THEORY OF THE ELECTRONIC-STRUCTURE OF POROUS SI

A theoretical model for the electronic structure of porous Si is presented. Three geometries of porous Si (wire with square cross section, pore with square cross section, and pore with circular cross section) along both the [001] and [110] directions are considered. It is found that the confinement geometry affects decisively the ordering of conduction-band states. Due to the quantum confinement effect, there is a mixing between the bulk X and GAMMA states, resulting in finite optical transition matrix elements, but smaller than the usual direct transition matrix elements by a factor of 10(-3). We found that the strengths of optical transitions are sensitive to the geometry of the structure. For (001) porous Si the structure with circular pores has much stronger optical transitions compared to the other two structures and it may play an important role in the observed luminescence. For this structure the energy difference between the direct and the indirect conduction-band minima is very small. Thus it is possible to observe photoluminescence from the indirect minimum at room temperature. For (110) porous Si of similar size of cross section the energy gap is smaller than that of (001) porous Si. The optical transitions for all three structures of (110) porous Si tend to be much stronger along the axis than perpendicular to the axis.

Theory of the electronic and optical properties of dilute bismide alloys

Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest due to their potential for applications in a range of semiconductor devices. Experiments have revealed that dilute bismide alloys such as GaBixAs1−x, in which a small fraction x of the atoms in the III-V semiconductor GaAs are replaced by Bi, exhibit a number of unusual and unique properties. For example, the band gap energy (E g) decreases rapidly with increasing Bi composition x, by up to 90 meV per % Bi replacing As in the alloy. This band gap reduction is accompanied by a strong increase in the spin-orbit-splitting energy (ΔSO) with increasing x, and both E g and ΔSO are characterised by strong, composition-dependent bowing. The existence of a ΔSO > E g regime in the GaBixAs1−x alloy has been demonstrated for x ≳10%, a band structure condition which is promising for the development of highly efficient, temperature stable semiconductor lasers that could lead to large energy savings in future optical communication networks. In addition to their potential for specific applications, dilute bismide alloys have also attracted interest from a fundamental perspective due to their unique properties. In this thesis we develop the theory of the electronic and optical properties of dilute bismide alloys. By adopting a multi-scale approach encompassing atomistic calculations of the electronic structure using the semi-empirical tight-binding method, as well as continuum calculations based on the k•p method, we develop a fundamental understanding of this unusual class of semiconductor alloys and identify general material properties which are promising for applications in semiconductor optoelectronic and photovoltaic devices. By performing detailed supercell calculations on both ordered and disordered alloys we explicitly demonstrate that Bi atoms act as isovalent impurities when incorporated in dilute quantities in III-V (In)GaAs(P) materials, strongly perturbing the electronic structure of the valence band. We identify and quantify the causes and consequences of the unusual electronic properties of GaBixAs1−x and related alloys, and our analysis is reinforced throughout by a series of detailed comparisons to the results of experimental measurements. Our k•p models of the band structure of GaBixAs1−x and related alloys, which we derive directly from detailed atomistic calculations, are ideally suited to the study of dilute bismide-based devices. We focus in the latter part of the thesis on calculations of the electronic and optical properties of dilute bismide quantum well lasers. In addition to developing an understanding of the effects of Bi incorporation on the operational characteristics of semiconductor lasers, we also present calculations which have been used explicitly in designing and optimising the first generation of GaBixAs1−x-based devices.

A New Theory for Perpendicular Transport of Cosmic Rays

We present an improved nonlinear theory for the perpendicular transport of charged particles. This approach is based on an improved nonlinear treatment of field-line random walk in combination with a generalized compound diffusion model. The generalized compound diffusion model employed is more systematic and reliable, in comparison with previous theories. Furthermore, the theory shows remarkably good agreement with test-particle simulations and solar wind observations.

Comparison of plasma transport theory with measurements in a H- discharge

This paper and its companion paper describe the comparison between a one-dimensional theoretical model of a hydrogen discharge in a magnetic multipole plasma source and experimental measurements of the plasma parameters. The discharge chamber, described here, has been designed to produce significant densities of H- ions by incorporating a weak transverse field through the discharge to obtain electron cooling so as to maximize H- production. Langmuir probes are used to monitor the plasma, determining the ion density, the electron density and temperature and the plasma potential. The negative density is measured by photo-detachment of the extra electron using an intense laser beam. The model, described in the companion paper, uses the presented source geometry to calculate these plasma quantities as a function of the major are parameters; namely the are current and voltage and gas pressure. Good agreement is obtained between theory and experiment as a function of position and arc parameters.

Semiclassical theory of shot noise in ballistic n+in+ semiconductor structures: relevance of Pauli and long range Coulomb interactions

We work out a semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures aiming at studying two fundamental physical correlations coming from Pauli exclusion principle and long-range Coulomb interaction. The theory provides a unifying scheme which, in addition to the current-voltage characteristics, describes the suppression of shot noise due to Pauli and Coulomb correlations in the whole range of system parameters and applied bias. The whole scenario is summarized by a phase diagram in the plane of two dimensionless variables related to the sample length and contact chemical potential. Here different regions of physical interest can be identified where only Coulomb or only Pauli correlations are active, or where both are present with different relevance. The predictions of the theory are proven to be fully corroborated by Monte Carlo simulations.

Self-consistent theory of current and voltage noise in multimode ballistic conductors

Electron transport in a self-consistent potential along a ballistic two-terminal conductor has been investigated. We have derived general formulas which describe the nonlinear current-voltage characteristics, differential conductance, and low-frequency current and voltage noise assuming an arbitrary distribution function and correlation properties of injected electrons. The analytical results have been obtained for a wide range of biases: from equilibrium to high values beyond the linear-response regime. The particular case of a three-dimensional Fermi-Dirac injection has been analyzed. We show that the Coulomb correlations are manifested in the negative excess voltage noise, i.e., the voltage fluctuations under high-field transport conditions can be less than in equilibrium.

First-principles electronic theory of non-collinear magnetic order in transition-metal nanowires

The structural, electronic and magnetic properties of one-dimensional 3d transition-metal (TM) monoatomic chains having linear, zigzag and ladder geometries are investigated in the frame-work of first-principles density-functional theory. The stability of long-range magnetic order along the nanowires is determined by computing the corresponding frozen-magnon dispersion relations as a function of the 'spin-wave' vector q. First, we show that the ground-state magnetic orders of V, Mn and Fe linear chains at the equilibrium interatomic distances are non-collinear (NC) spin-density waves (SDWs) with characteristic equilibrium wave vectors q that depend on the composition and interatomic distance. The electronic and magnetic properties of these novel spin-spiral structures are discussed from a local perspective by analyzing the spin-polarized electronic densities of states, the local magnetic moments and the spin-density distributions for representative values q. Second, we investigate the stability of NC spin arrangements in Fe zigzag chains and ladders. We find that the non-collinear SDWs are remarkably stable in the biatomic chains (square ladder), whereas ferromagnetic order (q =0) dominates in zigzag chains (triangular ladders). The different magnetic structures are interpreted in terms of the corresponding effective exchange interactions J(ij) between the local magnetic moments μ(i) and μ(j) at atoms i and j. The effective couplings are derived by fitting a classical Heisenberg model to the ab initio magnon dispersion relations. In addition they are analyzed in the framework of general magnetic phase diagrams having arbitrary first, second, and third nearest-neighbor (NN) interactions J(ij). The effect of external electric fields (EFs) on the stability of NC magnetic order has been quantified for representative monoatomic free-standing and deposited chains. We find that an external EF, which is applied perpendicular to the chains, favors non-collinear order in V chains, whereas it stabilizes the ferromagnetic (FM) order in Fe chains. Moreover, our calculations reveal a change in the magnetic order of V chains deposited on the Cu(110) surface in the presence of external EFs. In this case the NC spiral order, which was unstable in the absence of EF, becomes the most favorable one when perpendicular fields of the order of 0.1 V/Å are applied. As a final application of the theory we study the magnetic interactions within monoatomic TM chains deposited on graphene sheets. One observes that even weak chain substrate hybridizations can modify the magnetic order. Mn and Fe chains show incommensurable NC spin configurations. Remarkably, V chains show a transition from a spiral magnetic order in the freestanding geometry to FM order when they are deposited on a graphene sheet. Some TM-terminated zigzag graphene-nanoribbons, for example V and Fe terminated nanoribbons, also show NC spin configurations. Finally, the magnetic anisotropy energies (MAEs) of TM chains on graphene are investigated. It is shown that Co and Fe chains exhibit significant MAEs and orbital magnetic moments with in-plane easy magnetization axis. The remarkable changes in the magnetic properties of chains on graphene are correlated to charge transfers from the TMs to NN carbon atoms. Goals and limitations of this study and the resulting perspectives of future investigations are discussed.

Theoretical investigation of electronic and optical properties of andalusite within density functional theory

The electronic and optical properties of andalusite were studied by using quantum-mechanical calculations based on the density functional theory (DFT). The electronic structure shows that andalusite has a direct band gap of 5.01 eV. The complex dielectric function and optical constants, such as extinction coefficient, refractive index, reflectivity and energy-loss spectrum, are calculated. The optical properties of andalusite are discussed based on the band structure calculations. It is shown that the O-2p states and Al-3s states play a major role in optical transitions as initial and final states, respectively. (C) 2010 Elsevier Ltd. All rights reserved.

A review of particle transport theory in a binary stochastic medium

A finalidade deste trabalho ´e apresentar uma revis˜ao da teoria do transporte de part´ıculas em meios compostos por uma mistura aleat´oria bin´aria. Para atingir este objetivo n´os apresentamos brevemente alguns conceitos b´asicos de teoria do transporte, e ent˜ao discutimos em detalhes a deriva¸c˜ao de duas abordagens desenvolvidas para a solu¸c˜ao de tais problemas: os modelos de mistura atˆomica e de Levermore-Pomraning. Providenciamos ainda, com o uso da formula¸c˜ao LTSN, compara ¸c˜oes num´ericas destes modelos com resultados de benchmark gerados atrav´es de um processo de Monte Carlo.

Contribution of oxygen related defects to the electronic transport in SnO2 sol-gel films

SnO2 deposited by sol-gel is a polycrystalline film with small grain size. Oxygen present at a less grain boundary traps electrons and then the depletion layer around the potential barrier of the grain boundary becomes wider, comparable to the grain size. We have modeled the conductivity taking into account the trapped charge at the depletion layer of the grain boundary and other scattering mechanisms such as ionized impurity and polar optical. Experimental data of photoconductivity of SnO2 sol-gel films are simulated considering the dominant scattering at grain boundary and crystallite bulk. The fraction of trapped charge at the grain boundary depends on temperature and wavelength of irradiating light, being as high as 50% for illumination in the range 500-600 nm for SnO2-2%Nb as grown sample annealed in air to 550°C. This fraction can be quite reduced depending on exposure to light and annealing under different oxygen partial pressure conditions.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Electronic transport in patterned graphene nanoroads

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electronic transport properties of YBa 2 Cu 3 O 7-x

documentstyle[12pt,german]{article} pagestyle{empty} topmargin-1.5cm textheight24.5cm footskip-1.5cm % % begin{document} % begin{center} {Large {it Hern'{a}n Rodr'{i}guez}}\ vspace{24pt} {Large {bf Elektronische Transporteigenschaften von YBa$_{2}$Cu$_{3}$O$_{7-x}$/PrBa$_{2}$Cu$_{2.9}$Ga$_{0.1}$O$_{7-y}$ Dreifachschichten und "Ubergittern senkrecht zur Lagenstruktur}} end{center} vspace{24pt} noindent In der vorliegenden Arbeit wurden die Transporteigenschaften senkrecht zu den CuO$_{2}$--Ebenen von Hochtemperatur Supraleitern an YBa$_{2}$Cu$_{3}$O$_{7-x}$/\ PrBa$_{2}$Cu$_{2.9}$Ga$_{0.1}$O$_{7-y}$/ YBa$_{2}$Cu$_{3}$O$_{7-x}$ Dreifachschichten und [(YBa$_{2}$Cu$_{3}$O$_{7-x}$)$_{n}$\/(PrBa$_{2}$Cu$_{2.9}$Ga$_{0.1}$O$_{7-y}$)$_{m}$]$_{times M}$ "Ubergittern untersucht. Um die Transporteigenschaften senkrecht zu den Grenzfl"achen in Mehrlagenstrukturen messen zu k"onnen, ist ein Verfahren zur Herstellung von planaren Bauelemente verwendet worden. Die Untersuchungen an YBa$_{2}$Cu$_{3}$O$_{7-x}$/PrBa$_{2}$Cu$_{2.9}$Ga$_{0.1}$O$_{7-y}$ Dreifachschichten und "Ubergittern zeigen, da"s die Substrattemperatur w"ahrend des Wachstums die elektronischen Eigenschaften entlang der $c$--Achse stark beeinflusst. Bei Senkung der Abscheidetemperatur ergibt sich eine "Anderung von normalmetallischem zu tunnelkontaktartigem Verhalten. Die bei 840$^circ$C hergestellten Vielfachschichten weisen sowohl eine konstante Hintergrundleitf"ahigkeit als auch eine "Uberschu"sleitf"ahigkeit bei niedrigen Spannungen auf. Dies deutet darauf hin, da"s es sich um einen Supraleiter--Normalleiter--Supraleiter (S--N--S) Kontakt handelt. Dagegen zeigen Vielfachschichten, die bei 760$^circ$C deponiert wurden, deutlich unterschiedliches Verhalten verglichen mit den bei 840$^circ$C pr"aparierte Proben. Die Leitf"ahigkeit nimmt mit der Spannung zu, wobei der Leitf"ahigkeithintergrund eine ``V''--Form darstellt. Dar"uber hinaus zeigen die Leitf"ahigkeitskennlinien bei niedrigen Spannungen eine starke Abh"angigkeit sowohl von der Bias Spannung als auch von der Temperatur. Bei Dreifachschichten mit 20 nm PrBa$_{2}$Cu$_{2.9}$Ga$_{0.1}$O$_{7-y}$ tritt ein Leitf"ahigkeitmaximun bei Null--Spannung auf. Die Wechselwirkung zwischen tunnelnden Quasiteilchen und magnetischen Momenten in der Barriere ruft dieses Maximun hervor. Das "Ubergitter mit ($n/m$) = (4/5) Modulation zeigt Supraleiter--Isolator--Supraleiter (S--I--S) Tunnelkontakt--Verhalten mit Strukturen, die von der Energiel"ucke des Supraleiters hervorgerufen werden. Das S--N-- bzw., S--I--Kontaktverhalten der Heterostrukturen wurden ebenfalls mit Messungen der Leitf"ahigkeit bei tiefern Temperaturen weit au"serhalb der supraleitenden Energiel"ucke best"atigt. Diese Ergebnisse weisen auf die M"oglichkeit hin, durch Einstellen der Substrattemperaturen bei der Deposition das Auftreten von S--N--S und S--I--S Verhalten der Kontakte zu steuern. vspace{24pt} noindent Datum: 05.07.2004\ Betreuer: Prof. Dr. Hermann Adrian %Name des Betreuers, daneben dessen Unterschrift end{document}