Growth of AgInS2 thin films by ultrasonic spray pyrolysis technique

Silver Indium Di-sulfide (AgInS2) thin films are deposited using ultrasonic spray pyrolysis technique and the effect of substrate temperature (T-s) on film growth is studied by varying the temperature from 250 to 400 degrees C. From the structural analysis, orthorhombic AgInS2 phase is identified with preferential orientation along (002) plane. Further analysis with Raman revealed the coexistence of Cu-Au ordered and chalcopyrite structures in the films. Stoichiometric films are obtained at T-s of 300 degrees C. Above 300 degrees C, the film conductivity changed from p to n-type and the grain size decreased. The band gap of AgInS2 films varied from 1.55 to 1.89 eV and absorption coefficient is found to be >10(4) cm(-1). The films have sheet resistance in the range of 0.05 to 1300 Omega/square Both p and n type films are prepared through this technique without any external doping. (C) 2013 Elsevier B.V. All rights reserved.

Tin-Incorporation Induced Changes in the Microstructural, Optical, and Electrical Behavior of Tungsten Oxide Nanocrystalline Thin Films Grown Via Spray Pyrolysis

Undoped and Sn-doped WO3 thin films were grown on cleaned glass substrates by chemical spray pyrolysis, using ammonium tungstate (NH4)(2)WO4 as the host precursor and tin chloride (SnCl4 center dot 5H(2)O) as the source of dopant. The XRD spectra confirm the monoclinic structure with a sharp narrow peak along (200) direction along with other peaks of low relative intensities for all the samples. On Sn doping, the films exhibit reduced crystallinity relative to the undoped film. The standard deviation for relative peak intensity with dopant concentration shows enhancement in heterogeneous nucleation growth. As evident from SEM images, on Sn doping, appearance of island-like structure (i.e., cluster of primary crystallites at few places) takes place. The transmittance has been found to decrease in all the Sn-doped films. The optical band gap has been calculated for both direct and indirect transitions. On Sn doping, the direct band gap shows a red shift and becomes 2.89 eV at 2 at.% doping. Two distinct peaks, one blue emission at 408 nm and other green emission at 533 nm, have been found in the PL spectra. Electrical conductivity has been found to increase with Sn doping.

Metal-insulator transition characteristics of vanadium dioxide thin films synthesized by ultrasonic nebulized spray pyrolysis of an aqueous combustion mixture

We report the synthesis of high quality vanadium dioxide (VO2) thin films by a novel spray pyrolysis technique, namely ultrasonic nebulized spray pyrolysis of aqueous combustion mixture (UNSPACM). This simple and cost effective two step process involves synthesis of a V2O5 film on an LaAlO3 substrate followed by a controlled reduction to form single phase VO2. The formation of M1 phase (p21/c) is confirmed by Raman spectroscopic studies. A thermally activated metal-insulator transition (MIT) was observed at 61 degrees C, where the resistivity changes by four orders of magnitude. Activation energies for the low conduction phase and the high conduction phase were obtained from temperature variable resistance measurements. The infrared spectra also show a dramatic change in reflectance from 13% to over 90% in the wavelength range of 7-15 mu m. This indicates the suitability of the films for optical switching applications at infrared frequencies.

Development of an automated ultrasonic spray pyrolysis system and the growth of Cu2ZnSnS4 thin films

An automated ultrasonic spray pyrolysis system is fabricated for the growth of thin films. The system is equipped with x-y movement and enables film deposition in different patterns and spray rates. Cu-2(Zn,Sn)S-4 (CZTS) films are deposited using this setup. The substrate temperature (T-s) is varied from 240 to 490 degrees C. Kesterite CZTS phase is observed in all the films together with binary phases. The films prepared at T-s <340 degrees C showed SnxSy phase and those at T-s >340 degrees C showed Cu2S phase. Sulfur incorporation is maximum (40%) at 440 degrees C and the films showed better morphology. The Cu and S concentrations are varied to remove binary phases. Depth wise elemental analysis confirmed the existence of single phase CZTS. p-Type CZTS films of resistivity in the range of 10(2)-10(3) Omega cm are obtained. (C) 2015 Elsevier B.V. All rights reserved.

Luminescence properties of Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors prepared by spray pyrolysis process

Starting from metal nitrate aqueous solutions and H3BO3, Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors were synthesized by spray pyrolysis followed by annealing at high temperature. The obtained phosphor particles have spherical morphology with size in the range 0.5-2 mu m. Independent of the x values in Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) phosphors, the Eu3+ ion shows its characteristic D-5(0), (1)-F-7(J) (J = 0, 1, 2, 3, 4) transitions with D-5(0)-F-7(2) red emission (612 nm) as the most prominent group. The photoluminescence intensity of phosphors increases with the increase of x value in Y0.9-xGdxEu0.1Al3(BO3)(4) (0 <= x <= 0.9) due to an energy migration process like Gd3+-(Gd3+)(n)-Eu3+ that occurred in the host materials.

Physical and electrochemical characterizations of PtRu/C catalysts by spray pyrolysis for electrocatalytic oxidation of methanol

In this paper, it was reported that the carbon-supported Pt-Ru(Pt-Ru/C) catalyst used as the anodic catalyst in the direct methanol fuel cell (DMFC) was synthesized with a two-step spray pyrolysis (SP) method using the Pt and Ru metal salt as the precursors and polyethylene glycol (PEG) with the different molecular weights (Mw= 200,600,and 1000 analytical reagent) as cosolvent. PEG as a cosolvent plays a crucial role in producing PtRu/C catalysts. It was found that the Mw of PEG could affect the electrocatalytic activity of Pt-Ru and the morphology of the Pt-Ru particles in the Pt-Ru/C catalysts prepared with this method. When the Mw of PEG is 600, the Pt-Ru particles in the Pt-Ru/C catalyst prepared with this method possess the small average size, narrow size distribution, uniform dispersion, and high electrochemically active specific surface area. The electrocatalytic activity of the Pt-Ru/C catalyst prepared with this method using the cosolvent PEG with Mw = 600 for the methanol oxidation is much higher than that of the commercial E-TEK Pt-Ru/C catalyst. Therefore, the two-step SP method is an excellent method for the preparation of the Pt-Ru/C catalyst used in DMFCs.

Synthesis and characterization of spherical Sr2CeO4 phosphors by spray pyrolysis for field emission displays

A blue emitting Sr2CeO4 phosphor with a one-dimensional structure has been prepared by a two-step spray pyrolysis (SP) method, starting from the aqueous solutions of metal nitrates with citric acid and polyethylene glycol (PEG) as additives. The material is ultimately designed for field emission displays (FEDs). X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG-DTA), field emission scanning electron microscope pictures (FE-SEM) as well as photoluminescence (PL) and cathodoluminescence (CL) spectroscopy and lifetime measurements have been employed to characterize the samples. The morphology, PL and low voltage CL properties of Sr2CeO4 phosphors as-prepared using the SP method have been investigated by changing the concentration of the precursor solution, concentration of PEG, annealing temperature, acceleration voltage and filament current. The obtained Sr2CeO4 phosphor particles are spherical and of submicron size, 0.5-2 mu m. The emission spectrum of the phosphors shows a broad band with maximum at 467 nm (lifetime = 37.4 mu s; CIE chromaticity coordinates: x = 0.15 and y = 0.21), presumably due to a ligand-to-metal charge-transfer transition.

Luminescent propertiesOf YVO4 : Dy3+ phosphors prepared by spray pyrolysis

Starting from nitrate aqueous solutions with citrate acid and polyethylene glycol (PEG) as additives, YVO4:Dy3+ phosphors were prepared by a two-step spray pyrolysis (SP). The obtained phosphors had spherical morphology. The luminescence properties of YVO4:Dy3+ phosphors were investigated by changing the concentration of Dy3+ and the annealing temperatures, respectively. The emission intensity of the phosphors increased with increasing the annealing temperature due to the increase of the crystallinity and particles size. The optimum concentration for the luminescence of Dy3+ was determined to be 2 mol% of Y3+ in YVO4 host.

Morphology control and luminescence properties of YAG : Eu phosphors prepared by spray pyrolysis

Starting from nitrate aqueous solutions with citric acid and polyethylene glycol (PEG) as additives, Y3Al5O12:Eu (YAG:Eu) phosphors were prepared by a two-step spray pyrolysis (SP) method. The obtained YAG:Eu phosphor particles have spherical shape, submicron size and smooth surface. The effects of process conditions of the spray pyrolysis on the crystallinity, morphology and luminescence properties of phosphor particles were investigated. The emission intensity of the phosphors increased with increasing of sintering temperature and solution concentration due to the increase of the crystallinity and particles size, respectively. Adequate amount of PEG was necessary for obtaining spherical particles, and the optimum emission intensity could be obtained when the concentration of PEG was 0.10 g/ml in the precursor solution. Compared with the YAG:Eu phosphor prepared by citrate-gel (CG) method with non-spherical morphology, spherical YAG:Eu phosphor particles showed a higher emission intensity.

Automation of Chemical Spray Pyrolysis Unit and Fabrication of Sprayed CuInS2/In2S3 Solar Cell

Aim of the present work was to automate CSP process, to deposit and characterize CuInS2/In2S3 layers using this system and to fabricate devices using these films.An automated spray system for the deposition of compound semiconductor thin films was designed and developed so as to eliminate the manual labour involved in spraying and facilitate standardization of the method. The system was designed such that parameters like spray rate, movement of spray head, duration of spray, temperature of substrate, pressure of carrier gas and height of the spray head from the substrate could be varied. Using this system, binary, ternary as well as quaternary films could be successfully deposited.The second part of the work deal with deposition and characterization of CuInS2 and In2S3 layers respectively.In the case of CuInS2 absorbers, the effects of different preparation conditions and post deposition treatments on the optoelectronic, morphological and structural properties were investigated. It was observed that preparation conditions and post deposition treatments played crucial role in controlling the properties of the films. The studies in this direction were useful in understanding how the variation in spray parameters tailored the properties of the absorber layer. These results were subsequently made use of in device fabrication process.Effects of copper incorporation in In2S3 films were investigated to find how the diffusion of Cu from CuInS2 to In2S3 will affect the properties at the junction. It was noticed that there was a regular variation in the opto-electronic properties with increase in copper concentration.Devices were fabricated on ITO coated glass using CuInS2 as absorber and In2S3 as buffer layer with silver as the top electrode. Stable devices could be deposited over an area of 0.25 cm2, even though the efficiency obtained was not high. Using manual spray system, we could achieve devices of area 0.01 cm2 only. Thus automation helped in obtaining repeatable results over larger areas than those obtained while using the manual unit. Silver diffusion on the cells before coating the electrodes resulted in better collection of carriers.From this work it was seen CuInS2/In2S3 junction deposited through automated spray process has potential to achieve high efficiencies.

Highly conductive and transparent ZnO thin film using Chemical Spray Pyrolysis technique: Effect of doping and deposition parameters

In the present work we report the preparation details studies on ZnO thin films. ZnO thin films are prepared using cost effective deposition technique viz., Chemical Spray Pyrolysis (CSP). The method is very effective for large area preparation of the ZnO thin film. A new post-deposition process could also be developed to avoid the adsorption of oxygen that usually occurs after the spraying process i.e., while cooling. Studies were done by changing the various deposition parameters for optimizing the properties of ZnO thin film. Moreover, different methods of doping using various elements are also tried to enhance the conductivity and transparency of the film to make these suitable for various optoelectronic applications.

Structural And Surface Morphological Investigation Of Formation Stages Of Highly (002) Oriented Zno Films On Glass Substrates By Spray Pyrolysis Method

ZnO thin films were coated on amorphous glass substrate at various temperatures in the range 160-500 0C by spray pyrolysis method. The as deposited films were characterised by using XRD and SEM. Wurtzite phase of ZnO was formed at a substrate temperature of 400 0C, highly oriented (002) phase was developed with respect to increase of substrate temperature from 450 to 500 0C. Morphological and growth mode of these films were analyzed with respect to structural orientation of films from wurtzite to highly (002) oriented phase. Present study reveals that substrate temperature was one of the important parameters which determine the crystalline quality, population of defects, grain size, orientation and morphology of the films

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N105/cm) were deposited at substrate temperature of 375 °C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375 °C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS2, Sn2S3 were also determined

Barium strontium titanate powders prepared by spray pyrolysis

Ultasonic spray pyrolysis (SP) has been investigated for the production of the barium strontium titanate (BST) powders from the polymeric precursors. The processing parameters, such as flux of aerosol and temperature profile inside the furnace, were optimized to obtain single phase BST. The powders were characterized by the methods of X-ray diffraction analysis, SEM, EDS and TEM. The obtained powders were submicronic, consisting of spherical, polycrystalline particles, with internal nanocrystalline structure. Crystallite size of 10 nut, calculated using Rietveld refinement, is in a good agreement with results of HRTEM. (c) 2005 Elsevier B.V. All rights reserved.

Strontium titanate films prepared by spray pyrolysis

Strontium titanate thin films were prepared by spray pyrolysis technique. Deposition parameters, such as solution concentration, time and temperature of deposition, and flow rate of carrier gas were optimized to obtain dense films without cracks. Films with different thicknesses were prepared through the control of deposition time. Prepared thin films were homogeneous, well crystallized, with uniform grain size. (C) 2003 Elsevier Ltd. All rights reserved.