Engineering thin film semiconductor gas sensors to increase sensitivity and decrease operation temperature

Thin film nanostructured gas sensors typically operate at temperatures above 400°C, but lower temperature operation is highly desirable, especially for remote area field sensing as this reduces significantly power consumption. We have investigated a range of sensor materials based on both pure and doped tungsten oxide (mainly focusing on Fe-doping), deposited using both thermal evaporation and electron-beam evaporation, and using a variety of post-deposition annealing. The films show excellent sensitivity at operating temperatures as low as 150°C for detection of NO2. There is a definite relationship between the sensitivity and the crystallinity and nanostructure obtained through the deposition and heat treatment processes, as well as variations in the conductivity caused both by doping and heat treatmetn. The ultimate goal of this work is to control the sensing properties, including selectivity to specific gases through the engineering of the electronic properties and the nanostructure of the films.

Development of thermoelectric gas sensors for volatile organic compounds

This paper describes the design and development of a thermoelectric gas sensor suitable for the detection of Volatile Organic Compounds (VOCs). In order to enhance the seebeck coefficient of the sensor, we have deposited chromium metal films on a limited area of the glass substrate. Tin oxide thin film was deposited on top of these metal films. The resulting metal/semiconductor film exhibits a high seebeck coefficient of 400 mu V/ degrees C. Platinum catalyst film deposited on the oxide film to create the necessary temperature gradient resulted in further enhancement in the sensitivity of the sensor to target gases. The sensor shows high sensitivity to ppm-change in the concentration of target hydrocarbons at a relatively low temperature of 120 degrees C.

Role of substrate temperature on the properties of Na-doped ZnO thin film nanorods and performance of ammonia gas sensors using nebulizer spray pyrolysis technique

Sodium doped zinc oxide (Na:ZnO) thin films were deposited on glass substrates at substrate temperatures 300,400 and 500 degrees C by a novel nebulizer spray method. X-ray diffraction shows that all the films are polycrystalline in nature having hexagonal structure with high preferential orientation along (0 0 2) plane. High resolution SEM studies reveal the formation of Na-doped ZnO films having uniformly distributed nano-rods over the entire surface of the substrates at 400 degrees C. The complex impedance of the ZnO nano-rods shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 170 to 270 degrees C and thereafter slightly increased. (c) 2013 Elsevier B.V. All rights reserved.

Thermal characterization of SOI CMOS micro hot-plate gas sensors

This work reports on thermal characterization of SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) MEMS (micro electro mechanical system) gas sensors using a thermoreflectance (TR) thermography system. The sensors were fabricated in a CMOS foundry and the micro hot-plate structures were created by back-etching the CMOS processed wafers in a MEMS foundry using DRIE (deep reactive ion etch) process. The calibration and experimental details of the thermoreflectance based thermal imaging setup, used for these micro hot-plate gas sensor structures, are presented. Experimentally determined temperature of a micro hot-plate sensor, using TR thermography and built-in silicon resistive temperature sensor, is compared with that estimated using numerical simulations. The results confirm that TR based thermal imaging technique can be used to determine surface temperature of CMOS MEMS devices with a high accuracy. © 2010 EDA Publishing/THERMINIC.

Multicomponent gas-mixture measurements using an array of gas sensors and an artificial neural-network

An Electronic Nose is being jointly developed between the University of Greenwich and the Institute of Intelligent Machines to detect the gases given off from an oil filled transformer when it begins to break down. The gas sensors being used are very simple, consisting of a layer of Tin Oxide (SnO2) which is heated to approximately 640 K and the conductivity varies with the gas concentrations. Some of the shortcomings introduced by the commercial gas sensors available are being overcome by the use of an integrated array of gas sensors and the use of artificial neural networks which can be 'taught' to recognize when the gas contains several components. At present simulated results have achieved up to a 94% success rate of recognizing two component gases and future work will investigate alternative neural network configurations to maintain this success rate with practical measurements.

Inverse opal gas sensors : Zn(II)-doped tin dioxide systems for low temperature detection of pollutant gases

Focusing here on the effects of zinc doping in a nanocrystalline matrix of tin dioxide, inverse opal prototype sensors are presented and extensively studied as superior candidates for gas sensing applications. Courtesy of factors including controlled porosity, enhanced surface to volume ratio and homogeneous dispersion of species in the crystalline lattice assured by the sol–gel technique, prototype sensors were prepared with high dopant ratios in a range of new compositions. Exploiting their high sensitivities to low-gas concentrations at low working temperatures, and thanks to the presented templated sol–gel approach, the prepared sensors open up new frontiers in compositional control over the sensing oxide materials, consequently widening the possibilities available in on-demand gas sensor synthesis.

Inverse opal nanoassemblies : novel architectures for gas sensors the SnO2:Zn case

A novel technique is here presented, based on inverse opal metal oxide structures for the production of high quality macro and meso-porous structures for gas sensing. Taking advantage of a sol-gel templated approach. different mixed semiconducting oxides with high surface area, commonly used in chemical sensing application, were synthesized. In this work we report the
comparison between SnO₂ and SnO₂:Zn. As witnessed by Scanning and Transmission Electron Microscopy (SEM and TEM) analyses and by Powder x-ray Diffraction (PX RD), highly ordered meso-porous structures were formed with oxide crystalline size never exceeding 20 nm . The filled templates. in form of thick films, were bound to allumina substrate with Pt interdigitated contacts
and Pt heater, through in situ calcination, in order to perform standard electrical characterization. Pollutant gases like CO and NO₂ and methanol. as interfering gas, were used for the targeted electrical gas tests. All samples showed low detection limits towards both reducing and oxidizing species in low temperature measurements. Moreover, the addition of high molar percentages of Zn( II) affected the beha viour of electrical response improv ing the se lecti vity of the proposed system.

Electrospun granular hollow SnO2 nanofibers hydrogen gas sensors operating at low temperatures

In this paper, we present H2 gas sensors based on hollow and filled, well-aligned electrospun SnO2 nanofibers, operating at a low temperature of 150 C. SnO2 nanofibers with diameters ranging from 80 to 400 nm have been successfully synthesized in which the diameter of the nanofibers can be controlled by adjusting the concentration of polyacrylonitrile in the solution for electrospinning. The presence of this polymer results in the formation of granular walls for the nanofibers. We discussed the correlation between nanofibers morphology, structure, oxygen vacancy contents and the gas sensing performances. X-ray photoelectron spectroscopy analysis revealed that the granular hollow SnO2 nanofibers, which show the highest responses, contain a significant number of oxygen vacancies, which are favorable for gas sensor operating at low temperatures. © 2014 American Chemical Society.

Grain size effect on the electrical response of SnO2 thin and thick film gas sensors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Impedance spectroscopy analysis of TiO(2) thin film gas sensors obtained from water-based anatase colloids

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Properties of polycrystalline gas sensors based on d.c. and a.c. electrical measurements

Electrical properties of polycrystalline gas sensors are analyzed by d.c. and a.c. measurements. d.c. electrical conductivity values compared with those obtained by admittance spectroscopy methods help to obtain a detailed 'on line' analysis of conductivity-modulated gas sensors. The electrical behaviour of grain boundaries is obtained and a new design of sensors can be achieved by enhancing the activity of surface states in the detecting operation. A Schottky barrier model is used to explain the grain boundary action under the presence of surrounding gases. The height of this barrier is a function of gas concentration due to the trapping of excess charge generated by gas adsorption at the interface. A comparison between this dependence, and a plot of the real and imaginary components of the admittance versus frequency at different gas concentrations, provides information on the different parameters that play a role in the conduction mechanisms. These methods have been applied to the design of a CO sensor based on tin oxide films for domestic purposes, the characteristics of which are presented.

Conductometric gas sensors based on nanostructured WO3 thin films

Nanostructured WO3 thin films have been prepared by thermal evaporation to detect hydrogen at low temperatures. The influence of heat treatment on the physical, chemical and electronic properties of these films has been investigated. The films were annealed at 400oC for 2 hours in air. AFM and TEM analysis revealed that the as-deposited WO3 film is high amorphous and made up of cluster of particles. Annealing at 400oC for 2 hours in air resulted in very fine grain size of the order of 5 nm and porous structure. GIXRD and Raman analysis revealed that annealing improved the crystallinity of WO3 film. Gas sensors based on annealed WO3 films have shown a high response towards various concentrations (10-10000 ppm) H2 at an operating temperature of 150oC. The improved sensing performance at low operating temperature is due to the optimum physical, chemical and electronic properties achieved in the WO3 film through annealing.

Hydrogen gas sensors based on thermally evaporated nanostructured MoO3 Schottky diode : a comparative study

In this paper, a comparative study of Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors is presented. MoO3 nanostructured films with three different morphologies (nanoplatelets, nanoplateletsnanowires and nano-flowers) were deposited on SiC by thermal evaporation. We compare the current-voltage characteristics and the dynamic response of these sensors as they are exposed to hydrogen gas at temperatures up to 250°C. Results indicate that the sensor based on MoO3 nanoflowers exhibited the highest sensitivity (in terms of a 5.79V voltage shift) towards 1% hydrogen; while the sensor based on MoO3 nanoplatelets showed the quickest response (t90%- 40s).

Oriented graphitic carbon films for hydrogen gas sensors

An oriented graphitic nanostructured carbon film has been employed as a conductometric hydrogen gas sensor. The carbon film was energetically deposited using a filtered cathodic vacuum arc with a -75 V bias applied to a stainless steel grid placed 1cm from the surface of the Si substrate. The substrate was heated to 400°C prior to deposition. Electron microscopy showed evidence that the film consisted largely of vertically oriented graphitic sheets and had a density of 2.06 g/cm3. 76% of the atoms were bonded in sp2 or graphitic configurations. A change in the device resistance of >; 1.5% was exhibited upon exposure to 1 % hydrogen gas (in synthetic, zero humidity air) at 100°C. The time for the sensor resistance to increase by 1.5 % under these conditions was approximately 60 s and the baseline (zero hydrogen exposure) resistance remained constant to within 0.01% during and after the hydrogen exposures.