Effect of flooding on survival and initial growth of Ocotea pulchella (Nees) Mez. seedlings in semi-controlled light conditions

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Emergence and initial growth of rambutan seedlings as a function of seed storage conditions

Introduction. Rambutan is a tropical fruit species with recalcitrant seeds. Despite the expansion of exotic fruit cultivation in Brazil, lots of which fruit species, including rambutan, need basic information, especially in relation to propagation and storage of seeds, which are important for genetic improvement studies, maintenance of genetic sources and seedling production. Materials and methods. A completely randomized design was adopted with treatments distributed in a factorial arrangement, 3 x 4, referring to three seed storage conditions [room temperature conditions; a dry chamber with (18 +/- 2) degrees C and 60% relative humidity; and a cold chamber with (10 +/- 2) degrees C and 70% relative humidity] and four storage times ( 0, 7, 14 and 21 d). Each treatment of 10 seeds was replicated five times. Data on seedling emergence, emergence rate, plant height, number of leaves and length of main root were submitted to variance analysis and means were separated using Tukey's test. Correlation analysis between seed moisture and seedling emergence was performed. Results and discussion. Our results indicated that dry chamber conditions promoted the statistically significantly highest seedling emergence after 7 d of storage. Cold chamber conditions promoted an extremely low seedling emergence independently of time. Conclusion. Rambutan seeds can be stored in a dry chamber for 7 d without losing viability; after 14 d of storage the loss of emergence is 60%.

Effect of the density and of the distance of Brachiaria decumbens staff on the initial growth of Coffea arabica L. Seedligns

The aim of this work was to evaluate the interference of three densities (4, 8 and 16 plants/m 2) of Brachiaria decumbens Stapf distributed at three different distances (0, 10 and 20 cm from coffee plants) on the initial growth of Coffea arabica L. seedlings. Dark red Latosoil was used as substrate to fill up 70 liters cement boxes. Coffee seedlings at 15 cm height and 8 leaves stage were planted in each box. B. decumbens seedlings were transplanted when they reached two to four leaves stage. The experimental design was a randomized blocks with ten treatments and three replications. At the end of the experiment were measured, height, leaf number, leaf area, chlorophyll content and dry weight of coffee plants. Dry weight of B. decumbens leaves was also evaluated. The leaf area and leaf dry weight was shown to be more sensitive parameters to the interference of Brachiaria plants. Dry weight of coffee plants were reduced from 60% to 88% when the B. decumbens were transplanted 0 cm from the coffee plant. With distance of 10 cm the reduction of dry weight increased with the increase of the density of the B. decumbens. In the coexistence of the coffee plants with 16 plants/m 2 of B. decumbens, there was a reduction in the dry weight of about 80% at the distances of 0 and 20 cm. Regarding leaf area, the reduction was 47% on the average in the density of 4 plants/m 2 of B. decumbens The reduction in leaf area at other densities was higher at the distance of 0 and 20 cm, and 55% reduction was obtained at the distance of 10 cm.

Morphology and initial growth in the germination of dictyosperma album (bory) h. wendl. & drude ex scheffer (Arecaceae) seeds

Dictyosperma album, commonly known as Princess Palm, due to its graceful appearance and its ability to withstand strong hurricane force winds is largely used in landscaping areas. The aim of this work was to describe the diaspores (seeds with the stuck endocarp) morphology and the stages of the D. album germination process. Therefore we concluded that the species germination is of the tubular remote type and begins with the opening of a circular operculum in the fruit endocarp, through which emerges a bulbous and hollow structure, named cotyledonal petiole or embryophore. With the embryo growth, the endosperm is being gradually consumed. The embryo grows approximately up to 10 cm, when the dilation begins in its extremity. Starting from this extensive area, it begins the growth of the primary root and the opening of a longitudinal rift, through which emerges the aerial part that is composed by two sheaths that cover the first juvenile leaf. In this phase, the emergence of secondary roots is observed. The first leaves are simple and lance-shaped.

ORGANIC RESIDUE AND PHOSPHORUS AS CONDITIONERS OF DEGRADED SOIL AND EFFECTS ON THE INITIAL GROWTH OF Dipteryx alata Vog.

In northwestern Sao Paulo State, it was established, in 1965, the hydroelectric station of Ilha Solteira (CESP) that produced extensive degraded areas, from where it was removed the soil superficial layers. For the re-establishment of the vegetation, in areas like these, it is necessary the addition of chemical inputs and organic material. Associating the presence in the area of macrophytes, to the need of recovery of degraded areas and the availability of seeds from native species of Cerrado, it was intended the development of this work, with the objective of evaluating the addition effects of organic residue and phosphorus on the material of degraded soil and on the initial growth of Dipteryx alata, arboreal species of 'cerrado'. The soil material was collected in area of degraded soil by the construction of Ilha Solteira hydroelectric station. The experiment was conducted in two environmental conditions, greenhouse and plenty of sun. The treatments consisted of four phosphorus doses (0, 100, 200 and 300 mg dm(-3) of P2O5), with or without macrophytes addition, with 16 treatments and 10 repetitions each one. The used macrophytes, collected at Jupia hydroelectric station, in Mato Grosso do Sul state, were dried, sliced, incorporated to the soil material and incubated during 60 days. The seeds of Dipteryx alata, collected around of the area, were sowed in washed sand and after 60 days introduced in the treatments. The plants were appraised monthly for height, stem diameter and leaves chlorophyll. After 210 days, the plants were collected and evaluated for fresh and dry weight of aerial part and radicular system and the soil material was evaluated for fertility and microbial activity by the carbon of liberated CO2. The organic residue, incorporated to the material of soil degraded, positively affects the soil fertility and the soil microbial activity. The applied phosphorus doses influenced the behavior of Ca, SB, H+Al and CTC, when applied in the absence of organic residue, it promoted significant and linear increments for values of potential acidity, and indicated the organic residue importance. The initial growth of the Dipteryx alata was favored by the protected cultivation, for the incorporation of organic residue and for the phosphorus addition to the soil. At the end although the material of degraded soil comes as good perspective for disposal of this residue, studies about the field conditions are necessary.

Initial growth of bauhinia variegata trees under different colored shade nets and light conditions

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Nitrogen immobilization by Congo grass roots impairs cotton initial growth

In crop-livestock integration systems the presence of both grass roots in the soil and straw on the surface can temporarily immobilize nitrogen. This study examined the persistence of grass residues in the system as well as their effects on cotton response to N when grown after Congo grass (Brachiaria ruziziensis, Syn. Urochloa ruziziensis). Congo grass was grown in pots with soil. Next, cotton was grown in the same pots without residues, with whole plant residues (Congo grass roots and shoots) or root residues (grass roots) and fertilized with N as ammonium nitrate. Congo grass and cotton roots were separated using stable carbon isotope fractioning. Congo grass roots showed higher C/N ratio than shoots, losing 14% of its mass after 45 days and increasing soil N immobilization. The lower N availability resulted in N deficient and shorter cotton plants with lower dry matter yields. Nevertheless, the application of 80 to 120 mg kg-1 of N compensated the immobilization by the soil microorganisms, allowing cotton to show normal growth. When Congo grass is present in the cropping system, the effects of the decaying roots on soil N dynamics and availability are more important than those of the straw left on the soil surface.

Change in Apoplastic Aluminum during the Initial Growth Response to Aluminum by Roots of a Tolerant Maize Variety1

Root elongation, hematoxylin staining, and changes in the ultrastructure of root-tip cells of an Al-tolerant maize variety (Zea mays L. C 525 M) exposed to nutrient solutions with 20 μm Al (2.1 μm Al3+ activity) for 0, 4, and 24 h were investigated in relation to the subcellular distribution of Al using scanning transmission electron microscopy and energy-dispersive x-ray microanalysis on samples fixed by different methods. Inhibition of root-elongation rates, hematoxylin staining, cell wall thickening, and disturbance of the distribution of pyroantimoniate-stainable cations, mainly Ca, was observed only after 4 and not after 24 h of exposure to Al. The occurrence of these transient, toxic Al effects on root elongation and in cell walls was accompanied by the presence of solid Al-P deposits in the walls. Whereas no Al was detectable in cell walls after 24 h, an increase of vacuolar Al was observed after 4 h of exposure. After 24 h, a higher amount of electron-dense deposits containing Al and P or Si was observed in the vacuoles. These results indicate that in this tropical maize variety, tolerance mechanisms that cause a change in apoplastic Al must be active. Our data support the hypothesis that in Al-tolerant plants, Al can rapidly cross the plasma membrane; these data clearly contradict the former conclusions that Al mainly accumulates in the apoplast and enters the symplast only after severe cell damage has occurred.

Auxin dynamics after decapitation are not correlated with the initial growth of axillary buds

One of the first and most enduring roles identified for the plant hormone auxin is the mediation of apical dominance. Many reports have claimed that reduced stem indole-3-acetic acid (IAA) levels and/ or reduced basipetal IAA transport directly or indirectly initiate bud growth in decapitated plants. We have tested whether auxin inhibits the initial stage of bud release, or subsequent stages, in garden pea (Pisum sativum) by providing a rigorous examination of the dynamics of auxin level, auxin transport, and axillary bud growth. We demonstrate that after decapitation, initial bud growth occurs prior to changes in IAA level or transport in surrounding stem tissue and is not prevented by an acropetal supply of exogenous auxin. We also show that auxin transport inhibitors cause a similar auxin depletion as decapitation, but do not stimulate bud growth within our experimental time- frame. These results indicate that decapitation may trigger initial bud growth via an auxin-independent mechanism. We propose that auxin operates after this initial stage, mediating apical dominance via autoregulation of buds that are already in transition toward sustained growth.

Initial growth of sunflower in soils with high concentrations of boron and heavy metals.

Phytoremediation studies have been conducted in an area contaminated by heavy metals, located in Piracicaba - SP, Brazil. This area was contaminated accidentally by the addition of auto scrap shredding to the soil and was limed later to reduce heavy metal mobility in the environment. Previous characterization showed that it also presents high concentration of boron, which has limited the initial plant development of some species. As sunflower plants require a high boron supply and the literature describes its use in the phytoremediation of soils contaminated with heavy metals under some conditions, the aim of this work was to evaluate its potential for the remediation of this area. In the present study, the results of preliminary tests are presented, aiming at the evaluation of sunflower plant germination and its initial development when cultivated in the contaminated soil described. Two sunflower hybrids were sown in soils treated with different rates of boron and in the soil from the contaminated area in study. The results showed that sunflower plants had a normal initial development, even in the soil from the contaminated area. Therefore, sunflower is a promising crop and further studies will be developed to evaluate the sunflower efficiency in phytoextraction or phytostabilization of heavy metals in areas where boron contamination also occurs, as is the case in the study area.

Initial growth of sunflower in soils with high concentrations of boron and heavy metals.

2008

Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition

The in situ optical reflectivity measurements are employed to monitor the GaN epilayer growth process above low-temperature AlN buffer layer on c-plane sapphire substrate by metalorganic chemical vapor deposition. It is found that the lateral growth of GaN islands and their coalescence is promoted in the initial growth stage if the AlN buffer layer is treated with a long annealing time and has an optimal thickness: As confirmed by atomic force microscopy observations, the quality of GaN epilayers is closely dependent on the surface morphology of AlN buffer layer, especially the grain size and nuclei density after the annealing treatment. (C) 2004 American Institute of Physics.

The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile

The hydrogen dilution profiling (HDP) technique has been developed to improve the quality and the crystalline uniformity in the growth direction of mu c-Si:H thin films prepared by hot-wire chemical-vapor deposition. The high H dilution in the initial growth stage reduces the amorphous transition layer from 30-50 to less than 10 nm. The uniformity of crystalline content X-c in the growth direction was much improved by the proper design of hydrogen dilution profiling which effectively controls the nonuniform transition region of Xc from 300 to less than 30 nm. Furthermore, the HDP approach restrains the formation of microvoids in mu c-Si: H thin films with a high Xc and enhances the compactness of the film. As a result the stability of mu c-Si: H thin films by HDP against the oxygen diffusion, as well as the electrical property, is much improved. (c) 2005 American Institute of Physics.

Study on growth mechanism of low-temperature prepared microcrystalline Si thin films

Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.

Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process

gamma-Al2O3 films were grown on Si (10 0) substrates using the sources of TMA (AI(CH3)(3)) and O-2 by very low-pressure chemical vapor deposition. The effects of temperature control on the crystalline quality, surface morphology, uniformity and dielectricity were investigated. It has been found that the,gamma-Al2O3 film prepared at a temperature of 1000degreesC has a good crystalline quality, but the surface morphology, uniformity and dielectricity were poor due to the etching reaction between 0, and Si substrate in the initial growth stage. However, under a temperature-varied multi-step process the properties Of gamma-Al2O3 film were improved. The films have a mirror-like surface and the dielectricity was superior to that grown under a single-step process. The uniformity of gamma-Al2O3 films for 2-in epi-wafer was <5%, it is better than that disclosed elsewhere. In order to improve the crystalline quality, the gamma-Al2O3 films were annealed for I h in O-2 atmosphere. (C) 2002 Elsevier Science B.V. All rights reserved.