Effect of syngas addition on lower alkene production by the oxidative cracking of hexane

The lower alkene production by the gas-phase oxidative cracking (GOC) or catalytic oxidative cracking (COC) of hexane (C6) with added syngas was investigated. The addition of syngas to the COC process could effectively enhance the selectivity to lower alkenes and decrease the selectivity to COx, because of the preferential reaction between O-2 with H-2 contained in the syngas, whereas it has little effect on the conversion of C6 and product distribution in the GOC process. The high selectivity to lower alkenes of 70% and low selectivity to CO, of 6% at C6 conversion of 66% were achieved over 0.1% Pt/MgAl2O4 catalyst. The COC process of C6 combined with the syngas in the feed could directly produce a gas mixture of lower alkenes, H-2, and CO, which usually is a suitable feedstock for the hydroformylation process.

Preparation of a novel polysulfone/polyethylene oxide/silicone rubber multilayer composite membrane for hydrogen-nitrogen separation

A novel poly sulfone/polyethylene oxide/silicone rubber (PSOPEO/SR) multilayer composite membrane was fabricated by double coating polysulfone substrate membrane with polyethylene oxide and silicone rubber. Gas permeation experiments were performed at 30 degrees C for hydrogen and nitrogen. PSf(PEO/SR membrane displayed high and steady performance for H-2/N-2: permeances of H-2 and N-2 of 49.51 and 0.601 GPU, respectively, and H-2/N-2 ideal separation factor of 82.3. It was explained that layer interfaces due to the introduction of PEO layer act as the permselective media and are responsible for the higher H-2/N-2 ideal separation factor which has exceeded the intrinsic permselectivities of the three polymers used in this study. (c) 2005 Elsevier B.V. All rights reserved.

Differences in growth and nitrogen productivity between a stay-green genotype and a wild-type of Lolium perenne under limiting relative addition rates of nitrate supply

James Macduff, Neil Raistrick and Mervyn Humphreys (2002). Differences in growth and nitrogen productivity between a stay-green genotype and a wild-type of Lolium perenne under limiting relative addition rates of nitrate supply. Physiologia Plantarum, 116 (1), 52-61. Sponsorship: BBSRC RAE2008

Direct Carbon-Carbon Bond Formation via Reductive Soft Enolization: A Kinetically Controlled syn-Aldol Addition of alpha-Halo Thioesters and Enolizable Aldehydes

The direct addition of enolizable aldehydes and a-halo thioesters to produce beta-hydroxy thioesters enabled by reductive soft enolization is reported. The transformation is operationally simple and efficient and has the unusual feature of giving high syn-selectivity, which is the opposite of that produced for (thio)esters under conventional conditions. Moreover, excellent diastereoselectivity results when a chiral nonracemic alpha-hydroxy aldehyde derivative is used.

Effect of 0.5 wt % Cu addition in Sn–3.5% Ag solder on the dissolution rate of Cu metallization

The dissolution of thin film under-bump-metallization (UBM) by molten solder has been one of the most serious processing problems in electronic packaging technology. Due to a higher melting temperature and a greater Sn content, a molten lead-free solder such as eutectic SnAg has a faster dissolution rate of thin film UBM than the eutectic SnPb. The work presented in this paper focuses on the role of 0.5 wt % Cu in the base Sn–3.5%Ag solder to reduce the dissolution of the Cu bond pad in ball grid array applications. We found that after 0.5 wt % Cu addition, the rate of dissolution of Cu in the molten Sn–3.5%Ag solder slows down dramatically. Systematic experimental work was carried out to understand the dissolution behavior of Cu by the molten Sn–3.5%Ag and Sn–3.5%Ag–0.5%Cu solders at 230–250 °C, for different time periods ranging from 1 to 10 min. From the curves of consumed Cu thickness, it was concluded that 0.5 wt % Cu addition actually reduces the concentration gradient at the Cu metallization/molten solder interface which reduces the driving force of dissolution. During the dissolution, excess Cu was found to precipitate out due to heterogeneous nucleation and growth of Cu6Sn5 at the solder melt/oxide interface. In turn, more Cu can be dissolved again. This process continues with time and leads to more dissolution of Cu from the bond pad than the amount expected from the solubility limit, but it occurs at a slower rate for the molten Sn–3.5%Ag–0.5%Cu solder. © 2003 American Institute of Physics.