Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

Synthesis and random laser application of ZnO nano-walls: a review

This review paper summarises briefly some important achievements of our recent research on the synthesis and novel applications of nanostructure ZnO such as honeycomb shaped 3-D (dimension) nano random-walls. A chemical reaction/vapour transportation deposition technique was employed to fabricate this structure on ZnO/SiO2/Si substrate without any catalyst and additive in a simple tube furnace to aim the low-cost and high qualified samples. Random laser action with strong coherent feedback at the wavelength between 375 nm and 395 nm has been firstly observed under 355 nm optical excitation with threshold pumping intensity of 0.38 MW/cm(2).

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

The Effect of Glass Additives on the Microwave Dielectric Properties of Ba(Mg 1 /3Ta2/3)03 Ceramics

The effect of glass additives on the densification , phase evolution, microstructure and microwave dielectric properties of Ba(Mg1;3 Ta2i3)03 (BMT) was investigated . Different weight percentages of quenched glass such as B203 , Si02, B203-SiO2, ZnO-B203, 5ZnO-2B2O3, Al203-SiO2, Na20-2B203.10H20, BaO-B203-SiO2, MgO-B203-SiO2, PbO-B203-SiO2 , ZnO-B203-SiO2 and 2MgO-Al203-5SiO2 were added to calcined BMT precursor . The sintering temperature of the glass -added BMT samples were lowered down to 1300 °C compared to solid-state sintering where the temperature was 1650 °C. The formation of high temperature satellite phases such as Ba5Ta4O15 and Ba7Ta6O22 were found to be suppressed by the glass addition . Addition of glass systems such as B203, ZnO-B203, 5ZnO-2B203 and ZnO-B203-SiO2 improved the densification and microwave dielectric properties. Other glasses were found to react with BMT to form low-Q phases which prevented densification . The microwave dielectric properties of undoped BMT with a densification of 93 . 1 % of the theoretical density were Cr = 24 . 8, Tr = 8 ppm/°C and Q„ x f= 80,000 GHz. The BMT doped with 1.0 wt% of B203 has Q„ x f = 124,700GHz, Cr = 24.2, and T f = -1.3 ppm /°C. The unloaded Q factor of 0.2 wt% ZnO-B203-doped BMT was 136,500 GHz while that of 1.0 wt% of 5ZnO-2B203 added ceramic was Q„ x f= 141,800 GHz . The best microwave quality factor was observed for ZnO -B203-SiO2 (ZBS) glass-added ceramics which can act as a perfect liquid-phase medium for the sintering of BMT. The microwave dielectric properties of 0.2wt% ZBS-added BMT dielectric was Q„ x f= 152,800 GHz, F,= 25.5, and Tr = - 1.5 ppm/°C

PIXE and ICP-AES analysis of early glass unearthed from Xinjiang (China)

Early glasses (about 1066 BC-220 AD) unearthed from Xinjiang of China were chemically characterized by using PIXE and ICP-AES. It was found that these glasses were basically attributed to PbO-BaO-SiO2 system, K2O-SiO2 system, Na2O-CaO-SiO2 system and Na2O-CaO-PbO-SiO2 system. The results from the cluster analysis showed that some glasses had basically similar recipe and technology. The PbO-BaO-SiO2 glass and the K2O-SiO2 glass were thought to come from the central area and the south of ancient China, respectively. The part of the Na2O-CaO-SiO2 glass (including the Na2O-CaO-PbO-SiO2 glass) might be imported from Mesopotamia, while the other part might be locally produced. (c) 2005 Elsevier B.V. All rights reserved.

一批中国古代镶嵌玻璃珠化学成分的检测报告

结合外束质子激发X荧光（proton induced X-ray emission,PIXE）和能量色散X射线荧光（energy dispersive X-ray emission,EDXRF）分析技术,对中国新疆、湖北、四川、广东出土的古代镶嵌玻璃珠的化学成分进行了检测.结果表明：新疆拜城克孜尔墓地出土的西周-春秋时期镶嵌玻璃珠为CaO-MgO-SiO2玻璃,战国时期中国境内的PbO-BaO-SiO2和Na2O-CaO-SiO2镶嵌玻璃珠是同时存在的.本文亦对相关问题进行了一些讨论,并提出了部分今后的工

基于多元统计分析方法对一批中国南方和西南地区的古玻璃成分的研究

采用多元统计方法对四川、重庆、贵州、广西、广东地区出土的100余个古玻璃样品的化学成分数据进行了分析处理。结果表明：中国南方和西南地区的古玻璃制品主要由具有中国特色的铅钡硅酸盐玻璃和钾硅酸盐玻璃组成，可细分为五大系统类别：K2O-CaO（～10wt％）-SiO2系统、K2O-SiO2系统、PbO-BaO-SiO2系统、PbO（～25wt％）-BaO-SiO2系统、CaO-PbO（～40wt％）-BaO—SiO2系统。用因子分析探讨了我国汉代南方和西南地区的玻璃本地生产情况，表明该地区在汉代已经拥有自主生产

中国出土的一批战国古玻璃样品化学成分的检测

对化学成分体系的确定是中国古代玻璃研究中很重要的一个方面，为此，用外束质子激发X荧光技术（PIXE）、电感耦合等离子体原子发射光谱分析（ICP-AES）等方法，对新疆、湖北、河南和重庆等地区出土的一批战国时期的玻璃珠（包含镶嵌玻璃珠）、玻璃璧样品进行了检测。结果表明，战国时期中国境内同时存在PbO-BaO-siO2、K2O-SiO2、Na2O-CaO-SiO2三种硅酸盐玻璃，分布的地域范围从中国的新疆东部一直到长江、黄河流域，以及南方的四川、贵州等地区。中国古代的PbO-BaO-SiO2和K2O-SiO玻

广西合浦地区出土汉代古玻璃的质子激发X荧光分析

采用改进的外束质子激发x射线荧光、电感耦合等离子体原子发射光谱分析等技术，对广西合浦地区出土的一批汉代古玻璃样品的化学成分和结构特性等进行了检测。结果表明：两汉时期，合浦地区的古代玻璃存在K2O—SiO2、PbO-BaO-SiO2、PbO—SiO2、Na2O-K2O-PbO-SiO2、（Na2O）K2O-CaO—SiO2等多种类型，但绝大多数为K2O—SiO2玻璃。表面风化可引起K2O-SiO2玻璃表面K2O等助熔剂的流失和富硅层的形成。综合化学成分以及器型特征，认为我国汉代K2O—SiO2玻璃制造技术可

富铈混合稀土贮氢电极的电化学研究

本论文对贮氢电极进行了恒电流充放电，循环伏安，电位跃，电流跃和交流阻抗等的研究。SEM和X-衍射实验表明贮氢电极的活化过程和制贮氢合金的破碎有关，贮氢电极的放电容量随着循环次数增加而下降是由于贮氢合金的粉化及组成元素的偏析造成的。贮氢电极的循环伏安曲线上在-0.5V（vs HgO/HgO）处出现一个宽的氧化峰，这是由于电极中贮存氢的氧化产生的，并且氧化峰峰位的面积和电极中的贮氢量之间有比例关系，氧化峰峰电流IpαV~（1/2）（v_1扫描速度）。贮氢电极的放电过程是由氢原子在合金中的扩散步骤控制的。用电位跃的方法求出了氢原子在合金中的扩散系数，氢的扩散系数随着电极的不同而不同，而且对于同一贮氢电极，不同的充放电深度，氢在合金中的扩散系数也不一样，对于这种扩散系数在不同电极中及同一电极不同充放电深度下而不同的原因作出了合理的解释。用电流跃方法求出了电极放电时的交换电流密度及氢原子的反应级数。氢原子的反应级数均小于１。交流阻抗实验表明贮氢电极反应过程是由电荷转移过程和氢原子吸咐过程组成的多多步骤过程。它的阻抗图有两个半园组成，高频区半园对应于电荷转移过程，低频区半园对于氢原子吸咐过程。而且低频区半园随着电极充放电深度的变化而呈现出规律性变化。提出了氢原子吸咐模型对这些实验规律作出了解释。实验还发现电解液中不同添加成分如KiOH，PbO，ZnO和TlCl对电极的性能如活化过程，快速放电能力及过电位值有很大影响。

Caracterização de sistemas vítreos baseados no formador B2O3 e P2O5 dopados com CeO2

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

A molecular dynamics study of a PbO.SiO2 glass and melt

The structures of a PbO.SiO2 glass and melt have been studied using molecular dynamics simulation employing Born-Mayer-Huggins pair potentials. Various pair distribution functions are presented and discussed. Pb-Pb correlations persist in the melt, in agreement with experimental observations. The calculated and experimental radial distribution functions are compared.

Transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence

We report transparent Ni2+-doped ZnO-Al2O3-SiO2 system glass-ceramics with broadband infrared luminescence. After heat-treatment, ZnAl2O4 crystallite was precipitated in the glasses, and its average size increased with increasing heat-treatment temperature. No infrared emission was detected in the as-prepared glass samples, while broadband infrared luminescence centered at 1310 nm with full width at half maximum (FWHM) of about 300 nm was observed from the glass-ceramics. The peak position of the infrared luminescence showed a blue-shift with increasing heat-treatment temperature, but a red-shift with an increase in NiO concentration. The mechanisms of the observed phenomena were discussed. These glass-ceramics are promising as materials for super broadband optical amplifier and tunable laser. (c) 2006 Elsevier Ltd. All rights reserved.

Ni^2＋掺杂透明ZnO-Al2O3-SiO2系微晶玻璃的光学性质

采用传统熔融冷却的方法制备了透明Ni^2＋掺杂ZnO-Al2O3-SiO2系玻璃，结合X-射线、吸收和荧光等测试手段，研究了不同热处理温度对Ni^2＋掺杂透明ZnO-Al2O3-SiO2系微晶玻璃光学性质的影响。由X-射线衍射谱鉴定出微晶玻璃中析出的晶相为ZnAl2O4微晶，其尺寸在13nm以下。玻璃中没有发现近红外发光，而在微晶玻璃中存在宽带近红外发光，其可归属为八面体六配位Ni^2＋离子的^3T2g（^3F）激发态向^3A2g（^3F）基态的跃迁。随热处理温度升高发光强度增强，而发射峰位则发生蓝移；荧

Spectroscopic and fluorescence decay behaviors of Yb3+ -doped SiO2-PbO-Na2O-K2O glass

The spectroscopic and fluorescent decay behaviors of Yb3+-doped SiO2-PbO-Na2O-K2O glass is reported in this work. Yb2O3 contents of 1, 1.5 and 2mol% are added into the glass. Through the measurement of absorption and fluorescence spectra, and fluorescent decay rate at room temperature and at low temperature (18 K), it is found that the nonradiative decay rate of Yb3+ ions is mainly determined by the interaction between residual hydroxyl groups and Yb3+ ions. Concentration quenching effect can be omitted in this glass up to the Yb3+ ion concentration of 8.98 x 10(20)/cm(3). Multiphonon decay rate is also very small because of the large energy gap between F-2(5/2) and F-2(7/2) levels of Yb3+ ions. (c) 2004 Elsevier B.V. All rights reserved.