Transparent oxide semiconductors for advanced display applications

The article discusses the progress and issues related to transparent oxide semiconductor (TOS) TFTs for advanced display and imaging applications. Amorphous oxide semiconductors continue to spark new technological developments in transparent electronics on a multitude of non-conventional substrates. Applications range from high-frame-rate interactive displays with embedded imaging to flexible electronics, where speed and transparency are essential requirements. TOS TFTs exhibit high transparency as well as high electron mobility even when fabricated at room temperature. Compared to conventional a-Si TFT technology, TOS TFTs have higher mobility and sufficiently good uniformity over large areas, similar in many ways to LTPS TFTs. Moreover, because the amorphous oxide semiconductor has higher mobility compared to that of conventional a-Si TFT technology, this allows higher-frame-rate display operation. This would greatly benefit OLED displays in particular because of the need for lower-cost higher-mobility analog circuits at every subpixel.

Advanced carbon nanotubes and carbon nanotube fibers for biosensing applications

Since the discovery of Carbon Nanotubes (CNTs) by Iijima in 1991[1, 2], there has been an explosion of research into the physical and chemical properties of this novel material. CNT based biosensors can play an important role in amperometric, immunosensor and nucleic-acid sensing devices, e.g. for detection of life threatening biological agents in time of war or in terrorist attacks, saving life and money for the NHS. CNTs offer unique advantages in several areas, like high surfacevolume ratio, high electrical conductivity, chemical stability and strong mechanical strength, and CNT based sensors generally have higher sensitivities and lower detection limit than conventional ones. In this review, recent advances in biosensors utilising carbon nanotubes and carbon nanotube fibres will be discussed. The synthesis methods, nanostructure approaches and current developments in biosensors using CNTs will be introduced in the first part. In the second part, the synthesis methods and up-to-date progress in CNT fibre biosensors will be reviewed. Finally, we briefly outline some exciting applications for CNT and CNT fibres which are being targeted. By harnessing the continual advancements in micro and nano- technology, the functionality and capability of CNT-based biosensors will be enhanced, thus expanding and enriching the possible applications that can be delivered by these devices. © 2012 Bentham Science Publishers. All rights reserved.

100 Gb/s uncooled WDM system using conventional WDM components and advanced receiver signal processing

We demonstrate an uncooled WDM system using standard WDM components and receiver signal processing, with a different number of receivers to transmitters, to allow wide temperature drift of the transmitter lasers. A 100 Gb/s 8-wavelength demonstrator has been developed, which proves the feasibility of the approach over 25 km of SMF. © 2012 OSA.

Designing and testing an advanced pneumatic braking system for heavy vehicles

Heavy goods vehicles exhibit poor braking performance in emergency situations when compared to other vehicles. Part of the problem is caused by sluggish pneumatic brake actuators, which limit the control bandwidth of their antilock braking systems. In addition, heuristic control algorithms are used that do not achieve the maximum braking force throughout the stop. In this article, a novel braking system is introduced for pneumatically braked heavy goods vehicles. The conventional brake actuators are improved by placing high-bandwidth, binary-actuated valves directly on the brake chambers. A made-for-purpose valve is described. It achieves a switching delay of 3-4 ms in tests, which is an order of magnitude faster than solenoids in conventional anti-lock braking systems. The heuristic braking control algorithms are replaced with a wheel slip regulator based on sliding mode control. The combined actuator and slip controller are shown to reduce stopping distances on smooth and rough, high friction (μ = 0.9) surfaces by 10% and 27% respectively in hardware-in-the-loop tests compared with conventional ABS. On smooth and rough, low friction (μ = 0.2) surfaces, stopping distances are reduced by 23% and 25%, respectively. Moreover, the overall air reservoir size required on a heavy goods vehicle is governed by its air usage during an anti-lock braking stop on a low friction, smooth surface. The 37% reduction in air usage observed in hardware-in-the-loop tests on this surface therefore represents the potential reduction in reservoir size that could be achieved by the new system. © 2012 IMechE.

100 Gb/s uncooled WDM system using conventional WDM components and advanced receiver signal processing

We demonstrate an uncooled WDM system using standard WDM components and receiver signal processing, with a different number of receivers to transmitters, to allow wide temperature drift of the transmitter lasers. A 100 Gb/s 8-wavelength demonstrator has been developed, which proves the feasibility of the approach over 25 km of SMF. © 2012 Optical Society of America.

Progress in the understanding of Ni silicide formation for advanced MOS structures

Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Advanced modeling of periodic structures in SEA

The SEA properties of a periodic structure are computed from the FE analysis of a single periodic cell. The periodic theory is used in conjunction with FE so that any geometry can be considered. Some efficient algorithms have been implemented to get the subsystems intrinsic properties (modal density, damping, and equivalent mass), as well as the coupling properties of the subsystem with acoustic subsystems (radiation and transmission). Comparisons with analytical results validate the method. © (2006) by the Katholieke Universiteit Leuven Department of Mechanical Engineering All rights reserved.

Atom probe tomography for advanced metallization

In microelectronics, the increase in complexity and the reduction of devices dimensions make essential the development of new characterization tools and methodologies. Indeed advanced characterization methods with very high spatial resolution are needed to analyze the redistribution at the nanoscale in devices and interconnections. The atom probe tomography has become an essential analysis to study materials at the nanometer scale. This instrument is the only analytical microscope capable to produce 3D maps of the distribution of the chemical species with an atomic resolution inside a material. This technique has benefit from several instrumental improvements during last years. In particular, the use of laser for the analysis of semiconductors and insulating materials offers new perspectives for characterization. The capability of APT to map out elements at the atomic scale with high sensitivity in devices meets the characterization requirements of semiconductor devices such as the determination of elemental distributions for each device region. In this paper, several examples will show how APT can be used to characterize and understand materials and process for advanced metallization. The possibilities and performances of APT (chemical analysis of all the elements, atomic resolution, planes determination, crystallographic information...) will be described as well as some of its limitations (sample preparation, complex evaporation, detection limit, ...). The examples illustrate different aspect of metallization: dopant profiling and clustering, metallic impurities segregation on dislocation, silicide formation and alloying, high K/metal gate optimization, SiGe quantum dots, as well as analysis of transistors and nanowires. © 2013 Elsevier B.V. All rights reserved.