996 resultados para Alummium-silicon Alloy


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Microstructural stability of nanocrystalline Ni-1.5wt.%P alloy with an initial grain size of 3 nm processed by pulsed electrodeposition was studied using differential scanning calorimetry (DSC) and annealing. Microstructural characterization suggests that the observed exothermic peak during heating in DSC is related to both concurrent grain growth and Ni3P formation. Nanoindentation on samples with grain sizes from 3 to 50 nm revealed a breakdown in Hall-Petch strengthening in nano Ni-P alloy at grain sizes <= 10 nm, consistent with some previous observations. It is concluded that there is a grain boundary weakening regime for grain sizes < 10 nm, based on analysis which show that the data cannot be rationalized in terms of microstrain relaxation, variation in elastic modulus, texture evolution and duplex structure formation.

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A fatigue crack growth rate study has been carried out on L-72 aluminium alloy plate specimens with and without cold worked holes. The cold worked specimens showed significantly increased fatigue life compared to unworked specimens. Computer software is developed to evaluate the stress intensity factor for non-uniform stress distributions using Green's function approach. The exponents for the Paris equation in the stable crack growth region for cold worked and unworked specimens are 1.26 and 3.15 respectively. The reduction in exponent value indicates the retardation in crack growth rate. An SEM study indicates more plastic deformation at the edge of the hole for unworked samples as compared to the worked samples during the crack initiation period.

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Using a total of 1052 Bragg reflections of silicon, an X-ray investigation has been carried out to deduce the anharmonic thermal parameter beta, apart from the estimation of the harmonic contribution of the thermal vibration at room temperature. Reflections of type h + k + l = 4n, and 4n +/- 1 were used to estimate these parameters using MoKalpha radiation and a Nonius CAD-4 X-ray diffractometer. We obtain B(Si) = 0.451 (0.008) angstrom2 and beta(Si) = 0.279(2.630) eV angstrom-3 with R = 3.12%. The present B and beta values are in very good agreement with the earlier studies.

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The hot workability of an Al-Mg-Si alloy has been studied by conducting constant strain-rate compression tests. The temperature range and strain-rate regime selected for the present study were 300-550 degrees C and 0.001-1 s(-1), respectively. On the basis of true stress data, the strain-rate sensitivity values were calculated and used for establishing processing maps following the dynamic materials model. These maps delineate characteristic domains of different dissipative mechanisms. Two domains of dynamic recrystallization (DRX) have been identified which are associated with the peak efficiency of power dissipation (34%) and complete reconstitution of as-cast microstructure. As a result, optimum hot ductility is achieved in the DRX domains. The strain rates at which DRX domains occur are determined by the second-phase particles such as Mg2Si precipitates and intermetallic compounds. The alloy also exhibits microstructural instability in the form of localized plastic deformation in the temperature range 300-350 degrees C and at strain rate 1 s(-1).

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The influence of Li+ ions on the corrosion behaviour of the Al-Li alloy 8090-T851 and of commercially pure aluminium in aqueous solutions at pH 12 was studied by weight loss and electrochemical polarisation methods. The inhibiting role of Li+ was concentration dependent, corrosion rate decreasing lineally with log[Li+] in the concentration range 10(-4)-10(-1) mol L(-1). A change from general to pitting corrosion was evident from scanning election microscopy studies. Polarisation studies revealed that Li+ primarily acts as an anodic inhibitor (passivator). Passive film formation and stability also become more feasible with increasing Li+ concentration. Fitting potential was dependent on the Cl- ion concentration in the solution. Both materials were affected similarly by the presence of Li+ ions, the corrosion rate of the alloy being slightly lower. This is attributed to the lithium in the alloy acting as a source of lithium for passive film formation. (C) 1995 The Institute of Materials.

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Thermal analysis and interrupted quench experiments have been carried out to study the formation of beta-FeSiAl5 and (Be-Fe)-BeSiFe2Al8 phases in Al-7Si-0.3Mg alloy with and without Be addition. In the base alloy with 0.6% Fe (without Be addition), a needle- and plate-shaped beta-phase is present in the interdendritic regions and is formed by a ternary eutectic reaction. In the Be- added alloy with 0.6% Fe, a Be-Fe phase of Chinese script and polygon shapes grows along with the primary alpha-Al dendrites, leading to superior mechanical properties. It is proposed that this Be-Fe phase is formed by a peritectic reaction. Be addition has also resulted in some grain refinement.

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In the present investigation, Al 2024-15vol.%Al2O3 particulate (average size, 18 mu m) composites were fabricated using the liquid metallurgy route. The wear and friction characteristics of Al alloy 2024 and Al 2024-15vol.%Al2O3p, composite in the as-extruded and peak-aged conditions were studied using a pin-on-disc machine (with a steel disc as the counterface material). The worn surfaces, subsurfaces and the debris were analysed in a scanning electron microscope.The performance of the composite in the as-extruded condition is slightly inferior to that of the unreinforced alloy. However, in the T6 condition, although the wear rates of two materials are initially comparable, the unreinforced alloy seizes while the composite does not within the tested range employed. In the as-extruded condition, the presence of Al2O3 particles is not particularly beneficial as they fracture and result in extensive localized cracking and removal of material from the surface. In the peak-aged condition, however, while the unreinforced alloy exhibits severe plastic deformation and undergoes seizure, there is no significant change in the mechanism in the case of the composite. Except in the case of the peak-aged unreinforced alloy, worn surfaces of all other materials show the presence of an iron-rich layer.

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A steel ball was slid on aluminium-silicon alloys at different temperatures. After the coefficient of friction had been measured, the surface shear stress was deconvoluted using a two-term model of friction. The ratio of surface shear stress to bulk hardness was calculated as a function of temperature, silicon content and alloying additions. These results are qualitatively similar to those recorded for pre-seizure specimens slid against an En24 disc in a pin-on-disc machine. This similarity, when viewed in the context of the phenomenon of bulk shear, provides a model for seizure of these alloys.

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Deformation processing and microstructural development of an alpha(2)/O aluminide alloy Ti-25Al-15Nb (at.%) was studied in the temperature range of 950 to 1200 degrees C and strain rate range of 10(-3) to 100 s(-1). Regions of processing and instability were identified using dynamic materials model. Dynamic recrystallization (DRX) of alpha(2)/O phase and p phase were seen to occur in the region of 950 to 1050 degrees C/0.001 to 0.05 s(-1) and 1125 to 1175 degrees C/0.001 to 0.1 s(-1), respectively. Unstable flow was seen to occur in the region of 1050 to 1190 degrees C/10 to 100 s(-1). Thermal activation analysis showed that DRX of alpha(2)/O and beta was controlled by cross-slip.

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In 1990 Enderby and Barnes reviewed the electrical properties of liquid alloys which show features associated with semiconducting behaviour. They proposed an empirical classification scheme based on the notion that some liquid semiconductors are characterized by a finite gap in σ (E), the energy-dependent conductivity (narrow definition), whereas in others σ (E) is continuous (broad definition). Interesting behaviour occurs for systems at the narrow/broad boundary and further analysis of these liquid alloys will form the subject matter of this paper. Particular attention will be focused on liquid silver chalcogenides as these offer a severe test of current theories.

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The present work deals with an ultrasonic type of wave propagation characteristics of monolayer graphene on silicon (Si) substrate. An atomistic model of a hybrid lattice involving a hexagonal lattice of graphene and surface atoms of diamond lattice of Si is developed to identify the carbon-silicon bond stiffness. Properties of this hybrid lattice model is then mapped into a nonlocal continuum framework. Equivalent force constant due to Si substrate is obtained by minimizing the total potential energy of the system. For this equilibrium configuration, the nonlocal governing equations are derived to analyze the ultrasonic wave dispersion based on spectral analysis. From the present analysis we show that the silicon substrate affects only the flexural wave mode. The frequency band gap of flexural mode is also significantly affected by this substrate. The results also show that, the silicon substrate adds cushioning effect to the graphene and it makes the graphene more stable. The analysis also show that the frequency bang gap relations of in-plane (longitudinal and lateral) and out-of-plane (flexural) wave modes depends not only on the y-direction wavenumber but also on nonlocal scaling parameter. In the nonlocal analysis, at higher values of the y-directional wavenumber, a decrease in the frequency band gap is observed for all the three fundamental wave modes in the graphene-silicon system. The atoms movement in the graphene due to the wave propagation are also captured for all the tree fundamental wave modes. The results presented in this work are qualitatively different from those obtained based on the local analysis and thus, are important for the development of graphene based nanodevices such as strain sensor, mass and pressure sensors, atomic dust detectors and enhancer of surface image resolution that make use of the ultrasonic wave dispersion properties of graphene. (C) 2011 Elsevier Ltd. All rights reserved.

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Rapid solidification of a ternary Al-Cu-Zr alloy results in a nanocomposite microstructure. In this study, melt spinning a Al82Cu15Zr3 alloy has resulted in the combined occurrence of, (a) 0.5 mu m sized grains of Al solid solution and (b) fine grains (10-20 nm) of intermetallic Al2Cu (theta) and alpha-Al, along side each other. The larger alpha-Al grains contain nanometric GP zones, with the Zr addition resulting in a grain refinement. In the other type of microstructure Zr promotes simultaneous nucleation of nanosized grains of the two equilibrium phases, Al2Cu and alpha-Al. Both these lead to a very high hardness of similar to 540 VHN for this alloy and can be used as a candidate for a high strength alloy with good ductility at a low strain rate.

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Using a dynamic materials model, processing and instability maps have been developed for near-alpha titanium alloy 685 in the temperature range 775-1025 degrees C and strain-rate range of 0.001-10 s(-1) to optimise its hot workability. The alloy's beta-transus temperature lies at about 1020 degrees C. The material undergoes superplasticity with a peak efficiency of 80% at 975 degrees C and 0.001 s(-1), which are the optimum parameters for alpha-beta working. The occurrence of superplasticity is attributed to two-phase microduplex structure, higher strain-rate sensitivity, low flow stress and sigmoidal variation between log flow stress and log strain rate. The material also exhibits how localisation due to adiabatic shear-band formation up to its beta-transus temperature with strain rates greater than 0.02 s(-1) and thus cracking along these regions. (C) 1997 Published by Elsevier Science S.A.

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The reactivation kinetics of passivated boron accepters in hydrogenated silicon during zero bias annealing in the temperature range of 65-130 degrees C are reported, For large annealing times and high annealing temperatures, the reactivation process follows second-order kinetics and is rate limited by a thermally activated <(H)over tilde (2)> complex formation process, For short annealing times and low annealing temperatures, the reactivation rate is found to be larger than that due to <(H)over tilde (2)> complex formation alone. We conclude that the faster reactivation is caused by the diffusion of the liberated hydrogen atoms into the bulk as well as <(H)over tilde (2)> complex formation. The effective diffusion coefficient of hydrogen is measured and found to obey the Arrhenius relation with an activation energy (1.41 +/- 0.1) eV. (C) 1997 American Institute of Physics.