DOCPAL resúmenes sobre población en América Latina: 91-001

Contiene resúmenes bibliográficos de documentos sobre población y temas relacionados que se producen en América Latina y el Caribe, publicados entre 1981-1984.

CARISPLAN Abstracts: 10-001

Publicado en agosto de 1985

CARISPLAN Abstracts: 11-001

Incluye Bibliografía

PLANINDEX: 61-001

Contiene resumenes bibliograficos de documentos sobre planificacion y desarrollo en America Latina, recogidos y procesados en el marco del Sistema de Informacion para la Planificacion en America Latina y el Caribe (INFOPLAN).

DOCPAL resúmenes sobre población en América Latina: 92-001

Contiene resúmenes bibliográficos de documentos sobre población y temas relacionados que se producen en América Latina y el Caribe, publicados entre 1981-1985.

DOCPAL resúmenes sobre población en América Latina: 101-001

Contiene resúmenes bibliográficos de documentos sobre población y temas relacionados que se producen en América Latina y el Caribe, publicados entre 1983-1985.

CEPALINDEX: resúmenes 8-001

Publicado en julio de 1986

PLANINDEX: 71-001

Contiene resumenes bibliograficos de documentos sobre planificacion y desarrollo en America Latina, recogidos y procesados en el marco del Sistema de Informacion para la Planificacion en America Latina y el Caribe (INFOPLAN).

DOCPAL resúmenes sobre población en América Latina: 102-001

Contiene resúmenes bibliográficos de documentos sobre población y temas relacionados que se producen en América Latina y el Caribe, publicados entre 1983-1986.

PLANINDEX: 72-001

Contiene resumenes bibliograficos de documentos sobre planificacion y desarrollo en America Latina, recogidos y procesados en el marco del Sistema de Informacion para la Planificacion en America Latina y el Caribe (INFOPLAN).

DOCPAL resúmenes sobre población en América Latina: 111-001

Contiene resúmenes bibliográficos de documentos sobre población y temas relacionados que se producen en América Latina y el Caribe, publicados entre 1984-1986.

CEPALINDEX: resúmenes 9-001

Publicado en mayo de 1987

PLANINDEX: 81-001

Contiene resumenes bibliograficos de documentos sobre planificacion y desarrollo en America Latina, recogidos y procesados en el marco del Sistema de Informacion para la Planificacion en America Latina y el Caribe (INFOPLAN).

Hydrostatic and [001] uniaxial pressure on anatase TiO2 by periodic B3LYP-D* calculations

The effect of high hydrostatic and [001] uniaxial pressures on TiO 2 anatase was studied under the framework of periodic calculations with the inclusion of DFT-D2 dispersion potential adjusted for this system (B3LYP-D*). The role of dispersion in distorted unit cells was evaluated in terms of lattice parameters, elastic constants, equation of state, vibrational properties, and electronic properties (band structure and density of states). A more reliable description at high pressures was achieved because the B3LYP-D* presented an improvement in all properties for undistorted bulk over conventional B3LYP and B3LYP-D. From density of states analysis, we observed that the contribution of crystalline orbitals to the edge of valence and conduction bands changed within applied pressure. The studied distortions can give some insight into behavior of electronic and structural properties due to local stress in anatase bulk from doping, defects, and physical tensions in nanometric forms. © 2013 American Chemical Society.

Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.