Oberflächenstrukturierte amphiphile Polyphenylendendrimere zur Imitation natürlicher Transportproteine

In dieser Arbeit werden formstabile, amphiphile, oberflächenstrukturierte Polyphenylendendrimere (PPDs) mit verschiedenen Oberflächenpolaritäten beschrieben. Die physikalisch-chemischen Eigenschaften dieser Makromoleküle wurden studiert, welche ein gutes Verständnis der Nanoumgebung amphiphiler PPDs lieferten. Auch lichtinduzierte Polaritätsänderung wurde untersucht. Mit dem Konzept einer gleichmäßigen Verteilung polarer Bereiche auf der Peripherie hydrophober PPPs gelang es, Transportsysteme für Fettsäuren und Zytostatika zu erzeugen, welche charakteristische Merkmale natürlicher Transportproteine wie Albumin in sich vereinen. Hierzu zählen eine stabile dreidimensionale Form, die Ausbildung von Bindungstaschen sowie eine definierte strukturierte Oberfläche aus hydrophilen und hydrophoben Bereichen. Die Verfügbarkeit von lipophilen Bindungstaschen übertrifft sogar die des Albumins. Im Gegensatz zu Polymeren kann die Wirkstoffaufnahme bei PPDs exakt bestimmt werden. Die Anpassung der peripheren Gruppen beeinflusst den zellulären Aufnahmemechanismus. Es konnten effiziente Zellaufnahmen in A549-Zellen sowie der Transport und die intrazelluläre Freisetzung von Doxorubicin erreicht werden. Manche PPDs bieten eine Größe und Architektur, die es ermöglicht, Endothelzellen des Gehirns zu durchdringen. Es wurde auch der andere Extremfall untersucht, indem alle polaren Gruppen auf einer Hemisphäre akkumuliert wurden. Zur Darstellung solcher Janus-Dendrimere wurde ein neues Synthesekonzept herausgearbeitet und die erhaltenen Janus-Dendrimere mittels Lichtstreuung untersucht, wobei definierte perlenschnurartige Aggregate gefunden wurden. Weiterhin wurden semifluorierte Amphiphile vorgestellt, welche die Möglichkeit zur Selbstorganisation durch Nanophasenseparation bieten.

Thermoelectric performance of p-type TiCoSb half-Heusler compounds - Intrinsic phase separation and charge carrier concentration optimization as key to high efficiency

The world's rising demand of energy turns the development of sustainable and more efficient technologies for energy production and storage into an inevitable task. Thermoelectric generators, composed of pairs of n-type and p-type semiconducting materials, di¬rectly transform waste heat into useful electricity. The efficiency of a thermoelectric mate¬rial depends on its electronic and lattice properties, summarized in its figure of merit ZT. Desirable are high electrical conductivity and Seebeck coefficients, and low thermal con¬ductivity. Half-Heusler materials are very promising candidates for thermoelectric applications in the medium¬ temperature range such as in industrial and automotive waste heat recovery. The advantage of Heusler compounds are excellent electronic properties and high thermal and mechanical stability, as well as their low toxicity and elemental abundance. Thus, the main obstacle to further enhance their thermoelectric performance is their relatively high thermal conductivity.rn rnIn this work, the thermoelectric properties of the p-type material (Ti/Zr/Hf)CoSb1-xSnx were optimized in a multistep process. The concept of an intrinsic phase separation has recently become a focus of research in the compatible n-type (Ti/Zr/Hf)NiSn system to achieve low thermal conductivities and boost the TE performance. This concept is successfully transferred to the TiCoSb system. The phase separation approach can form a significant alternative to the previous nanostructuring approach via ball milling and hot pressing, saving pro¬cessing time, energy consumption and increasing the thermoelectric efficiency. A fundamental concept to tune the performance of thermoelectric materials is charge carrier concentration optimization. The optimum carrier concentration is reached with a substitution level for Sn of x = 0.15, enhancing the ZT about 40% compared to previous state-of-the-art samples with x = 0.2. The TE performance can be enhanced further by a fine-tuning of the Ti-to-Hf ratio. A correlation of the microstructure and the thermoelectric properties is observed and a record figure of merit ZT = 1.2 at 710°C was reached with the composition Ti0.25Hf0.75CoSb0.85Sn0.15.rnTowards application, the long term stability of the material under actual conditions of operation are an important issue. The impact of such a heat treatment on the structural and thermoelectric properties is investigated. Particularly, the best and most reliable performance is achieved in Ti0.5Hf0.5CoSb0.85Sn0.15, which reached a maximum ZT of 1.1 at 700°C. The intrinsic phase separation and resulting microstructure is stable even after 500 heating and cooling cycles.

Thermoelektrische und strukturelle Eigenschaften gefüllter Skutterudite, sowie Verbesserung ihres Gütefaktors durch Nanostrukturierung

Gefüllte Skutterudite mit der Summenformel MxCo4Sb12 sind vielversprechende thermoelektrische Materialien. Die Standardsynthese führt jedoch oft zur Bildung von MSbx, Sb, CoSb oder CoSb2 als Nebenphasen. In dieser Arbeit wird eine neue zweistufige Synthese vorgestellt, bei der die Bildung des Kieftits (CoSb3) getrennt von dem topotaktischen Füllen mit dem Metallatom M erfolgt. Dieser Ansatz erlaubt eine Durchführung der Reaktion bei niedrigeren Temperaturen mit kürzeren Reaktionszeiten. Ein geringer Antimon-Unterschuss im so erhaltenen Kieftit erhöht die Anzahl der Ladungsträger und unterdrückt die Bildung von Verunreinigungsphasen. Zunächst wurden Skutteruditproben mit der nominellen Zusammensetzung InxCo4Sb12 mit x = 0,12; 0,15; 0,18 und 0,20 in hoher Reinheit hergestellt und mit Spark Plasma Sintering (SPS) kompaktiert. Messaufnahmen mit Potential- und Seebeck-Mikrosonde und Rasterelektronenmikroskop zeigten eine hohe Probenhomogenität. Produkte waren nahezu phasenrein, was eine Untersuchung der Transporteigenschaften ohne Verfälschung durch Nebenphasen ermöglichte. Die quantitative Phasenanalyse mittels Synchrotron-Beugungsdaten zeigte < 0,1 % InSb bei In0,18Co4Sb12 und In0,20Co4Sb12, sowie eine lineare Korrelation zwischen dem wahren Füllgrad und der Gitterkonstante. Die Bindung von < 0,1 % InSb verringerte den Füllgrad der nominellen In0,20Co4Sb12-Probe auf x = 0,144. Die nominelle In0,18Co4Sb12-Probe mit dem wahren Gehalt x = 0,160 hatte den höchsten zT-Wert nahe eins bei 420 °C. Es konnte anschließend die Anwendbarkeit der Synthesemethode für Barium- und mehrfach gefüllte (Na+In) Skutterudite gezeigt werden. Die Na-gefüllte Probe war gegenüber der thermischen Behandlung in der SPS oder der Charakterisierung instabil. Alle Verbindungen wurden gesintert und ihre Transporteigenschaften wurden charakterisiert. Des weiterem wurde der Einfluss der Konzentration der Korngrenzen bei den Mischungen von zu Nanomaßstab vermahlenem In0,18Co4Sb12 (Partikelgrößen zwischen 20 und 100 nm) mit dem ursprünglichen Bulk untersucht. Proben mit verschiedenen Anteilen von Nanopulver wurden gesintert, ihre thermoelektrischen und strukturellen Eigenschaften wurden untersucht. Die Gütezahl zT von 1,39 bei 375 °C wurde bei der Probe mit gleichen Anteilen des Nano- und des unbehandelten Pulvers erreicht. Die Komposite mit Anteilen <10 % oder >75 % des Nanopulvers zeigten keine Verbesserung gegenüber der unbehandelten Verbindung.rn

Solvothermal Synthesis, Structure and Optical Property of Nanosized CoSb3 Skutterudite

Binary skutterudite CoSb3 nanoparticles were synthesized by solvothermal method. The nanostructuring of CoSb3 material was achieved by the inclusion of various kinds of additives. X-ray diffraction examination indicated the formation of the cubic phase of CoSb3. Structural analysis by transmission electron microscopy analysis further confirmed the formation of crystalline CoSb3 nanoparticles with high purity. With the assistance of additives, CoSb3nanoparticles with size as small as 10 nm were obtained. The effect of the nanostructure of CoSb3on the UV–visible absorption and luminescence was studied. The nanosized CoSb3 skutterudite may find application in developing thermoelectric devices with better efficiency. K

Structure, Morphology, and Electrochemical Properties of Transition Metal Oxide, Hydroxide, and Phosphate Nanomaterials for Energy Storage

Energy storage technologies are crucial for efficient utilization of electricity. Supercapacitors and rechargeable batteries are of currently available energy storage systems. Transition metal oxides, hydroxides, and phosphates are the most intensely investigated electrode materials for supercapacitors and rechargeable batteries due to their high theoretical charge storage capacities resulted from reversible electrochemical reactions. Their insulating nature, however, causes sluggish electron transport kinetics within these electrode materials, hindering them from reaching the theoretical maximum. The conductivity of these transition metal based-electrode materials can be improved through three main approaches; nanostructuring, chemical substitution, and introducing carbon matrices. These approaches often lead to unique electrochemical properties when combined and balanced.

Ethanol-mediated solvothermal synthesis we developed is found to be highly effective for controlling size and morphology of transition metal-based electrode materials for both pseudocapacitors and batteries. The morphology and the degree of crystallinity of nickel hydroxide are systematically changed by adding various amounts glucose to the solvothermal synthesis. Nickel hydroxide produced in this manner exhibited increased pseudocapacitance, which is partially attributed to the increased surface area. Interestingly, this morphology effect on cobalt doped-nickel hydroxide is found to be more effective at low cobalt contents than at high cobalt contents in terms of improving the electrochemical performance.

Moreover, a thin layer of densely packed nickel oxide flakes on carbon paper substrate was successfully prepared via the glucose-assisted solvothermal synthesis, resulting in the improved electrode conductivity. When reduced graphene oxide was used for conductive coating on as-prepared nickel oxide electrode, the electrode conductivity was only slightly improved. This finding reveals that the influence of reduced graphene oxide coating, increasing the electrode conductivity, is not that obvious when the electrode is already highly conductive to begin with.

We were able to successfully control the interlayer spacing and reduce the particle size of layered titanium hydrogeno phosphate material using our ethanol-mediated solvothermal reaction. In layered structure, interlayer spacing is the key parameter for fast ion diffusion kinetics. The nanosized layered structure prepared via our method, however, exhibited high sodium-ion storage capacity regardless of the interlayer spacing, implying that interlayer space may not be the primary factor for sodium-ion diffusion in nanostructured materials, where many interstitials are available for sodium-ion diffusion.

Our ethanol-mediated solvothermal reaction was also effective for synthesis of NaTi2(PO4)3 nanoparticles with uniform size and morphology, well connected by a carbon nanotube network. This composite electrode exhibited high capacity, which is comparable to that in aqueous electrolyte, probably due to the uniform morphology and size where the preferable surface for sodium-ion diffusion is always available in all individual particles.

Fundamental understandings of the relationship between electrode microstructures and electrochemical properties discussed in this dissertation will be important to design high performance energy storage system applications.

Less strain, more gain_nano_patterning III-N thin films

Controlling the growth mechanism for nano-structures is one of the most critical topics in material science. In the past 10 years there has been intensive research worldwide in IIIN based nanowires for its many unique photonic and electrical properties at this scale. There are several advantages to nanostructuring III-N materials, including increased light extraction, increased device efficiency, reduction of efficiency droop, and reduction in crystallographic defect density. High defect densities that normally plague III-N materials and reduce the device efficiency are not an issue for nano-structured devices such as LEDs, due to the effective strain relaxation. Additionally regions of the light spectrum such as green and yellow, once found difficult to achieve in bulk planar LEDs, can be produced by manipulating the confinement and crystal facet growth directions of the active regions. A cheap and easily repeatable self-assembly nano-patterning technique at wafer scale was designed during this thesis for top down production of III-N nanowires. Through annealing under ammonia and N2 gas flow, the first reported dislocation defect bending was observed in III-N nanorods by in-situ transmission electron microscopy heating. By growing on these etched top down nanorods as a template, ultra-dense nanowires with apex tipped semi-polar tops were produced. The uniform spacing of 5nm between each wire is the highest reported space-filling factor at 98%. Finally by using these ultra-dense nanorods bridging the green gap of the light spectrum was possible, producing the first reported red, yellow, green light emission from a single nano-tip.

Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures

Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g (2)(0)≃ 0.01 of the exciton emission. Here, we focus on the influence of the initial hole depth on the QD optical properties with the goal to create deep holes suited for filling with more complex nanostructures like quantum dot molecules (QDM). The depth of droplet etched nanoholes is controlled by the droplet material coverage and the process temperature, where a higher coverage or temperature yields deeper holes. The requirements of high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits to the process temperature. At high temperatures, the hole depths become inhomogeneous and the linewidth rapidly increases beyond 640 °C. With the present process technique, we identify an upper limit of 40-nm hole depth if the linewidth has to remain below 100 μeV. Furthermore, we study the exciton fine-structure splitting which is increased from 4.6 μeV in 15-nm-deep to 7.9 μeV in 35-nm-deep holes. As an example for the functionalization of deep nanoholes, self-aligned vertically stacked GaAs QD pairs are fabricated by filling of holes with 35 nm depth. Exciton peaks from stacked dots show linewidths below 100 μeV which is close to that from single QDs.

Synthesis and Characterization of Nanostructured Electro-active Materials

Thesis (Ph.D.)--University of Washington, 2016-08

Self-healing thermal annealing: surface morphological restructuring control of GaN nanorods

With advances in nanolithography and dry etching, top-down methods of nanostructuring have become a widely used tool for improving the efficiency of optoelectronics. These nano dimensions can offer various benefits to the device performance in terms of light extraction and efficiency, but often at the expense of emission color quality. Broadening of the target emission peak and unwanted yellow luminescence are characteristic defect-related effects due to the ion beam etching damage, particularly for III–N based materials. In this article we focus on GaN based nanorods, showing that through thermal annealing the surface roughness and deformities of the crystal structure can be “self-healed”. Correlative electron microscopy and atomic force microscopy show the change from spherical nanorods to faceted hexagonal structures, revealing the temperature-dependent surface morphology faceting evolution. The faceted nanorods were shown to be strain- and defect-free by cathodoluminescence hyperspectral imaging, micro-Raman, and transmission electron microscopy (TEM). In-situ TEM thermal annealing experiments allowed for real time observation of dislocation movements and surface restructuring observed in ex-situ annealing TEM sampling. This thermal annealing investigation gives new insight into the redistribution path of GaN material and dislocation movement post growth, allowing for improved understanding and in turn advances in optoelectronic device processing of compound semiconductors.