Critical buckling temperature of single-walled carbon nanotubes embedded in a one-parameter elastic medium based on nonlocal continuum mechanics

In this paper, the critical budding temperature of single-walled carbon nanotubes (SWCNTs), which are embedded in one-parameter elastic medium (Winkler foundation) is estimated under the umbrella of continuum mechanics theory. Nonlocal continuum theory is incorporated into Timoshenko beam model and the governing differential equations of motion are derived. An explicit expression for the non-dimensional critical buckling temperature is also derived in this work. The effect of the nonlocal small scale coefficient, the Winkler foundation parameter and the ratio of the length to the diameter on the critical buckling temperature is investigated in detail. It can be observed that the effects of nonlocal small scale parameter and the Winkler foundation parameter are significant and should be considered for thermal analysis of SWCNTs. The results presented in this paper can provide useful guidance for the study and design of the next generation of nanodevices that make use of the thermal buckling properties of embedded single-walled carbon nanotubes. (C) 2011 Elsevier B.V. All rights reserved.

Variation in glass transition temperature of polymer nanocomposite films driven by morphological transitions

We report the variation of glass transition temperature in supported thin films of polymer nanocomposites, consisting of polymer grafted nanoparticles embedded in a homopolymer matrix. We observe a systematic variation of the estimated glass transition temperature T-g, with the volume fraction of added polymer grafted nanoparticles. We have correlated the observed T-g variation with the underlying morphological transitions of the nanoparticle dispersion in the films. Our data also suggest the possibility of formation of a low-mobility glass or gel-like layer of nanoparticles at the interface, which could play a significant role in determining T-g of the films provided. (C) 2013 American Institute of Physics. http://dx.doi.org/10.1063/1.4773442]

Effect of Fe doping on the magnetic ordering temperature of ErMnO3

We studied the effect of Fe doping on structural, magnetic, and dielectric properties of hexagonal ErMnO3 system. For 50% doping of Fe on Mn site in ErMnO3 modulated its crystallographic structure from hexagonal to orthorhombic phase. Accompanied with the structural phase transition in ErMnO3, the magnetic properties are effectively modified. The Fe doped samples exhibit enhancement in antiferromagnetic ordering Neel temperature (T-N) from 77K (ErMnO3) to 280K (ErFe0.5Mn0.5O3). The anomalies observed in the dielectric constant around T-N in doped ErMnO3 samples indicate the coupling between electric and magnetic order parameters. (C) 2015 AIP Publishing LLC.

Effects on Dense-phase Zone Temperature of Fluidized Bed with Uneven Air Distribution

由于采用非均匀布风,内旋流流化床的移动区空气量不足,导致燃烧不充分,温度较低。当移动区未流化时,密相区内存在较明显的温度不均匀性。随着移动区流速的提高,温度差迅速减小。当移动区流速超过2.0#mu#m后,密相区温度基本均匀一致。流动区流速对密相区温度均匀有一定的影响,流速越高,温度越均匀。

Measured temperature of a laminar plasma jet by using thermocouple at reduced pressure

Attempts were made to measure the gas temperature of a DC arc laminar plasma jet generated at reduced pressure by using a pair of WRe-5/26 thermocouple. Results show that the measured temperature is much lower than the value measured by using the spectral method. Theoretical work considering rarefied-gas heat transfer effects has been carried out to analyze the measured error of the thermocouple.

Surface water temperature of Windermere. Monthly and yearly totals of degree-days centigrade and monthly mean temperatures, 1933 to 1975

The surface temperature of Windermere has been recorded by the staff of the Freshwater Biological Association on every weekday (with a few minor exceptions) since 11 January 1933. This publication presents this information in a form which can easily be used by individual research workers. There are 43 tables (1 for each year, 1933-1975) which give the data, expressed as degree-days centigrade. The tables show for each month the number of degree-days above each temperature from 0 degree C to the highest recorded, at 1 degree C intervals. Mean temperatures are obtained by dividing the number of degree-days over 0 degree C by the relevant number of days. The advantage of degree-days rather than mean temperatures is that degree-days are additive so data for any desired periods may be combined quickly and simply. Seasonal results for spring, summer, autumn and winter are presented in tabular form, as are selected totals for comparisons between years. Further tables give the mean temperature in each month of the year, and the frequency distributions of monthly mean temperatures.

Optimizing the Curie temperature of pseudo-binary RxR2-x ' Fe-17 (R, R ' = rare earth) for magnetic refrigeration

Several pseudo-binary RxR2-x'Fe-17 alloys (with R = Y, Ce, Pr, Gd and Dy) were synthesized with rhombohedral Th2Zn17-type crystal structure determined from x-ray and neutron powder diffraction. The choice of compositions was done with the aim of tuning the Curie temperature (T-C) in the 270 +/- 20 K temperature range, in order to obtain the maximum magneto-caloric effect around room temperature. The investigated compounds exhibit broad isothermal magnetic entropy changes, Delta S-M(T), with moderate values of the refrigerant capacity, even though the values of Delta S-M(Peak) are relatively low compared with those of the R2Fe17 compounds with R = Pr or Nd. The reduction on the Delta S-M(Peak) is explained in terms of the diminution in the saturation magnetization value. Furthermore, the Delta S-M(T) curves exhibit a similar caret-like behavior, suggesting that the magneto-caloric effect is mainly governed by the Fe-sublattice. A single master curve for Delta S-M/Delta S-M(Peak)(T) under different values of the magnetic field change are obtained for each compound by rescaling of the temperature axis.

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

We have studied the influence of the growth temperature of the high-temperature (HT) AIN buffer layer on the properties of the GaN epilayer which was grown on Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). It was found that the crystal quality of the GaN epilayer strongly depends on the growth temperature of the HT-AIN buffer. The growth temperature of the AIN buffer to obtain high-quality GaN epilayers lies in a narrow window of several tens of degrees. When the temperature is lower than a certain temperature range, the appearance of AIN polycrystals results in the deterioration of the crystal quality of the AIN buffer layer, which is greatly disadvantageous to the coalescence of the GaN epilayer. Although the AIN buffer's crystal quality is improved as the growth temperature increases, the Si outdiffusion from the substrate is also enhanced when the temperature is higher than a certain temperature range, which will demolish the subsequent growth of the GaN epilayer. Therefore, there exists an optimum growth temperature range of the AIN buffer around 1080degreesC for the growth of high-quality GaN epilayers. (C) 2003 Elsevier B.V. All rights reserved.

A convenient way of determining the ferromagnetic transition temperature of metallic (Ga,Mn)As

We have studied magnetic and transport properties of insulating and metallic (Ga,Mn)As layers before and after annealing. A dramatic increase of the ferromagnetic transition temperature T-C by postgrowth annealing has been realized in both insulating and metallic (Ga,Mn)As. The as-grown insulating (Ga,Mn)As can be turned into metallic by the low-temperature annealing. For all the metallic (Ga,Mn)As, a characteristic feature in the temperature dependence of sheet resistance appears around T-C. This phenomenon may provide a simple and more convenient method to determine the T-C of metallic (Ga,Mn)As compared with superconducting quantum interference device (SQUID) measurement. Moreover, the T-C of the metallic (Ga,Mn)As obtained by this way is in good agreement with that measured by a SQUID magnetometer. (C) 2005 American Institute of Physics.

Effects of growth temperature of AlGaN buffer layer on the properties of A1(0.58)Ga(0.42)N epilayer by NH3-MBE

Al0.58Ga0.42N epilayers are grown by ammonia gas source molecular beam epitaxy (NH3-MBE) on (0001) sapphire substrate using AlGaN buffer layer. The effects of the buffer layer growth temperature on the properties of Al0.58Ga0.42N epilayer are especially investigated. In-situ high-energy electron diffraction (RHEED), double-crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM), photoconductivity measurement and cathodoluminescence (CL) are used to characterize the samples. It is found that high growth temperature of AlGaN buffer layer would improve the crystalline quality, surface smoothness, optical quality and uniformity of the Al0.58Ga0.42N epilayer. The likely reason for such improvements is also suggested. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Electron beam longitudinal temperature of electron cooler on the CSR

Electron beam longitudinal temperature is an important parameter on electron cooling devise. In this paper, electron beam longitudinal temperature on the HIRFL-CSR electron cooling devise is deduced from four important factors-flattened distribution, electrostatic accelerate, space charge effect and beam scattering.