Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Transparent p-AgCoO2/n-ZnO diode heterojunction fabricated by pulsed laser deposition

Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ~3.89 eV and they had transmission of~55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ~3.28 eV, an average optical transmission of ~85% and n-type carrier density of~4.6×1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.

A fibre optic evanescent wave sensor for monitoring the rate of pulsed laser deposition of metal thin films

A novel sensing technique for the in situ monitoring of the rate of pulsed laser deposition (PLD) of metal thin films has been developed. This optical fibre based sensor works on the principle of the evanescent wave penetration of waveguide modes into the uncladded portion of a multimode fibre. The utility of this optical fibre sensor is demonstrated in the case of PLD of silver thin films obtained by a Q-switched Nd:YAG laser which is used to irradiate a silver target at the required conditions for the preparation of thin films. This paper describes the performance and characteristics of the sensor and shows how the device can be used as an effective tool for the monitoring of the deposition rate of silver thin films. The fibre optic sensor is very simple, inexpensive and highly sensitive compared with existing techniques for thin film deposition rate measurements

A fibre optic evanescent wave sensor for monitoring the rate of pulsed laser deposition of metal thin films

A novel sensing technique for the in situ monitoring of the rate of pulsed laser deposition (PLD) of metal thin films has been developed. This optical fibre based sensor works on the principle of the evanescent wave penetration of waveguide modes into the uncladded portion of a multimode fibre. The utility of this optical fibre sensor is demonstrated in the case of PLD of silver thin films obtained by a Q-switched Nd:YAG laser which is used to irradiate a silver target at the required conditions for the preparation of thin films. This paper describes the performance and characteristics of the sensor and shows how the device can be used as an effective tool for the monitoring of the deposition rate of silver thin films. The fibre optic sensor is very simple, inexpensive and highly sensitive compared with existing techniques for thin film deposition rate measurements.

Influence of ambient gas on the growth and properties of porous tin-doped indium oxide thin films made by pulsed laser deposition

The laser ablation method was used for depositing porous nanocrystalline indium-tin oxide thin films for gas sensing applications. Samples were prepared at different pressures using three gases (O-2, 0.8N(2):0.2O(2), N-2) and heat-treated in the same atmosphere used for the ablation process. X-ray diffraction results show that the films are not oriented and the grain sizes are in the range between 15 and 40 nm. The grains are round shaped for all samples and the porosity of the films increases with the deposition pressure. The degree of sintering after heat treatment increases for lower oxygen concentrations, generating fractures on the surface of the samples. Film thicknesses are in the range of I pm for all gases as determined from scanning electron microscopy cross-sections. Electrical resistance varies between 36.3 ohm for the film made at 10 Pa pressure in N-2 until 9.35 x 10(7) ohm for the film made at 100 Pa in O-2. (C) 2007 Elsevier B.V. All rights reserved.

Low-temperature, self-nucleated growth of indium-tin oxide nanostructures by pulsed laser deposition on amorphous substrates

Indium-tin oxide nanostructures were deposited by excimer laser ablation in a nitrogen atmosphere using catalyst-free oxidized silicon substrates at 500 degrees C. Up to 1 mbar, nanowires grew by the vapor-liquid-solid (VLS) mechanism, with the amount of liquid material decreasing as the deposition pressure increased. The nanowires present the single-crystalline cubic bixbyite structure, oriented < 100 >. For the highest pressure used, pyramids were formed and no sign of liquid material could be observed, indicating that these structures grew by a vapor-solid mechanism. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

In-situ-Präparation von komplexen supraleitenden und ferroelektrischen Heterostrukturen mittels gepulster Laser-Deposition

In der vorliegenden Arbeit ist die Konstruktion und der Aufbau eines Systems zur gepulsten Laserablation von dünnen Schichten beschrieben. Die hohe Flexibilität der Anlage wird ermöglicht durch einen sechsfach-Targethalter und eine Heizerkonstruktion, die einfachen Substrateinbau, hohe Temperaturhomogenität und einen zugänglichen Temperaturbereich von bis zu 1000°C erlaubt. Durch eine komplexe Laser-Optik, die eine homogene Energiedichte auf dem Target sicherstellt, wird eine optimale Filmqualität erreicht.Durch die Entwicklung einer zweistufigen Prozeßführung für Y-stabilisiertes ZrO2 wird eine Wachstumsbasis hoher kristalliner Qualität für funktionale Oxidschichten auf Silizium zur Verfügung gestellt. Es zeigt sich, daß die dielektrischen Eigenschaften der YSZ Schicht stark vom Sauerstoffgehalt, der Grenzflächenmorphologie sowie der Dicke der ersten Schicht abhängig sind. Basierend auf dieser Schicht wurde BaZrO3 als zusätzliche Pufferschicht für den Hochtemperatursupraleiter (HTSL) YBa2Cu3O7 ? untersucht. Unter Verwendung von SrTiO3 Substraten konnte die dielektrische Konstante von BaZrO3 zu ? ? 65 bestimmt sowie das Dispersionsverhalten mittels modifizierter Debye-Gleichungen erklärt werden. Vergleichende Messungen auf einkristallinen SrTiO3 Substraten zeigen eine erhöhte Übergangstemperatur von 90.2 K und eine wesentliche Verbesserung der Oberflächenrauhigkeit des HTSL von 2 nm (rms) durch die Verwendung von BaZrO3 Schichten hoher Qualität. Eine nur wenige Monolagen dicke zusätzliche BaZrO3 Pufferschicht auf YSZ-gepufferten Silizium Substraten verhindert die Ausbildung von ?9° rotierten YBCO Körnern, die üblicherweise bei der direkten Deposition auf YSZ beobachtet werden. Resistive Messungen mit Übergangstemperaturen oberhalb 89 K sind vergleichbar zu Ergebnissen, die für CeO2/YSZ Pufferschichtkombinationen erreicht werden. Durch kontinuierliche Gitteranpassung wurde eine neue Schichtabfolge YBCO/CeO2/YSZ/BaZrO3 für die Erzeugung bi-epitaxialer Korngrenzen-Josephson Kontake gefunden und deren Epitaxiebeziehungen geklärt. Eine in-situ deponierte Schichtabfolge zeigt mit einer Übergangstemperatur von 91.7 K und einer Übergangsbreite von 0.15 K supraleitende Eigenschaften vergleichbar zu den besten bisher auf diesem Gebiet erreichten Ergebnissen. Voruntersuchungen zur Realisierung eines Josephsonkontaktes mit dieser Schichtabfolge zeigen jedoch, daß die erreichten Eigenschaften für die technologische Anwendung nicht ausreichend sind.Die Verwendung einer YSZ/CeO2 Pufferschichtkombination ermöglicht die Herstellung von c Achsen orientiertem ferroelektrischem SrBi2Ta2O9 auf Silizium. Im Gegensatz hierzu führt die direkte Deposition auf Silizium zu polykristallinem SrBi2Ta2O9 oder zur Ausbildung der Pyrochlor Phase, wenn nur YSZ als Pufferschicht verwendet wird. Obwohl die Polarisierung von SrBi2Ta2O9 in der ab-Ebene liegt, konnte in MFIS Strukturen ein Speicherfenster von maximal 0.87 V beobachtet werden, was eine Verbesserung um nahezu einen Faktor drei im Vergleich zu polykristallinem SrBi2Ta2O9 bedeutet. Messungen an ferroelektrischen Kondesatorstrukturen ergeben Hystereseschleifen mit einer remanenten Polarisierung von Pr = 6.5 µC/cm2 sowie einem Koerzitivfeld von Ec = 35 kV/cm. AFM Messungen im Piezo-Response Modus zeigen ferroelektrische Domänen, die durch Anlegen einer Gleichspannung reversibel umpolarisiert werden können. Im Nicht-Kontakt AFM Modus wurde die lokale Polarisierung der Schichten zu 3.4 µC/cm2 bestimmt. Weiterhin wurde eine alternative Pufferschichtkombination SrZrO3/YSZ zur Erzeugung von a-Achsen orientiertem SrBi2Ta2O9 untersucht. SrZrO3 zeigt a Achsen Orientierung in vier Wachstumsdomänen, die durch ein Model erklärt werden können. Die SrBi2Ta2O9 Schicht zeigt a Achsen sowie (116)-orientierte Körner mit derselben Domänenstruktur. Die dielektrische Konstanten von SrZrO3 und SrBi2Ta2O9 wurden zu ? ? 29 und ? ? 20 bestimmt. Die beobachteten Speicherfenster sind allerdings nicht ferroelektrischer Natur, sondern wahrscheinlich durch mobile Ionen und Ladungsfangstellen in den Pufferschichten verursacht. Die stark abgesenkte dielektrische Konstante von SrBi2Ta2O9 kann durch die im Vergleich zu polykristallinem verkleinerte Korngröße erklärt werden.

Structural, optical and magnetic properties of pulsed laser deposited Co-doped ZnO films

Zn1−xCoxO films with different Co concentrations (with x=0.00, 0.10, 0.15, and 0.30) were grown by pulsed laser deposition (PLD) technique. The structural and optical properties of the films were investigated by grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy and photoluminescence (PL). The magnetic properties were measured by conventional magnetometry using a SQUID and simulated by ab-initio calculations using Korring–Khon–Rostoker (KKR) method combined with coherent potential approximation (CPA). The effect of Co-doping on the GIXRD and Raman peaks positions, shape and intensity is discussed. PL studies demonstrate that Co-doping induces a decrease of the bandgap energy and quenching of the UV emission. They also suggest the presence of Zn interstitials when x≥0.15. The 10% Co-doped ZnO film shows ferromagnetism at 390 K with a spontaneous magnetic moment ≈4×10−5 emu and coercive field ≈0.17 kOe. The origin of ferromagnetism is explained based on the calculations using KKR method.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Nanogravimetric study of lead underpotential deposition on selenium thin films as a semiconductor alloy formation procedure

An electrochemical quartz crystal microbalance Au electrode modified with a Se thin film was used to investigate the electrochemical behavior of lead ad-atoms using underpotential deposition (UPD) conditions. A specific quasi-reversible process was observed during the reduction of Pb2+ on Se thin films in perchloric acid media. The charge density of Pb ad-atoms on Se thin film (46.86 mu C cm(-2)) suggests a recovery of 0.1 monolayers, which is in good agreement with EQCM data. The Se thin film can be successfully alloyed with Pb atoms that are deposited by chronoamperometry using time intervals large enough to allow for diffusion toward the inner Se phase. Linear sweep voltammetry combined with EQCM in perchloric acid was used to characterize the amount of Pb absorbed in the Se thin film. These findings offer a new strategy for alloy formation in semiconductor films using UPD as an effective tool to quantify the exact amount of the incorporated metal.

Structure of PbTe(SiO(2))/SiO(2) multilayers deposited on Si(111)

The structure of thin films composed of a multilayer of PbTe nanocrystals embedded in SiO(2), named as PbTe(SiO(2)), between homogeneous layers of amorphous SiO(2) deposited on a single-crystal Si( 111) substrate was studied by grazing-incidence small-angle X-ray scattering (GISAXS) as a function of PbTe content. PbTe(SiO(2))/SiO(2) multilayers were produced by alternately applying plasma-enhanced chemical vapour deposition and pulsed laser deposition techniques. From the analysis of the experimental GISAXS patterns, the average radius and radius dispersion of PbTe nanocrystals were determined. With increasing deposition dose the size of the PbTe nanocrystals progressively increases while their number density decreases. Analysis of the GISAXS intensity profiles along the normal to the sample surface allowed the determination of the period parameter of the layers and a structure parameter that characterizes the disorder in the distances between PbTe layers. (C) 2010 International Union of Crystallography Printed in Singapore - all rights reserved

PbO-GeO(2) rib waveguides for photonic applications

This work presents for the first time to our knowledge the fabrication and characterization of rib waveguides produced with PbO-GeO(2) (PGO) thin films. The target was manufactured using pure oxides ( 60 PbO-40 GeO(2), in wt%) and amorphous thin films were produced with the RF sputtering technique. PGO thin films present small absorption in the visible and in the near infrared and refractive index of similar to 2.0. The definition of the rib waveguide structure was made using conventional optical lithography followed by plasma etching, performed in a Reactive Ion Etching (RIE) reactor. Light propagation mode in the waveguide structure was analyzed using integrated optic simulation software. Optical loss measurements were performed to determine the propagation loss at 633 nm, for ribs with height of 70 nm and width of 3-5 mu m; experimental values around 2 dB/cm were found for the propagation loss and confirmed the theoretical calculations. The results obtained demonstrate that PGO thin films are potential candidates for application in integrated optics. Published by Elsevier B.V.

Optical properties and transport in PLD-GaN

We present structural, optical and transport data on GaN samples grown by hybrid, two-step low temperature pulsed laser deposition. The band gap of samples with good crystallinity has been deduced from optical spectra. Large below gap band tails were observed. In samples with the lowest crystalline quality the PL spectra are quite dependent on spot laser incidence. The most intense PL lines can be attributed to excitons bounded to stacking faults. When the crystalline quality of the samples is increased the ubiquitous yellow emission band can be detected following a quenching process described by a similar activation energy to that one found in MOCVD grown samples. The samples with the highest quality present, besides the yellow band, show a large near band edge emission which peaked at 3.47 eV and could be observed up to room temperature. The large width of the NBE is attributed to effect of a wide distribution of band tail states on the excitons. Photoconductivity data supports this interpretation.