EPR studies on donor doped BaTiO3 grain boundary layer ceramic dielectrics

Donor doped BaTiO3 ceramics become insulating5 under controlled conditions with effective dielectric constants >10. The changes in EPR signals indicate that a certain fraction of the donor doped BaTiO3 is cubic even at room temperature and that the cubic fraction increases with the donor content. X-ray powder diffraction data support the EPR results. The coexistence of both the phases over a range of temperature is characteristic of diffused phase transition. The effect of grain size variation on EPR signal intensities indicate that the boundary layers surrounding the grains may constitute the cubic phase as a result of higher Ba-vacancies and donor contents at the grain boundary layer than in the bulk. Since the acceptor states arising from the Ba-vacancies and the impurities are activated in the cubic phase, they capture electrons from the conduction band, rendering the cubic phase electrically more insulating than the semiconductive tetragonal grain interiors. Thus, the cubic grain boundary layers act as effective dielectric media where the field tends to concentrate.

Evolution of Grain-Boundary Microstructure and Texture in Interstitial-Free Steel Processed by Equal-Channel Angular Extrusion

The equal-channel angular extrusion (ECAE) of Ti-bearing interstitial-free (IF) steel was performed following two different routes, up to four passes, at a temperature of 300 degrees C. The ECAE led to a grain refinement to submicron size. After the second pass, the grain size attained saturation thereafter. The microstructural analysis indicated the presence of coincident-site lattice (CSL) boundaries in significant fraction, in addition to a high volume fraction of high-angle random boundaries and some low-angle boundaries after the deformation. Among the special boundaries, Sigma 3 and Sigma 13 were the most prominent ones and their fraction depended on the processing route followed. A deviation in the misorientation angle distribution from the Mackenzie distribution was noticed. The crystallographic texture after the first pass resembled that of simple shear, with the {112}, {110}, and {123} aligned to the macroscopic shear plane.

Lowering grain boundary resistance of BaZr0.8Y0.2O3−δ with LiNO3 sintering-aid improves proton conductivity for fuel cell operation

A novel sintering additive based on LiNO3 was used to overcome the drawbacks of poor sinterability and low grain boundary conductivity in BaZr0.8Y0.2O3-δ (BZY20) protonic conductors. The Li-additive totally evaporated during the sintering process at 1600°C for 6 h, which led to highly dense BZY20 pellets (96.5% of the theoretical value). The proton conductivity values of BZY20 with Li sintering-aid were significantly larger than the values reported for BZY sintered with other metal oxides, due to the fast proton transport in the "clean" grain boundaries and grain interior. The total conductivity of BZY20-Li in wet Ar was 4.45 × 10-3 S cm-1 at 600°C. Based on the improved sinterability, anode-supported fuel cells with 25 μm-thick BZY20-Li electrolyte membranes were fabricated by a co-firing technique. The peak power density obtained at 700°C for a BZY-Ni/BZY20-Li/La0.6Sr0.4Co0.2Fe 0.8O3-δ (LSCF)-BZY cell was 53 mW cm-2, which is significantly larger than the values reported for fuel cells using electrolytes made of BZY sintered with the addition of ZnO and CuO, confirming the advantage of using Li as a sintering aid.

Grain boundary sliding during diffusion and dislocation creep in a Mg-0.7 pct Al alloy

Early studies on grain boundary sliding (GBS) in Mg alloys have suggested frequently that the contribution of GBS to creep is high even under conditions corresponding to dislocation creep. The role of creep strain and grain size in influencing the experimental measurements has not been clearly identified. Grain boundary sliding measurements were conducted in detail over experimental conditions corresponding to diffusion creep as well as dislocation creep in a single-phase Mg-0.7 wt pet Al alloy. The results indicated clearly that the GBS contribution to creep was Very high during,, diffusion creep at low stresses (similar to 75 pct) and substantially reduced during dislocation creep at high stresses (similar to 15 pct). These measurements were consistent with the observation of significant intragranular slip band activity observed in most grains at high stresses and very little slip band activity at low stresses. The experimental measurements and analysis indicated also that the GBS contribution to creep was high during the initial stages of creep and decreased to a steady-state value at large strains.

A Novel Method for the Uniform Incorporation of Grain-Boundary Layer Modifiers in Positive Temperature Coefficient of Resistivity Barium Titanate

The presently developed two-stage process involves diping the prefired porous disks of n-BaTiO3 in nonaqueous solutions containing Al-buty rate, Ti-isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain-boundary layer (GBL) modifiers (Al2O3+ TiO2+ SiO2) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrations (< 1%).

Hydrodynamics of the Renn-Lubensky twist grain boundary phase, and the decoupled lamellar phase

The long-wavelength hydrodynamics of the Renn-Lubensky twist grain boundary phase with grain boundary angle 2pialpha, alpha irrational, is studied. We find three propagating sound modes, with two of the three sound speeds vanishing for propagation orthogonal to the grains, and one vanishing for propagation parallel to the grains as well. In addition, we find that the viscosities eta1, eta2, eta4, and eta5 diverge like 1/Absolute value of omega as frequency omega --> 0, with the divergent parts DELTAeta(i) satisfying DELTAeta1DELTAeta4=(DELTAeta5)2, exactly. Our results should also apply to the predicted decoupled lamellar phase.

Influence of grain boundary sliding on diffusion in yttria doped zirconia

Grain boundary sliding during high temperature deformation can lead to stress concentrations and an enhancement of diffusion in mobile boundaries. Experiments were conducted on a fine grained 3 mol% yttria stabilized tetragonal zirconia, under conditions associated with superplastic flow involving grain boundary sliding. Tracer diffusion studies under creep conditions and without load indicate that there is no enhancement in either the lattice or grain boundary diffusivities. The experimental creep data are consistent with an interface controlled diffusion creep mechanism. (C) 2011 Elsevier Ltd. All rights reserved.

The two-step positive temperature coefficient in resistance characteristics of n-(Ba,Pb)TiO3 ceramics created through inclusion of grain boundary modifier additives

Donor-doped n-(Ba,Pb)TiO3 polycrystalline ceramics exhibit distinctly two-step positive temperature coefficient of resistance (PTCR) characteristics when formulated with suitable combinations of B2O3 and Al2O3 as grain boundary modifiers by heterogeneous addition. B2O3 or Al2O3 when added singularly resulted in either steep or broad PTCR jumps respectively across the phase transition. The two-step PTCR is attributed to the activation of the acceptor states, created through B2O3 and Al2O3, for various temperature regimes above the Curie point (T-c). The changing pattern of trap states is evident from the presence of Ti4+-O--Al3+ type hole centres in the grain boundary layer regions, identified in the electron paramagnetic resonance (EPR) spectra. That charge redistribution occurs among the inter-band gap defect states on crossing the Curie temperature is substantiated by the temperature coefficient in the EPR results. Capacitance-voltage results clearly show that there is an increase in the density of trap states with the addition of B2O3 and Al2O3. The spread in energy values of these trap states is evident from the large change in barrier height (phi similar or equal to 0.25-0.6 eV) between 500 and 650 K.

Study of magnetoresistance and conductance of bicrystal grain boundary in La0.67Ba0.33MnO3 thin film

La0.67Ba0.33MnO3 (LBMO) thin film is deposited on a 36.7degrees SrTiO3 bicrystal substrate using laser ablation technique. A microbridge is created across bicrystal grain boundary and its characteristics are compared with a microbridge on the LBMO film having no grain boundary. Presence of grain boundary exhibits substantial magnetoresistance ratio (MRR) in the low field and low temperature region. Bicrystal grain boundary contribution in MRR disappears at temperature T > 175 K. At low temperature, I-V characteristic of the microbridge across bicrystal grain boundary is nonlinear. Analysis of temperature dependence of dynamic conductance-voltage characteristics of the bicrystal grain boundary indicates that at low temperatures (T < 175 K) carrier transport across the grain boundary in LBMO film is dominated by inelastic tunneling via pairs of manganese atoms and tunneling through disordered oxides. At higher temperatures (T > 175 K), magnetic scattering process is dominating. Decrease of bicrystal grain boundary contribution in magnetoresistance with the increase in temperature is due to enhanced spin-flip scattering process.

Texture and grain boundary character distribution during Equal Channel Angular Extrusion of some two-phase copper alloys

In the present work, a thorough investigation of evolution of microstructure and texture has been carried out to elucidate the evolution of texture and grain boundary character distribution (GBCD) during Equal Channel Angular Extrusion (ECAE) of some model two-phase materials, namely Cu-0.3Cr and Cu-40Zn. Texture of Cu-0.3Cr alloy is similar to that reported for pure copper. On the other hand, in Cu-40Zn alloy, texture evolution in α and β (B2) phases are interdependent. In Cu-0.3Cr alloy, there is a considerable decreases in volume fraction of low angle boundaries (LAGBs), only a slight increase in CSL boundaries, but increase in high angle grain boundaries (HAGBs) from 1 pass to 4 passes for both the routes. In the case of Cu-40Zn alloy, there is an appreciable increase in CSL volume fraction.

Interrelation of grain boundary microstructure and texture in a hot rolled Ni-rich NiTi alloy

This investigation deals with the evolution of grain boundary microstructure and crystallographic texture during hot rolling of a Ni-rich NiTi alloy. Electron backscattered diffraction studies revealed the occurrence of several coincidence site lattice (CSL) boundaries. The origin of these boundaries has been identified. The crystallographic texture of the deformed sample consists mainly of (1 1 1)parallel to normal direction fiber. The texture components on the fiber exhibit some correlation with the type of CSL boundary. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Grain growth and grain boundary dynamics in colloidal polycrystals

Grain boundary dynamics and grain growth play a pivotal role in the fabrication of functional polycrystalline materials. However, not much is known about the delicate interplay between various microscopic processes that drive grain boundary motion which eventually culminates in the desired grain morphology. Colloidal systems are ideally suited to bridge the gap between the microscopic and macroscopic processes underlying grain growth, since their dynamics can be followed in real space and real time with single-particle resolution. The present review aims at highlighting contributions from colloid experiments that have led to a holistic understanding of grain growth in polycrystalline materials.

On the absence of shear cracking and grain boundary cavitation in secondary tensile regions of Ti-6Al-4V-0.1B alloy during hot (alpha plus beta)-compression

Deformation instabilities, such as shear cracking and grain boundary cavitation, which are observed in the secondary tensile region of Ti-6Al-4V alloy during compressive deformation in the (+)-phase field, do not form in Ti-6Al-4V-0.1B alloy when processed under the same conditions. This has been attributed to the microstructural modifications, e.g. the absence of grain boundary and adjacent grain boundary retained layers and a lower proportion of 90(o)-misoriented -colonies that occur with boron addition.

A Constitutive Equation for Grain Boundary Sliding: An Experimental Approach

Although grain boundary sliding (GBS) has been recognized as an important process during high-temperature deformation in crystalline materials, there is paucity in experimental data for characterizing a constitutive equation for GBS. High-temperature tensile creep experiments were conducted, together with measurements of GBS at different strains, stresses, grain sizes, and temperatures. Experimental data obtained on a Mg AZ31 alloy demonstrate that, for the first time, dynamic recrystallization during creep does not alter the contribution of GBS to creep during high-temperature deformation. The experimentally observed invariance of the sliding contribution with strain was used together with the creep data for developing a constitutive equation for GBS in a manner similar to the standard creep equation. Using this new approach, it is demonstrated that the stress, grain size, and temperature dependence for creep and GBS are identical. This is rationalized by a model based on GBS controlled by dislocations, within grains or near-grain boundaries. (C) The Minerals, Metals & Materials Society and ASM International 2013

Suppression of grain boundary relaxation in Zr-doped BiFeO3 thin films

Here, we present the results of temperature dependent dielectric studies on chemical solution processed Zr-doped BiFeO3 (BFO) thin films deposited on Pt/Si substrates. We find that in contrast to the undoped BFO films, Zr doping at Fe-site suppresses the low frequency dielectric relaxation originating from the grain boundaries, attributed to the increased dipolar rigidity due to stronger Zr-O bonds. Temperature dependent dc conductivity obtained from impedance and modulus analyses shows two distinct conduction processes occurring inside the grains. At temperature below similar to 423K, conductivity is nearly temperature independent, while in the high temperature regime (above similar to 423K), conduction is governed by the long range movement of oxygen vacancies with an activation energy of similar to 1eV. (C) 2014 AIP Publishing LLC.