Simon Hochherr and Ella Hochherr Portraits; Couples

Handwritten information on back of photo(s).

Simon Hochherr and Ella Hochherr with two unidentified women; Kohlhof Portraits; Groups

Handwritten information on back of photo(s).

Goldschmit Simon Cemeteries; Tombs

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goldschmidt simon Portraits Men

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gldschmidt simon, hannover Portraits Men

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goldschmidt simon; liepman frieda, hannover Portraits Couples

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goldschmidt, max; goldschmidt lotte; goldschmidt fritz; goldschmidt frieda; heilbrunn lotte; goldscmidt anna; simon moses Portraits Family

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Letter from Simon Nathan to Mr. Harris, asking him to act temporarily as shochet

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Letter to K.K.S.I. from Moses and Simon Content, August 19, 1828

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Letter from Isaac Mendez Seixas to Joseph Simon

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Simon Levy proposal to establish Hebrew school at K.K.S.I.

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Resignation of Simon Nathan as trustee

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Taxonomía y distribución de las especies ibéricas del género Sabacon Simon 1879 (Arachnida: Opiliones: Sabaconidae)

[ES] El género Sabacon (Arachnida: Opiliones) tiene distribución holártica, y en la Península Ibérica se restringe a Pirineos y Cordillera Cantábrica. Se menciona la presencia de S.viscayanus en la Sierra Cebollera, a partir del hallazgo de una hembra, lo que constituye el primer registro al sur del Ebro. En este trabajo se ha determinado la subespecie a la que pertenece esa población gracias a la captura de un macho, que corresponde a Sabacon viscayanus viscayanus. Con los ejemplares de las colecciones (ZUPV y CRBA) se han redescrito las especies ibéricas y se ha descrito por primera vez el macho de S. franzi. A su vez, se han construido mapas de distribución de todas las especies con datos citados y de las colecciones propias.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.