Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.

Influence of vapor transport equilibration on the crystal quality and thermal-expansion coefficients of gamma-LiAlO2

gamma-LiAlO2 (LAO) single crystal has been grown by the Czochralski method. However, its quality was deteriorated due to lithium volatilization during the crystal growth. The full width at half maximum value drops from 116.9 to 44.2 arc sec after the LAO slice was treated by vapor transport equilibration at 1000, 1100, and 1200 degrees C/48 h in sequence. The treated slice shows higher optical transmission than the as-grown one in the measured wavelength range of 190-1900 nm, meanwhile, its absorption edge exhibits a blueshift. According to Raman spectra, the treated slice has homogeneous quality at different depths from surface to 0.01 mm. The expansion coefficient of the treated slice for a axis drops from 17.2398x10(-6)/degrees C to 16.5240x10(-6)/degrees C, and that for c axis drops from 10.7664x10(-6)/degrees C to 10.0786x10(-6)/degrees C.

Spectra analysis of a novel Ti-doped LiAlO2 single crystal

LiAlO2 single crystals doped with Ti at concentration 0.2 at.% are grown by the Czochralskl technique with dimensions Phi 42 x 55 mm. Ti ions in the crystal are quadrivalence proven by comparing the absorption and fluorescence spectra of pure LiAlO2 and Ti: LiAlO2. After air and Li-rich atmosphere annealing, the absorption peaks in the range of 600-800nm disappear. We conclude that 682 and 756nm absorption peaks are attributed to the V-Li and V-O absorptions, respectively. The peaks at 716nm and 798nm may stem from the V-Li(+) and F+ absorptions. The colour-centre model can be applied to explain the experimental phenomena. Ti4+-doping produces more lithium vacancies in the LiAlO2 crystal. The intensities of [LiO4] and the associated bonds remain unchanged, which improves the anti-hydrolyzation and thermal stability of LiAlO2 crystals.

Structural, morphological and optical properties of ZnO thin films grown on gamma-LiAlO2 substrate by pulsed laser deposition

ZnO thin films were deposited on the substrates of (100) gamma-LiAlO2 at 400, 550 and 700 degrees C using pulsed laser deposition (PLD) with the fixed oxygen pressure of 20 Pa, respectively. When the substrate temperature is 400 degrees C, the grain size of the film is less than 1 mu m observed by Leitz microscope and measured by X-ray diffraction (XRD). As the substrate temperature increases to 550 degrees C, highly-preferred c-orientation and high-quality ZnO film can be attained. While the substrate temperature rises to 700 degrees C, more defects appears on the surface of film and the ZnO films become polycrystalline again possibly because more Li of the substrate diffused into the ZnO film at high substrate temperature. The photoluminescence (PL) spectra of ZnO films at room temperature show the blue emission peaks centered at 430 nm. We suggest that the blue emission corresponds to the electron transition from the level of interstitial Zn to the valence band. Meanwhile, the films grown on gamma-LiAlO2 (LAO) exhibit green emission centered at 540 nm, which seemed to be ascribed to excess zinc and/or oxygen vacancy in the ZnO films caused by diffusion of Li. from the substrates into the films during the deposition.

γ-LiAlO2晶体生长、改性和热学性质研究

采用快速提拉法生长出了透明、完整的γ-LIAlO2晶体，但是晶体的高熔点和易挥发性限制了γ-LiAlO2晶体质量．采用气相传输平衡法（vapor transport equilibration technique，VTE）工艺对晶体改性，半高宽（FWHM）值从116．9arcsec降至44．2arcsec，继续升高VTE处理温度至1300℃，FWHM值反而升高至55．2arcsec．快速提拉法生长出来晶体，[100]方向和[001]方向的热膨胀系数分别为17．2398×10^-6／K，10．7664×10

Deposition of ZnO thin films on (100) γ-LiAlO2 substrate

Optical properties for ZnO thin films grown on (100) γ-LiAlO2 (LAO) substrate by pulsed laser deposition method were investigated. The c-axis oriented ZnO films were grown on (100) γ-LiAlO2 substrates at the substrate temperature of 550 Celsius degrees. The transmittance of the films was over 85%. Peaks attributed to excitons were shown in absorption spectra, which indicated that thin films had high crystallinity. Photoluminescence spectra with the maximum peak at 540 nm were observed at room temperature, which seemed to be ascribed to oxygen vacancy in the ZnO films caused by diffusion of Li from the substrates into the films during the deposition.

The growth of gamma-LiAlO2 layer with a highly-preferred orientation on (0001) sapphire

Using vapor transport equilibration (VTE) technique we succeeded in the fabrication of single-phase gamma-LiAlO2 layer on (0001) sapphire substrate. X-ray diffraction indicated that the as-fabricated layer was highly textured with [100] orientation at proper VTE treatment temperature range from 1050 degrees C to 1100 degrees C. The main factors affecting the quality of the gamma-LiAlO2 layer were investigated by SEM and transmission spectra. These results reveal the possibility of fabricating gamma-LiAlO2 (100)//sapphire (0001) composite substrate for GaN-based epitaxial film by VTE.

新型衬底γ-LiAlO2的生长和性能

采用温度梯度法生长出了透明的γ-LiAlO2单晶，将（200）面的铝酸锂晶片在空气中1100℃退火70h后表面生成了一层乳白色的缺Li相（LiAl5OR）；然而同样条件下富Li气氛退火处理后，晶片表面变得更透明，而且保持γ-LiAlO2相．相应的晶片摇摆曲线的半高宽降至30arcsec，而空气中退火后却升高到了78arcsec．对比3种晶片的吸收光谱，可以判定：196nm的吸收峰可能来源于Li空位，736nm的吸收峰可能来源于O空位．

VTE法制备γ-LiAlO2／α-Al2O3复合衬底以及腐蚀和退火对其影响

通过气相传输平衡法(VTE)制备了γ-LiAlO2／α-Al2O3复合衬底，使用5％的稀盐酸对其进行腐蚀并在900℃退火72h。利用X射线衍射、偏光显微镜及扫描电镜对复合衬底进行了分析，发现在白宝石α面(11-20)和γ面(1—102)均获得单相多晶的γ-LiAlO2，且后者的择优取向好于前者。腐蚀可以提高样品的择优取向，在5％的稀盐酸中，时间控制在2min左右可获得较好的结果。退火后γ-LiAlO2颗粒质量得到改善，白宝石α面上γ-LiAlO2的质量优于r面上的γ-LiAlO2，两者都出现颗粒长大现象。

提拉法生长大尺寸γ-LiAlO2单晶的研究(英文)

由于与GaN晶格失配小(约1．4％)，γ-LiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。本文使用提拉法生长出了尺寸达Ф5×50mm^3的γ-LiAlO2单晶。对该晶体毛坯的各个有代表性的位置作了X射线粉末衍射(XRPD)分析，结果表明仅仅在晶体毛坯的底部生成了一种缺锂相(LiAl5O8)。γ-LiAlO2晶体化学稳定性差，在室温时轻微水解。当在空气中于1100℃退火70h，γ-LiAlO2晶体挥发出锂组分，在表面产生缺锂相(LiAl5O8)。值得注意的是，在γ-LiAlO2晶体的红外光谱区不存

新型掺杂LiAlO2晶体衬底研究

本文系统研究了LiAlO2晶体及掺钛0．2％原子分数LiAlO2晶体的水解性能，用原子力显微镜对（100）晶片在不同水解时间下的表面形貌进行了观察，对比发现这两种晶体的（100）面均具有极性和易水解性。同时观察到掺钛LiAlO2晶体的抗水解性比纯LiAlO2晶体更好，因为掺钛LiAlO2晶体有更多的Li空位，水解的活性得到降低。

Nonpolar a-plane ZnO films fabricated on (302)gamma-LiAlO2 by pulsed laser deposition

Nonpolar a-plane (1 1 2 0) ZnO films are fabricated on (3 0 2)gamma-LiAlO2 substrate by pulsed laser deposition. When substrate temperature is low, c-plane ZnO is dominant. As growth temperature increases to similar to 500 degrees C, pure (1 1 2 0)-oriented ZnO film can be obtained. The X-ray rocking curve of a-plane ZnO film broadens sharply when growth temperature is up to similar to 650 degrees C; such a broadening may be related to the anisotropic lateral growth rate of (1 12 0)-oriented ZnO grains. Atomic force microscopy reveals the surface morphology changes of ZnO films deposited at different temperatures. Raman spectra reveal that a compressive stress exists in the a-plane ZnO film. (C) 2007 Published by Elsevier B.V.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

LiAlO2衬底上ZnO薄膜的溶胶-凝胶法制备和表征

采用溶胶凝胶法在LiAlO2（302）衬底上制备了ZnO薄膜。用X射线衍射（XRD）和扫描电镜（SEM）对样品的结构和形貌进行了表征。XRD结果表明,随着热处理温度的升高（350℃、450℃、550℃、600℃、800℃）,所得到的薄膜分别为单相ZnAl2O4（350℃）,ZnAl2O4和ZnO的混合相（450℃）以及单相的ZnO（550℃、600℃、800℃）,并且ZnO薄膜C轴择优取向的生长趋势随温度升高相应明显。SEM图像显示,随着热处理温度的升高,ZnO薄膜的粒径相应变大。

Structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs on gamma-LiAlO2

We report the structural and optical properties of nonpolar m-plane GaN and GaN-based LEDs grown by MOCVD on a gamma-LiAlO2 (100) substrate. The TMGa, TMIn and NH3 are used as sources of Ga, In and N, respectively. The structural and surface properties of the epilayers are characterized by x-ray diffraction, polarized Raman scattering and atomic force microscopy (AFM). The films have a very smooth surface with rms roughness as low as 2nm for an area of 10 x 10 mu m(2) by AFM scan area. The XRD spectra show that the materials grown on gamma-LiAlO2 (100) have < 1 - 100 > m-plane orientation. The EL spectra of the m-plane InGaN/GaN multiple quantum wells LEDs are shown. This demonstrates that our nonpolar LED structure grown on the gamma-LiAlO2 substrate is indeed free of internal electric field. The current voltage characteristics of these LEDs show the rectifying behaviour with a turn on voltage of 1-3 V.