1000 resultados para optical bistability


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The optical bistability occurring in laser diode amplifiers is used to design an all-optical logic gate capable to provide the whole set of logic functions. The structure of the reported logic gate is based on two connected 1550nm laser amplifiers (Fabry-Perot and distributed feedback laser amplifiers).

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In this paper, the optical behavior of a nonlinear interface is studied. The nonlinear medium has been a nematic liquid crystal, namely MBBA, and the nonlinear one, glasses of different types (F-10 and F-2) depending on the experimental needs. The anchoring forces at the boundary have been found to inhibit the action of the evanescent field in the case of total internal reflection. Most of observed nonlinearities are due to thermal effects. As a consequence, liquid crystals do not seem to be good candidates for total internal reflection optical bistability.

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Optical instabilities in the output light from a bistable optical device (BOD) with a delayed feedback was predicted by Ikeda [1]. Gibbs et al. [2] gave the first experimental verification of this type of instabilities. From that time several groups have studied the instabilities of the BOD for different relations between the delay time tR and the time constant ح of the system. In a previous paper [3] an empirical and analytical study of instabilities in hybrid BOD was reported by us. The employed set up is shown in Fig. 1.

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A design for obtaining memory in optical bistability with liquid crystals is reported. This design uses optical feedback on a twisted nematie liquid crystal ( TNLC ) through an optoelectronic system. A constant input light is the read-out and its value depends on the desired initial working point, usually at the bottom of the T(V) vs. V curve. Light levels depend on the feedback. An input light pulse change the working point to the top of the transmission curve. When this pulse vanishes, the working point remains at the upper part of the curve. Hence a memory function is obtained. Minimum pulse width needed was 1msec. ON-OPF ratio was 100:3.

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The nonlinear optical properties of many materials and devices have been the main object of research as potential candidates for sensing in different places. Just one of these properties has been, in most of the cases, the basis for the sensing operation. As a consequence, just one parameter can be detected. In this paper, although just one property will be employed too, we will show the possibility to sense different parameters with just one type of sensor. The way adopted in this work is the use of the optical bistability obtained from different photonic structures. Because this optical bistability has a strong dependence on many different parameters the possibility to sense different inputs appears. In our case, we will report the use of some non-linear optical devices, mainly Semiconductor Optical Amplifiers, as sensing elements. Because their outputs depend on many parameters, as the incident light wavelength, polarization, intensity and direction, applied voltage and feedback characteristics, they can be employed to detect, at the same time, different type of signals. This is because the way these different signals affect to the sensor response is very different too and appears under a different set of characteristics.

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During the past years a great interest has been devoted to the study of possible applications of non-linear interfaces, mainly in the field of Optical Bistability. Several papers have been published in this field, and some of them dealing with liquid crystals as non-linear material.

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As it is well known from the work by Gibbs et al., optical turbulence and periodic oscillations are easily seen in hybrid optical bistable devices when a delay is added to the feedback. Such effects, as it was pointed out by Gibbs, may be used to convert cw laser power into a train of light pulses.

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In this paper we describe a twisted nematic liquid crystal (TNLC) device structure with optical feedback capable of bistable operation and optical memory. Its structure is the conventional one as employed in hybrid optical bistability.

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Semiconductor Optical Amplifiers (SOAs) have mainly found application in optical telecommunication networks for optical signal regeneration, wavelength switching or wavelength conversion. The objective of this paper is to report the use of semiconductor optical amplifiers for optical sensing taking into account their optical bistable properties. As it was previously reported, some semiconductor optical amplifiers, including Fabry-Perot and Distributed-Feedback Semiconductor Optical Amplifiers (FPSOAs and DFBSOAs), may exhibit optical bistability. The characteristics of the attained optical bistability in this kind of devices are strongly dependent on different parameters including wavelength, temperature or applied bias current and small variations lead to a change on their bistable properties. As in previous analyses for Fabry-Perot and DFB SOAs, the variations of these parameters and their possible application for optical sensing are reported in this paper for the case of the Vertical-Cavity Semiconductor Optical Amplifier (VCSOA). When using a VCSOA, the input power needed for the appearance of optical bistability is one order of magnitude lower than that needed in edge-emitting devices. This feature, added to the low manufacturing costs of VCSOAs and the ease to integrate them in 2-D arrays, makes the VCSOA a very promising device for its potential use in optical sensing applications.

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In this paper will be identify some fundamental mechanisms concerning optical bistability in some active devices.

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Coherent population accumulations of multiphoton transitions induced by an ultrashort pulse train in a two-level polar molecule are investigated theoretically by solving the density-matrix equations without invoking any of the standard approximations. It is shown due to the effects of permanent dipole moments, that the population accumulation of multiphoton transitions can be obtained in the polar molecule. Moreover, the population accumulations depend crucially on the relative phase between two sequential pulses, and the period in which the maximum population accumulation occurs is 2 pi/N in N-photon transitions.

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The generation of attosecond pulses in a two-level system with permanent dipole moment is investigated. It is shown due to the presence of permanent dipole moments, that the plateau of the high-order harmonic generation spectrum can be extended to X-ray range. Moreover, attosecond pulses with higher intensity can be synthesized by using both even and odd harmonics because of their quantum interference. (c) 2006 Elsevier B.V. All rights reserved.

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Silicon is known to be a very good material for the realization of high-Q, low-volume photonic cavities, but at the same it is usually considered as a poor material for nonlinear optical functionalities like second-harmonic generation, because its second-order nonlinear susceptibility vanishes in the dipole approximation. In this work we demonstrate that nonlinear optical effects in silicon nanocavities can be strongly enhanced and even become macroscopically observable. We employ photonic crystal nanocavities in silicon membranes that are optimized simultaneously for high quality factor and efficient coupling to an incoming beam in the far field. Using a low-power, continuous-wave laser at telecommunication wavelengths as a pump beam, we demonstrate simultaneous generation of second- and third harmonics in the visible region, which can be observed with a simple camera. The results are in good agreement with a theoretical model that treats third-harmonic generation as a bulk effect in the cavity region, and second-harmonic generation as a surface effect arising from the vertical hole sidewalls. Optical bistability is also observed in the silicon nanocavities and its physical mechanisms (optical, due to two-photon generation of free carriers, as well as thermal) are investigated. © 2011 IEEE.

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Mode competitions between modes with different output coupling efficiencies can result in optical bistability under certain asymmetric nonlinear gain. For a GaInAsP/InP equilateral triangle microlaser with the side length of 10 mu m, the drop of the output power with the increase of the injection current is observed corresponding to transverse mode transitions. Furthermore, the measured laser spectra up to 270 K show that lasing modes coexist with the wavelength interval of 39 nm at 240 K. The emission at 5.2 THz can be expected by the mode frequency beating with the 39 nm interval.

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Glasses in the system xGeO(2)-(1-x)NaPO3 (0 <= x <= 0.50) were prepared by conventional melting quenching and characterized by thermal analysis, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and P-31 nuclear magnetic resonance (MAS NMR) techniques. The deconvolution of the latter spectra was aided by homonuclear J-resolved and refocused INADEQUATE techniques. The combined analyses of P-31 MAS NMR and O-1s XPS lineshapes, taking charge and mass balance considerations into account, yield the detailed quantitative speciations of the phosphorus, germanium, and oxygen atoms and their respective connectivities. An internally consistent description is possible without invoking the formation of higher-coordinated germanium species in these glasses, in agreement with experimental evidence in the literature. The structure can be regarded, to a first approximation, as a network consisting of P-(2) and P-(3) tetrahedra linked via four-coordinate germanium. As implied by the appearance of P-(3) units, there is a moderate extent of network modifier sharing between phosphate and germanate network formers, as expressed by the formal melt reaction P-(2) + Ge-(4) -> P-(3) + Ge-(3). The equilibrium constant of this reaction is estimated as K = 0.52 +/- 0.11, indicating a preferential attraction of network modifier by the phosphorus component. These conclusions are qualitatively supported by Raman spectroscopy as well as P-31{Na-23} and P-31{Na-23} rotational echo double resonance (REDOR) NMR results. The combined interpretation of O-1s XPS and P-31 MAS NMR spectra shows further that there are clear deviations from a random connectivity scenario: heteroatomic P-O-Ge linkages are favored over homoatomic P-O-P and Ge-O-Ge linkages.