Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection

InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0 mu m at 77 K, the peak directivity of the detectors is 1.6 x 10(10) cm.Hz(1/2) W-1 at 77 K.

Enhanced mid-infrared transmission in heavily doped n-type semiconductor film based on surface plasmons

Transmission of electromagnetic wave in a heavily doped n-type GaAs film is studied theoretically. From the calculations, an extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies is found. This extraordinary transmission is attributed to the coupling of the surface-plasmon polariton modes and waveguide modes. By selecting a set of groove parameters, the transmission is optimized to a maximum. Furthermore, the transmission can be tuned by dopant concentrations. As the dopant concentration increases, the peak position shifts to higher frequency but the peak value decreases.

Mid-infrared heavily n-doped GaAs extraordinary transmission through subwavelength grooves

Transmission of an electromagnetic wave from a heavily doped n-type GaAs film is studied theoretically. The calculations are performed using the two-dimensional finite-different time-domain method. From the calculations, we find the extraordinary transmission of p-polarized waves through the film with subwavelength grooves on both surfaces at mid-infrared frequencies. By determining a set of groove parameters, we optimize the transmission to as high as 55.2%. We ascribe this extraordinary transmission to the coupling of the surface-plasmon polariton modes and waveguide modes. Such an enhanced transmission device can be useful for mid-infrared wave filters, emitters, and monitors.

Period Continuous Tuning of an Efficient Mid-Infrared Optical Parametric Oscillator Based on a Fan-out Periodically Poled MgO-Doped Lithium Niobate

We report a period continuously tunable, efficient, mid-infrared optical parametric oscillator (OPO) based on a fan-out periodically poled MgO-doped congruent lithium niobate (PPMgLN). The OPO is pumped by a Nd:YAG laser and a maximum idler output average power of 1.65 W at 3.93 mu m is obtained with a pump average power of 10.5 W, corresponding to the conversion efficiency of about 16% from the pump to the idler. The output spectral properties of the OPO with the fan-out crystal are analyzed. The OPO is continuously tuned over 3.78-4.58 mu m (idler) when fan-out periods are changed from 27.0 to 29.4 mu m. Compared with temperature tuning, fan-out period continuous tuning has faster tuning rate and wider tuning range.

Measurement and interpretation of the mid-infrared properties of single crystal and polycrystalline gold

The contribution of electron-phonon scattering and grain boundary scattering to the mid-IR (lambda = 3.392 mum) properties of An has been assessed by examining both bulk, single crystal samples-Au(1 1 1) and Au(1 1 0)-and thin film, polycrystalline An samples at 300 K and 100 K by means of surface plasmon polariton excitation. The investigation constitutes a stringent test for the in-vacuo Otto-configuration prism coupler used to perform the measurements, illustrating its strengths and limitations. Analysis of the optical response is guided by a physically based interpretation of the Drude model. Relative to the reference case of single crystal Au at 100 K (epsilon = - 568 + i17.5), raising the temperature to 300 K causes increased electron-phonon scattering that accounts for a reduction of similar to40 nm in the electron mean free path. Comparison of a polycrystalline sample to the reference case determines a mean free path due to grain boundary scattering of similar to 17 nm, corresponding to about half the mean grain size as determined from atomic force microscopy and indicating a high reflectance coefficient for the An grain boundaries. An analysis combining consideration of grain boundary scattering and the inclusion of a small percentage of voids in the polycrystalline film by means of an effective medium model indicates a value for the grain boundary reflection coefficient in the range 0.55-0.71. (C) 2005 Elsevier B.V. All rights reserved.

Mid-infrared a-b plane response of YBa2Cu3O7-delta as a function of doping and temperature determined by attenuated total reflection

The mid-infrared optical response of c-axis thin films of YBa2Cu3O7-delta has been studied using Otto-configuration attenuated total reflectance. The measured reflectance-angle characteristics are dominated by a strong absorption feature due to the excitation of surface plasmons, and can be modeled to determine the a-b plane dielectric function. The results show that while epsilon(i,) and therefore sigma(r), are temperature independent, \epsilon(r)\ exhibits a moderate decrease with generalized Drude analysis shows that the plasma frequency is independent of temperature, but decreases with decreasing doping. The scattering rate increases with temperature, and also increases with decreasing doping, consistent with stronger coupling in the underdoped regime. The mass-enhancement is small but increases to 30-40% at delta = 0.6. Difficulties in reconciling the results with some current theories of high-T-c materials are discussed. Finally, the surface plasmon propagation lengths and penetration depths are shown to vary systematically with doping. (C) 2003 Elsevier B.V. All rights reserved.

The mid-infrared dielectric function of NBCO in the a-b plane from 85 K to 300 K

Results are reported on the a-b plane dielectric function (epsilon) of thin-film c-axis NdBa2Cu3O7-delta with close to optimal oxygen doping (T-c similar to 90 K) in the mid-infrared (wavelength 3.392 mum) over the temperature range 85 K to 300 K. An attenuated total reflectance technique based on the excitation of surface plasmon polaritons is used. The results show that \epsilon (r)\ decreases quasi-linearly with increasing temperature, while Ei is invariant with temperature to within experimental uncertainties. Representative values are epsilon = [epsilon (r) + i epsilon (i)] = (-12.9 +/- 0.6) + i(23.0 +/- 1.5) at T similar to 295 K and epsilon = (-15.7 +/- 0.7) + i(23.5 +/- 1.1) at T similar to 90 K. The raw data an interpreted in terms of the generalized Drude model which gives effective scattering rates (1/tau*) that increase with temperature from about 3800 cm(-1) at 90 K to about 4300 cm(-1) at 295 K. There are indications of a superlinear T-dependence in the scattering, 1/tau*: a fit to a function of the form 1/tau* = A + BTalpha gives alpha = 2.8 +/- 0.7. The effective plasma frequency, omega (p)*, with an average value of approximately 21 000 cm(-1) was independent of temperature.