Single-ionization of helium at Ti:sapphire wavelengths: rates and scaling laws

We present a numerical and theoretical study of intense-field single-electron ionization of helium at 390 nm and 780 nm. Accurate ionization rates (over an intensity range of (0.175-34) X10^14 W/ cm^2 at 390 nm, and (0.275 - 14.4) X 10^14 W /cm^2 at 780 nm) are obtained from full-dimensionality integrations of the time-dependent helium-laser Schroedinger equation. We show that the power law of lowest order perturbation theory, modified with a ponderomotive-shifted ionization potential, is capable of modelling the ionization rates over an intensity range that extends up to two orders of magnitude higher than that applicable to perturbation theory alone. Writing the modified perturbation theory in terms of scaled wavelength and intensity variables, we obtain to first approximation a single ionization law for both the 390 nm and 780 nm cases. To model the data in the high intensity limit as well as in the low, a new function is introduced for the rate. This function has, in part, a resemblance to that derived from tunnelling theory but, importantly, retains the correct frequency-dependence and scaling behaviour derived from the perturbative-like models at lower intensities. Comparison with the predictions of classical ADK tunnelling theory confirms that ADK performs poorly in the frequency and intensity domain treated here.

Theory of laser-driven double-ionization of atoms at Ti : sapphire laser wavelengths

Progress in the theoretical understanding of non-sequential double-ionization of atoms is reviewed from its beginnings with Kuchiev's work in the late 1980s and Corkum's work in the early 1990s to the present day. The crucial role of laboratory experiment as a persistent stimulus to theoretical endeavour is underlined but the predictive roles of simple, yet fundamental, theory and also of a full quantum mechanical description are not forgotten. A theoretical forward look is provided.

Enhanced He-α emission from ‘smoked’ Ti targets irradiated with 400nm 45fs laser pulses

We present a study of He-like 1s(2)-1s2p line emission from solid and low-density Ti targets under similar or equal to 45 fs laser pulse irradiation with a frequency doubled Ti: Sapphire laser. By varying the beam spot, the intensity on target was varied from 10(15) W/cm(2) to 10(19) W/cm(2). At best focus, low density "smoked" Ti targets yield similar to 20 times more He-alpha than the foil targets when irradiated at an angle of 45 degrees with s-polarized pulses. The duration of He-alpha emission from smoked targets, measured with a fast streak camera, was similar to that from Ti foils.

K alpha yields from Ti foils irradiated with ultrashort laser pulses

We have studied the emission of Kalpha radiation from Ti foils irradiated with ultrashort (45 fs) laser pulses. We utilized the fundamental (800 nm) light from a Ti:sapphire laser on bare foils and foils coated with a thin layer of parylene E (CH). The focusing was varied widely to give a range of intensities from approximately 10(15)-10(19) W cm(-2). Our results show a conversion efficiency of laser to Kalpha energy of similar to 10(-4) at tight focus for both types of targets. In addition, the coated targets exhibited strong secondary peaks of conversion at large defocus, which we believe are due to modification of the extent of preformed plasma due to the dielectric nature of the plastic layer. This in turn affects the level of resonance absorption. A simple model of Kalpha production predicts a much higher conversion than seen experimentally and possible reasons for this are discussed.

Ablação de esmalte e dentina bovinos e humanos com laser de Ti:safira no regime de femtossegundos: análises morfológicas e fisico-químicas comparativas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influence of non-stoichiometric defects on nonlinear absorption and refraction in Nd:Zn co-doped lithium niobate

Nonlinear absorption and refraction phenomena in stoichiometric lithium niobate (SLN) pure and co-doped with Zn and Nd, and congruent lithium niobate (CLN) were investigated using Z-scan technique. Femtosecond laser pulses from Ti:Sapphire laser (800 nm, 110 fs pulse width and 1 kHz repetition rate) were utilized for the experiment. The process responsible for nonlinear behavior of the samples was identified to be three photon absorption (3PA). This is in agreement with the band gap energies of the samples obtained from the linear absorption cut off and the slope of the plot of Ln(1 − TOA) vs. Ln(I0) using Sutherland’s theory (s = 2.1, for 3PA). The nonlinear refractive index (n2) of Zn doped samples was found to be lower than that of pure samples. Our experiments show that there exists a correlation between the nonlinear properties and the stoichiometry of the samples. The values of n2 fall into the same range as those obtained for the materials of similar band gap.

Multiphoton absorption in CsLiB6O10 with femtosecond infrared laser pulses

Nonlinear absorption and refraction characteristics of cesium lithium borate (CsLiB6O10) crystal have been studied using Z-scan technique. Ti:sapphire laser with 110 fs pulse width operating at 800 nm wavelength and pulse repetition rate of 1 kHz is used as the source of photons. Intensity of the laser pulse is varied from 0.541 to 1.283 T W/cm2 to estimate the intensity dependence of multiphoton absorption coefficients. Using the theory of multiphoton absorption proposed by Sutherland [ Handbook of Nonlinear Optics, in 2nd ed., edited by D. G. McLean and S. Kirkpatrick, Dekker, New York (2003) ], found that open aperture Z-scan data fit well for the five-photon absorption (5PA) process. 5PA coefficients are obtained by fitting the expressions into the open aperture experimental data for various peak intensities (I00). The nonlinear refractive index n2 estimated from closed aperture Z-scan experiment is 1.075×10−4 cm2/T W at an input peak intensity of 0.723 T W/cm2. The above experiment when repeated with a 532 nm, 6 ns pulsed laser led to an irreversible damage of the sample resulting in an asymmetric open aperture Z-scan profile. This indicates that it is not possible to observe multiphoton absorption in this regime of pulse width using 532 nm laser.

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.

Regenerative amplifier with continuously variable pulse duration used in an optical parametric chirped-pulse amplification laser system for synchronous pumping

A Nd:glass regenerative amplifier has been set up to generate the pumping pulse with variable pulse width for an optical parametric chirped-pulse amplification (OPCPA) laser system. Each pulse of the pulse train from a cw self-mode-locking femtosecond Ti:sapphire oscillator is stretched to approximate to300 ps at 1062 nm to be split equally and injected into a nonlinear crystal and the Nd:glass regenerative amplifier, as the chirped signal pulse train and the seed pulse train of the pumping laser system, respectively. By adjusting the cavity length of the regenerative amplifier directly, the width of amplified pulse could be varied continuously from approximate to300 ps to approximate to3 ns. The chirped signal pulse for the OPCPA laser system and the seed pulse for the pumping laser system come from the same oscillator, so that the time jitter between the signal pulse and the pumping pulse in optical parametric amplification stages could be <10 ps. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Diffraction integral formulas of the pulsed wave field in the temporal domain

To resolve the diffraction problems of the pulsed wave field directly in the temporal domain, we extend the Rayleigh diffraction integrals to the temporal domain and then discuss the approximation condition of this diffraction formula. (C) 1997 Optical Society of America.

变形镜对千赫兹掺钛蓝宝石飞秒激光频谱相位补偿

尝试用光谱展宽的方法从频谱相位(而非时域相位)的角度利用变形反射镜来补偿1kHz飞秒激光系统输出光路的频谱相位畸变，从而提高飞秒激光脉冲的时域强度衬比度，改善其光束质量。频谱相位补偿实验是在一台1kHz掺钛蓝宝石飞秒激光系统输出光路中，针对超短脉冲光束通过传输介质后的频谱相位畸变，引入变形反射镜进行补偿。应用频谱相位干涉直接电场重构(SPIDER)方法和仪器作为测量手段，建立了一套相位测量补偿系统。实验结果表明用变形反射镜可使激光脉冲的相位畸变得到较好的补偿，脉冲的光束质量得到改善。这种方法的主要思想就是