8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Synthesis and random laser application of ZnO nano-walls: a review

This review paper summarises briefly some important achievements of our recent research on the synthesis and novel applications of nanostructure ZnO such as honeycomb shaped 3-D (dimension) nano random-walls. A chemical reaction/vapour transportation deposition technique was employed to fabricate this structure on ZnO/SiO2/Si substrate without any catalyst and additive in a simple tube furnace to aim the low-cost and high qualified samples. Random laser action with strong coherent feedback at the wavelength between 375 nm and 395 nm has been firstly observed under 355 nm optical excitation with threshold pumping intensity of 0.38 MW/cm(2).

Saturated operation of a transient collisional x-ray laser

Saturation of a low pump energy x-ray laser utilizing a transient inversion mechanism on the 3p-3s transition at 32.63 nm in Ne-like Ti has been demonstrated. A close to saturation amplification was simultaneously achieved for the 3d-3p, J=1-->1 transition at 30.15 nm. Small signal effective transient gain coefficients of g similar to 46 and similar to 35 cm(-1) and gain-length products of 16.7 and 16.9 for these lines were obtained. Experiments demonstrate that it is possible to achieve saturated laser action in a transient regime with Ne-like Ti for a pump energy as low as similar to 5 J.

Extreme ultraviolet line emission at 24.7 nm from Li-like nitrogen plasma produced by a short KrF excimer laser pulse

Recently using KrF high power laser (248 nm; 350 fs; 5.0x10(16) W/cm(2)) in the Rutherford Appleton Laboratory an experimental search for recombination extreme ultraviolet (XUV) laser action in Li-like nitrogen ions was performed. To understand the experimental results of line emission at 24.7 nm in the 3d(5/2)-2p(3/2) transition of the Li-like nitrogen ion a simulation was undertaken using a one-dimensional Lagrangian hydrodynamic code. From the simulation results, we confirmed that there was nonlinear dependence of spectral line emission on the gas density which was well matched to the experimental results. Only a six times increase of the 24.7 nm emission intensity was obtained when the plasma length was increased 1000 times from 1 mu m as an optically thin case to 1 mm. Also, the spatial profile of the electron density and temperature was obtained and the electron temperature was about 40-50 eV which was too high for the optical field ionization x-ray lasing. We could not find evidence of x-ray laser gain. (C) 1996 American Institute of Physics.

The TARANIS laser : A multi-terawatt system for laser plasma physics

The Terawatt Apparatus for Relativistic And Non-linear Interdisciplinary Science (TARANIS), installed in the Centre for Plasma Physics at the Queen's University Belfast, supports a wide ranging science program, including laser-driven particle acceleration, X-ray lasers and high energy density physics experiments. We present (1) an overview of the laser facility, (2) results of preliminary investigations on proton acceleration, laser action at 13.9 nm and Kα sources and (3) speculation on future experiments using these extreme sources.

Conjugated polymer−titania nanoparticle hybrid films : random lasing action and ultrasensitive detection of explosive vapors

We have first demonstrated that a random laser action generated by a hybrid film composed of a semiconducting organic polymer (SOP) and TiO₂ nanoparticles can be used to detect 2,4,6-trinitrotoluene (TNT) vapors. The hybrid film was fabricated by spin-casting SOP solution dispersed with nanosized TiO₂ particles on quartz glass. The SOP in the hybrid film functioned as both the gain medium and the sensory transducer. A random lasing action was observed with a certain pump power when the size (diameter of 50 nm) and concentration (8.9 - 10¹²/cm³) of TiO₂ nanoparticles were optimized. Measurements of fluorescence quenching behavior of the hybrid film in TNT vapor atmosphere (10 ppb) showed that attenuated lasing in optically pumped hybrid film displayed a sensitivity to vapors of explosives more than 20 times higher than was observed from spontaneous emission. This phenomenon has been explained with the four-level laser model. Since the sensory transducer used in the hybrid polymer/nanoparticles system could be replaced by other functional materials, the concept developed could be extended to more general domains of chemical or environment detection.

Spectroscopic properties of Yb3+ doped PbO-Bi2O3-Ga2O3 glasses for IR laser applications

PbO-Bi2O3-Ga2O3 glasses doped with different concentrations of Yb3+ are presented. The spectroscopic properties and laser parameters are calculated and a comparison between different results obtained when calculating the Yb3+ emission cross-section with the reciprocity method and with the Fuchtbauer-Ladenburg formula is presented. The behavior of the near-infrared luminescence is described theoretically by a rate equation and compared with the experimental results. This host doped with Yb3+ is a promising material for laser action at 1019 nm, with properties similar to other known glasses used as active laser media; the emission cross-section of 1.1 x 10(-20) cm(2), the high absorption cross-section (of 2.0 x 10(-20) cm(2)) and a minimum pump intensity of 2.4 kW/cm(2) are interesting properties for short pulse generation. (C) 2005 Elsevier B.V. All rights reserved.

One-dimensional analytical model for oxide thin film growth on Ti metal layers during laser heating in air

This paper presents the theoretical and experimental results for oxide thin film growth on titanium films previously deposited over glass substrate. Ti films of thickness 0.1 μm were heated by Nd:YAG laser pulses in air. The oxide tracks were created by moving the samples with a constant speed of 2 mm/s, under the laser action. The micro-topographic analysis of the tracks was performed by a microprofiler. The results taken along a straight line perpendicular to the track axis revealed a Gaussian profile that closely matches the laser's spatial mode profile, indicating the effectiveness of the surface temperature gradient on the film's growth process. The sample's micro-Raman spectra showed two strong bands at 447 and 612 cm -1 associated with the TiO 2 structure. This is a strong indication that thermo-oxidation reactions took place at the Ti film surface that reached an estimated temperature of 1160 K just due to the action of the first pulse. The results obtained from the numerical integration of the analytical equation which describes the oxidation rate (Wagner equation) are in agreement with the experimental data for film thickness in the high laser intensity region. This shows the partial accuracy of the one-dimensional model adopted for describing the film growth rate. © 2001 Elsevier Science B.V.

Laser emission of a Nd-doped mixed tellurite and zinc oxide glass

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Characterization and optimization of an x-ray laser for the spectroscopy of Li-like heavy-ions

Recent developments in the theory of plasma-based collisionally excited x-ray lasers (XRL) have shown an optimization potential based on the dependence of the absorption region of the pumping laser on its angle of incidence on the plasma. For the experimental proof of this idea, a number of diagnostic schemes were developed, tested, qualified and applied. A high-resolution imaging system, yielding the keV emission profile perpendicular to the target surface, provided positions of the hottest plasma regions, interesting for the benchmarking of plasma simulation codes. The implementation of a highly efficient spectrometer for the plasma emission made it possible to gain information about the abundance of the ionization states necessary for the laser action in the plasma. The intensity distribution and deflection angle of the pump laser beam could be imaged for single XRL shots, giving access to its refraction process within the plasma. During a European collaboration campaign at the Lund Laser Center, Sweden, the optimization of the pumping laser incidence angle resulted in a reduction of the required pumping energy for a Ni-like Mo XRL, which enabled the operation at a repetition rate of 10 Hz. Using the experiences gained there, the XRL performance at the PHELIX facility, GSI Darmstadt with respect to achievable repetition rate and at wavelengths below 20 nm was significantly improved, and also important information for the development towards multi-100 eV plasma XRLs was acquired. Due to the setup improvements achieved during the work for this thesis, the PHELIX XRL system now has reached a degree of reproducibility and versatility which is sufficient for demanding applications like the XRL spectroscopy of heavy ions. In addition, a European research campaign, aiming towards plasma XRLs approaching the water-window (wavelengths below 5 nm) was initiated.

Gain saturation in gas flow and chemical lasers

A theoretical model for gain saturation in gas flow and chemical lasers is presented. The theory is applicable to all possible numerical values of τ/τc, where τ is the characteristie flow time for the flowing gas to move across the laser action region and τc is the characteristic collision relaxation time. The saturation effects of the convection and the "source flow" of the inverted population are revealed. A general relation of gain coefficient and some new gain saturation laws are obtained. For the special case of τ/τc1, the present theoretical results agree with the experimental results on the "anomalous" saturation phenomena in the supersonic diffusion HF chemical laser determined recently by Gross and Coffer[8]. The theory also agrees with the measured results of saturation intensity varying with τ/τc in gas flow CO2 lasers[7]. For the special case of τ/τc1, the present theory is consistent with both the standard theory[1] for gas lasers where the gas has no macroscopic motion and the known gain saturation theory[2-5] for gas flow and chemical lasers.

用半导体激光器对 Yb3+:LYSO 晶体的高效率激光特性的研究

本文报导了采用半导体激光器泵浦的高效连续可调谐Yb:LYSO激光器的输出特性。LYSO晶体同时具有LSO晶体良好的激光性能和YSO晶体易于生长且成本低廉的优点，实验中我们采用5at%掺杂的Yb:LYSO晶体进行研究，获得了最大输出功率2.84W、输出波长1085nm、光-光转换效率54.5%的高效输出。并且得到了1030-1111nm，一共81nm的波长调谐范围，这是目前我们所知道的从Yb:LYSO激光器获得的最宽的调谐输出。

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Photon localization and lasing in disordered GaNxAs1-x optical superlattices

We propose an approach to fabricate a disordered optical superlattice using microcracking faces in GaNxAs1-x epilayers. Laser action is observed and the emission exhibits random laser behaviors. A transfer-matrix simulation suggests photon localization occurs at the lasing modes.