995 resultados para diffraction-limit


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远场光学显微镜受衍射极限分辩率的限制,而近场光学显微镜由于缺乏层析能力,则无法实现超分辨的三维成像,研究了既可突破远场光学显微术的衍射极限分辨率又可实现三维成像的成像技术——受激发射损耗(STED),综述了STED的分辨率与STED光的光强,延迟时间、光斑空间分布等主要参数的关系,以及该技术的最新进展和应用前景。

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With the size of transistors approaching the sub-nanometer scale and Si-based photonics pinned at the micrometer scale due to the diffraction limit of light, we are unable to easily integrate the high transfer speeds of this comparably bulky technology with the increasingly smaller architecture of state-of-the-art processors. However, we find that we can bridge the gap between these two technologies by directly coupling electrons to photons through the use of dispersive metals in optics. Doing so allows us to access the surface electromagnetic wave excitations that arise at a metal/dielectric interface, a feature which both confines and enhances light in subwavelength dimensions - two promising characteristics for the development of integrated chip technology. This platform is known as plasmonics, and it allows us to design a broad range of complex metal/dielectric systems, all having different nanophotonic responses, but all originating from our ability to engineer the system surface plasmon resonances and interactions. In this thesis, we demonstrate how plasmonics can be used to develop coupled metal-dielectric systems to function as tunable plasmonic hole array color filters for CMOS image sensing, visible metamaterials composed of coupled negative-index plasmonic coaxial waveguides, and programmable plasmonic waveguide network systems to serve as color routers and logic devices at telecommunication wavelengths.

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长期以来,远场光学荧光显微镜凭借其非接触、无损伤、可探测样品内部等优点,一直是生命科学中最常用的观测工具。但由于衍射极限的存在,使传统的宽场光学显微镜横向和纵向的分辨率分别仅约为230 nm和1000 nm。为了揭示细胞内分子尺度的动态和结构特征,提高光学显微镜分辨率成为生命科学发展的迫切要求,在远场荧光显微镜的基础上,科学家们已经发展出许多实用的提高分辨率甚至超越分辨率极限的成像技术。例如,采用横向结构光照明提高横向分辨率到约100 nm,利用纵向驻波干涉效应将纵向分辨率提高5~10倍。然而,直到在光学荧光显微镜中引入非线性效应后,衍射极限才被真正突破,如受激荧光损耗显微镜利用非线性效应实现了30~50 nm的三维分辨率。另外应用荧光分子之间能量转移共振原理以及单荧光分子定位技术也可以突破衍射极限,甚至可以将分子定位精度提高到几个纳米的量级。

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超分辨技术因其可以超越经典的衍射极限而为人们所熟知.并且.在光存储和共焦扫描成像系统中有着广泛的应用。把由两个偏振器和一个圆对称的双折射元件组成的径向双折射滤波器引入超分辨技术,借助琼斯算法推导出其光瞳函数的表达式。由分析得出通过改变径向双折射滤波器中偏振器的偏振方向和双折射元件的主轴之间的夹角,即可实现光学系统的横向超分辨或轴向超分辨。同时对评价该器件超分辨性能的参量第一零点比、斯特尔比和旁瓣强度抑制比做了详细的讨论。该滤波器用于超分辨技术的优点在于其制作不涉及相位的变化而比较简单,且费用比较低。缺点是

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在星间激光通信中,涉及对大口径衍射极限激光波面的检测,为保证测量精度,必须严格控制波面十涉仪镜子的自重和温度变形。采用有限元方法对大型干涉仪镜子在不同支承方式下的表面变形进行了分析,结果表明,接触角为180°的钢带支承是较好的支承方式,反射镜表面变形峰-谷(P-V)值仅为1.35nm,均方根(RMS)值为0.363nm根据这一结论,设计了一个同定支承点与浮动支承相结合的超静定钢带支承结构。在该结构下,分析了镜子轴向、径向、周向的温度梯度效应,分析数据表明,镜子的热弹性变形远大于自重变形,建议采取一定的温控

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In laser applications, the size of the focus spot can be reduced beyond the diffraction limit with a thin film of strong nonlinear optical Kerr effect. We present a concise theoretical simulation of the device. The origin of the super-resolution is found to be mainly from the reshaping effect due to the strongly nonlinear refraction mediated multi-interference inside the thin film. In addition, both diffraction and self-focusing effects have been explored and found negligible for highly refractive and ultrathin films in comparison with the reshaping effect. Finally, the theoretic model has been verified in experiments with single Ge2Sb2Te5 film and SiN/Si/SiN/Ge2Sb2Te2 multilayer structures. (c) 2006 American Institute of Physics.

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Static recording characteristic of super-resolution near-field structure with antimony (Sb) is investigated in this paper. The recording marks are observed by a scanning electron microscopy (SEM), a high-resolution optical microscopy with a CCD camera and an atomic force microscopy (AFM). The super-resolution mechanism is also analyzed based on these static recording marks. Results show that the light reaching on recording layer is composed of two parts, one is the linear transmissive light (propagating field) and the other is the nonlinear evanescent light in the optical near field. The evanescent light may be greatly enhanced in the center of the spot because Sb will transit from a semiconductor to a metal when it is melted under the high laser power irradiation. This local melted area in the spot center may be like a metal tip in the optical near field that can collect and enhance the information that is far beyond the diffraction limit, which leads to the super-resolution recording and readout. (c) 2005 Elsevier Ltd. All rights reserved.

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近场超分辨纳米薄膜结构可以突破衍射极限实现纳米尺寸信息存储,是下一代海量存储技术的重要方案之一,也是纳米光子学研究中的热点。纳米膜层结构基于激光作用下的非线性局域光学效应实现超分辨。分析了超分辨近场薄膜结构突破衍射极限的光学原理,对超分辨纳米薄膜结构的表面等离子体激发特性、非线性光学特性、近场光学特性和超透镜效应等重要光学性质的最新研究进展做了系统介绍。

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In a configuration of optical far-field scanning microscopy, super-resolution achieved by inserting a third-order optical nonlinear thin film is demonstrated and analyzed in terms of the frequency response function. Without the thin film the microscopy is diffraction limited; thus, subwavelength features cannot be resolved. With the nonlinear thin film inserted, the resolution is dramatically improved and thus the microscopy resolves features significantly smaller than the smallest spacing allowed by the diffraction limit. A theoretical model is established and the device is analyzed for the frequency response function. The results show that the frequency response function exceeds the cutoff spatial frequency of the microscopy defined by the laser wavelength and the numerical aperture of the convergent lens. The main contribution to the improvement of the cutoff spatial frequency is from the phase change induced by the complex transmission of the nonlinear thin film. Experimental results are presented and are shown to be consistent with the results of theoretical simulations.

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In laser applications, resolutions beyond the diffraction limit can be obtained with a thin film of strong optical nonlinear effect. The optical index of the silicon thin film is modified with the incident laser beam as a function of the local field intensity n(r) similar to E-2(r). For ultrathin films of thickness d << lambda the transmitted light through the film forms a profile of annular rings. Therefore, the device can be related to the realization of super-resolution with annular pupils. Theoretical analysis shows that the focused light spot appears significantly reduced in comparison with the diffraction limit that is determined by the laser wavelength and the numerical aperture of the converging lens. Analysis on the additional optical transfer function due to the thin film confirms that the resolving power is improved in the high spatial frequency region. (C) 2007 Published by Elsevier B.V.

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Sb-Bi alloy films are proposed as a new kind of super-resolution mask layer with low readout threshold power. Using the Sb-Bi alloy film as a mask layer and SiN as a protective layer in a read-only memory disc, the super-resolution pits with diameters of 380 nm are read out by a dynamic setup, the laser wavelength is 780 nm and the numerical aperture of pickup lens is 0.45. The effects of the Sb-Bi thin film thickness, laser readout power and disc rotating velocity on the readout signal are investigated. The results show that the threshold laser power of super-resolution readout of the Sb-Bi mask layer is about 0.5 mW, and the corresponding carrier-to-noise ratio is about 20 dB at the film thickness of 50 nm. The super-resolution mechanism of the Sb-Bi alloy mask layer is discussed based on its temperature dependence of reflection.

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Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of similar to 20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with 30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

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High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.

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A Nd:GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at.% Nd-doped Nd:GdVO4. The crystal absorbs pumping light of 4.30 W at 913 nm and produces a very low quantity of heat with the opto-optic conversion efficiency of 77.2%. The average slope efficiency is 81.2% from 0.21 W, at the threshold, to 4.30 W of absorbed pump power. Because of the very weakly thermal effect, the near-diffraction-limit beam is easily obtained with beam quality factor of M-2 approximate to 1.1.

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Using the regularization theory for improperly posed problems, we discuss object restoration beyond the diffraction limit in the presence of noise. Only the case of one-dimensional coherent objects is considered. We focus attention n the estimation of the error on the restored objects, and we show that, in most realistic cases, it is at best proportional to an inverse power of