Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.

Design of high power tapered waveguide semiconductor lasers

An advanced beam propagation model was developed to show that the far field narrows with good suppression of higher order modes for an appropriate temperature rise, without significant power penalty. To verify the accuracy of the model, the dependence of far field pattern on bias conditions were assessed both experimentally and theoretically, initially under pulsed conditions to reduce thermal effects. The results highlight the optimum taper angle and the role of local heating effects.

Wavelength conversion, regeneration and tone manipulation using integrated semiconductor lasers and amplifiers

An integrated semiconductor optical amplifier/distributed feedback (SOA/DFB) laser that show promise as a simple all-optical wavelength conversion device together with useful simultaneous functions such as 2R regeneration and the ability to remove a wavelength identifying tone is presented. Wavelength conversion performance at 20Gb/s and 40Gb/s can be obtained with this laser.