Membrane-bound state of the colicin E1 channel domain as an extended two-dimensional helical array

Atomic level structures have been determined for the soluble forms of several colicins and toxins, but the structural changes that occur after membrane binding have not been well characterized. Changes occurring in the transition from the soluble to membrane-bound state of the C-terminal 190-residue channel polypeptide of colicin E1 (P190) bound to anionic membranes are described. In the membrane-bound state, the α-helical content increases from 60–64% to 80–90%, with a concomitant increase in the average length of the helical segments from 12 to 16 or 17 residues, close to the length required to span the membrane bilayer in the open channel state. The average distance between helical segments is increased and interhelix interactions are weakened, as shown by a major loss of tertiary structure interactions, decreased efficiency of fluorescence resonance energy transfer from an energy donor on helix V of P190 to an acceptor on helix IX, and decreased resonance energy transfer at higher temperatures, not observed in soluble P190, implying freedom of motion of helical segments. Weaker interactions are also shown by a calorimetric thermal transition of low cooperativity, and the extended nature of the helical array is shown by a 3- to 4-fold increase in the average area subtended per molecule to 4,200 Å2 on the membrane surface. The latter, with analysis of the heat capacity changes, implies the absence of a developed hydrophobic core in the membrane-bound P190. The membrane interfacial layer thus serves to promote formation of a highly helical extended two-dimensional flexible net. The properties of the membrane-bound state of the colicin channel domain (i.e., hydrophobic anchor, lengthened and loosely coupled α-helices, and close association with the membrane interfacial layer) are plausible structural features for the state that is a prerequisite for voltage gating, formation of transmembrane helices, and channel opening.

Bound state vector solitons with locked and precessing states of polarization

We report experimental observation of new tightly and loosely bound state vector solitons with locked and precessing states of polarization in a carbon nanotube mode locked fiber laser in the anomalous dispersion regime. ©2013 Optical Society of America.

Polarization dynamics of bound state solitons in a carbon nanotubes mode locked erbium doped fiber laser

Optical solitons are important in the modern photonics. Passively mode locked erbium doped fiber lasers provide a neat platform to study soliton dynamics. Soliton interaction dynamics is important for various applications and has quite different manifestations, including e.g. such as bound state solitons [1], soliton rains [2]. Soliton interactions have been observed with different mode locking approaches such as figure-of-eight [3] and nonlinear polarization rotation [4]. Carbon nanotubes (CNT) have recently been widely applied as an efficient saturable absorber for passively mode locked fiber lasers. We have recently studied the polarization dynamics in a CNT mode locked vector soliton erbium doped fiber laser [5]. So far, the polarization dynamics of bound state solitons have yet to be investigated. In this report, we present a wide range of polarization dynamics of bound state solitons generated in a CNT mode locked erbium doped fiber laser. The fiber laser consists of ∼ 2 m highly doped erbium fiber (Liekki Er80-8/125) as the gain medium, an optical isolator to ensure unidirectional oscillation anda 980 nm laser diode is used to pump the gain through the 1550/980 nm wavelength division multiplexer. A fused 10:90 coupler is used to couple 10 % of the light out of the laser cavity and two in-line polarization controllers (NewPort) are used to control the birefringence of the cavity and polarization of the pump light respectively. The total cavity length is ∼ 7.8 m indicating a 25.7 MHz fundamental repetition rate. © 2013 IEEE.

Two-magnon bound state causes ultrafast thermally induced magnetisation switching

There has been much interest recently in the discovery of thermally induced magnetisation switching using femtosecond laser excitation, where a ferrimagnetic system can be switched deterministically without an applied magnetic field. Experimental results suggest that the reversal occurs due to intrinsic material properties, but so far the microscopic mechanism responsible for reversal has not been identified. Using computational and analytic methods we show that the switching is caused by the excitation of two-magnon bound states, the properties of which are dependent on material factors. This discovery allows us to accurately predict the onset of switching and the identification of this mechanism will allow new classes of materials to be identified or designed for memory devices in the THz regime.

Effects of external magnetic field on the effective g factor of (Ga,Mn)As

With the help of time resolved magneto-optic Kerr rotation measurements, the optically induced spin precession in heavily doped diluted magnetic semiconductor Ga0.937Mn0.063 As was observed. It was found that the effective g factor increases with increasing magnetic field, which is attributed to the magnetic-field-induced increase of the density of the non-localized holes. Those free holes will couple with the localized magnetic ions by p-d interactions, leading to the formation of spontaneous magnetization in Ga0.937Mn0.063As, which in turn to the enhancement of the effective g factor.

Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As

Time resolved magneto-optic Kerr rotation measurements of optically induced spin quantum beats are performed on heavily doped bulk (Ga,Mn)As diluted magnetic semiconductors (DMS). An effective g-factor of about 0.2-0.3 over a wide range of temperature for both as-grown and annealed (Ga,Mn)As samples is obtained. A larger effective g-factor at lower temperature and an increase of the spin relaxation with increasing in-plane magnetic field are observed and attributed to the stronger p-d exchange interaction between holes and the localized magnetic ion spins, leading to a larger Zeeman splitting and heavy-hole-light-hole mixing. An abnormal dip structure of the g-factor in the vicinity of the Curie temperature suggests that the mean-field model is insufficient to describe the interactions and dynamics of spins in DMS because it neglects the short-range spin correlation effect. (c) 2008 American Institute of Physics.

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS by molecular beam epitaxy have been investigated using photoluminescence (PL), capacitance-voltage (C-V), and deep level transient Fourier spectroscopy (DLTFS) techniques. The temperature dependence of the free exciton emission was employed to clarify the mechanism of the PL thermal quenching processes in the ZnSe QDs. The PL experimental data are well explained by a two-step quenching process. The C-V and DLTFS techniques were used to obtain the quantitative information on the electron thermal emission from the ZnSe QDs. The correlation between the measured electron emission from the ZnSe QDs in the DLTFS and the observed electron accumulation in the C-V measurements was clearly demonstrated. The emission energy for the ground state of the ZnSe QDs was determined to be at about 120 meV below the conduction band edge of the ZnS barrier, which is in good agreement with the thermal activation energy, 130 meV, obtained by fitting the thermal quenching process of the free exciton PL peak. (C) 2003 American Institute of Physics.

Shubnikov de Haas oscillations in double wells with opposite signs of the electronic g-factor

We report on the measurements of the Shubnikov de Haas oscillations (SdH) in symmetrically doped AlxGa1-xAs double wells with different Al compositions in wells, which lead to the opposite signs of the electronic g-factor in each layer. Surprisingly, the spin splitting appears and collapses several times with increase in the magnetic field, We attribute such behaviour to the oscillations of the exchange-correlation term with Landau filling factor. (C) 2007 Elsevier B.V. All rights reserved.

VALLEY SPLITTING AND g-FACTOR IN AlAs QUANTUM WELLS

Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Lande g-factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g-factor.

Solutions of the bound-state Faddeev-Yakubovsky equations in three dimensions by using NN and 3N potential models

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)