ac conductivity and conduction mechanism of NaNbO3 semiconductor antiferroelectric ceramic: A relaxational approach at high temperature

The electric properties of the sodium niobate perovskite ceramic were investigated by impedance spectroscopy in the frequency range from 5 Hz to 13 MHz and from room temperature up to 1073 K, in a thermal cycle. Both capacitance and conductivity exhibit an anomaly at around 600 K as a function of the temperature and frequency. The electric conductivity as a function of angular frequency sigma(omega) follows the relation sigma(omega)=Aomega(s). The values of the exponent s lie in the range 0.15less than or equal tosless than or equal to0.44. These results were discussed considering the conduction mechanism as being a type of polaron hopping. (C) 2003 American Institute of Physics.

Ferroelectric state analysis in grain boundary of Na0.85Li0.15NbO3 ceramic

The electric and dielectric properties of the grain boundary of Na0.85Li0.15NbO3 lead-free ferroelectric-semiconductor perovskite were investigated. The impedance spectroscopy was carried out as a function of a thermal cycle. The sodium lithium niobate was synthesized by a chemical route based on the evaporation method. Dense ceramic, relative density of 97%, was prepared at 1423 K for 2 h in air atmosphere. ac measurements were carried out in the frequency range of 5 Hz-13 MHz and from 673 to 1023 K. Theoretical adjust of the impedance data was performed to deriving the electric parameters of the grain boundary. The electric conductivity follows the Arrhenius law, with activation energy values equal to 1.55 and 1.54 eV for heating and cooling cycle, respectively. The nonferroelectric state of the grain boundary and its correlation with symmetry are discussed in the temperature domain. (C) 2003 American Institute of Physics.

Cogeneration system design optimization

Cogeneration system design deals with several parameters in the synthesis phase, where not only a thermal cycle must be indicated but the general arrangement, type, capacity and number of machines need to be defined. This problem is not trivial because many parameters are considered as goals in the project. An optimization technique that considers costs and revenues, reliability, pollutant emissions and exergetic efficiency as goals to be reached in the synthesis phase of a cogeneration system design process is presented. A discussion of appropriated values and the results for a pulp and paper plant integration to a cogeneration system are shown in order to illustrate the proposed methodology.

Cogeneration system design optimization

Cogeneration system design deals with several parameters in the synthesis phase, where not only a thermal cycle must be indicated but the general arrangement, type, capacity and number of machines need to be defined. This problem is not trivial because many parameters are considered as goals in the project. An optimization technique that considers costs and revenues, reliability, pollutant emissions and exergetic efficiency as goals to be reached in the synthesis phase of a cogeneration system design process is presented. A discussion of appropriated values and the results for a pulp and paper plant integration to a cogeneration system are shown in order to illustrate the proposed methodology.

Efeito da variação do período do polimento na rugosidade superficial e na manutenção do polimento de diferentes resinas compostas

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Avaliação de propriedades mecânicas de peças pré-moldadas submetidas à cura térmica pelo método da maturidade: estudo de caso

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phase transitions and interface phenomena in the cryogenic temperature domain of a niobate nanostructured ceramic

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Análise de ciclo avançado com seqüestro de carbono

The energy is considered one of the most important elements in the human´s life providing the survival as well as the well being. Nowadays, the technologies destined to generate power burn fossil fuels which pour gases (carbon dioxide among them) that contribute to the global warming phenomenon. Several research groups and universities have been studying different methods for generating power with low carbon dioxide emissions, including the possibility of burning zero-carbon fuels. In this text, it has been put attention to the Advanced Zero Emission Power Plants (AZEP) which separate the CO2 (from the gases involved in the power generation), compress it, dehydrate it and store it in appropriate reservoirs. The goal of this study was to find a possible solution to produce CO from CO2, activated by solar energy; the reaction between CO and steam generates a syngas comprised of H2 and CO2, which can be separated by chemical and/or physical processes. The text also contains a study concerning the compressed air energy storage power plant (CAES) and come up with its modification to C[CO2]ES. This power plant stores CO2 directing it to a reverse combustion process to produce CO which is headed to a syngas reactor to produce CO2 and H2. Hydrogen is separated and carried to the thermal cycle to generate power with low carbon emissions

Effects of cryogenic and stress relief treatments on temper carbide precipitation in AISI D2 tool steel

The effects of cryogenic and stress relief treatments on temper carbide precipitation in the cold work tool steel AISI D2 were studied. For the cryogenic treatment the temperature was −196°C and the holding time was 2, 24 or 30 h. The stress relief heat treatment was carried at 130°C/90 min, when applied. All specimens were compared to a standard thermal cycle. Specimens were studied using metallographic characterisation, X-ray diffraction and thermoelectric power measurements. The metallographic characterisation used SEM (scanning electron microscopy) and SEM-FEG (SEM with field emission gun), besides OM (optical microscopy). No variation in the secondary carbides (micrometre sized) precipitation was found. The temper secondary carbides (nanosized) were found to be more finely dispersed in the matrix of the specimens with cryogenic treatment and without stress relief. The refinement of the temper secondary carbides was attributed to a possible in situ carbide precipitation during tempering.

Trattamenti ad aria calda per la decontaminazione superficiale delle uova in guscio

In order to improve the animal welfare, the Council Directive 1999/74/EC (defining minimum standards for the welfare of laying hens) will ban conventional cage systems since 2012, in favour of enriched cages or floor systems. As a consequence an increased risk of bacterial contamination of eggshell is expected (EFSA, 2005). Furthermore egg-associated salmonellosis is an important public health problem throughout the world (Roberts et al., 1994). In this regard the introduction of efficient measures to reduce eggshell contamination by S. Enteritidis or other bacterial pathogens, and thus to prevent any potential or additional food safety risk for Human health, may be envisaged. The hot air pasteurization can be a viable alternative for the decontamination of the surface of the egg shell. Few studies have been performed on the decontamination power of this technique on table eggs (Hou et al, 1996; James et al., 2002). The aim of this study was to develop innovative techniques to remove surface contamination of shell eggs by hot air under natural or forced convection. Initially two simplified finite element models describing the thermal interaction between the air and egg were developed, respectively for the natural and forced convection. The numerical models were validated using an egg simulant equipped by type-K thermocouple (Chromel/Alumel). Once validated, the models allowed the selection of a thermal cycle with an inner temperature always lower than 55°C. Subsequently a specific apparatus composed by two hot air generators, one cold air generator and rolling cylinder support, was built to physically condition the eggs. The decontamination power of the thermal treatments was evaluated on shell eggs experimentally inoculated with either Salmonella Enteritidis, Escherichia coli, Listeria monocytogenes and on shell eggs containing only the indigenous microflora. The applicability of treatments was further evaluated by comparing quality traits of treated and not treated eggs immediately after the treatment and after 28 days of storage at 20°C. The results showed that the treatment characterized by two shots of hot air at 350°C for 8 sec, spaced by a cooling interval of 32 (forced convection), reduce the bacterial population of more than 90% (Salmonella enteritidis and Listeria monocytogenes). No statistically significant results were obtained comparing E. coli treated and not treated eggs as well as indigenous microflora treated and not treated eggs. A reduction of 2.6 log was observed on Salmonella enteritidis load of eggs immediately after the treatment in oven at 200°C for 200 minutes (natural convection). Furthermore no detrimental effects on quality traits of treated eggs were recorded. These results support the hot air techniques for the surface decontamination of table eggs as an effective industrial process.

Medida de la conductividad térmica con el método de la aguja térmica, basado en la fuente lineal de calor transitorio, para su aplicación en los cerramientos de adobes y bloques de tierra comprimida

Existe un creciente interés internacional por el ahorro energético y la sostenibilidad en la edificación con importantes repercusiones en la Arquitectura. La inercia térmica es un parámetro fundamental para poder valorar energéticamente un edificio en condiciones reales. Para ello es necesario cambiar el enfoque tradicional de transmisión de calor en régimen estacionario por otro en régimen dinámico en el que se analizan las ondas térmicas y el flujo de calor oscilante que atraviesan los cerramientos. Los parámetros que definen la inercia térmica son: el espesor, la difusividad y el ciclo térmico. A su vez la difusividad está determinada por la conductividad térmica, la densidad y el calor específico del material. De estos parámetros la conductividad es el más complejo, variable y difícil de medir, especialmente en los cerramientos de tierra debido a su heterogeneidad y complejidad higrotérmica. En general, los métodos de medida de la conductividad o transmitancias en los paramentos presentan inconvenientes a la hora de medir un edificio construido con tierra: dificultades de implementación, el elevado coste o la fiabilidad de los resultados, principalmente. El Método de la Aguja Térmica (MAT) se basa en el principio de la evolución en el tiempo del calor emitido por una fuente lineal al insertarse en el seno de un material. Se ha escogido este método porque resulta práctico, de bajo coste y de fácil aplicación a gran escala pero tiene serios problemas de fiabilidad y exactitud. En esta tesis se desarrolla un método de medida de la conductividad térmica para Piezas de Albañilería de Tierra Cruda en laboratorio basado en el MAT, se mejora su fiabilidad, se analiza su incertidumbre, se compara con otros métodos de referencia y se aplica en adobes, Bloques de Tierra Comprimida y probetas de tierra estabilizada con distintas proporciones de paja. Este método servirá de base a una posterior aplicación in situ. Finalmente se proponen modelos matemáticos para mejorar la exactitud del dispositivo utilizado y para la estimación de la conductividad de cerramientos de tierra en función de su densidad. Con los resultados obtenidos se analizan las posibilidades de amortiguación y retardo de las ondas térmicas y capacidad de almacenaje de energía de los cerramientos en función de su densidad y humedad. There is growing international interest in energy saving and sustainability in buildings with significant impact on Architecture. Thermal inertia is a key parameter to assess energy in buildings in real conditions. This requires changing the traditional approach to heat transfer in steady state by another in dynamic regime which analyzes the thermal waves and oscillating heat flux passing through the external walls. The parameters defining the thermal inertia are: the thickness, the diffusivity and the thermal cycle. In turn, the diffusivity is determined by the thermal conductivity, density and specific heat of the material. Of these parameters, thermal conductivity is the most complex, variable and difficult to measure, especially in earth walls due to their heterogeneity and hygrothermal complexity. In general, the methods of measurement of conductivity and transmittance in walls have drawbacks when measuring a building with earth: implementation difficulties, high cost, or reliability of the results, mainly. The Thermal Needle Procedure (TNP) is based on the principle of evolution in time of heat from a line source when inserted within a material. This method was chosen because it is a practical, low cost and easy to implement on a large scale but has serious problems of reliability and accuracy. This thesis develops a laboratory method for measuring the thermal conductivity of Masonry Units Unfire Earth-based based on TNP, its uncertainty is analyzed, compared to other reference methods and applies in adobes, Compressed Earth Blocks and stabilized soil specimens with different proportions of straw. This method will form the basis of a subsequent application in situ. Finally, mathematical models are proposed to improve the accuracy of the device used, and to estimate the conductivity of earth enclosures depending on its density. With the results obtained earth enclosures are analyzed to estimate their possibilities of delay and buffer of termal waves and energy storage capacity according to their density and moisture.

Technology and characterization of GaN-HEMTs devices: high temperature and trapping effects

Los transistores de alta movilidad electrónica basados en GaN han sido objeto de una extensa investigación ya que tanto el GaN como sus aleaciones presentan unas excelentes propiedades eléctricas (alta movilidad, elevada concentración de portadores y campo eléctrico crítico alto). Aunque recientemente se han incluido en algunas aplicaciones comerciales, su expansión en el mercado está condicionada a la mejora de varios asuntos relacionados con su rendimiento y habilidad. Durante esta tesis se han abordado algunos de estos aspectos relevantes; por ejemplo, la fabricación de enhancement mode HEMTs, su funcionamiento a alta temperatura, el auto calentamiento y el atrapamiento de carga. Los HEMTs normalmente apagado o enhancement mode han atraído la atención de la comunidad científica dedicada al desarrollo de circuitos amplificadores y conmutadores de potencia, ya que su utilización disminuiría significativamente el consumo de potencia; además de requerir solamente una tensión de alimentación negativa, y reducir la complejidad del circuito y su coste. Durante esta tesis se han evaluado varias técnicas utilizadas para la fabricación de estos dispositivos: el ataque húmedo para conseguir el gate-recess en heterostructuras de InAl(Ga)N/GaN; y tratamientos basados en flúor (plasma CF4 e implantación de F) de la zona debajo de la puerta. Se han llevado a cabo ataques húmedos en heteroestructuras de InAl(Ga)N crecidas sobre sustratos de Si, SiC y zafiro. El ataque completo de la barrera se consiguió únicamente en las muestras con sustrato de Si. Por lo tanto, se puede deducir que la velocidad de ataque depende de la densidad de dislocaciones presentes en la estructura, ya que el Si presenta un peor ajuste del parámetro de red con el GaN. En relación a los tratamientos basados en flúor, se ha comprobado que es necesario realizar un recocido térmico después de la fabricación de la puerta para recuperar la heteroestructura de los daños causados durante dichos tratamientos. Además, el estudio de la evolución de la tensión umbral con el tiempo de recocido ha demostrado que en los HEMTs tratados con plasma ésta tiende a valores más negativos al aumentar el tiempo de recocido. Por el contrario, la tensión umbral de los HEMTs implantados se desplaza hacia valores más positivos, lo cual se atribuye a la introducción de iones de flúor a niveles más profundos de la heterostructura. Los transistores fabricados con plasma presentaron mejor funcionamiento en DC a temperatura ambiente que los implantados. Su estudio a alta temperatura ha revelado una reducción del funcionamiento de todos los dispositivos con la temperatura. Los valores iniciales de corriente de drenador y de transconductancia medidos a temperatura ambiente se recuperaron después del ciclo térmico, por lo que se deduce que dichos efectos térmicos son reversibles. Se han estudiado varios aspectos relacionados con el funcionamiento de los HEMTs a diferentes temperaturas. En primer lugar, se han evaluado las prestaciones de dispositivos de AlGaN/GaN sobre sustrato de Si con diferentes caps: GaN, in situ SiN e in situ SiN/GaN, desde 25 K hasta 550 K. Los transistores con in situ SiN presentaron los valores más altos de corriente drenador, transconductancia, y los valores más bajos de resistencia-ON, así como las mejores características en corte. Además, se ha confirmado que dichos dispositivos presentan gran robustez frente al estrés térmico. En segundo lugar, se ha estudiado el funcionamiento de transistores de InAlN/GaN con diferentes diseños y geometrías. Dichos dispositivos presentaron una reducción casi lineal de los parámetros en DC en el rango de temperaturas de 25°C hasta 225°C. Esto se debe principalmente a la dependencia térmica de la movilidad electrónica, y también a la reducción de la drift velocity con la temperatura. Además, los transistores con mayores longitudes de puerta mostraron una mayor reducción de su funcionamiento, lo cual se atribuye a que la drift velocity disminuye más considerablemente con la temperatura cuando el campo eléctrico es pequeño. De manera similar, al aumentar la distancia entre la puerta y el drenador, el funcionamiento del HEMT presentó una mayor reducción con la temperatura. Por lo tanto, se puede deducir que la degradación del funcionamiento de los HEMTs causada por el aumento de la temperatura depende tanto de la longitud de la puerta como de la distancia entre la puerta y el drenador. Por otra parte, la alta densidad de potencia generada en la región activa de estos transistores conlleva el auto calentamiento de los mismos por efecto Joule, lo cual puede degradar su funcionamiento y Habilidad. Durante esta tesis se ha desarrollado un simple método para la determinación de la temperatura del canal basado en medidas eléctricas. La aplicación de dicha técnica junto con la realización de simulaciones electrotérmicas han posibilitado el estudio de varios aspectos relacionados con el autocalentamiento. Por ejemplo, se han evaluado sus efectos en dispositivos sobre Si, SiC, y zafiro. Los transistores sobre SiC han mostrado menores efectos gracias a la mayor conductividad térmica del SiC, lo cual confirma el papel clave que desempeña el sustrato en el autocalentamiento. Se ha observado que la geometría del dispositivo tiene cierta influencia en dichos efectos, destacando que la distribución del calor generado en la zona del canal depende de la distancia entre la puerta y el drenador. Además, se ha demostrado que la temperatura ambiente tiene un considerable impacto en el autocalentamiento, lo que se atribuye principalmente a la dependencia térmica de la conductividad térmica de las capas y sustrato que forman la heterostructura. Por último, se han realizado numerosas medidas en pulsado para estudiar el atrapamiento de carga en HEMTs sobre sustratos de SiC con barreras de AlGaN y de InAlN. Los resultados obtenidos en los transistores con barrera de AlGaN han presentado una disminución de la corriente de drenador y de la transconductancia sin mostrar un cambio en la tensión umbral. Por lo tanto, se puede deducir que la posible localización de las trampas es la región de acceso entre la puerta y el drenador. Por el contrario, la reducción de la corriente de drenador observada en los dispositivos con barrera de InAlN llevaba asociado un cambio significativo en la tensión umbral, lo que implica la existencia de trampas situadas en la zona debajo de la puerta. Además, el significativo aumento del valor de la resistencia-ON y la degradación de la transconductancia revelan la presencia de trampas en la zona de acceso entre la puerta y el drenador. La evaluación de los efectos del atrapamiento de carga en dispositivos con diferentes geometrías ha demostrado que dichos efectos son menos notables en aquellos transistores con mayor longitud de puerta o mayor distancia entre puerta y drenador. Esta dependencia con la geometría se puede explicar considerando que la longitud y densidad de trampas de la puerta virtual son independientes de las dimensiones del dispositivo. Finalmente se puede deducir que para conseguir el diseño óptimo durante la fase de diseño no sólo hay que tener en cuenta la aplicación final sino también la influencia que tiene la geometría en los diferentes aspectos estudiados (funcionamiento a alta temperatura, autocalentamiento, y atrapamiento de carga). ABSTRACT GaN-based high electron mobility transistors have been under extensive research due to the excellent electrical properties of GaN and its related alloys (high carrier concentration, high mobility, and high critical electric field). Although these devices have been recently included in commercial applications, some performance and reliability issues need to be addressed for their expansion in the market. Some of these relevant aspects have been studied during this thesis; for instance, the fabrication of enhancement mode HEMTs, the device performance at high temperature, the self-heating and the charge trapping. Enhancement mode HEMTs have become more attractive mainly because their use leads to a significant reduction of the power consumption during the stand-by state. Moreover, they enable the fabrication of simpler power amplifier circuits and high-power switches because they allow the elimination of negativepolarity voltage supply, reducing significantly the circuit complexity and system cost. In this thesis, different techniques for the fabrication of these devices have been assessed: wet-etching for achieving the gate-recess in InAl(Ga)N/GaN devices and two different fluorine-based treatments (CF4 plasma and F implantation). Regarding the wet-etching, experiments have been carried out in InAl(Ga)N/GaN grown on different substrates: Si, sapphire, and SiC. The total recess of the barrier was achieved after 3 min of etching in devices grown on Si substrate. This suggests that the etch rate can critically depend on the dislocations present in the structure, since the Si exhibits the highest mismatch to GaN. Concerning the fluorine-based treatments, a post-gate thermal annealing was required to recover the damages caused to the structure during the fluorine-treatments. The study of the threshold voltage as a function of this annealing time has revealed that in the case of the plasma-treated devices it become more negative with the time increase. On the contrary, the threshold voltage of implanted HEMTs showed a positive shift when the annealing time was increased, which is attributed to the deep F implantation profile. Plasma-treated HEMTs have exhibited better DC performance at room temperature than the implanted devices. Their study at high temperature has revealed that their performance decreases with temperature. The initial performance measured at room temperature was recovered after the thermal cycle regardless of the fluorine treatment; therefore, the thermal effects were reversible. Thermal issues related to the device performance at different temperature have been addressed. Firstly, AlGaN/GaN HEMTs grown on Si substrate with different cap layers: GaN, in situ SiN, or in situ SiN/GaN, have been assessed from 25 K to 550 K. In situ SiN cap layer has been demonstrated to improve the device performance since HEMTs with this cap layer have exhibited the highest drain current and transconductance values, the lowest on-resistance, as well as the best off-state characteristics. Moreover, the evaluation of thermal stress impact on the device performance has confirmed the robustness of devices with in situ cap. Secondly, the high temperature performance of InAlN/GaN HEMTs with different layouts and geometries have been assessed. The devices under study have exhibited an almost linear reduction of the main DC parameters operating in a temperature range from room temperature to 225°C. This was mainly due to the thermal dependence of the electron mobility, and secondly to the drift velocity decrease with temperature. Moreover, HEMTs with large gate length values have exhibited a great reduction of the device performance. This was attributed to the greater decrease of the drift velocity for low electric fields. Similarly, the increase of the gate-to-drain distance led to a greater reduction of drain current and transconductance values. Therefore, this thermal performance degradation has been found to be dependent on both the gate length and the gate-to-drain distance. It was observed that the very high power density in the active region of these transistors leads to Joule self-heating, resulting in an increase of the device temperature, which can degrade the device performance and reliability. A simple electrical method have been developed during this work to determine the channel temperature. Furthermore, the application of this technique together with the performance of electro-thermal simulations have enabled the evaluation of different aspects related to the self-heating. For instance, the influence of the substrate have been confirmed by the study of devices grown on Si, SiC, and Sapphire. HEMTs grown on SiC substrate have been confirmed to exhibit the lowest self-heating effects thanks to its highest thermal conductivity. In addition to this, the distribution of the generated heat in the channel has been demonstrated to be dependent on the gate-to-drain distance. Besides the substrate and the geometry of the device, the ambient temperature has also been found to be relevant for the self-heating effects, mainly due to the temperature-dependent thermal conductivity of the layers and the substrate. Trapping effects have been evaluated by means of pulsed measurements in AlGaN and InAIN barrier devices. AlGaN barrier HEMTs have exhibited a de crease in drain current and transconductance without measurable threshold voltage change, suggesting the location of the traps in the gate-to-drain access region. On the contrary, InAIN barrier devices have showed a drain current associated with a positive shift of threshold voltage, which indicated that the traps were possibly located under the gate region. Moreover, a significant increase of the ON-resistance as well as a transconductance reduction were observed, revealing the presence of traps on the gate-drain access region. On the other hand, the assessment of devices with different geometries have demonstrated that the trapping effects are more noticeable in devices with either short gate length or the gate-to-drain distance. This can be attributed to the fact that the length and the trap density of the virtual gate are independent on the device geometry. Finally, it can be deduced that besides the final application requirements, the influence of the device geometry on the performance at high temperature, on the self-heating, as well as on the trapping effects need to be taken into account during the device design stage to achieve the optimal layout.

TiN-based coatings on fuel cladding tubes for advanced nuclear reactors

Titanium nitride (TiN) thin films are coated on HT-9 and MA957 fuel cladding tubes and bars to explore their mechanical strength, thermal stability, diffusion barrier properties, and thermal conductivity properties. The ultimate goal is to implement TiN as an effective diffusion barrier to prevent the inter-diffusion between the nuclear fuel and the cladding material, and thus lead to a longer lifetime of the cladding tubes. Mechanical tests including hardness and scratch tests for the samples before and after thermal cycle tests show that the films have a high hardness of 28GPa and excellent adhesion properties despite the thermal treatment. Thermal conductivity measurements demonstrate that the thin TiN films have very minimal impact on the overall thermal conductivity of the MA957 and HT-9 substrates, i.e., the thermal conductivity of the uncoated HT-9 and MA957 substrates was 26.25 and 28.44 W m-1 K-1, and that of the coated ones was 26.21 and 28.38W m-1 K-1, respectively. A preliminary Ce diffusion test on the couple of Ce/TiN/HT-9 suggests that TiN has excellent material compatibility and good diffusion barrier properties.

Effect of cooling rate on intercritically reheated microstructure and toughness in high strength low alloy steel

High strength low alloy steels have been shown to be adversely affected by the existence of regions of poor impact toughness within the heat affected zone (HAZ) produced during multipass welding. One of these regions is the intercritically reheated coarse grained HAZ or intercritical zone. Since this region is generally narrow and discontinuous, of the order of 0.5 mm in width, weld simulators are often employed to produce a larger volume of uniform microstructure suitable for toughness assessment. The steel usedfor this study was a commercial quenched and tempered steel of 450 MN m -2 yield strength. Specimen blanks were subjected to a simulated welding cycle to produce a coarse grained structure of upper bainite during the first thermal cycle, followed by a second thermal cycle where the peak temperature T p2 was controlled. Charpy tests carried out for T p2 values in the range 650-850°C showed low toughness for T p2 values between 760 and 790°C, in the intercritical regime. Microstructural investigation of the development of grain boundary martensite-retained austenite (MA) phase has been coupled with image analysis to measure the volume fraction of MAformed. Most of the MA constituent appears at the prior austenite grain boundaries during intercritical heating, resulting in a 'necklace' appearance. For values of T p2 greater than 790°C the necklace appearance is lost and the second phase areas are observed throughout the structure. Concurrent with this is the development of the fine grained, predominantly ferritic structure that is associated with the improvement in toughness. At this stage the microstructure is transforming from the intercritical regime structure to the supercritically reheated coarse grained HAZ structure. The toughness improvement occurs even though the MA phase is still present, suggesting that the embrittlement is associated with the presence of a connected grain boundary network of the MA phase. The nature of the second phase particles can be controlled by the cooling rate during the second cycle and variesfrom MA phase at high cooling rates to a pearlitic structure at low cooling rates. The lowest toughness of the intercritical zone is observed only when MA phase is present. The reason suggested for this is that only the MA particles debond readily, a number of debonded particles in close proximity providing sufficient stress concentration to initiate local cleavage. © 1993 The Institute of Materials.

Estudo da influência da temperatura de brasagem nas uniões zircônia/aço inox 304 utilizando metalização mecânica

Metal-Ceramic (M/C) Zirconia-stainless steel interfaces have been processed through brazing techniques due to the excellent combination of properties such as high temperature stability, high corrosion resistance and good mechanical properties. However, some M/C interfaces show some defects, like porosity and cracks results in the degradation of the interfaces, leading even to its total rupture. Most of time, those defects are associated with an improper brazing parameters selection to the M/C system. In this work, ZrO2 Y-TZP and ZrO2 Mg - PSZ were joint with the stainless steel grade 304 by brazing using a eutectic silver-copper (Ag28Cu) interlayer alloy with different thermal cycles. Ceramic surfaces were previous mechanically metallized with titanium to improve adhesion of the system. The effect of temperature on the M/C interface was studied. SEM-EDS and 3 point flexural bend test were performed to evaluate morphology, chemical composition and mechanical resistance of the M/C interfaces. Lower thermal cycle temperatures produced better results of mechanical resistance, and more regular/ homogeneous reaction layers between braze alloy and metal-ceramic surfaces. Also was proved the AgCu braze alloy activation in situ by titanium