In Situ Preparation and Luminescent Properties of CeF3 and CeF3:Tb3+ Nanoparticles and Transparent CeF3:Tb3+/PMMA Nanocomposites in the Visible Spectral Range

CeF3 and CeF3:Tb3+ nanoparticles were prepared by reverse microemulsion with a functional monomer, methyl methacrylate (MMA), as the oil phase, and CeF3:Tb3+/poly (methyl methacrylate) (PMMA) nanocomposites were obtained via polymerization of the MMA monomer. The nanoparticles and nanocomposites have been well characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), low- and high-resolution transmission electron microscope (TEM), selected-area electron diffraction (SAED), thermogravimetric analysis (TGA), UV/vis transmission spectra, photoluminescence excitation, and emission spectra and luminescence decays. The well-crystallized CeF3 and CeF3:Tb3+ nanoparticles are spherical with a mean diameter of 15 nm. They show the characteristic emission of Ce3+ 5d-4f (313 nm, D-2-F-2(5/2); 323 nm, D-2-F-2(7/2)) and Tb3+ D-5(4)-F-7(J) (J = 6-3, with D-5(4)-F-7(5) green emission at 541 nm as the strongest one) transitions, respectively.

In situ preparation and luminescent properties of LaPO4:Ce3+, Tb3+ nanoparticles and transparent LaPO4:Ce3+, Tb3+/PMMA nanocomposite

LaPO4:Ce3+, Tb3+ nanoparticles were prepared by the reverse microemulsion with functional monomer, methyl methacrylate (MMA) as oil phase, and LaPO4:Ce3+, Tb3+/poly(methyl methacrylate) (PMMA) nanocomposite was obtained via polymerization of MMA monomer. The nanoparticles and nanocomposite have been well characterized by XRD, SEM, TEM, UV/vis spectrum, photoluminescence excitation and emission spectra and luminescence decays. The obtained solid nanocomposite LaPO4:Ce3+, Tb3+/PMMA is highly transparent and exhibits strong green photoluminescence upon UV excitation, due to the integration of luminescent LaPO4:Ce3+, Tb3+ nanoparticles. The luminescent lifetime of Tb3+ is determined to be 1.25 ms in the nanocomposite. (C) 2009 Elsevier Inc. All rights reserved.

Patterning and photolumine scent properties of perovskite-type organic/inorganic hybrid luminescent films by soft lithography

Perovskite-type organic/inorganic hybrid layered compound (C6H5C2H4NH3)(2)PbI4 was synthesized. The patterning Of (C6H5C2H4NH3)(2)PbI4 thin films on silicon substrate was realized by the micromolding in capillaries (MIMIC) process, a kind of soft lithography. Bright green luminescent stripes with different widths (50, 15, 0.8 mum) have been obtained. The structure and optical properties Of (C6H5C2H4NH3)(2)PbI4 films were characterized by X-ray diffraction (XRD), UV/Vis absorption and photoluminescence excitation and emission spectra, respectively. It is shown that the organic-inorganic layered (C6H5C2H4NH3)(2)PbI4 film was c-axis oriented, paralleling to the substrate plane. Green exciton emission at 525 nm was observed in the film, and the explanations for it were given.

Luminescence properties of RP1-xVxO4: A (R=Y, Gd, La; A=Sm3+Er3+ x=0, 0.5, 1) thin films prepared by pechini sol-gel process

Thin film phosphors with compositions of RP1-xVxO4: A (R = Y, Gd, La; A = Sm3+, Et3+; x = 0, 0.5, 1) have been prepared by a Pechini sol-gel process. X-Ray diffraction, atomic force microscopy (AFM), photoluminescence excitation and emission spectra were utilized to characterize the thin film phosphors. The results of XRD showed that a solid solution formed in YVxP1-xO4: A film series from x = 0 to x = 1 with zircon structure, which also held for GdVO4: A film. However, LaVO4: A film crystallized with a different structure, monazite. AFM study revealed that the phosphor films consisted of homogeneous particles ranging from 90 to 400 nm depending on the compositions. Upon short ultraviolet excitation, the films exhibit the characteristic Sm(3+ 4)G(5/2)-H-6(J) (J=5/2, 7/2, 9/2) emission in the red region and Er3+ H-2(11/2), S-4(3/2)-I-4(15/2) emission in the green region, respectively With the increase of x values in YVxP1-xO4: SM3+ (Er3+) films, the emission intensity Of SM3+ (Er3+) increases due to the increase of energy transfer probability from VO43- to Sm3+ (Er3+). Due to the structural effects, the Sm3+ (Er3+) shows similar spectral properties in YVO4 and GdVO4 films, which are much different from those in LaVO4 film.

Patterning and optical properties rhodamine B-doped organic-inorganic silica films fabricated by sol-gel soft lithography

Rhodamine B (RB)-doped organic-inorganic silica films and their patterning were fabricated by a sol-gel process combined with a soft lithography. The resulted film samples were characterized by atomic force microscope (AFM), optical microscope and UV/Vis absorption and photoluminescence excitation and emission spectra. The effects of the concentration of the RB dye and heat treatment temperature on the optical properties of the hybrid silica films have been studied. Four kinds of patterning structures with film line widths of 5, 10, 20 and 50 mum have been obtained by micromolding in capillaries by a soft lithography technique. The RB-doped hybrid silica films present a red color, with an excitation and emission bands around 564 and 585 mum, respectively. With increasing the RB concentration, the emission intensity of the RB-doped hybrid silica films increases and the emission maximum presents a red shift. The emission intensity of the films decreases with increasing the heat treatment temperatures.

PROPERTIES OF ZNS THIN-FILMS PREPARED BY 248-NM PULSED-LASER DEPOSITION

Pulsed laser deposition (PLD) from a hot pressed manganese doped ZnS target using a KrF laser, has produced a high rate deposition method for growing luminescent thin films. Good stoichiometric quality and typical luminescent crystal structures have been observed with a predominant hexagonal phase and little evidence of the cubic phase. The luminescent characteristics were determined by cathodoluminescence and photoluminescence excitation and stable electroluminescence was observed under pulsed dc conditions with a minimum brightness of 150 cd/m2. PLD film characteristics are compared with those observed in radio-frequency sputtered samples.

Radiation-induced defects in quantum-size structures of A3B5 semiconductors

As estruturas quânticas de semicondutores, nomeadamente baseadas em GaAs, têm tido nos últimos vinte anos um claro desenvolvimento. Este desenvolvimento deve-se principalmente ao potencial tecnológico que estas estruturas apresentam. As aplicações espaciais, em ambientes agressivos do ponto de vista do nível de radiação a que os dispositivos estão sujeitos, motivaram todo o desenrolar de estudos na área dos defeitos induzidos pela radiação. As propriedades dos semicondutores e dos dispositivos de semicondutores são altamente influenciadas pela presença de defeitos estruturais, em particular os induzidos pela radiação. As propriedades dos defeitos, os processos de criação e transformação de defeitos devem ser fortemente alterados quando se efectua a transição entre o semicondutor volúmico e as heteroestruturas de baixa dimensão. Este trabalho teve como principal objectivo o estudo de defeitos induzidos pela radiação em estruturas quânticas baseadas em GaAs e InAs. Foram avaliadas as alterações introduzidas pelos defeitos em estruturas de poços quânticos e de pontos quânticos irradiadas com electrões e com protões. A utilização de várias técnicas de espectroscopia óptica, fotoluminescência, excitação de fotoluminescência e fotoluminescência resolvida no tempo, permitiu caracterizar as diferentes estruturas antes e após a irradiação. Foi inequivocamente constatada uma maior resistência à radiação dos pontos quânticos quando comparados com os poços quânticos e os materiais volúmicos. Esta resistência deve-se principalmente a uma maior localização da função de onda dos portadores com o aumento do confinamento dos mesmos. Outra razão provável é a expulsão dos defeitos dos pontos quânticos para a matriz. No entanto, a existência de defeitos na vizinhança dos pontos quânticos promove a fuga dos portadores dos níveis excitados, cujas funções de onda são menos localizadas, provocando um aumento da recombinação nãoradiativa e, consequentemente, uma diminuição da intensidade de luminescência dos dispositivos. O desenvolvimento de um modelo bastante simples para a estatística de portadores fora de equilíbrio permitiu reproduzir os resultados de luminescência em função da temperatura. Os resultados demonstraram que a extinção da luminescência com o aumento da temperatura é determinada por dois factores: a redistribuição dos portadores minoritários entre os pontos quânticos, o poço quântico e as barreiras de GaAs e a diminuição na taxa de recombinação radiativa relacionada com a dependência, na temperatura, do nível de Fermi dos portadores maioritários.

MAGNETIC FIELD INDUCED NEAR-BAND-GAP OPTICAL PROPERTIES IN EuTe LAYERS

The magnetic response of the near-band-edge optical properties is studied in EuTe layers. In several magneto-optical experiments, the absorption and emission are described as well as the related Stokes shift. Specifically, we present the first experimental report of the photoluminescence excitation (PLE) spectrum in Faraday configuration. The PLE spectra shows to be related with the absorption spectra through the observation of resonance between the excitation light and the zero-field band-gap. A new emission line appears at 1.6 eV at a moderate magnetic field in the photoluminescence (PL) spectra. Furthermore, we examine the absorption and PL red-shift induced by the magnetic field in the light of the d-f exchange interaction energy involved in these processes. Whereas the absorption red-shift shows a quadratic dependence on the field, the PL red-shift shows a linear dependence which is explained by spin relaxation of the excited state.

Optical and structural properties of GaAs/GaInP quantum wells grown by Chemical Beam Epitaxy

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Visible to infrared energy conversion in Pr3+-Yb3+ co-doped fluoroindate glasses

Processes involving visible to infrared energy conversion are presented for Pr3+-Yb3+ co-doped fluoroindate glasses. The emission in the visible and infrared regions, the luminescence decay time of the Pr 3+:3P0 → 3H4 (482 nm), Pr3+:1D2 → 3H6 (800 nm), Yb3+:2F5/2 → 2F 7/2 (1044 nm) transitions and the photoluminescence excitation spectra were measured in Pr3+ samples and in Pr3+-Yb 3+ samples as a function of the Yb3+ concentration. In addition, energy transfer efficiencies were estimated from Pr3+: 3P0 and Pr3+:1D2 levels to Yb3+:2F7/2 level. Down-Conversion (DC) emission is observed due to a combination of two different processes: 1-a one-step cross relaxation (Pr3+:3P0 → 1G4; Yb3+:2F7/2 → 2F5/2) resulting in one photon emitted by Pr3+ (1G4 → 3H5) and one photon emitted by Yb3+ (2F7/2 → 2F5/2); 2-a resonant two-step first order energy transfer, where the first part of energy is transferred to Yb3+ neighbor through cross relaxation (Pr3+:3P0 → 1G4; Yb3+:2F7/2 → 2F5/2) followed by a second energy transfer step (Pr 3+:1G4 → 3H4; Yb3+:2F7/2 → 2F5/2). A third process leading to one IR photon emission to each visible photon absorbed involves cross relaxation energy transfer (Pr3+: 1D2 → 3F4; Yb 3+:2F7/2 → 2F5/2). © 2013 Elsevier B.V. All rights reserved.

Photo and electroluminescence behavior of Tb(ACAC)(3)phen complex used as emissive layer on organic light emitting diodes

This work shows the luminescence properties of a rare-earth organic complex, the Tb(ACAC)(3)phen. The results show the (5)D(4)->(7)F(3,4,5,6) transitions with no influence of the ligand. The photoluminescence excitation spectrum is tentatively interpreted by the ligands absorption. An organic light emitting diode (CLED) was made by thermal evaporation using TPD (N,N`-bis(3-methylphenyl)N,N`-diphenylbenzidine) and Alq3 (aluminum-tris(8-hydroxyquinoline)) as hole and electron transport layers, respectively. The emission reproduces the photoluminescence spectrum of the terbium complex at room temperature, with Commission Internationale de l`Eclairage - CIE (x,y) color coordinates of (0.28,0.55). No presence of any bands from the ligands was observed. The potential use of this compound in efficient devices is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Optische Eigenschaften von Pi-konjugierten Modellsystemen

Der erste Teil der vorliegenden Arbeit beschäftigt sich mit der Modifikation der spontanen Emission im Strong Coupling Regime. Hierzu wurden geeignete optische, organische 'Halbleiter'-Mikroresonatoren präpariert.Zunächst wurde das verwendete optisch aktive Material, das J-Aggregat PIC, spektroskopisch charakterisiert. In Transmissionsmessungen an den Mikroresonatoren wurden Vakuum-Rabi-Splitting-Energien zwischen 26 und 52 meV bestimmt. Es wurde die Abhängigkeit der Vakuum-Rabi-Splitting-Energie von der räumlichen Position der optisch aktiven Schicht innerhalb des Mikroresonators untersucht. Durch eine Simulation konnte nachgewiesen werden, daß der Grund für die Asymmetrie des Rabi-Splittings bei einer Verstimmung von 0 meV durch die Asymmetrie des Absorptionsspektrums des optisch aktiven Materials gegeben ist. Weiterhin wurde die Photolumineszenz der Mikroresonatoren untersucht. Es konnte in temperaturabhängigen Messungen gezeigt werden, daß die hochenergetische Bande gegenüber der niederenergetischen Bande bei steigender Temperatur entsprechend einer Boltzmann-Verteilung stärker besetzt wird.Im zweiten Teil der Arbeit wurden die optischen Eigenschaften von dünnen Filmen N´N´Bis (2,6-xylyl)perylene-3,4:9,10-bis(dicarboximide) (DPP-PTCDI) abhängig von der Schichtdicke untersucht. Die Photolumineszenzspektren der dünnen Filme wurden mit zunehmender Dicke durch eine neue Bande bei kleineren Energien bestimmt. Diese Bande kann mit der Emission aus Fallenzuständen erklärt werden. Durch Photolumineszenz-Anregungsspektroskopie konnte gezeigt werden, daß die Fallenzustände auch im Grundzustand existieren. Exzimere können daher als Ursache ausgeschlossen werden.

Emissions- und Anregungsspektroskopie einzelner Halbleiternanokristalle bei kryogenen Temperaturen

In den letzten beiden Jahrzehnten hat sich die Synthese und Charakterisierung nanoskopischer Objekte zu einem wichtigen Forschungszweig entwickelt. Insbesondere die Größenabhängigkeit optischer Eigenschaften in Halbleiternanokristallen eröffnet ein weites Feld an Anwendungsmöglichkeiten. Das Verständnis der größenabhängigen elektronischen Struktur derartiger Nanokristalle ist ein interessantes Feld der Grundlagenforschung, da sie den Übergang vom Atom zum makroskopischen Material repräsentieren. Die Einzigartigkeit eines jeden Nanokristalls aufgrund von Inhomogenitäten in Größe, Form und Oberflächenbeschaffenheit erfordert die Untersuchung der elektronischen Struktur mittels der Spektroskopie einzelner Nanokristalle.rnIn der vorliegenden Arbeit wurde die Photolumineszenz-Anregungsspektroskopie einzelner CdSe/ZnS-Nanokristalle bei kryogenen Temperaturen etabliert und für Partikel verschiedener Größen eingesetzt. Hierzu wurde zunächst ein konfokales Mikroskop aufgebaut, das die Spektroskopie einzelner Emitter in einem Temperaturbereich von 1.4 K bis Raumtemperatur ermöglicht. Die zur Anregungsspektroskopie angewendete Methode erlaubte die Untersuchung des vollen Spektralbereichs des 1S3/2-1Se-Exzitons, der sogenannten exzitonischen Feinstruktur. Obwohl es sich bei dem niederenergetischsten Übergang um einen verbotenen Übergang handelt, konnte dieser regelmäßig detektiert werden. Die Energieseparationen der beiden niederenergetischsten Übergänge wurden in guter Übereinstimmung mit den Ergebnissen des etablierten EMA-Modells gefunden. Für die weiteren Übergänge zeigten die Experimente, dass deren Energiedifferenz zum niederenergetischsten Übergang vom EMA-Modell unterschätzt wird. Abschließend wurde die Polarisationsabhängigkeit der Übergänge in verschiedene Zustände der exzitonischen Feinstruktur untersucht, wobei theoretische Vorhersagen der relativen Orientierung der Übergangsdipole der beiden niederenergetischsten Zustände bestätigt werden konnten.rn

Ultrafast Relaxation Dynamics of Osmium-Polypyridine Complexes in Solution

We present steady-state absorption and emission spectroscopy and femtosecond broadband photoluminescence up-conversion spectroscopy studies of the electronic relaxation of Os(dmbp)3 (Os1) and Os(bpy)2(dpp) (Os2) in ethanol, where dmbp is 4,4′-dimethyl-2,2′-biypridine, bpy is 2,2′-biypridine, and dpp is 2,3-dipyridyl pyrazine. In both cases, the steady-state phosphorescence is due to the lowest 3MLCT state, whose quantum yield we estimate to be ≤5.0 × 10–3. For Os1, the steady-state phosphorescence lifetime is 25 ns. In both complexes, the photoluminescence excitation spectra map the absorption spectrum, pointing to an excitation wavelength-independent quantum yield. The ultrafast studies revealed a short-lived (≤100 fs) fluorescence, which stems from the lowest singlet metal-to-ligand-charge-transfer (1MLCT) state and decays by intersystem crossing to the manifold of 3MLCT states. In addition, Os1 exhibits a 50 ps lived emission from an intermediate triplet state at an energy 2000 cm–1 above that of the long-lived (25 ns) phosphorescence. In Os2, the 1MLCT–3MLCT intersystem crossing is faster than that in Os1, and no emission from triplet states is observed other than the lowest one. These observations are attributed to a higher density of states or a smaller energy spacing between them compared with Os1. They highlight the importance of the energetics on the rate of intersystem crossing.

Energy transfer dynamics of nanocrystal-polymer composites

Steady-state and time-resolved photoluminescence spectroscopy are used to examine the photoluminescent properties of nanocrystal-polymer composites consisting of colloidal PbS nanocrystals blended with poly(2-methoxy-5(2-ethylhexyloxy)-p-phenylene vinylene). Quenching of the emission from the conjugated polymer due to the PbS nanocrystals is observed along with band edge emission from the ligand capped PbS nanocrystals. A decrease in the photoluminescence lifetime of MEH-PPV is also observed in the thin film nanocrystal-polymer composite materials. Photoluminescence excitation spectroscopy of the PbS nanocrystal emission from the composite shows features attributed to MEH-PPV providing evidence of a Forster transfer process.