Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties

The growth of InAs quantum dots on vicinal GaAs (100) Substrates was systematically studied using low-pressure metalorganic chemical vapor deposition (MOCVD). The dots showed a clear bimodal size distribution on vicinal substrates. The way of evolution of this bimodal size distribution was studied as a function of growth temperature, InAs layer thickness and InAs deposition rate. The optical properties of dots grown on vicinal substrates were also studied by photoluminescence (PL). It was found that, compared with dots on exact substrates, dots on vicinal substrates had better optical properties such as a narrower PL line width, a longer emission wavelength, and a larger PL intensity. (c) 2006 Elsevier B.V. All rights reserved.

Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

A detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal flat SiC (0001) substrates by molecular beam epitaxy, has been carried out using photoluminescence and Raman scattering techniques. The I I K photoluminescence spectra of the GaN film grown on the vicinal SiC (0001) substrate show a strong and sharp near-bandgap peak (full width at half maximum (FWHM) similar to 16 meV). This feature contrasts with that of the GaN film grown on the nominal flat SiC (0001) substrate where the I I K photoluminescence spectra exhibit the near-bandgap peak (FWHM similar to 25 meV) and the intensity is approximately seven times weaker than that of the vicinal film sample. The redshift of the near-bandgap peak associated with excitons bound to shallow donors is related to the stress caused by both the lattice mismatch and the thermal expansion coefficient difference between GaN and SiC substrates. The measured thermal activation energy of the shallow donor of 33.4 meV is determined by using an Arrhenius plot of the near-bandgap luminescence versus I IT from the slope of the graph at high temperature. The temperature dependence of the FWHM of the near-bandgap luminescence has also been studied. The Raman scattering measurements from the vicinal film reveal that the E-2 phonon peak is strengthened and the A(1)(LO) phonon peak is shifted towards the low-frequency side with enhanced intensity, in comparison to that from the nominal flat film, suggesting a reduction in the density of defects and a lower free carrier concentration in the vicinal GaN film.

Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

Influence of (001) vicinal GaAs substrates on the optical properties of defects in low-temperature grown GaAs/AlGaAs multiple quantum wells

Photoluminescence (PL) spectroscopy and carrier lifetime measurement has been used to characterize optical properties of defects in the low-temperature (LT) grown GaAs/AlGaAs multiple quantum well structures. Two sets of samples were grown at 400 degrees C by molecular beam epitaxy on nominal (001) and miscut [4 degrees off (001) towards (111) A] GaAs substrates, respectively. After growth, samples were subjected to 30 s rapid thermal annealing at 600-800 degrees C. It is found that after annealing, two defect-related PL features appear in the samples grown on nominal (001) GaAs substrates, but not in those grown on miscut (001) GaAs substrates. The carrier lifetimes are about 31 and 5 ps in as-grown samples grown on nominal and miscut (001) GaAs substrates, respectively. The different PL spectra and carrier lifetimes in two sets of samples are attributed to different structures of the As-Ga-like defects formed during LT growth. (C) 1999 American Institute of Physics. [S0003-6951(99)00230-2].

Anomalous temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates

Temperature-dependent bimodal size evolution of InAs quantum dots on vicinal GaAs(100) substrates grown by metalorganic chemical vapor deposition (MOCVD) is studied. An abnormal trend of the evolution on temperature is observed. With the increase of the growth temperature, while the density of the large dots decreases continually, that of the small dots first grows larger when temperature was below 520 degrees C, and then there is a sudden decrease at 535 degrees C. Photoluminescence (PL) studies show that QDs on vicinal substrates have a narrower PL line width, a longer emission wavelength and a larger PL intensity.

Growth of Space Ordered on GaAs（100） Vicinal 1.3μm InAs Quantum Dots Substrates by MOCVD

Space ordered 1.3μm self-assembled InAs QDs are grown on GaAs（100） vicinal substrates by MOCVD. Photoluminescence measurements show that the dots on vicinal substrates have a much higher PL intensity and a narrower FWHM than those of dots on exact substrates, which indicates better material quality. To obtain 1.3μm emissions of InAs QDs, the role of the so called InGaAs strain cap layer （SCL） and the strain buffer layer （SBL） in the strain relaxation process in quantum dots is studied. While the use of SBL results only in a small change of emission wavelength,SCL can extend the QD＇s emission over 1.3μm due to the effective strain reducing effect of SCL.

Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

Initial stage GaN growth by molecular-beam epitaxy (MBE) on SiC(0001) substrate is followed by in situ scanning tunneling microscopy. Comparison is made between growth on nominally flat and vicinal substrate surfaces and the results reveal characteristic differences between the two. Ex situ transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements of the films show lower density of defects and better structural quality of the vicinal film. We suggest the improved structural quality of the vicinal film is related to the characteristic difference in its initial stage nucleation and coalescence proccsses than that of the flat film.

Selectivity studies of the benzene cis-dihydrodiol dehydrogenase enzyme from Pseudomonas putida ML2 with Vicinal diol substrates

The enantiopure (1S, 2S)-cis-dihydrodiol metabolites 2B-5B have been obtained in low yield from the corresponding monosubstituted halobenzene substrates 2A-5A, using a wild-type strain of Pseudomonas putida (ML2) containing benzene dioxygenase (BDO). Benzene cis-dihydrodiol dehydrogenase (BCD) from P. putida ML2 and naphthalene cis-dihydrodiol dehydrogenase (NCD) from P. putida 8859 were purified and used in a comparative study of the stereoselective biotransformation of cis-dihydrodiol enantiomers 2B-5B. The BCD and NCD enzymes were found to accept cis-dihydrodiol enantiomers of monosubstituted benzene cis-dihydrodiol substrates 2B-5B of opposite absolute configuration. The acyclic alkene 1,2-diols 10-17 were also found to be acceptable substrates for BCD.

Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 (001) substrate surfaces

The initial growth mechanism of epitaxial BaTiO3 films is studied by combined application of atomic force microscopy, cross sectional high-resolution transmission electron microscopy, and x-ray diffraction. Epitaxial BaTiO3 thin films were grown by pulsed laser deposition on vicinal Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrates with well-defined terraces. X-ray diffraction and cross sectional high-resolution transmission electron microscopy investigations revealed well-defined epitaxial films and a sharp interface between BaTiO3 films and SrTiO3:Nb substrates. The layer-then-island (Stranski-Krastanov mode) growth mechanism observed by analyzing the morphology of a sequence of films with increasing amount of deposited material has been confirmed by microstructure investigations. (C) 2002 American Institute of Physics.

Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 : Nb (001) substrates

The growth mechanism of epitaxial BaTiO3 films on vicinal Nb-doped SrTiO3 (srTiO(3):Nb) (001) substrate surfaces was studied in terms of surface morphology, crystalline orientation, microstructure, and film/substrate interface. Well-oriented BaTiO3 thin films were grown on SrTiO3 substrates with well-defined terraces by pulsed laser deposition. The regularly terraced TiO2-terminated surfaces of vicinal SrTiO3:Nb (001) substrates were prepared by a definite chemical and thermal treatment. Under our conditions, BaTiO3 seems to grow with a layer-then-island (Stranski-Krastanov) growth mechanism. In order to investigate the orientation and crystallinity of the BaTiO3 films, x-ray diffraction and high-resolution transmission election microscopy were performed. Ferroelectricity of the BaTiO3 films was proved by electrical measurements performed on Pt/BaTiO3/SrTiO3:Nb heterostructures.

Voltammetric characterization of stepped platinum single crystal surfaces vicinal to the (110) pole

Platinum stepped surfaces vicinal to the (1 1 0) crystallographic pole have been investigated voltammetrically in 0.1 M HClO(4) and 0.1 M H(2)SO(4) solutions. Changes in the voltammetric profile with the step density suggest the existence of two types of surface sites, that has been ascribed to linear and bidimensional domains. This result indicates the existence of important restructuring processes that separate the real surface distribution from the nominal one. The electronic properties of the surfaces have been characterized with the CO charge displacement method and the potential of zero total charge has been calculated as a function of the step density. (c) 2009 Elsevier B.V. All rights reserved.

Diplopods as Bioindicators of Soils: Analysis of Midgut of Individuals Maintained in Substract Containing Sewage Sludge

Diplopods feed organic matter in decomposition; however, some environmental factors can promote changes in tissues of these animals. Sewage sludge has been applied for recuperation of physical structure of degraded soil. This work analyzed the influence of the sludge from a city of So Paulo in the midgut of the diplopod Rhinocricus padbergi. After the exposition to sludge, the midgut was prepared for histological and ultra-structural analyses. After 1 week of exposition, there were various glycoprotein globules in the fat body, which appeared, ultrastructurally, little electron dense. In the animals exposed for 2 weeks, there was an intensive renovation of the epithelium with the invasion of regenerative cells, which was observed in the histological and ultra-structural analyses. These data showed that the sludge present various substances that were very hazardous for these animals; more studies were necessary before the application of this in agriculture.

Poder local e o funcionamento do comércio vicinal na cidade de São Paulo (1765-1822)

Este texto apresenta algumas hipóteses e idéias sobre o comércio de abastecimento da cidade de São Paulo, entre os anos 1765-1822, através de dados quantitativos e qualitativos levantados em dois conjuntos documentais produzidos pelo Senado da Câmara: Atas e Papéis Avulsos. Este comércio é entendido como um dos circuitos do organismo colonial, conforme proposto por José Roberto do Amaral Lapa. Neste sentido, vem sendo constatado seu funcionamento autônomo, de acordo com os fluxos do mercado interno, as ações dos negociantes-arrematadores de contratos e as reações do Senado da Câmara de São Paulo para enfrentar seus contextos de crise e a radicalização de relações de poder em torno deste circuito mercantil, como fator desencadeador de disputas e hostilidades entre interesses políticos locais, negociantes-arrematadores e autoridades régias.

Mapeamento geológico-geontécnico de trecho da estrada vicinal na Serra de Itaqueri, Charqueada (SP)

Geological-geotechnical problems affecting escarps as well as embankment and fill slopes of roads and motorways may generate different types of unsteadiness, which are mainly arisen from the deficient knowledge about the physical environment. This results in unsuitable engineering projects and inadequate executions, which can be worsened by an occasional inappropriate maintenance of the construction. A geologically-geotechnically characterization of escarps and slopes is crucial in order to prevent these problems. This work deals with a geological-geotechnical study of 1:10.000 scale mapping in a stretch of a local road (CHQ-40) at the Serra de Itaqueri, Charqueada town, State of São Paulo. The stretch is known by several physical problems as erosion and mass movement. The methods of study were based on an integrative analysis of the diverse elements of the physical environment by using aerial photographs - to obtain the physiographic compartmentalization of terrain units - as well as field work - to accomplish the evaluation of the units by employing sketch lists. To achieve this, we selected several techniques in order to identify and classify different types of existing problems as erosion, landslide in embankments and fill slopes, rockfall, block rolling, among others. We also included the analysis of soil horizon, thickness and composition. The geological-geotechnical mapping resulted in six units: 1- Sandstones in cuesta’s backhill; 2 – Basalts in cuesta’s front; 3- Sandstones in cuesta’s front; 4 – Talus and colluvial deposits at cuesta’s foothill; 5- Sandstones of the Piramboia Formation in hillside; and 6 – Colluvial soil in the hill top. A characterization of the geological-geotechnical units is detailed, coupled to the cartographic material. Other cartographic products elaborated for this study included 1:10.000 maps of hypsometry, slope and curvature