the nanorod. This cut-off frequency is also independent of the nonlocal small scale parameter. The present study may bring in helpful insights while investigating multiple-nanorod-system-models for future nano-optomechanical systems applications. The results can also provide useful guidance for the study and design of the next generation of nanodevices that make use of the wave propagation properties of coupled single-walled carbon nanotubes or coupled nanorods. (C) 2011 Elsevier Ltd. All rights reserved.

Optical and structural properties of TiO2 films deposited by Sol-Gel technique

TiO2 thin films were prepared by sol gel method. The structural investigations performed by means of X- ray diffraction (XRD) technique, Scanning electronic microscopy (SEM) showed the shape structure at T=600°C. The optical constants of the deposited film were obtained from the analysis of the experimental recorded transmittance spectral data over the wavelengths range 200-3000 nm. The values of some important parameters (refractive index n, dielectric constant ε ∞ and thickness d), and the third order optical nonlinear susceptibility χ(3) of TiO2 film are determined from these spectra. It has been found that the dispersion data obey the single oscillator relation of the Wemple-DiDomenico model, from which the dispersion parameters and high – frequency dielectric constant were determined. The estimation of the corresponding band gap Eg , χ (3) and ε ∞ are 2.57 eV, 0.021 × 10-10 esu and 5.20,respectively.

Giant photoinduced optical bleaching at room and liquid helium temperatures in Sb/As(2)S(3) multilayered films

We report the observation of giant photo induced optical bleaching in Sb/As(2)S(3) multilayered film at room and liquid He temperatures, when irradiated with 532 nm laser at moderate intensities. The experimental results show a dramatic increase in transmittance near the band gap regime at both the temperatures; however the rates at which transmission change occurs are rather slow at low temperature. The huge change in transmission is due to the photo induced intermixing of As(2)S(3) layer with Sb. Our XPS measurements show that photo induced intermixing occurs through the wrong homopolar bonds, which under actinic light illumination are converted into energetically favored hetropolar bonds. (C) 2011 Elsevier B.V. All rights reserved.

Electrochemical copolymerization of thiophene derivatives; a precursor to photovoltaic devices

This work presents an electrochemical technique for the polymerization and copolymerization of thiophene derivatives like 7,9-dithiophene-2yl-8H-cyclopenta[a]acenaphthalene-8-one and 3-hexylthiophene. The structural characterization of chemically synthesized monomers and electro-chemically synthesized polymers was carried out by nuclear magnetic resonance and Fourier transform infrared spectroscopy. Thermal characterizations indicate that copolymer has increased thermal stability than that of homopolymer. Morphological studies of the polymerized films carried out by scanning electron microscopy shows network structure of copolymer. Optical properties of the homopolymers and copolymer were studied by UV-visible spectrometer and it was observed that band gap of copolymer is less than the homopolymers. HOMO and LUMO levels, band gap values of the respective polymers were also calculated from the cyclic voltammetry technique with various scan rates. By the peak current obtained from various scan rates shows that all polymerization reactions are diffusion controlled process. Charge transfer resistances of polymers were determined using Nyquist plots. Conductivity of synthesized polymers shows higher conductivity for copolymer than homopolymers. (C) 2011 Elsevier Ltd. All rights reserved.

Effect of Te addition on the optical properties of As(2)S(3) thin film

Bilayer thin films of Te/As(2)S(3) were prepared from Te and As(2)S(3) by thermal technique under high vacuum. Optical constants were calculated by analysing the transmission spectrum in the spectral range 400-1100 nm. The optical band gap decreases with the addition of Te to As(2)S(3). The decrease of optical band gap has been explained on the basis of density of states and the increase in disorder in the system. We have irradiated the as-deposited films using a diode pumped solid state laser of 532 nm wavelength to study photo-diffusion of Te into As(2)S(3). The changes were characterised by Fourier Transform Infrared and X-ray Photoelectron Spectroscopy (XPS). The optical band gap is found to be decreased with the light irradiation which is proposed due to homopolar bond formation. The core level peaks in XPS spectra give information about different bond formation. (C) 2011 Elsevier B.V. All rights reserved.

Combustion synthesis, characterization and Raman studies of ZnO nanopowders

Spherical shaped ZnO nanopowders (14-50 nm) were synthesized by a low temperature solution combustion method in a short time <5 min. Rietveld analysis show that ZnO has hexagonal wurtzite structure with lattice constants a = 3.2511(1) angstrom, c = 5.2076(2) angstrom, unit cell volume (V) = 47.66(5) (angstrom)(3) and belongs to space group P63mc. SEM micrographs reveal that the particles are spherical in shape and the powders contained several voids and pores. TEM results also confirm spherical shape, with average particle size of 14-50 nm. The values are consistent with the grain sizes measured from Scherrer's method and Williamson-Hall (W-H) plots. A broad UV-vis absorption spectrum was observed at similar to 375 nm which is a characteristic band for the wurtzite hexagonal pure ZnO. The optical energy band gap of 3.24 eV was observed for nanopowder which is slightly lower than that of the bulk ZnO (3.37 eV). The observed Raman peaks at 438 and 588 cm(-1) were attributed to the E(2) (high) and E(1) (LO) modes respectively. The broad band at 564 cm(-1) is due to disorder-activated Raman scattering for the A(1) mode. These bands are associated with the first-order Raman active modes of the ZnO phase. The weak bands observed in the range 750-1000 cm(-1) are due to small defects. (C) 2011 Elsevier B.V. All rights reserved.

Optical, electrical and dielectric properties of TiO(2)-SiO(2) films prepared by a cost effective sol-gel process

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (1 0 0) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200 degrees C for their possible use in optoelectronic applications. (C) 2011 Elsevier B.V. All rights reserved.

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO(2) thin films by DC magnetron sputtering

Titanium dioxide (TiO(2)) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO(2) films has been analyzed by X-ray photoelectron spectroscopy. The TiO(2) films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO(2) into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO(2)/p-Si have been fabricated. The leakage current density of unbiased films was 1 x10(-6) A/cm(2) at a gate bias voltage of 1.5 V and it was decreased to 1.41 x 10(-7) A/cm(2) with the increase of substrate bias voltage to -150 V owing to the increase in thickness of interfacial layer of SiO(2). Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at -150 V. The capacitance at 1 MHz for unbiased films was 2.42 x 10(-10) F and it increased to 5.8 x 10(-10) F in the films formed at substrate bias voltage of -150 V. Dielectric constant of TiO(2) films were calculated from capacitance-voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at -150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to -150 V. (C) 2011 Elsevier B. V. All rights reserved.

Tuning of the metal-insulator transition in iodine incorporated amorphous carbon

We present the synthesis and properties of iodine incorporated amorphous carbon films. Optical studies depict a decrease in band gap with variation in iodine content and pyrolysis temperature. Tuning of the metal-insulator transition is achieved by varying the pyrolysis temperature and iodine concentration. Appreciable decrease in magnetoresistance is observed with iodine incorporation, but negative magnetoresistance typical behavior of metallic samples is not witnessed.

Investigations on multimagnetron sputtered Zn1-xMgxO thin films through metal-ferroelectric-semiconductor configuration

The effect of Mg doping in ZnO is investigated through structural, electrical, and optical properties. Zn1−xMgxO (0<×<0.3) thin films were deposited on Si (100) and corning glass substrates using multimagnetron sputtering. Investigations on the structural properties of the films revealed that the increase in Mg concentration resulted in phase evolution from hexagonal to cubic phase. The temperature dependent study of dielectric constant at different frequencies exhibited a dielectric anomaly at 110 °C. The Zn0.7Mg0.3O thin films exhibited a well-defined polarization hysteresis loop with a remnant polarization of 0.2 μC/cm2 and coercive field of 8 kV/cm at room temperature. An increase in the band gap with an increase in Mg content was observed in the range of 3.3–3.8 eV for x = 0–0.3. The average transmittance of the films was higher than 90% in the wavelength region λ = 400–900 nm.

Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se/As2S3 films

Optical parameters of chalcogenide glass multilayers with 12–15 nm modulation lengths prepared by thermal evaporation can be changed by laser irradiation. Photoluminescence (PL) studies were carried out on such nonirradiated and irradiated multilayered samples of a-Se/As2S3 (sublayer thickness of a-Se is 4–5 nm for one set of samples and 1–2 nm for the other set. However As2S3 sublayer thickness is 11–12 nm for both sets of samples.) PL intensity can be increased by several orders of magnitude by reducing the Se well layer (lower band gap) thickness and can be further increased by irradiating the samples with appropriate wavelengths in the range of the absorption edge. The broadening of luminescence bands takes place either with a decrease in Se layer thickness or with irradiation. The former is due to the change in interface roughness and defects because of the enhanced structural disorder while the latter is due to photoinduced interdiffusion. The photoinduced interdiffusion creates defects at the interface between Se and As2S3 by forming an As–Se–S solid solution. From the deconvoluted PL spectrum, it is shown that the peak PL intensity, full width half maximum, and the PL quantum efficiency of particular defects giving rise to PL, can be tuned by changing the sublayer thickness or by interdiffusion.

Structural, electrical, and optical properties of as-grown and heat treated ultra-thin SnS films

The composition, structural, electrical, and optical properties of as-grown and heat treated tin-mono-sulfide (SnS) ultra-thin films have been studied. The ultra-thin SnS films were prepared on glass substrates by thermal resistive evaporation technique. All the SnS films contained nanocrystallites and exhibited p-type conductivity with a low Hall-mobility, <50 cm(2)/Vs. All these films are highly tin rich in nature and exhibited orthorhombic crystal structure. As compared to other films, the SnS films annealed at 300 degrees C showed a low electrical resistivity of similar to 36 Omega cm with an optical band gap of similar to 1.98 eV. The observed electrical and optical properties of all the films are discussed based on their composition and structural parameters. These nanocrystalline ultra-thin SnS films could be expected as a buffer layer for the development of tandem solar cell devices due to their low-resistivity and high absorbability with an optimum band gap. (C) 2011 Elsevier B.V. All rights reserved.