磷酸盐激光玻璃的化学机械抛光

从磷酸盐激光玻璃的成分和结构出发,分析了其化学机械抛光(CMP)机制。通过实验验证了磷酸盐激光玻璃对抛光液pH值具有较强的选择性,在微酸性和中性条件下磷酸盐激光玻璃具有较高的抛光效率,在抛光液中添加pH值调节添加剂会保持抛光环境的酸碱性从而影响抛光效率和抛光质量。通过对pH值和抛光剂浓度的控制获得了均方根(RMS)优于0.6 nm的磷酸盐激光玻璃的超光滑表面。

Effects of Cu-Wire Surface Fluctuations on Early Failures

Different chemical mechanical polishing （CMP） slurries are used to obtain single-damascene Cu-wires with different surface fluctuations as well as pre-existing surface-defects in wires with rougher surfaces. The presence of such pre-existing defects strongly increases the rate of early failures to almost 100%, reduces electromigration lifetime rapidly to the level of early failures, and changes the multimodal failure distribution into monomodal. The activation energy （0. 74±0.02eV） for the failure mechanism associated with these pre-existing defects confirms a dominant surface diffusion. It shows how a weakest link approximation analysis can he applied to a single wire by dividing the wire into relevant segments and assigning different failure mechanisms to the various segments. The analysis confirms that, although surface-defects are not the fastest early failure mechanism, the ten times higher surface-defectdensity in the rougher wires is responsible for the observed high early-failure rate and unreliable performance.

Development of germanium/silicon integration for near infrared detection

Silicon (Si) is the base material for electronic technologies and is emerging as a very attractive platform for photonic integrated circuits (PICs). PICs allow optical systems to be made more compact with higher performance than discrete optical components. Applications for PICs are in the area of fibre-optic communication, biomedical devices, photovoltaics and imaging. Germanium (Ge), due to its suitable bandgap for telecommunications and its compatibility with Si technology is preferred over III-V compounds as an integrated on-chip detector at near infrared wavelengths. There are two main approaches for Ge/Si integration: through epitaxial growth and through direct wafer bonding. The lattice mismatch of ~4.2% between Ge and Si is the main problem of the former technique which leads to a high density of dislocations while the bond strength and conductivity of the interface are the main challenges of the latter. Both result in trap states which are expected to play a critical role. Understanding the physics of the interface is a key contribution of this thesis. This thesis investigates Ge/Si diodes using these two methods. The effects of interface traps on the static and dynamic performance of Ge/Si avalanche photodetectors have been modelled for the first time. The thesis outlines the original process development and characterization of mesa diodes which were fabricated by transferring a ~700 nm thick layer of p-type Ge onto n-type Si using direct wafer bonding and layer exfoliation. The effects of low temperature annealing on the device performance and on the conductivity of the interface have been investigated. It is shown that the diode ideality factor and the series resistance of the device are reduced after annealing. The carrier transport mechanism is shown to be dominated by generation–recombination before annealing and by direct tunnelling in forward bias and band-to-band tunnelling in reverse bias after annealing. The thesis presents a novel technique to realise photodetectors where one of the substrates is thinned by chemical mechanical polishing (CMP) after bonding the Si-Ge wafers. Based on this technique, Ge/Si detectors with remarkably high responsivities, in excess of 3.5 A/W at 1.55 μm at −2 V, under surface normal illumination have been measured. By performing electrical and optical measurements at various temperatures, the carrier transport through the hetero-interface is analysed by monitoring the Ge band bending from which a detailed band structure of the Ge/Si interface is proposed for the first time. The above unity responsivity of the detectors was explained by light induced potential barrier lowering at the interface. To our knowledge this is the first report of light-gated responsivity for vertically illuminated Ge/Si photodiodes. The wafer bonding approach followed by layer exfoliation or by CMP is a low temperature wafer scale process. In principle, the technique could be extended to other materials such as Ge on GaAs, or Ge on SOI. The unique results reported here are compatible with surface normal illumination and are capable of being integrated with CMOS electronics and readout units in the form of 2D arrays of detectors. One potential future application is a low-cost Si process-compatible near infrared camera.

Morphologically Diverse Cerium Oxide Nanostructures and Nanofields for Multi functional applications.

The prospective impact of nanomaterials in science and technology has followed an increasing trend due to their unique chemical and physical properties compared to bulk. Significant advances in current technologies in areas such as clean energy production, electronics, medicine, and environment have fuelled major research and development efforts in nanotechnology around the world. This leads to the opportunity to use such nanostructured materials in novel applications and devices. Ceria, zirconia, alumina and titania are some of the major oxides which find vast applications as a nanomaterial on a wider side.

Applications for nanomaterials in critical technologies

This thesis is devoted to the development, synthesis, properties, and applications of nano materials for critical technologies, including three areas: (1) Microbial contamination of drinking water is a serious problem of global significance. About 51% of the waterborne disease outbreaks in the United States can be attributed to contaminated ground water. Development of metal oxide nanoparticles, as viricidal materials is of technological and fundamental scientific importance. Nanoparticles with high surface areas and ultra small particle sizes have dramatically enhanced efficiency and capacity of virus inactivation, which cannot be achieved by their bulk counterparts. A series of metal oxide nanoparticles, such as iron oxide nanoparticles, zinc oxide nanoparticles and iron oxide-silver nanoparticles, coated on fiber substrates was developed in this research for evaluation of their viricidal activity. We also carried out XRD, TEM, SEM, XPS, surface area measurements, and zeta potential of these nanoparticles. MS2 virus inactivation experiments showed that these metal oxide nanoparticle coated fibers were extremely powerful viricidal materials. Results from this research suggest that zinc oxide nanoparticles with diameter of 3.5 nm, showing an isoelectric point (IEP) at 9.0, were well dispersed on fiberglass. These fibers offer an increase in capacity by orders of magnitude over all other materials. Compared to iron oxide nanoparticles, zinc oxide nanoparticles didn’t show an improvement in inactivation kinetics but inactivation capacities did increase by two orders of magnitude to 99.99%. Furthermore, zinc oxide nanoparticles have higher affinity to viruses than the iron oxide nanoparticles in presence of competing ions. The advantages of zinc oxide depend on high surface charge density, small nanoparticle sizes and capabilities of generating reactive oxygen species. The research at its present stage of development appears to offer the best avenue to remove viruses from water. Without additional chemicals and energy input, this system can be implemented by both points of use (POU) and large-scale use water treatment technology, which will have a significant impact on the water purification industry. (2) A new family of aliphatic polyester lubricants has been developed for use in micro-electromechanical systems (MEMS), specifically for hard disk drives that operate at high spindle speeds (>15000rpm). Our program was initiated to address current problems with spin-off of the perfluoroether (PFPE) lubricants. The new polyester lubricant appears to alleviate spin-off problems and at the same time improves the chemical and thermal stability. This new system provides a low cost alternative to PFPE along with improved adhesion to the substrates. In addition, it displays a much lower viscosity, which may be of importance to stiction related problems. The synthetic route is readily scalable in case additional interest emerges in other areas including small motors. (3) The demand for increased signal transmission speed and device density for the next generation of multilevel integrated circuits has placed stringent demands on materials performance. Currently, integration of the ultra low-k materials in dual Damascene processing requires chemical mechanical polishing (CMP) to planarize the copper. Unfortunately, none of the commercially proposed dielectric candidates display the desired mechanical and thermal properties for successful CMP. A new polydiacetylene thermosetting polymer (DEB-TEB), which displays a low dielectric constant (low-k) of 2.7, was recently developed. This novel material appears to offer the only avenue for designing an ultra low k dielectric (1.85k), which can still display the desired modulus (7.7Gpa) and hardness (2.0Gpa) sufficient to withstand the process of CMP. We focused on further characterization of the thermal properties of spin-on poly (DEB-TEB) ultra-thin film. These include the coefficient of thermal expansion (CTE), biaxial thermal stress, and thermal conductivity. Thus the CTE is 2.0*10-5K-1 in the perpendicular direction and 8.0*10-6 K-1 in the planar direction. The low CTE provides a better match to the Si substrate which minimizes interfacial stress and greatly enhances the reliability of the microprocessors. Initial experiments with oxygen plasma etching suggest a high probability of success for achieving vertical profiles.

High bandwidth freestanding semipolar (11–22) InGaN/GaN light-emitting diodes

Freestanding semipolar (11–22) indium gallium nitride (InGaN) multiplequantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50- m-thick GaN layer grown on a patterned (10–12) r -plane sapphire substrate (PSS). The GaN grooves originating from the growth on PSS were removed by chemical mechanical polishing. The 300 m × 300 m LEDs showed a turn-on voltage of 3.6 V and an output power through the smooth substrate of 0.87 mW at 20 mA. The electroluminescence spectrum of LEDs before and after LLO showed a stronger emission intensity along the [11–23]InGaN/GaN direction. The polarization anisotropy is independent of the GaN grooves, with a measured value of 0.14. The bandwidth of the LEDs is in excess of 150 MHz at 20 mA, and back-to-back transmission of 300 Mbps is demonstrated, making these devices suitable for visible light communication (VLC) applications.

The Influence of Different Surface Treatments on the Mechanical Strength of Silicon Wafers

The implementation of photovoltaic solar energy based on silicon is being slowed down by the shortage of raw material. In this context, the use of thinner wafers arises as a solution reducing the amount of silicon in the photovoltaic modules. On the other hand, the manufacturing process with thinner wafers can become complicated with traditional tools. The high number of damaged wafers reduces the global yield. It’s known that edge and surface cracks and defects determine the mechanical strength of wafers. There are several ways of removing these defects e. g. subjecting wafers to a mechanical polishing or to a chemical etching. This paper shows a comparison between different surface treatments and their influence on the mechanical strength.

Effects of surface treatment on sapphire substrates

The influence of mechanical polishing, chemo-mechanical polishing (CMP), as well as CMP and subsequent chemical etching on the properties of sapphire substrate surfaces has been studied. The sapphire substrates have been investigated by means of polarizing microscopy, atomic force microscopy (AFM). X-ray diffraction rocking curves (XRCs) and micro-Raman spectroscopy. The results show that CMP with subsequent chemically etching yields the best-quality sapphire substrate surfaces. (C) 2004 Elsevier B.V. All rights reserved.

The microstructure and mechanical properties of ball-milled stainless steel powder: The effect of hot-pressing vs. laser sintering

The microstructure and mechanical properties of sintered stainless steel powder, of composition AISI 420, have been measured. Ball-milled powder comprising nanoscale grains was sintered to bulk specimens by two alternative routes: hot-pressing and microlaser sintering. The laser-sintered alloy has a porosity of 6% and comprises a mixture of delta ferrite and tempered martensite, and the relative volume fraction varies along the axis of the specimen due to a thermal cycle that evolves with progressive deposition. In contrast, the hot-pressed alloy has a porosity of 0.7% and exhibits a martensitic lath structure with carbide particles at the boundaries of the prior austenite grains. These differences in microstructure lead to significant differences in mechanical properties. For example, the uniaxial tensile strength of the hot-pressed material is one-half of its compressive strength, due to void initiation at the carbide particles at the prior austenite grain boundaries. Nanoindentation measurements reveal a size effect in hardness and also reveal the sensitivity of hardness to the presence of mechanical polishing and electropolishing. © 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Sol-gel derived iridium composite glucose biosensor

Iridium powder is introduced into sol-gel process for the first time to fabricate a novel type of sol-gel derived metal composite electrode. The iridium ceramic electrode shows excellent electrocatalytic action for both oxidation and reduction of hydrogen peroxide. The glucose biosensor based on sol-gel derived iridium composite electrode was fabricated. The biosensor shows highly selectivity towards glucose because of the strong catalytic action of iridium composite matrix for enzyme-liberated hydrogen peroxide at low operating potential, at which common interferences cannot be sensed. The novel type of biosensor can be renewed by simply mechanical polishing with favorable reproducibility and long-term stability.

Sol-gel derived iridium composite glucose biosensor

Iridium powder is introduced into sol-gel process for the first time to fabricate a novel type of sol-gel derived metal composite electrode. The iridium ceramic electrode shows excellent electrocatalytic action for both oxidation and reduction of hydrogen peroxide. The glucose biosensor based on sol-gel derived iridium composite electrode was fabricated. The biosensor shows highly selectivity towards glucose because of the strong catalytic action of iridium composite matrix for enzyme-liberated hydrogen peroxide at low operating potential, at which common interferences cannot be sensed. The novel type of biosensor can be renewed by simply mechanical polishing with favorable reproducibility and long-term stability.

Electrochemiluminescent determination of glucose with a sol-gel derived ceramic-carbon composite electrode as a renewable optical fiber biosensor

A sol-gel derived ceramic-carbon composite electrode is used for fabrication of a new type of optical fiber biosensor based on luminol electrochemiluminescence (ECL). The electrode consists of graphite powder impregnated with glucose oxidase in a silicate network. In this configuration, the immobilized enzyme oxidizes glucose to liberate hydrogen peroxide and graphite powder provides percolation conductivity for triggering the ECL between luminol and the liberated hydrogen peroxide. Both of the reactions occur simultaneously on the surface of the composite electrode, thereby the response of the biosensor is very fast. The peak intensity was achieved within only 20 s after glucose injection. In addition, the electrode could be renewed by a simple mechanical polishing step in case of contamination or fouling. The linear range extends from 0.01 to 10 mM for glucose and the detection limit is about 8.16 muM. The renewal repeatability and stability of the biosensor are also investigated in detail.

Cupric hexacyanoferrate nanoparticle modified carbon ceramic composite electrodes

Graphite powder-supported cupric hexacyanoferrate (CuHCF) nanoparticles were dispersed into methyltrimethoxysilane based gels to produce a conducting carbon ceramic Composite, which was used as electrode material to fabricate surface- renewable CuHCF-modified electrodes. Electrochemical behavior of the CuHCF-modifled carbon ceramic composite electrodes was characterized using cyclic and square-wave voltammetry. Cyclic voltammograms at various scan rates indicated that peak currents were surface-confined at low scan rates. In the presence of glutathione, a clear electrocatalytic response was observed at the CuHCF-modified composite electrodes. In addition, the electrodes exhibited a distinct advantage of reproducible surface-renewal by simple mechanical polishing on emery paper, as well as ease of preparation, and good chemical and mechanical stability in a flowing stream.

Surface renewable graphite organosilicate composite electrode containing indium(III) hexacyanoferrate(II/III)

Indium(III) hexacyanoferrate(II/III) (InHCF) supported on graphite powder was prepared using the in situ chemical deposition procedure and subsequently dispersed into methyltrimethoxysilane-derived gels to yield a conductive graphite organosilicate composite. The composite was used as the electrode material to fabricate a three-dimensional InHCF-modified electrode. InHCF acts as a catalyst, graphite powder ensures conductivity by percolation, the silicate provides a rigid porous backbone and the methyl groups endow hydrophobicity and thus limit the wetting section of the modified electrode. The chemically modified electrode can electrocatalyze the oxidation of thiosulfate, and exhibits a good repeatability of surface-renewal by simple mechanical polishing, as well as simple preparation, good chemical and mechanical stability.

Amperometric determination of thiosulfate at a surface-renewable nickel(II) hexacyanoferrate-modified carbon ceramic electrode

Graphite powder-supported nickel(II) hexacyanoferrate (NiHCF) was prepared by the in situ chemical deposition method and then dispersed into methyltrimethoxysilane-derived gels to form a conductive composite. The composite was used as electrode material to construct a surface-renewable three-dimensional NiHCF-modified carbon ceramic electrode. Electrochemical behavior of the chemically modified electrode was well characterized using cyclic and square-wave voltammetry. The electrode presented a good electrocatalytic activity toward the oxidization of thiosulfate and thus was used as an amperometric sensor for thiosulfate in the photographic waste effluent. In addition, the electrode exhibited a distinct advantage of surface-renewal by simple mechanical polishing, as well as simple preparation, good chemical and mechanical stability. (C) 2001 Elsevier Science B.V. All rights reserved.