986 resultados para (a) Partly escaped from laser sooting


Relevância:

40.00% 40.00%

Publicador:

Resumo:

The generation of picosecond superradiant pulses from 408nm a GaN/InGaN laser diode is demonstrated for the first time. Pulses with peak powers above 2.8W, pulse energy of 57pJ and durations of 1.4ps are generated. © 2012 OSA.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

We fabricate a saturable absorber mirror by coating a graphenefilm on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode-pumped linear cavity channel waveguide laser inscribed in Ytterbium-doped Bismuthate Glass. The laser produces 1.06 ps pulses at ∼1039 nm, with a 1.5 GHz repetition rate, 48% slope efficiency and 202 mW average output power. This performance is due to the combination of the graphene saturable absorber and the high quality optical waveguides in the laser glass. © 2013 Optical Society of America.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

A new dynamic regime in a multisegmented AlGaAs/GaAs DH injection laser has been realised. Generation of bandwidth-limited 100 GHz repetition rate pulses has been demonstrated. This value is claimed to be the largest ever reported for an ultrashort pulse repetition frequency obtained directly from a laser.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated. © 2013 The Optical Society.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

A packaged 10GHz monolithic two-section quantum-dot mode-locked laser is presented, with record narrow 500Hz RF electrical linewidth for passive mode-locking. Single sideband noise spectra show 147fs integrated timing jitter over the 4MHz-80MHz frequency range. © 2009 Optical Society of America.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Pulse generation from a mode-locked single-section 1.55μm quantum-dash FP laser is demonstrated under continuous-wave operation. A 270GHz, 580fs pulse train is achieved by applying frequency multiplication using fiber dispersion. ©2009 Optical Society of America.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

During the twentieth century evidence was presented which suggested the presence of various strains and races of the parasite Ichthyophthirius multifiliis Fouquet. However, ecological profiles of various parasite isolates from different climatic zones are sparse. Such stringent characterizations of parasite development at defined abiotic conditions could provide valuable criteria for the different races: profile comparison from various localities is one way to differentiate these strains. Baseline investigations were therefore performed on the associations between abiotic factors (temperature/salinity) and the development of theronts in tomocysts of I. multifiliis isolated from rainbow trout in a Danish trout farm. It was shown that tomocyst formation and theront development took place between 5 and 30degreesC. Development rates and sizes of theronts were clearly affected by temperature: theronts escaped tomocysts already after 16-27 h at 25degreesC and 30degreesC, whereas this process took 8-9 days at 5degreesC. Likewise, theront size decreased steadily from a maximum of 57.4 x 28.6 mum at 5degreesC to 28.6 x 20.0 mum at 30degreesC. This size variation was only partly associated with the number of theronts that appeared at different temperatures. The lowest number of theronts escaping from one tomocyst was indeed found at 5-7degreesC (mean 329-413). At 11.6, 17.0 and 21degreesC. the highest number of theronts appeared (mean 546-642). However, at 25 and 30degreesC, the number decreased (458 and 424, respectively). Additional studies on the salinity dependent development of the parasite (at 11.6degreesC) showed that salinities above 5 p.p.t. totally inhibited development. Even at 5 p.p.t. the developmental time significantly increased and the number of theronts produced from one tomocyst decreased.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Variations in optical spectrum and modulation band-width of a modulated Fabry-Perot (FP) semiconductor laser subject to the external light injection from another FP Laser is investigated in this paper. Optimal wavelength matching conditions for two FP lasers are discussed. A series of experiments show that two FP lasers should have a central wavelength overlapping and a mode spacing difference of several gigahertz. Under these conditions both the magnitude and phase frequency responses can be improved significantly.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

A novel method for characterizing the parasitics of parasitic network is proposed based on the relations between the scattering parameters of a semiconductor laser chip and laser diode. Experiments are designed and performed using our method. The analysis results are in good agreement with the measurements. Furthermore, how the parasitics change with the parasitic element values are investigated. The method only needs reflection coefficient of laser diode to be measured, which is simple because of the developed electrical-domain measurement techniques. 2007 Wiley Periodicals, Inc.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emit in the yellow. The InGaN laser diode was coupled to an optical fiber firstly and the phosphor was excited by the laser light output from the fiber. At 350 mA injection current the luminous flux and the luminous efficacy was 73 lm and 42.7 lm/W, respectively. The luminance was estimated to be 50 cd/mm(2). The relationship of the luminous flux and the luminous efficacy of the white light with injection current were measured and discussed.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

Confinement factor and absorption loss of AlInGaN based multiquantum well laser diodes (LDs) were investigated by numerical simulation based on a two-dimensional waveguide model. The simulation results indicate that an increased ridge height of the waveguide structure can enhance the lateral optical confinement and reduce the threshold current. For 405 nm violet LDs, the effects of p-AlGaN cladding layer composition and thickness on confinement factor and absorption loss were analyzed. The experimental results are in good agreement with the simulation analysis. Compared to violet LD, the confinement factors of 450 nm blue LD and 530 nm green LD were much lower. Using InGaN as waveguide layers that has higher refractive index than GaN will effectively enhance the optical confinement for blue and green LDs. The LDs based on nonpolar substrate allow for thick well layers and will increase the confinement factor several times. Furthermore, the confinement factor is less sensitive to alloys composition of waveguide and cladding layers, being an advantage especially important for ultraviolet and green LDs.