Profile simulations of gas chopping etching processes : model development and comparison with experiments

The progress in microsystem technology or nano technology places extended requirements to the fabrication processes. The trend is moving towards structuring within the nanometer scale on the one hand, and towards fabrication of structures with high aspect ratio (ratio of vertical vs. lateral dimensions) and large depths in the 100 µm scale on the other hand. Current procedures for the microstructuring of silicon are wet chemical etching and dry or plasma etching. A modern plasma etching technique for the structuring of silicon is the so-called "gas chopping" etching technique (also called "time-multiplexed etching"). In this etching technique, passivation cycles, which prevent lateral underetching of sidewalls, and etching cycles, which etch preferably in the vertical direction because of the sidewall passivation, are constantly alternated during the complete etching process. To do this, a CHF3/CH4 plasma, which generates CF monomeres is employed during the passivation cycle, and a SF6/Ar, which generates fluorine radicals and ions plasma is employed during the etching cycle. Depending on the requirements on the etched profile, the durations of the individual passivation and etching cycles are in the range of a few seconds up to several minutes. The profiles achieved with this etching process crucially depend on the flow of reactants, i.e. CF monomeres during the passivation cycle, and ions and fluorine radicals during the etching cycle, to the bottom of the profile, especially for profiles with high aspect ratio. With regard to the predictability of the etching processes, knowledge of the fundamental effects taking place during a gas chopping etching process, and their impact onto the resulting profile is required. For this purpose in the context of this work, a model for the description of the profile evolution of such etching processes is proposed, which considers the reactions (etching or deposition) at the sample surface on a phenomenological basis. Furthermore, the reactant transport inside the etching trench is modelled, based on angular distribution functions and on absorption probabilities at the sidewalls and bottom of the trench. A comparison of the simulated profiles with corresponding experimental profiles reveals that the proposed model reproduces the experimental profiles, if the angular distribution functions and absorption probabilities employed in the model is in agreement with data found in the literature. Therefor the model developed in the context of this work is an adequate description of the effects taking place during a gas chopping plasma etching process.

Analysis methods for meso- and macroporous silicon etching baths

Analysis methods for electrochemical etching baths consisting of various concentrations of hydrofluoric acid (HF) and an additional organic surface wetting agent are presented. These electrolytes are used for the formation of meso- and macroporous silicon. Monitoring the etching bath composition requires at least one method each for the determination of the HF concentration and the organic content of the bath. However, it is a precondition that the analysis equipment withstands the aggressive HF. Titration and a fluoride ion-selective electrode are used for the determination of the HF and a cuvette test method for the analysis of the organic content, respectively. The most suitable analysis method is identified depending on the components in the electrolyte with the focus on capability of resistance against the aggressive HF.

Influence of sodium hypochlorite and edta on the microtensile bond strength of a self-etching adhesive system

Chemical substances used during biomechanical preparation of root canals can alter the composition of dentin surface and affect the interaction with restorative materials. OBJECTIVE: The purpose of this study was to evaluate the microtensile bond strength (µTBS) of a self-etching adhesive system to dentin irrigated with sodium hypochlorite (NaOCl) and ethylenediaminetetraacetic acid (EDTA). MATERIAL AND METHODS: Thirty human third molars were sectioned 3 mm below the occlusal surface, polished with 600- to 1200-grit silicon carbide papers, and randomly divided into 3 groups: G1 (control): no irrigating solution; G2: 1% NaOCl; and G3: 1% NaOCl followed by the application of 17% EDTA. The specimens received the self-etching adhesive system (XENO III - Dentsply), restored with microhybrid composite resin (Z250 - 3M ESPE), sectioned and trimmed to create 4 hourglass-shaped slabs of each tooth. The slabs were tested in microtensile strength in a universal testing machine (Emic DL 2000) at a crosshead speed of 0.5 mm/min until fracture. The results were analyzed statistically by ANOVA and Newman-Keuls test. RESULTS: Mean µTBS values and standard deviations in MPa were: G1 = 11.89 ± 4.22; G2 = 19.41 ± 5.32; G3 = 11.34 ± 4.73. 1% NaOCl increased the adhesive resistance significantly (p<0.001/F=22.5763). The application of 1% NaOCl/17% EDTA resulted in statistically similar µTBS to the control group. CONCLUSIONS: None of the irrigants affected negatively the µTBS of XENO III to dentin. The use of 1% NaOCl alone resulted in higher bond strength than the other treatments. The combination of 1% NaOCl and 17% EDTA produced similar bond strength to that of untreated dentin.

Nanostructured diamond-like carbon films characterization

In this work, we have studied the influence of the substrate surface condition on the roughness and the structure of the nanostructured DLC films deposited by high-density plasma chemical vapor deposition Four methods were used to modify the silicon wafers surface before starting the deposition processes of the nanostructured DLC films. micro-diamond powder dispersion, micro-graphite powder dispersion, and roughness generation by wet chemical etching and roughness generation by plasma etching. The reference wafer was only submitted to a chemical cleaning. It was possible to see that the final roughness and the sp(3) hybridization degree (that is related with the structure and chemical composition) strongly depend on the substrate surface conditions The surface roughness was observed by AFM and SEM and the hybridization degree of the DLC films was analyzed by Raman Spectroscopy Thus, the effects of the substrate surface on the DLC film structure were confirmed. These phenomena can be explained by the fact that the locally higher surface energy and the sharp edges may induce local defects promoting the nanostructured characteristics in the DLC films. (C) 2009 Elsevier B.V. All rights reserved.

Influence of substrate surface topography in the deposition of nanostructured diamond-like carbon films by high density plasma chemical vapor deposition

In this work, we have studied the influence of the substrate surface condition on the roughness and the structure of the nanostructured DLC films deposited by High Density Plasma Chemical Vapor Deposition. Four methods were used to modify the silicon wafers surface before starting the deposition processes of the nanostructured DLC films: micro-diamond powder dispersion, micro-graphite powder dispersion, and roughness generation by wet chemical etching and roughness generation by plasma etching. The reference wafer was only submitted to a chemical cleaning. It was possible to see that the final roughness and the sp(3) hybridization degree strongly depend on the substrate surface conditions. The surface roughness was observed by AFM and SEM and the hybridization degree of the DLC films was analyzed by Raman Spectroscopy. In these samples, the final roughness and the sp(3) hybridization quantity depend strongly on the substrate surface condition. Thus, the effects of the substrate surface on the DLC film structure were confirmed. These phenomena can be explained by the fact that the locally higher surface energy and the sharp edges may induce local defects promoting the nanostructured characteristics in the DLC films. (C) 2008 Elsevier B.V. All rights reserved.

Influence of glutaraldehyde priming on bond strength of an experimental adhesive system applied to wet and dry dentine

Objectives: This study tested the following null hypotheses: (1) there is no difference in resin-dentine bond strength when an experimental glutaraldehyde primer solution is added prior to bonding procedures and (2) there is no difference in resin-dentine bond strength when experimental glutaraldehyde/adhesive system is applied under dry or wet demineralized dentine conditions. Methods: Extracted human maxillary third molars were selected. Flat, mid-coronal dentine was exposed for bonding and four groups were formed. Two groups were designated for the dry and two for the wet dentine technique: DRY: (1) Group GD: acid etching + glutaraldehyde primer (primer A) + HEMA/ethanol primer (primer B)-under dried dentine + unfilled resin; (2) Group D: the same as GD, except for primer A application; WET: (3) Group GW: the same as GD, but primer B was applied under wet dentine condition; (4) Group W: the same as GW, except for primer A application. The bonding resin was light-cured and a resin core was built up on the adhesive layer. Teeth were then prepared for microtensile bond testing to evaluate bond strength. The data obtained were submitted to ANOVA and Tukey`s test (alpha = 0.05). Results: Glutaraldehyde primer application significantly improved resin-dentine bond strength. No significant difference was observed when the same experimental adhesive system was applied under either dry or wet dentine conditions. These results allow the first null hypothesis to be rejected and the second to be accepted. Conclusion: Glutaraldehyde may affect demineralized dentine properties leading to improved resin bonding to wet and dry substrates. (C) 2008 Elsevier Ltd. All rights reserved.

Microstructure of highly oriented, hexagonal, boron nitride thin films grown on crystalline silicon by radio frequency plasma-assisted chemical vapor deposition

We present a high‐resolution electron microscopy study of the microstructure of boron nitride thin films grown on silicon (100) by radio‐frequency plasma‐assisted chemical vapor deposition using B2H6 (1% in H2) and NH3 gases. Well‐adhered boron nitride films grown on the grounded electrode show a highly oriented hexagonal structure with the c‐axis parallel to the substrate surface throughout the film, without any interfacial amorphous layer. We ascribed this textured growth to an etching effect of atomic hydrogen present in the gas discharge. In contrast, films grown on the powered electrode, with compressive stress induced by ion bombardment, show a multilayered structure as observed by other authors, composed of an amorphous layer, a hexagonal layer with the c‐axis parallel to the substrate surface and another layer oriented at random

Atomic Force Microscopy Investigation of NI Particles Deposited on Porous Silicon

In this thesis properties and influence of modification techniques of porous silicon were studied by Atomic Force Microscope (AFM). This device permits to visualize the surface topography and to study properties of the samples on atomic scale, which was necessary for recent investigation. Samples of porous silicon were obtained by electrochemical etching. Nickel particles were deposited by two methods: electrochemical deposition and extracting from NiCl2 ethanol solution. Sample growth was conducted in Saint-Petersburg State Electrotechnical University, LETI. Kelvin probe force microscopy (KPFM) and Magnetic force microscopy (MFM) were utilized for detailed information about surface properties of the samples. Measurements showed the difference in morphology correlating with initial growth conditions. Submicron size particles were clearly visible on surfaces of the treated samples. Although their nature was not clarified due to limitations of AFM technique. It is expected that surfaces were covered by nanometer scale Ni particles, which can be verified by implication of RAMAN device.

Air-gap based vertical cavity micro-opto-electro-mechanical Fabry-Perot filters

Mikrooptische Filter sind heutzutage in vielen Bereichen in der Telekommunikation unersetzlich. Wichtige Einsatzgebiete sind aber auch spektroskopische Systeme in der Medizin-, Prozess- und Umwelttechnik. Diese Arbeit befasst sich mit der Technologieentwicklung und Herstellung von luftspaltbasierenden, vertikal auf einem Substrat angeordneten, oberflächenmikromechanisch hergestellten Fabry-Perot-Filtern. Es werden zwei verschiedene Filtervarianten, basierend auf zwei verschiedenen Materialsystemen, ausführlich untersucht. Zum einen handelt es sich dabei um die Weiterentwicklung von kontinuierlich mikromechanisch durchstimmbaren InP / Luftspaltfiltern; zum anderen werden neuartige, kostengünstige Siliziumnitrid / Luftspaltfilter wissenschaftlich behandelt. Der Inhalt der Arbeit ist so gegliedert, dass nach einer Einleitung mit Vergleichen zu Arbeiten und Ergebnissen anderer Forschergruppen weltweit, zunächst einige theoretische Grundlagen zur Berechnung der spektralen Reflektivität und Transmission von beliebigen optischen Schichtanordnungen aufgezeigt werden. Auß erdem wird ein kurzer theoretischer Ü berblick zu wichtigen Eigenschaften von Fabry-Perot-Filtern sowie der Möglichkeit einer mikromechanischen Durchstimmbarkeit gegeben. Daran anschließ end folgt ein Kapitel, welches sich den grundlegenden technologischen Aspekten der Herstellung von luftspaltbasierenden Filtern widmet. Es wird ein Zusammenhang zu wichtigen Referenzarbeiten hergestellt, auf denen diverse Weiterentwicklungen dieser Arbeit basieren. Die beiden folgenden Kapitel erläutern dann ausführlich das Design, die Herstellung und die Charakterisierung der beiden oben erwähnten Filtervarianten. Abgesehen von der vorangehenden Epitaxie von InP / GaInAs Schichten, ist die Herstellung der InP / Luftspaltfilter komplett im Institut durchgeführt worden. Die Herstellungsschritte sind ausführlich in der Arbeit erläutert, wobei ein Schwerpunktthema das trockenchemische Ä tzen von InP sowie GaInAs, welches als Opferschichtmaterial für die Herstellung der Luftspalte genutzt wurde, behandelt. Im Verlauf der wissenschaftlichen Arbeit konnten sehr wichtige technische Verbesserungen entwickelt und eingesetzt werden, welche zu einer effizienteren technologischen Herstellung der Filter führten und in der vorliegenden Niederschrift ausführlich dokumentiert sind. Die hergestellten, für einen Einsatz in der optischen Telekommunikation entworfenen, elektrostatisch aktuierbaren Filter sind aus zwei luftspaltbasierenden Braggspiegeln aufgebaut, welche wiederum jeweils 3 InP-Schichten von (je nach Design) 357nm bzw. 367nm Dicke aufweisen. Die Filter bestehen aus im definierten Abstand parallel übereinander angeordneten Membranen, die über Verbindungsbrücken unterschiedlicher Anzahl und Länge an Haltepfosten befestigt sind. Da die mit 357nm bzw. 367nm vergleichsweise sehr dünnen Schichten freitragende Konstrukte mit bis zu 140 nm Länge bilden, aber trotzdem Positionsgenauigkeiten im nm-Bereich einhalten müssen, handelt es sich hierbei um sehr anspruchsvolle mikromechanische Bauelemente. Um den Einfluss der zahlreichen geometrischen Strukturparameter studieren zu können, wurden verschiedene laterale Filterdesigns implementiert. Mit den realisierten Filter konnte ein enorm weiter spektraler Abstimmbereich erzielt werden. Je nach lateralem Design wurden internationale Bestwerte für durchstimmbare Fabry-Perot-Filter von mehr als 140nm erreicht. Die Abstimmung konnte dabei kontinuierlich mit einer angelegten Spannung von nur wenigen Volt durchgeführt werden. Im Vergleich zu früher berichteten Ergebnissen konnten damit sowohl die Wellenlängenabstimmung als auch die dafür benötigte Abstimmungsspannung signifikant verbessert werden. Durch den hohen Brechungsindexkontrast und die geringe Schichtdicke zeigen die Filter ein vorteilhaftes, extrem weites Stopband in der Größ enordnung um 550nm. Die gewählten, sehr kurzen Kavitätslängen ermöglichen einen freien Spektralbereich des Filters welcher ebenfalls in diesen Größ enordnungen liegt, so dass ein weiter spektraler Einsatzbereich ermöglicht wird. Während der Arbeit zeigte sich, dass Verspannungen in den freitragenden InPSchichten die Funktionsweise der mikrooptischen Filter stark beeinflussen bzw. behindern. Insbesondere eine Unterätzung der Haltepfosten und die daraus resultierende Verbiegung der Ecken an denen sich die Verbindungsbrücken befinden, führte zu enormen vertikalen Membranverschiebungen, welche die Filtereigenschaften verändern. Um optimale Ergebnisse zu erreichen, muss eine weitere Verbesserung der Epitaxie erfolgen. Jedoch konnten durch den zusätzlichen Einsatz einer speziellen Schutzmaske die Unterätzung der Haltepfosten und damit starke vertikale Verformungen reduziert werden. Die aus der Verspannung resultierenden Verformungen und die Reaktion einzelner freistehender InP Schichten auf eine angelegte Gleich- oder Wechselspannung wurde detailliert untersucht. Mittels Weisslichtinterferometrie wurden lateral identische Strukturen verglichen, die aus unterschiedlich dicken InP-Schichten (357nm bzw. 1065nm) bestehen. Einen weiteren Hauptteil der Arbeit stellen Siliziumnitrid / Luftspaltfilter dar, welche auf einem neuen, im Rahmen dieser Dissertation entwickelten, technologischen Ansatz basieren. Die Filter bestehen aus zwei Braggspiegeln, die jeweils aus fünf 590nm dicken, freistehenden Siliziumnitridschichten aufgebaut sind und einem Abstand von 390nm untereinander aufweisen. Die Filter wurden auf Glassubstraten hergestellt. Der Herstellungsprozess ist jedoch auch mit vielen anderen Materialien oder Prozessen kompatibel, so dass z.B. eine Integration mit anderen Bauelemente relativ leicht möglich ist. Die Prozesse dieser ebenfalls oberflächenmikromechanisch hergestellten Filter wurden konsequent auf niedrige Herstellungskosten optimiert. Als Opferschichtmaterial wurde hier amorph abgeschiedenes Silizium verwendet. Der Herstellungsprozess beinhaltet die Abscheidung verspannungsoptimierter Schichten (Silizium und Siliziumnitrid) mittels PECVD, die laterale Strukturierung per reaktiven Ionenätzen mit den Gasen SF6 / CHF3 / Ar sowie Fotolack als Maske, die nasschemische Unterätzung der Opferschichten mittels KOH und das Kritisch-Punkt-Trocken der Proben. Die Ergebnisse der optischen Charakterisierung der Filter zeigen eine hohe Ü bereinstimmung zwischen den experimentell ermittelten Daten und den korrespondierenden theoretischen Modellrechnungen. Weisslichtinterferometermessungen der freigeätzten Strukturen zeigen ebene Filterschichten und bestätigen die hohe vertikale Positioniergenauigkeit, die mit diesem technologischen Ansatz erreicht werden kann.

Lithography-free micro- and nanostructuring based on conventional plasma etching

In now-a-days semiconductor and MEMS technologies the photolithography is the working horse for fabrication of functional devices. The conventional way (so called Top-Down approach) of microstructuring starts with photolithography, followed by patterning the structures using etching, especially dry etching. The requirements for smaller and hence faster devices lead to decrease of the feature size to the range of several nanometers. However, the production of devices in this scale range needs photolithography equipment, which must overcome the diffraction limit. Therefore, new photolithography techniques have been recently developed, but they are rather expensive and restricted to plane surfaces. Recently a new route has been presented - so-called Bottom-Up approach - where from a single atom or a molecule it is possible to obtain functional devices. This creates new field - Nanotechnology - where one speaks about structures with dimensions 1 - 100 nm, and which has the possibility to replace the conventional photolithography concerning its integral part - the self-assembly. However, this technique requires additional and special equipment and therefore is not yet widely applicable. This work presents a general scheme for the fabrication of silicon and silicon dioxide structures with lateral dimensions of less than 100 nm that avoids high-resolution photolithography processes. For the self-aligned formation of extremely small openings in silicon dioxide layers at in depth sharpened surface structures, the angle dependent etching rate distribution of silicon dioxide against plasma etching with a fluorocarbon gas (CHF3) was exploited. Subsequent anisotropic plasma etching of the silicon substrate material through the perforated silicon dioxide masking layer results in high aspect ratio trenches of approximately the same lateral dimensions. The latter can be reduced and precisely adjusted between 0 and 200 nm by thermal oxidation of the silicon structures owing to the volume expansion of silicon during the oxidation. On the basis of this a technology for the fabrication of SNOM calibration standards is presented. Additionally so-formed trenches were used as a template for CVD deposition of diamond resulting in high aspect ratio diamond knife. A lithography-free method for production of periodic and nonperiodic surface structures using the angular dependence of the etching rate is also presented. It combines the self-assembly of masking particles with the conventional plasma etching techniques known from microelectromechanical system technology. The method is generally applicable to bulk as well as layered materials. In this work, layers of glass spheres of different diameters were assembled on the sample surface forming a mask against plasma etching. Silicon surface structures with periodicity of 500 nm and feature dimensions of 20 nm were produced in this way. Thermal oxidation of the so structured silicon substrate offers the capability to vary the fill factor of the periodic structure owing to the volume expansion during oxidation but also to define silicon dioxide surface structures by selective plasma etching. Similar structures can be simply obtained by structuring silicon dioxide layers on silicon. The method offers a simple route for bridging the Nano- and Microtechnology and moreover, an uncomplicated way for photonic crystal fabrication.

Plasma polymerization of C[subscript 4]F[subscript 8] thin film on high aspect ratio silicon molds

High aspect ratio polymeric micro-patterns are ubiquitous in many fields ranging from sensors, actuators, optics, fluidics and medical. Second generation PDMS molds are replicated against first generation silicon molds created by deep reactive ion etching. In order to ensure successful demolding, the silicon molds are coated with a thin layer of C[subscript 4]F[subscript 8] plasma polymer to reduce the adhesion force. Peel force and demolding status are used to determine if delamination is successful. Response surface method is employed to provide insights on how changes in coil power, passivating time and gas flow conditions affect plasma polymerization of C[subscript 4]F[subscript 8].

Characterization of anodic silicon oxide films grown in room temperature ionic liquids

The electroformation of silicon oxide was performed in two room temperature ionic liquids (RTIL), 1-butyl-3-methyl-imidazolium bis(trifluoromethane sulfonyl) imide (BMITFSI) and N-n-butyl-N-methylpiperidinium bis(trifluoromethane sulfonyl) imide (BMPTFSI). This phenomenon was studied by electrochemical techniques and it was observed that the oxide growth follows a high-field mechanism. X-ray Photoelectron Spectroscopy experiments have shown that a non-stoichiometric oxide film was formed, related to the low water content present in both RTILs (< 30 ppm). The roughness values obtained by using AFM technique of the silicon surface after etching with HF was 1.5 nm (RMS). The electrochemical impedance spectroscopy at low frequencies range was interpreted as a resistance in parallel with a CPE element, the capacitance obtained was associated with the dielectric nature of the oxide formed and the resistance was interpreted considering the chemical dissolution of the oxide by the presence of the TFSI anion. The CPE element was associated with the surface roughness and the very thin oxide film obtained. (C) 2007 Elsevier Ltd. All rights reserved.

Effects of Surface Hydration and Application Method on the Bond Strength of Self-Etching Adhesives to Dentin

The effect of application methods and dentin hydration on the bond strength of three self-etching adhesives (SEA) were evaluated; 195 extracted bovine incisors were used. The buccal surface was ground in order to expose the dentin, which remained 2-mm minimum thickness, measured by a thickness meter through an opening on the lingual surface. Adper Single Bond 2 (TM) was used for the control group. The SEA were applied following two modes of application: passive or active and two hydration states of the dentin surface-dry and wet. After light-curing, composite buildups were made using Grandio (TM) composite. The specimens were sectioned and tested with a microtensile bond strength test. The application method and the hydration state resulted in statistical differences (p = 0.000) making the values of active application for mu TBS to dentin higher than passive application. The wet surfaces showed higher mu TBS to dentin ratios than dry surfaces. There were no statistical differences in mu TBS among the SEA tested but there were differences regarding to control group.

BOND STRENGTH DURABILITY of SELF-ETCHING ADHESIVES and RESIN CEMENTS TO DENTIN

Objectives: To evaluate the microtensile bond strength (mu TBS) of one-(Xeno III, Dentsply) and two-step (Tyrian-One Step Plus, Bisco) self-etching adhesive systems bonded to dentin and cemented to chemically cured (C&B Metabond) or light-cured paste of a dual-cure resin cement (Variolink II, Ivoclar) within a short (24 h) and long period of evaluation (90 days). Material and Methods: Forty recently extracted human molars had their roots removed and their occlusal dentin exposed and ground wet with 600-grit SiC paper. After application of one of the adhesives, the resin cement was applied to the bonded surface and a composite resin block was incrementally built up to a height of 5 mm (n = 10). The restored teeth were stored in distilled water at 37 C for 7 days. The teeth were then cut along two axes (x and y), producing beam-shaped specimens with 0.8 mm(2) cross-sectional area, which were subjected to mu TBS testing at a crosshead speed of 0.05 mm/min and stressed to failure after 24 h or 90 days of storage in water. The mu TBS data in MPa were subjected to three-way analysis of variance and Tukey's test (alpha = 0.05). Results: The interaction effect for all three factors was statistically significant (three-way ANOVA, p < 0.001). All eight experimental means (MPa) were compared by the Tukey's test (p < 0.05) and the following results were obtained: Tyrian-One Step Plus /C&B/24 h (22.4 +/- 7.3); Tyrian-One Step Plus /Variolink II/24 h (39.4 +/- 11.6); Xeno III/C&B/24 h (40.3 +/- 12.9); Xeno III/Variolink II/24 h (25.8 +/- 10.5); Tyrian-One Step Plus / C&B/90 d (22.1 +/- 12.8) Tyrian-One Step Plus/VariolinkII/90 d (24.2 +/- 14.2); Xeno III/C&B/90 d (27.0 +/- 13.5); Xeno III/Variolink II/90 d (33.0 +/- 8.9). Conclusions: Xeno III/Variolink II was the luting agent/adhesive combination that provided the most promising bond strength after 90 days of storage in water.

Effect of dentinal surface preparation on bond strength of self-etching adhesive systems

The aim of this study was to evaluate the effects of dentin surface treatments on the tensile bond strength (TBS) of the self-etching primer Clearfil SE Bond (CSE) and the one-step self-etching One-Up Bond F (OUB). The exposed flat dentin surfaces of twenty-four sound third molars were prepared with diamond bur at high-speed, carbide bur at low-speed or wet ground with #600 grit SiC paper. The adhesive systems were applied to the dentin surfaces and light-cured according to the manufacturers' instructions. A 6-mm high composite crown was incrementally built-up and each increment was light-cured for 40 seconds. After being stored in water (37°C/24 h), the samples were serially sectioned parallel to the long axis, forming beams (n = 20) with a cross-sectional area of approximately 0.8 mm 2. The specimens were tested in a Universal Testing Machine at 0.5 mm/min. The cross-sectional area was measured and the results (MPa) were analyzed by two-way ANOVA and Tukey Test (p < 0.05). Overall, the groups treated with CSE exhibited the highest TBS for all surface treatments. Dentin surfaces prepared with carbide bur at low speed reduced TBS in the CSE group; however, OUB was not affected by surface treatments. The effect of surface abrasive methods on TBS was material-dependent.