739 resultados para VOLTAGES
Resumo:
This paper proposes a control method that can balance the input currents of the three-phase three-wire boost rectifier under unbalanced input voltage condition. The control objective is to operate the rectifier in the high-power-factor mode under balanced input voltage condition but to give overriding priority to the current balance function in case of unbalance in the input voltage. The control structure has been divided into two major functional blocks. The inner loop current-mode controller implements resistor emulation to achieve high-power-factor operation on each of the two orthogonal axes of the stationary reference frame. The outer control loop performs magnitude scaling and phase-shifting operations on current of one of the axes to make it balanced with the current on the other axis. The coefficients of scaling and shifting functions are determined by two closed-loop prportional-integral (PI) controllers that impose the conditions of input current balance as PI references. The control algorithm is simple and high performing. It does not require input voltage sensing and transformation of the control variables into a rotating reference frame. The simulation results on a MATLAB-SIMULINK platform validate the proposed control strategy. In implementation Texas Instrument's digital signal processor TMS320F24OF is used as the digital controller. The control algorithm for high-power-factor operation is tested on a prototype boost rectifier under nominal and unbalanced input voltage conditions.
Resumo:
Bulk As-Te-Tl glasses belonging to the As30Te70-xTlx (4 <= x <= 22) and As40Te60-xTlx (5 <= x <= 20) composition tie lines are studied for their I-V characteristics. Unlike other As-Te-III glasses such as As-Te-Al and As-Te-In, which exhibit threshold behavior, the present samples show memory switching. The composition dependence of switching voltages (V-t) of As-Te-Tl glasses is also different from that of As-Te-Al and As-Te-In glasses, and it is found that V-t decreases with the addition of Tl. Both the type of switching exhibited by As-Te-Tl glasses and the composition dependence of V-t, seems to be intimately connected with the nature of bonding of Tl atoms and the resultant structural network. Furthermore, the temperature and thickness dependence of switching voltages of As-Te-Tl glasses suggest an electro thermal mechanism for switching in these samples.
Resumo:
Bulk Ge(17)Te83_,JI glasses (05x.5_13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage V-th) of Ge17Te83-xTlx glasses are found to decrease with increasing thallium content. The rate of decrease of Vtry is greater at lower concentrations and \textbackslashid, falls at a slower rate for higher thallium concentrations (x 6). The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge17Te83-xTlx glasses with increasing thallium concentration supports the idea of decrease in network connectivity with TI addition. The more metallic nature of TI also contributes to the observed reduction in the switching voltages of Ge17Te83-xTlx glasses with TI content. Further, there is an interesting correlation seen between the threshold voltage V-th and the average bond energy, as a function of TI content. In addition, the switching voltages of Ge17Te83-xTlx glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge17Te83-xTl2 sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles. (C) 2010 Elsevier B.V. All rights reserved.
Resumo:
The effect of aluminosilicate (Al2SiO5) on the upturn characteristics of ZnO varistor ceramics has been investigated. Addition of Al2SiO5 shifts the point of upturn above 10(4) A cm(-2). The extended nonlinearity in the high current density region is better correlatable to the presence of higher density of trap stales and changing pattern of trap depths at the grain boundary interface as much as the grain interior conductivity. Microstructure studies show the formation and involvement of a liquid phase during sintering. The secondary phases, predominantly are antimony spinel, Zn7Sb2O12, zinc silicate, Zn2SiO4 and magnesium aluminium silicate. MgAl2Si3O10. Energy dispersive X-ray analyses (EDAX) show that Al and Si are distributed more in the grain boundaries and within the secondary phases than in the grain interiors. Capacitance-voltage analyses and dielectric dispersion studies indicate the presence of negative capacitance and associated resonance, indicative of the oscillatory charge redistribution involving increased trapping at the interface states. The admittance spectroscopy data show that the type of trap slates remains unaltered whereas the addition of Al2SiO5 increases the density of low energy traps. (C) 1997 Published by Elsevier Science S.A.
Resumo:
ASTM D2303 standard provides a method for evaluating the tracking and erosion resistance of polymeric insulators under ac voltages. In this paper, the above method has been extended for evaluating the performance of the insulators under dc stresses. Tests were conducted on polymeric silicone rubber (SR) insulators under positive and negative dc stresses. Micron sized Alumina trihydrate (uATH) and nano sized Alumina (nALU) were used as fillers in SR matrix to improve the resistance to tracking and erosion. Results suggest that SR composites perform better under negative dc than under positive dc voltages. Eroded mass and leakage current data support the above result. Samples with low concentration of nano alumina fillers performed on par with the samples with large loadings of uATH.
Resumo:
A preliminary attempt has been made to study the time domain characteristics of the induced voltage and current on the rocket and its exhaust plume (ionized trail) when it is coupled with the transient electromagnetic field generated by a nearby lightning discharge. For the computation, finite difference time domain (FDTD) technique has been used where the object is assumed to be a finite vertical nonuniform transmission line above a perfectly conducting ground. It is seen that the amplitude of the first peak of the induced voltage and current at the mid point of the object is 23.5 kV and 4.9 kA respectively.
A Novel VSI- and CSI-Fed Active-Reactive Induction Motor Drive with Sinusoidal Voltages and Currents
Resumo:
Till date load-commutated inverter (LCI)-fed synchronous motor drive configuration is popular in high power applications (>10 MW). The leading power factor operation of synchronous motor by excitation control offers this simple and rugged drive structure. On the contrary, LCI-fed induction motor drive is absent as it always draws lagging power factor current. Therefore, complicated commutation circuit is required to switch off thyristors for a current source inverter (CSI)-driven induction motor. It poses the major hindrance to scale up the power rating of CSI-fed induction motor drive. Anew power topology for LCI-fed induction motor drive for medium-voltage drive application is proposed. A new induction machine (active-reactive induction machine) with two sets of three-phase winding is introduced as a drive motor. The proposed power configuration ensures sinusoidal voltage and current at the motor terminals. The total drive power is shared among a thyristor-based LCI, an insulated gate bipolar transistor (IGBT)-based two-level voltage source inverter (VSI), and a three-level VSI. The benefits of SCRs and IGBTs are explored in the proposed drive. Experimental results from a prototype drive verify the basic concepts of the drive.
Resumo:
A method has been suggested for the measurement of prebreakdown currents under a.c. conditions. Measurements were made using hemispherical stainless steel electrodes and currents from 10~3 A down to 10~7 A have been measured.
Resumo:
In order to improve the tracking and erosion performance of outdoor polymeric silicone rubber (SR) insulators used in HV power transmission lines, micron sized inorganic fillers are usually added to the base SR matrix. In addition, insulators used in high voltage dc transmission lines are designed to have increased creepage distance to mitigate the tracking and erosion problems. ASTM D2303 standard gives a procedure for finding the tracking and erosion resistance of outdoor polymeric insulator weathershed material samples under laboratory conditions for ac voltages. In this paper, inclined plane (IP) tracking and erosion tests similar to ASTM D2303 were conducted under both positive and negative dc voltages for silicone rubber samples filled with micron and nano sized particles to understand the phenomena occurring during such tests. Micron sized Alumina Trihydrate (ATH) and nano sized alumina fillers were added to silicone rubber matrix to improve the resistance to tracking and erosion. The leakage current during the tests and the eroded mass at the end of the tests were monitored. Scanning Electron Microscopy (SEM) and Energy dispersive Xray (EDX) studies were conducted to understand the filler dispersion and the changes in surface morphology in both nanocomposite and microcomposite samples. The results suggest that nanocomposites performed better than microcomposites even for a small filler loading (4%) for both positive and negative dc stresses. It was also seen that the tracking and erosion performance of silicone rubber is better under negative dc as compared to positive dc voltage. EDX studies showed migration of different ions onto the surface of the sample during the IP test under positive dc which has led to an inferior performance as compared to the performance under negative dc.
Resumo:
Multilevel inverters with dodecagonal (12-sided polygon) voltage space vector (SV) structures have advantages like extension of linear modulation range, elimination of fifth and seventh harmonics in phase voltages and currents for the full modulation range including extreme 12-step operation, reduced device voltage ratings, lesser dv/dt stresses on devices and motor phase windings resulting in lower EMI/EMC problems, and lower switching frequency-making it more suitable for high-power drive applications. This paper proposes a simple method to obtain pulsewidth modulation (PWM) timings for a dodecagonal voltage SV structure using only sampled reference voltages. In addition to this, a carrier-based method for obtaining the PWM timings for a general N-level dodecagonal structure is proposed in this paper for the first time. The algorithm outputs the triangle information and the PWM timing values which can be set as the compare values for any carrier-based hardware PWM module to obtain SV PWM like switching sequences. The proposed method eliminates the need for angle estimation, computation of modulation indices, and iterative search algorithms that are typical in multilevel dodecagonal SV systems. The proposed PWM scheme was implemented on a five-level dodecagonal SV structure. Exhaustive simulation and experimental results for steady-state and transient conditions are presented to validate the proposed method.
High-Performance, Low-Operating-Voltage Organic Field-Effect Transistors with Low Pinch-Off Voltages