Formation of beta-nickel hydroxide plate-like structures under mild conditions and their optical properties

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Synthesis and Characterization of Hyperbranched Poly(ether amide)s with Thermoresponsive Property and Unexpected Strong Blue Photoluminescence

A facile and efficient strategy for the syntheses of novel hyperbranched poly(ether amide)s (HPEA) from multihydroxyl primary amines and (meth)acryloyl chloride has been developed. The chemical structures of the HPEAs were confirmed by IR and NMR spectra. Analyses of SEC (size exclusion chromatography) and viscosity characterizations revealed the highly branched structures of the polymers obtained. The resultant hyperbranched polymers contain abundant hydroxyl groups. The thermoresponsive property was obtained from in situ surface modification of abundant OH end groups with N-isopropylacrylamide (NIPAAm). The study oil temperature-dependent characteristics has revealed that NIPAAm-g-HPEA exhibits an adjustable lower critical solution temperature (LCST) of about 34-42 degrees C depending on the grafting degree. More interestingly, the work provided an interesting phenomenon where the HPEA backbones exhibited strong blue photoluminescence.

Property-performance control of multidimensional, hierarchical, single-crystalline ZnO nanoarchitectures

Diverse morphologies of multidimensional hierarchical single-crystalline ZnO nanoarchitectures including nanoflowers, nanobelts, and nanowires are obtained by use of a simple thermal evaporation and vapour-phase transport deposition technique by placing Au-coated silicon substrates in different positions inside a furnace at process temperatures as low as 550 °C. The nucleation and growth of ZnO nanostructures are governed by the vapour–solid mechanism, as opposed to the commonly reported vapour–liquid–solid mechanism, when gold is used in the process. The morphological, structural, compositional and optical properties of the synthesized ZnO nanostructures can be effectively tailored by means of the experimental parameters, and these properties are closely related to the local growth temperature and gas-phase supersaturation at the sample position. In particular, room-temperature photoluminescence measurements reveal an intense near-band-edge ultraviolet emission at about 386 nm for nanobelts and nanoflowers, which suggests that these nanostructures are of sufficient quality for applications in, for example, optoelectronic devices.

Visible photoluminescence from plasma-synthesized SiO 2-buffered SiN x films : effect of film thickness and annealing temperature

The effect of the film thickness and postannealing temperature on visible photoluminescence (PL) from Si Nx films synthesized by plasma-assisted radio frequency magnetron sputtering on Si O2 buffer layers is investigated. It is shown that strong visible PL is achieved at annealing temperatures above 650 °C. The optimum annealing temperature for the maximum PL yield strongly depends on the film thickness and varies from 800 to 1200°C. A comparative composition-structure-property analysis reveals that the PL intensity is directly related to the content of the Si-O and Si-N bonds in the Si Nx films. Therefore, sufficient oxidation and moderate nitridation of Si Nx Si O2 films during the plasma-based growth process are crucial for a strong PL yield. Excessively high annealing temperatures lead to weakened Si-N bonds in thinner Si Nx films, which eventually results in a lower PL intensity.

Correlations between mechanical and photoluminescence properties in Eu doped sodium bismuth titanate

Nanoindentation technique is utilized to examine mechanical property variation in Eu doped Na0.5Bi0.5 TiO3 (NBT). Doping levels of Eu in NBT is systematically varied. Dilute doping results in a linear reduction in both modulus and hardness. At higher concentrations, a recovery of the mechanical properties (to undoped NBT values) is observed. These experimental trends mirror variations in the optical emission intensities with Eu concentration. Observed trends are rationalized on the basis of a model, which hypothesizes phase segregation beyond a critical Eu doping level. Such segregation leads to the formation of pure NBT, nano-Eu saturated NBT, and nano-mixed Eu oxides in the microstructure. Pure NBT is optically inactive, while saturated Eu:NBT is a much better emitter when compared to europium oxide. Hence beyond the critical concentration, luminescence signal comes primarily from the saturated Eu:NBT phase. The model presented is supported by nanoindentation, and spectroscopic results. (C) 2013 Elsevier Ltd. All rights reserved.

Effect of thermal annealing on dual photoluminescence emission characteristics of chemically synthesized uncapped Mn2+ doped ZnS quantum dots

Dual photoluminescence (PL) emission characteristics of Mn2+ doped ZnS (ZnS:Mn) quantum dots (QDs) have drawn a lot of attention recently. However, here we report the effect of thermal annealing on the PL emission characteristics of uncapped ZnS:Mn QDs of average sizes similar to 2-3 nm, synthesized by simple chemical precipitation method by using de-ionized (DI) water at room temperature. As-synthesized samples show dual PL emissions, having one UV PL band centred at similar to 400 nm and the other in the visible region similar to 610 nm. But when the samples are isochronally annealed for 2 h at 100-600 degrees C temperature range in air, similar to 90% quenching of Mn2+ related visible PL emission intensity takes place at the annealing temperature of 600 degrees C. X-ray diffraction data show that the as-synthesized cubic ZnS has been converted to wurtzite ZnO at 600 degrees C annealing temperature. The nanostructural properties of the samples are also determined by transmission electron micrograph, electron probe micro-analyser and UV-vis spectrophotometry. The photocatalytic property of the annealed ZnS:Mn sample has been demonstrated and photo-degradation efficiency of the as-synthesized and 600 degrees C annealed ZnS:Mn sample has been found out to be similar to 35% and similar to 61%, respectively, for the degradation of methylene blue dye under visible light irradiation. The synthesized QDs may find significant applications in future optoelectronic devices. (C) 2014 Elsevier B.V. All rights reserved.

Evaporation-Condensation Synthesis and Optical Property of In(2)O(3)Octahedrons

Synthesis of In2O3 octahedrons is carried out successfully by heating Indium metal pieces in air ambient. The sample is characterized by scanning electron microscopy (SEM), Energy dispersive X-ray spectroscope (EDS), X-ray diffraction (XRD) and Raman spectroscopy. The as-prepared In2O3 octahedrons are highly crystalline and exhibit body centered cubic structure. Room temperature and temperature (293-453K) dependence photoluminescence reveals a deep levelbroad emission of yellowish-orange spectra centered around 605 nm. The emission is due to the presence of defect levels in the band gap of materials.

Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method

Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.

Synthesis and photoluminescence, field emission properties of stalactite-like ZnS-ZnO composite nanostructures

Wurtzite stalactite-like quasi-one-dimensional ZnS nanoarrays with ZnO protuberances were synthesized through a thermal evaporation route. The structure and morphology of the samples are studied and the growth mechanism is discussed. X-ray diffraction (XRD) results show both the ZnS stem and the ZnO protuberances have wurtzite structure and show preferred [001] oriented growth. The photoluminescence and field emission properties have also been investigated. Room temperature photoluminescence result shows it has a strong green light emission, which has potential application for green light emitter. Experimental results also show that the stalactite arrays have a good field emission property, with turn-on field of 11.4 V/mu m, and threshold field of 16 V/mu m. The ZnO protuberances on the ZnS stem might enhance the field emission notably.

Molecular beam epitaxy growth and photoluminescence of type-II (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well

We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/In-y Ga1-yAs)/GaAs bilayer quantum well (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-II band alignment of the interface between the GaAsSb and InGaAs layers.

The effect of a combined InAlAs and GaAs strained buffer layer on the structure and optical property of InAs quantum dots

The character of InAs quantum dots (QD) directly deposited on a combined InAlAs-GaAs (XML) strained buffer layer (SBL) has been investigated. This growth technique realizes high-density QD (5.88 x 10(10) cm(-2)) by changing the thickness of GaAs in InAlAs-GaAs SBL. The dependence of the density and the aspect ratio of QD on the GaAs thickness has been discussed in detail. The photoluminescence (PL) measurements demonstrate an obvious redshift with the increase of GaAs thickness. In addition, the deposition of InAs QDs grown on the combined InAlAs-GaAs SBL has an important effect of the QD properties. The ordered QD array can be observed from the sample deposited by atomic layer epitaxy, of which the PL peak shows an obvious redshift in comparison to the molecular beam epitaxy (MBE) QDs when the GaAs thicknesses are equal. (c) 2004 Elsevier B.V. All rights reserved.

Origin of deep level defect related photoluminescence in annealed InP

Deep level defects in annealed InP have been studied by using photoluminescence spectroscopy (PL), thermally stimulated current (TSC), deep level transient spectroscopy (DLTS), and positron annihilation lifetime (PAL). A noticeable broad PL peak centered at 1.3 eV has been observed in the InP sample annealed in iron phosphide ambient. Both the 1.3 eV PL emission and a defect at E-C-0.18 eV correlate with a divacancy detected in the annealed InP sample. The results make a divacancy defect and related property identified in the annealed InP. (c) 2006 American Institute of Physics.

Recombination property of nitrogen-acceptor-bound states in ZnO

The recombination property of nitrogen (N)-related acceptor-bound states in ZnO has been investigated by photoluminescence (PL), time-resolved PL, and selective PL. Several possible recombination processes were discussed by analyzing the relaxation and recombination properties under large Coulomb interaction. It is strongly suggested that bound exciton emission dominates the recombination process related to the N acceptor. The recombination lifetime is 750 ps and the binding energy is 67 meV for N-acceptor-bound exciton at low temperature. (c) 2006 American Institute of Physics.

Photoluminescence of self-assembled InAs/GaAs quantum dots covered by InAlAs and InGaAs combination strain-reducing layer

Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As (x = 0.2,0.3) and 3-nm In0.2Ga0.8As combination strain-reducing layer are fabricated, whose height can take up to 30-46 nm. The luminescence emission at a long-wavelength of 1.33 mum and the energy separation between the ground and the first-excited state of 86 meV are observed at room temperature. Furthermore, comparative study proves that the energy separation can increase to 91 meV by multiple stacking.

Surface morphology and optical property of 1.3 mu m In0.5Ga0.5As/GaAs self-organized quantum dots grown by MBE

Surface morphology and optical properties of 1.3 mum self-organized InGaAs/GaAs quantum dots structure grown by molecular beam epitaxy have been investigated by atomic force microscopy and photoluminescence measurements. It has been shown that the surface morphology evolution and emission wavelengths of InGaAs/GaAs QDs can be controlled effectively via cycled monolayer deposition methods due to the reduction of the surface strain. Our results provide important information for optimizing the epitaxial parameters for obtaining 1.3 mum long wavelength emission quantum dots structures. (C) 2002 Elsevier Science B.V. All rights reserved.