Molecular beam epitaxy InAs dot arrays on InGaAs/GaAs

Periodical alignment of the InAs dots along the < 100 > and < 110 > directions was observed on an elastically relaxed InGaAs buffer layer grown at 500 and 450 degrees C, respectively, on the vicinal GaAs(001) substrate. Due to alignment along these directions, the InAs dots were arranged into a quasi-two-dimensional hexagonal lattice. Such a periodical arrangement of InAs dots may be explained in terms of modulation in strain as well as composition along [110] as observed by using cross-sectional transmission electron microscopy.

Indium composition dependence of the size uniformity of InGaAs quantum dots on (311)B GaAs grown by molecular beam epitaxy

The deposition of InxGa1-xAs (0.2 less than or equal to x less than or equal to 0.5) on (311)B GaAs surfaces using solid source molecular beam epitaxy (MBE) has been studied. Both AFM and photoluminescence emission showed that homogeneous quantum dots could be formed on (311)B GaAs surface when indium composition was around 0.4. Indium composition had a strong influence on the size uniformity and the lateral alignment of quantum dots. Compared with other surface orientation, (100) and (n11) A/B (n=1,2,3), photoluminescence measurement confirmed that (311)B surface is the most advantageous in fabricating uniform and dense quantum dots.

Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy

In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.

Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)

InAs and In0.9Al0.1As self-assembled quantum dots have been grown by Stranski-Krastanow growth mode on In0.52Al0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In0.9Al0.1As dots on InP was demonstrated for the first time. The structural and optical properties were characterized using TEM and PL, respectively. Experimental results show that, a larger critical thickness is required for In0.9Al0.1As dots formation than for InAs dots, the In0.9Al0.1As dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both InAs and In0.9Al0.1As dots, and In0.9Al0.1As dots give narrower luminescence than InAs dots. (C) 1999 Elsevier Science B.V. All rights reserved.

Lateral ordered InGaAs self-organized quantum dots grown on (311) GaAs by conventional molecular beam epitaxy

Self-assembled InxGa1-xAs quantum dots (QDs) on (311) and (100) GaAs surfaces have been grown by conventional solid source molecular beam epitaxy. Spontaneously ordering alignment of InxGa1-xAs QDs with lower In content around 0.3 has been observed on As-terminated (B type) surfaces. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311) B surface, and is strongly dependent upon the In content x. The ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) and (311) Ga-terminated (A type) substrates.

Molecular-beam epitaxial growth of position controlled InAs islands on cleaved edge of InGaAs/GaAs superlattice

A promising approach for positioning of InAs islands on (110)GaAs is demonstrated. By combining self-assembly of quantum dots with solid source molecular beam epitaxy (MBE) on cleaved edge of InGaAs/GaAs superlattice (SL), linear alignment of InAs islands on the InGaAs strain layers have been fabricated The cleaved edge of InGaAs/GaAs SL acts as strain nanopattern for InAs selective growth. Indium atoms incident on the surface will preferentially migrate to InGaAs regions where favorable bonding sites are available. The strain nanopattern's effect is studied by the different indium fraction and thickness of InxGa1-xAs/GaAs SL. The ordering of the InAs islands is found to depend on the properties of the underlying InGaAs strain layers.

Photothermal beam deflection for non-destructive evaluation of semiconductor thin films

Non-destructive testing (NDT) is the use of non-invasive techniques to determine the integrity of a material, component, or structure. Engineers and scientists use NDT in a variety of applications, including medical imaging, materials analysis, and process control.Photothermal beam deflection technique is one of the most promising NDT technologies. Tremendous R&D effort has been made for improving the efficiency and simplicity of this technique. It is a popular technique because it can probe surfaces irrespective of the size of the sample and its surroundings. This technique has been used to characterize several semiconductor materials, because of its non-destructive and non-contact evaluation strategy. Its application further extends to analysis of wide variety of materials. Instrumentation of a NDT technique is very crucial for any material analysis. Chapter two explores the various excitation sources, source modulation techniques, detection and signal processing schemes currently practised. The features of the experimental arrangement including the steps for alignment, automation, data acquisition and data analysis are explained giving due importance to details.Theoretical studies form the backbone of photothermal techniques. The outcome of a theoretical work is the foundation of an application.The reliability of the theoretical model developed and used is proven from the studies done on crystalline.The technique is applied for analysis of transport properties such as thermal diffusivity, mobility, surface recombination velocity and minority carrier life time of the material and thermal imaging of solar cell absorber layer materials like CuInS2, CuInSe2 and SnS thin films.analysis of In2S3 thin films, which are used as buffer layer material in solar cells. The various influences of film composition, chlorine and silver incorporation in this material is brought out from the measurement of transport properties and analysis of sub band gap levels.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention.The application of photothermal deflection technique for characterization of solar cells is a relatively new area that requires considerable attention. Chapter six thus elucidates the theoretical aspects of application of photothermal techniques for solar cell analysis. The experimental design and method for determination of solar cell efficiency, optimum load resistance and series resistance with results from the analysis of CuInS2/In2S3 based solar cell forms the skeleton of this chapter.

Alignment of the CMS silicon tracker during commissioning with cosmic rays

The CMS silicon tracker, consisting of 1440 silicon pixel and 15 148 silicon strip detector modules, has been aligned using more than three million cosmic ray charged particles, with additional information from optical surveys. The positions of the modules were determined with respect to cosmic ray trajectories to an average precision of 3-4 microns RMS in the barrel and 3-14 microns RMS in the endcap in the most sensitive coordinate. The results have been validated by several studies, including laser beam cross-checks, track fit self-consistency, track residuals in overlapping module regions, and track parameter resolution, and are compared with predictions obtained from simulation. Correlated systematic effects have been investigated. The track parameter resolutions obtained with this alignment are close to the design performance. © 2010 IOP Publishing Ltd and SISSA.

Advanced Beamforming for Distributed and Multi-Beam Networks

Beamforming entails joint processing of multiple signals received or transmitted by an array of antennas. This thesis addresses the implementation of beamforming in two distinct systems, namely a distributed network of independent sensors, and a broad-band multi-beam satellite network. With the rising popularity of wireless sensors, scientists are taking advantage of the flexibility of these devices, which come with very low implementation costs. Simplicity, however, is intertwined with scarce power resources, which must be carefully rationed to ensure successful measurement campaigns throughout the whole duration of the application. In this scenario, distributed beamforming is a cooperative communication technique, which allows nodes in the network to emulate a virtual antenna array seeking power gains in the order of the size of the network itself, when required to deliver a common message signal to the receiver. To achieve a desired beamforming configuration, however, all nodes in the network must agree upon the same phase reference, which is challenging in a distributed set-up where all devices are independent. The first part of this thesis presents new algorithms for phase alignment, which prove to be more energy efficient than existing solutions. With the ever-growing demand for broad-band connectivity, satellite systems have the great potential to guarantee service where terrestrial systems can not penetrate. In order to satisfy the constantly increasing demand for throughput, satellites are equipped with multi-fed reflector antennas to resolve spatially separated signals. However, incrementing the number of feeds on the payload corresponds to burdening the link between the satellite and the gateway with an extensive amount of signaling, and to possibly calling for much more expensive multiple-gateway infrastructures. This thesis focuses on an on-board non-adaptive signal processing scheme denoted as Coarse Beamforming, whose objective is to reduce the communication load on the link between the ground station and space segment.

High accuracy alignment facility for the receiver and transmitter of the BepiColombo Laser Altimeter

The accurate co-alignment of the transmitter to the receiver of the BepiColombo Laser Altimeter is a challenging task for which an original alignment concept had to be developed. We present here the design, construction and testing of a large collimator facility built to fulfill the tight alignment requirements. We describe in detail the solution found to attenuate the high energy of the instrument laser transmitter by an original beam splitting pentaprism group. We list the different steps of the calibration of the alignment facility and estimate the errors made at each of these steps. We finally prove that the current facility is ready for the alignment of the flight instrument. Its angular accuracy is 23 μrad.

Cone Beam and Micro-Computed Tomography Validation of Manual Array Insertion for Minimally Invasive Cochlear Implantation

Delivering cochlear implants through a minimally invasive tunnel (1.8 mm in diameter) from the mastoid surface to the inner ear is referred to as direct cochlear access (DCA). Based on cone beam as well as micro-computed tomography imaging, this in vitro study evaluates the feasibility and efficacy of manual cochlear electrode array insertions via DCA. Free-fitting electrode arrays were inserted in 8 temporal bone specimens with previously drilled DCA tunnels. The insertion depth angle, procedural time, tunnel alignment as well as the inserted scala and intracochlear trauma were assessed. Seven of the 8 insertions were full insertions, with insertion depth angles higher than 520°. Three cases of atraumatic scala tympani insertion, 3 cases of probable basilar membrane rupture and 1 case of dislocation into the scala vestibuli were observed (1 specimen was damaged during extraction). Manual electrode array insertion following a DCA procedure seems to be feasible and safe and is a further step toward clinical application of image-guided otological microsurgery.

Optical Tolerance Analysis of the Multi-Beam Limb Viewing Instrument STEAMR

In this paper, we report on an optical tolerance analysis of the submillimeter atmospheric multi-beam limb sounder, STEAMR. Physical optics and ray-tracing methods were used to quantify and separate errors in beam pointing and distortion due to reflector misalignment and primary reflector surface deformations. Simulations were performed concurrently with the manufacturing of a multi-beam demonstrator of the relay optical system which shapes and images the beams to their corresponding receiver feed horns. Results from Monte Carlo simulations show that the inserts used for reflector mounting should be positioned with an overall accuracy better than 100 μm (~ 1/10 wavelength). Analyses of primary reflector surface deformations show that a deviation of magnitude 100 μm can be tolerable before deployment, whereas the corresponding variations should be less than 30 μm during operation. The most sensitive optical elements in terms of misalignments are found near the focal plane. This localized sensitivity is attributed to the off-axis nature of the beams at this location. Post-assembly mechanical measurements of the reflectors in the demonstrator show that alignment better than 50 μm could be obtained.

Near infrared high efficiency InAs/GaAsSb QDLEDs: band alignment and carrier recombination mechanisms

The development of high efficiency laser diodes (LD) and light emitting diodes (LED) covering the 1.0 to 1.55 μm region of the spectra using GaAs heteroepitaxy has been long pursued. Due to the lack of materials that can be grown lattice-macthed to GaAs with bandgaps in the 1.0 to 1.55 μm region, quantum wells (QW) or quantum dots (QD) need be used. The most successful approach with QWs has been to use InGaAs, but one needs to add another element, such as N, to be able to reach 1.3/1.5μm. Even though LDs have been successfully demonstrated with the QW approach, using N leads to problems with compositional homogeneity across the wafer, and limited efficiency due to strong non-radiative recombination. The alternative approach of using InAs QDs is an attractive option, but once again, to reach the longest wavelengths one needs very large QDs and control over the size distribution and band alignment. In this work we demonstrate InAs/GaAsSb QDLEDs with high efficiencies, emitting from 1.1 to 1.52 μm, and we analyze the band alignment and carrier loss mechanisms that result from the presence of Sb in the capping layer.

Site-controlled Ag nanocrystals grown by molecular beam epitaxy-Towards plasmonic integration technology

We demonstrate site-controlled growth of epitaxial Ag nanocrystals on patterned GaAs substrates by molecular beam epitaxy with high degree of long-range uniformity. The alignment is based on lithographically defined holes in which position controlled InAs quantum dots are grown. The Ag nanocrystals self-align preferentially on top of the InAs quantum dots. No such ordering is observed in the absence of InAs quantum dots, proving that the ordering is strain-driven. The presented technique facilitates the placement of active plasmonic nanostructures at arbitrarily defined positions enabling their integration into complex devices and plasmonic circuits.