Formation mechanism of self-organized voids in dielectrics induced by tightly focused femtosecond laser pulses

In this paper, we briefly summarize two typical morphology characteristics of the self-organized void array induced in bulk of fused silica glass by a tightly focused femtosecond laser beam, such as the key role of high numerical aperture in the void array formation and the concentric-circle-like structure indicated by the top view of the void array. By adopting a physical model which combines the nonlinear propagation of femtosecond laser pulses with the spherical aberration effect (SA) at the interface of two mediums of different refractive indices, reasonable agreements between the simulation results and the experimental results are obtained. By comparing the fluence distributions of the case with both SA and nonlinear effects included and the case with only consideration of SA, we suggest that spherical aberration, which results from the refractive index mismatch between air and fused silica glass, is the main reason for the formation of the self-organized void array. (c) 2008 American Institute of Physics.

Ramp oxide termination structure using high-k dielectrics for high voltage diamond Schottky diodes

The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

Impact of high-k dielectrics on breakdown performances of SiC and diamond Schottky diodes

This paper presents a comparison between SiC and diamond Schottky barrier diodes using the oxide ramp termination. The influences of the dielectric thickness and relative permittivity on the diode's electrical performance are investigated. Typical commercial drift layer parameters are used for this study. The extension of the space charge area throughout the drift region and the current distribution at breakdown are shown. The efficiency of the termination is also evaluated for both SiC and diamond diodes. © (2009) Trans Tech Publications, Switzerland.

Polymer gate dielectrics with self-assembled monolayers for high-mobility organic thin-film transistors based on copper phthalocyanine

Organic thin-film transistors based on polycrystalline copper phthalocyanine (CuPc) were fabricated by using poly(vinyl alcohol) as gate dielectric. After treatment of the gate dielectric using an octadecyltrichlorosilane self-assembled monolayer, a mobility of up to 0.11 cm2/V∈s was achieved, which is comparable to that of single-crystal CuPc devices (0.1-1 cm2/V∈s). The surface morphology was analyzed and the possible reasons for the enhanced mobility are discussed. © 2009 Springer-Verlag.