Dielectric Function of Undoped and Doped Poly2-methoxy-5-(3 `,7 `-dimethyloctyloxy)-1,4-phenylene-vinylene] by Ellipsometry in a Wide Spectral Range

Ellipsometric measurements in a wide spectral range (from 0.05 to 6.5 eV) have been carried out on the organic semiconducting polymer, poly2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene-vinylene] (MDMO-PPV), in both undoped and doped states. The real and imaginary parts of the dielectric function and the refractive index are determined accurately, provided that the layer thickness is measured independently. After doping, the optical properties show the presence of new peaks, which could be well-resolved by spectroscopic ellipsometry. Also for the doped material, the complex refractive index, with respect to the dielectric function, has been determined. The broadening of the optical transitions is due to the delocalization of polarons at higher doping level. The detailed information about the dielectric function as well as refractive index function obtained by spectroscopic ellipsometry allows not only qualitative but also quantitative description of the optical properties of the undoped/doped polymer. For the direct characterization of the optical properties of MDMO-PPV, ellipsometry turns out to be advantageous compared to conventional reflection and transmission measurements.

固着磨料加工工艺对磷酸盐钕玻璃亚表面缺陷的影响

散粒磨料研磨与固着磨料研磨是光学研磨加工过程中的两种主要手段,但两者材料去除的机制不同。目前针对高功率固体激光装置中的主要工作物质——磷酸盐激光钕玻璃的亚表面缺陷(SSD)研究相对较少,因此在实验的基础上,通过系统地研究固着磨料对磷酸盐激光钕玻璃的研磨工艺过程,分析了多种因素,如磨料粒径、载荷大小、机床转速,以及结合剂材料与冷却液等对钕玻璃亚表面缺陷形成的影响,并与散粒磨料研磨工艺所产生的亚表面缺陷进行了比较,对关键工艺参数进行定量,为高质量钕玻璃制造工艺的选型以及进一步优化亚表面缺陷提供了重要的参考数据。

Nd-glass belt lasers with improved beam quality

Nd-doped phosphate glass belt lasers pumped by laser diodes are demonstrated. The Nd-glass belt with a large cross-section and a small Fresnel number is air-cooled to provide around 18-W continuous wave (CW) output power with a beam quality factor of My2

钕离子掺杂和钕铝共掺高硅氧玻璃的光谱性质研究

Nd-doped and Nd-Al-codoped high silica glasses were obtained by sintering porous glass impregnated with Nd3+ and Al3+ ions. The absorption, fluorescence spectra and fluorescence lifetime of Nd-doped and Nd-Al-codoped high silica glasses were measured. The intensity parameters Omega(1), ( t = 2, 4, 6), fluorescence lifetime, radiative quantum efficiency and stimulated emission cross section were calculated by Judd-Ofelt theory. The effect of aluminum codoping on the fluorescence and structural properties of Nd-doped silica glass has been discussed. By comparing the spectroscopic properties with other Nd-doped oxide glasses and commercial silicate glasses, this Nd-doped high silica glass is likely to be a promising laser material for use in high power and high repetition rate lasers.

Low heat and high efficiency Nd:GdVO4 laser pumped by 913 nm

A Nd:GdVO4 crystal is pumped directly into its emitting level at 913 nm for the first time to the best of our knowledge. 3.35 W output laser emitting at 1063 nm is achieved in a 1.1 at.% Nd-doped Nd:GdVO4. The crystal absorbs pumping light of 4.30 W at 913 nm and produces a very low quantity of heat with the opto-optic conversion efficiency of 77.2%. The average slope efficiency is 81.2% from 0.21 W, at the threshold, to 4.30 W of absorbed pump power. Because of the very weakly thermal effect, the near-diffraction-limit beam is easily obtained with beam quality factor of M-2 approximate to 1.1.

Material effects on stress-induced defect generation in trenched silicon-on-insulator structures

We have investigated the influence of the material properties of the silicon device layer on the generation of defects, and in particular slip dislocations, in trenched and refilled fusion-bonded silicon-on-insulator structures. A strong dependence of the ease of slip generation on the type of dopant species was observed, with the samples falling into three basic categories; heavily boron-doped silicon showed ready slip generation, arsenic and antimony-doped material was fairly resistant to slip, while silicon moderately or lightly doped with phosphorous or boron gave intermediate behavior. The observed behavior appears to be controlled by differences in the dislocation generation mechanism rather than by dislocation mobility. The introduction of an implanted buried layer at the bonding interface was found to result in an increase in slip generation in the silicon, again with a variation according to the dopant species. Here, the greatest slip occurred for both boron and antimony-implanted samples. The weakening of the implanted material may be related to the presence of a band of precipitates observed in the silicon near the bonding interface. (C) 2001 The Electrochemical Society.

The degradation of microcystin-LR using doped visible light absorbing photocatalysts

Microcystins are one of the primary hepatotoxic cyanotoxins released from cyanobacteria. The presence of these compounds in water has resulted in the death of both humans and domestic and wild animals. Although microcystins are chemically stable titanium dioxide photocatalysis has proven to be an effective process for the removal of these compounds in water. One problem with this process is that it requires UV light and therefore in order to develop effective commercial reactor units that could be powered by solar light it is necessary to utilize a photocatalyst that is active with visible light. In this paper we report on the application of four visible light absorbing photocatalysts for the destruction of microcystin-LR in water. The rhodium doped material proved to be the most effective material followed by a carbon-modified titania. The commercially available materials were both relatively poor photocatalysts under visible radiation while the platinum doped catalyst also displayed a limited activity for toxin destruction. © 2009 Elsevier Ltd. All rights reserved.

Study of effects of dopants on structure of vitreous semiconductors (GeSe3.5)100-xMx (M = Bi, Sb) using high pressure techniques

An investigation of the problem of controlled doping of amorphous chalcogenide semiconductors utilizing a Bridgman anvil high pressure technique, has been undertaken. Bulk amorphous semiconducting materials (GeSe3.5)100-x doped with M = Bi (x = 2, 4, 10) and M = Sb (x = 10) respectively are studied up to a pressure of 100 kbar down to liquid nitrogen temperature, with a view to observe the impurity induced modifications. Measurement of the electrical conductivity of the doped samples under quasi-hydrostatic pressure reveals that the pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x = 4, 10) semiconductors are markedly different. The pressure effects in Sb-doped semiconductors are quite different from those in Bi-doped material.

磷酸盐钕玻璃表面/亚表面损伤特性实验研究

系统地研究了光学研磨过程中,磨料粒径、载荷大小以及机床转速对钕玻璃表面及亚表面损伤的影响。结果表明,机床转速和载荷基本不改变材料表面粗糙度,而较大载荷或较低机床转速产生较大的亚表面缺陷,表面粗糙度和亚表面缺陷缺陷深度基本与最大磨料粒径呈正比,载荷增倍使亚表面缺陷与表面粗糙度的常数比值增加0.05。研究结果为钕玻璃加工工艺改进提供了参考依据。

双程掺镱光纤放大器的增益特征及优化

比较了掺钕光纤和掺镱光纤对1064nm光放大的特点．基于速率方程和传输方程，数值分析了在915nm泵浦下双程掺镱光纤放大器的增益特征，并且和传统的单程放大进行了比较．分析了信号光和泵浦光，以及粒子数沿着光纤方向的分布特点．最后对双程掺镱光纤放大器进行了优化．

侧面泵浦的短矩形掺钕磷酸盐玻璃光纤激光器

利用光纤－波导耦合器技术侧面泵浦一根4厘米长的短光纤，我们研制得到了一个红外波长的光纤激光器。该激光器的增益介质是横截面为矩形的掺钕磷酸盐玻璃光纤，其纤芯横截面尺寸为1.5×0.5 毫米，数值孔径为0.2。单横模激光可以通过该矩形光纤的增益-导引效应来获得。最大的激光输出功率为1.05瓦，斜率效率为10％。

杂质对掺钕磷酸盐激光玻璃光谱性质的影响

综述了过渡金属杂质（Cu，Fe）和稀土杂质（Dy，Pr，Sm，Ce）对掺钕磷酸盐激光玻璃吸收损耗及Nd^3＋荧光猝灭影响的研究状况。

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

A 20.1 W Solid-State Laser Pumped by 887 nm with High Efficiency and TEM00 Mode

High efficiency, TEM00 mode, high repetition rate laser pumped by 887 nm is reported. 20.1 W output laser emitting at 1064 nm is achieved in a 0.3 at % Nd-doped Nd:YVO4, which absorbs pumping light of 30.7 W at 887 nm. The opto-optic efficiency and the slope efficiency are 65.5 and 88.5%, respectively. The stable Q-switching operation worked well at 100 kHz and the beam quality is near diffraction-limit with M-2 factor measured as M-2 approximate to 1.2. And the pulse waveform is analyzed in this paper.