Low-thermal-budget solution processing of thin films of zinc ferrite and other complex oxides

Further miniaturization of magnetic and electronic devices demands thin films of advanced nanomaterials with unique properties. Spinel ferrites have been studied extensively owing to their interesting magnetic and electrical properties coupled with stability against oxidation. Being an important ferrospinel, zinc ferrite has wide applications in the biological (MRI) and electronics (RF-CMOS) arenas. The performance of an oxide like ZnFe2O4 depends on stoichiometry (defect structure), and technological applications require thin films of high density, low porosity and controlled microstructure, which depend on the preparation process. While there are many methods for the synthesis of polycrystalline ZnFe2O4 powder, few methods exist for the deposition of its thin films, where prolonged processing at elevated temperature is not required. We report a novel, microwave-assisted, low temperature (<100°C) deposition process that is conducted in the liquid medium, developed for obtaining high quality, polycrystalline ZnFe2O4 thin films on technologically important substrates like Si(100). An environment-friendly solvent (ethanol) and non-hazardous oxide precursors (β-diketonates of Zn and Fe in 1:2 molar ratio), forming a solution together, is subjected to irradiation in a domestic microwave oven (2.45 GHz) for a few minutes, leading to reactions which result in the deposition of ZnFe2O4 films on Si (100) substrates suspended in the solution. Selected surfactants added to the reactant solution in optimum concentration can be used to control film microstructure. The nominal temperature of the irradiated solution, i.e., film deposition temperature, seldom exceeds 100°C, thus sharply lowering the thermal budget. Surface roughness and uniformity of large area depositions (50x50 mm2) are controlled by tweaking the concentration of the mother solution. Thickness of the films thus grown on Si (100) within 5 min of microwave irradiation can be as high as several microns. The present process, not requiring a vacuum system, carries a very low thermal budget and, together with a proper choice of solvents, is compatible with CMOS integration. This novel solution-based process for depositing highly resistive, adherent, smooth ferrimagnetic films on Si (100) is promising to RF engineers for the fabrication of passive circuit components. It is readily extended to a wide variety of functional oxide films.

Structural, iono and thermoluminescence properties of heavy ion (100 MeV Si7+) bombarded Zn2SiO4:Sm3+ nanophosphor

Structural, iono (IL) and thermoluminescence (TL) studies of Zn2SiO4:Sm3+ (1-5 mol%) nanophosphor bombarded with swift heavy ions in the fluence range 3.91 x 10(12)-21.48 x 10(12) cm(-2) have been carried out. The average crystallite sizes for pristine and ion irradiated for 3.91 x 10(12) ions cm(-2) and 21.48 x 10(12) ions cm(-2) were found to be 34, 26 and 20 nm. With increase of ion fluence, the intensity of XRD peaks decreases and FWHM increases. The peak broadening indicates the stress induced point/clusters defects produced due to heavy ion irradiation. IL studies were carried out for different Sm3+ concentrations in Zn2SiO4 by irradiating with ion fluence of 15.62 x 10(12) ions cm(-2). The characteristic emission peaks at similar to 562, 599, 646 and 701 nm were recorded by exciting Si7+ ions in the fluence range 3.91 x 10(12)-21.48 x 10(12) ions cm(-2). These peaks were attributed to (4)G(5/2)-> H-6(5/2) (562 nm), (4)G(5/2)-> H-6(7/2) (599 nm), (4)G(5/2)-> H-6(9/2) (646 nm), and (4)G(5/2)-> H-6(5/2) (701 nm) transitions of Sm3+. The highest emission was recorded at 3 mol% of Sm3+ doped Zn2SiO4. TL studies were carried out for 3 mol% Sm3+ concentration in the fluence range 3.91 x 10(12)-21.48 x 10(12) ions cm(-2). Two U glow peaks at 152 and 223 degrees C were recorded. The kinetic parameters (E, b, and s), were estimated using Chen's peak shape method. Simple glow curve structure (223 degrees C), highly resistive, increase in TL. intensity up to 19.53 x 10(12) ions cm(-2), simple trap distribution makes Zn2SiO4:Sm3+ (3 mol%) phosphor highly useful in radiation dosimetry.

Sputtering of the gallium-indium eutectic alloy in the liquid phase

We have measured sputtering yields and angular distributions of sputtered atoms from both the solid and liquid phases of gallium, indium, and the gallium-indium eutectic alloy. This was done by Rutherford backscattering analysis of graphite collector foils. The solid eutectic target shows a predominance of indium crystallites on its surface which have to be sputtered away before the composition of the sputtered atoms equals the bulk target composition. The size of the crystallites depends upon the conditions under which the alloy is frozen. The sputtering of the liquid eutectic alloy by 15 keV Ar⁺ results in a ratio of indium to gallium sputtering yields which is 28 times greater than would be expected from the target stoichiometry. Furthermore, the angular distribution of gallium is much more sharply peaked about the normal to the target surface than the indium distribution. When the incident Ar⁺ energy is increased to 25 keV, the gallium distribution broadens to the same shape as the indium distribution. With the exception of the sharp gallium distribution taken from the liquid eutectic at 15 keV, all angular distributions from liquid targets fit a cos² θ function. An ion-scattering-spectroscopy analysis of the liquid eutectic alloy reveals a surface layer of almost pure indium. A thermodynamic explanation for this highly segregated layer is discussed. The liquid eutectic alloy provides us with a unique target system which allows us to estimate the fraction of sputtered material which comes from the first monolayer of the surface.

River Leven (at Newby Bridge) freeze coring report

This is the River Leven (at Newby Bridge) freeze coring report produced by Lancaster University in 2000. This study looks at fine materials in river Leven that may have to be considered detrimental to successful salmonid spawning. Following an observed decline in quality of salmonid fisheries at the site an investigation was initiated to assess the extent of ingress of fine sediments into the spawning gravels. A broader picture was sought by sampling both above and below the weir and close to both banks of the river. A comparison of the fine sediment from each sample site was undertaken. All the freeze cores used in this report contained distinct horizontal strata down through their length. The cores often penetrated into a highly compacted layer of light grey coloured material. The upper surface of this highly compacted layer is considered as a boundary between fine materials of different origin. Considerable variability was observed in the median grain size (D50) of the gravels from the cores. In addition variability was observed in the thickness of the upper less compacted layers. The role of regulated river flow across the weir in clearing fines from river gravels is briefly considered.

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Sb-doped and undoped ZnO thin films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 Omega cm). Annealing in a nitrogen ambient at 400 degrees C for 1 h made both samples highly resistive (rho > 10(3) Omega cm). Increasing the annealing temperature up to 800 C, the resistivity of the ttndoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 C became semi-insulating with a resistivity of 10(4)Omega cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Degradation of polyimide induced by nitrogen laser irradiation

The degradation behavior of polyimide (PMDA-ODA) induced by nitrogen laser irradiation was studied. The changes in the surface morphology and the composition of the irradiated polyimide films were examined by scanning electron microscopy, X-ray photoelectron spectroscopy and FT-IR spectroscopy. The initial reaction was achieved by photochemical degradation of polyimide in the highly electronic excited state by the absorption of a second 337 nm photon. Atmospheric oxygen sequentially reacted with the produced radicals to form a highly oxidized layer. The formation of carbonyl group was enhanced by the heat remaining on the irradiated polyimide film surfaces. (C) 2000 Elsevier Science B.V. All rights reserved.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.

Microstructural, structural and dielectric properties of Er(3+)-modified BaTi(0.85)Zr(0.15)O(3) ceramics

The (micro)structural and electrical properties of undoped and Er(3+)-doped BaTi(0.85)Zr(0.15)O(3) ceramics were studied in this work for both nominal Ba(2+) and Ti(4+) substitution formulations. The ceramics were produced from solid-state reaction and sintered at 1400 degrees C for 3 h. For those materials prepared following the donor-type nominal Ba(1-x)Er(x)(Ti(0.85)Zr(0.15))O(3) composition, especially, Er(3+) however showed a preferential substitution for the (Ti,Zr)(4+) lattice sites. This allowed synthesis of a finally acceptor-like, highly resistive Ba(Ti,Zr,Er)O(3-delta)-like system, with a solubility limit below but close to 3 cat.% Er(3+). The overall phase development is discussed in terms of the amphoteric nature of Er(3+), and appears to mainly or, at least, partially also involve a minimization of stress effects from the ion size mismatch between the dopant and host cations. Further results presented here include a comparative analysis of the behavior of the materials` grain size, electrical properties and nature of the ferroelectric-to-paraelectric phase transition upon variation of the formulation and Er(3+) content. (C) 2008 Elsevier Ltd. All rights reserved.

The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Desenvolvimento de microcélula eletroquímica para estudos de microrregiões

DEVELOPMENT of AN ELECTROCHEMICAL MICROCELL FOR STUDIES of MICRO REGIONS. The construction and optimization of a device that can be applied to electrochemical studies in flat micro regions are described. This was developed as an attempt to study small regions of metallic samples, whose properties may differ completely from its macroscopic behavior and for studies in highly resistive medium. Some results were obtained for individual grains of polycrystalline samples, welded regions, pure copper, platinum, glassy carbon, single crystals of Cu-Zn-Al alloy, and steel in biodiesel without electrolyte intentionally added. The device showed to be useful for the proposed purpose, allowing to be automated and has potential possibilities of other applications.

Oscillating holograms recorded in photorefractive crystals by a frequency detuned feedback loop

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estudio de la pasivacion de la aleacion Co-Cr-Mo en suero fisiologico

Results are presented on the mechanism of passivation of Co-Cr-Mo biological implant alloys in physiological serum using open circuit potentiometry, potentiodynamic curves, and electrochemical impedance spectroscopy. The potential dependence of impedance data and the analysis of the parameters obtained indicate a progressive diminution of the initial layer thickness and the simultaneous formation of a second higher resistive layer. In more severe conditions than the existent in human body, the metallographic examination of the alloy surface shows localized corrosion in interdendritric regions. Elemental analysis of the surface reveals the presence of higher chromium content in these regions. The presence of chlorine was not detected, which suggested that during preferential attack, soluble species are also formed.

Estudo geofísico regional sobre águas subterrâneas na Ilha do Marajó-Pará-Brasil

Nos últimos dez anos foram realizadas na parte leste da Ilha de Marajó (região dos campos naturais) pelo IDESP e NCGG, mais de 800 SEVs para fins hidrogeológicos. Na época, grande parte dessas SEVs não foram totalmente interpretadas em forma quantitativa, devido à falta de recursos técnicos para fazê-lo de forma eficiente. Agora, usando meios mais modernos para interpretação automática de SEVs, voltou-se a interpretá-las com a finalidade de apresentar uma visão regional dos principais aquíferos da área, agrupar as SEVs em famílias características, testar até que ponto essa interpretação é confiável e propor o modelamento bidimensional como técnica alternativa para interpretar as SEVs realizadas em certos locais da área em questão. Como resultado dessa interpretação, com base na teoria convencional dos meios estratificados, foram definidos três tipos de sistemas de aquíferos. 1. O primeiro, denominado de aquífero profundo, situado a profundidades maiores que 50m, estende-se por toda a região prospectada, estando provavelmente associada às camadas superiores da Formação Marajó ou às litologias altamente resistivas das camadas mais profundas do Grupo Pará. 2. O segundo, denominado de aquífero raso e de média profundidade, localiza-se na parte sul e sudeste da região a profundidades compreendidas entre 10 a 50m, e está associado às lentes arenosas do Grupo Pará. 3. O terceiro, é constituído pelos paleocanais e estruturas similares, distribuídos aleatoriamente na região a pouca profundidade. A partir do estudo detalhado das SEVs, decidiu-se classificá-las em 3 famílias características com seus respectivos tipos e apresentar mapas de localização e da espessura dos aquíferos, bem como mapas de condutância longitudinal total e resistividade média da área. Estes últimos, permitem que se divida a região dos campos da Ilha de Marajó em três zonas principais: 1. Uma, altamente resistiva, situada ao sul e sudeste, a qual coincide com os terrenos aflorantes do Grupo Pará. 2. Outra, altamente condutiva, está localizada no centro e norte, onde se encontram aleatoriamente distribuídos os paleocanais e coincide com os terrenos topograficamente mais baixos, geralmente argilosos e embebidos de água salgada, que são procedentes da erosão dos terrenos circundantes topograficamente mais altos. 3. A última é medianamente resistiva e está relacionada com os terrenos vizinhos à cidade de Chaves (noroeste da região dos campos), os quais apresentam semelhanças com os do sul e sudeste da área. Usando-se a técnica de inversão na interpretação de uma SEV característica de cada família, testou-se, através do seu tratamento estatístico, até que ponto os modelos usados na interpretação dessas SEVs (teoria convencional dos meios estratificados) seriam confiáveis. Conclui-se, então, que a alta correlação existente entre os parâmetros dos modelos assumidos (camadas horizontais, isotrópicas e homogêneas) pode-se dever à utilização de modelos geofísicos muito simples para interpretar a complexa geologia de Marajó. Tendo-se verificado que nem sempre é possível aplicar a teoria das SEVs em meios horizontalmente estratificados para interpretar SEVs obtidas em certos locais de Marajó, os quais muitas vezes apresentam bruscas variações laterais de resistividade, passou-se a demonstrar que estas variações laterais afetam profundamente os dados das SEVs, utilizando-se para isto a técnica dos elementos finitos, a qual leva em conta essa variação bidimensional das propriedades físicas do meio. Foi também possível com esta técnica, modelar uma estrutura rasa, semelhante a um paleocanal, concluindo-se que estes resultados sugerem o emprego, duma forma mais profunda, deste tipo de tratamento para os dados obtidos na região dos campos da Ilha de Marajó.

Modelagem do mCSEM no domínio do tempo usando transformada discreta de Fourier

A modelagem do mCSEM é feita normalmente no domínio da frequência, desde sua formulação teórica até a análise dos resultados, devido às simplificações nas equações de Maxwell, possibilitadas quando trabalhamos em um regime de baixa frequência. No entanto, a abordagem através do domínio do tempo pode em princípio fornecer informação equivalente sobre a geofísica da subsuperfície aos dados no domínio da frequência. Neste trabalho, modelamos o mCSEM no domínio da frequência em modelos unidimensionais, e usamos a transformada discreta de Fourier para obter os dados no domínio do tempo. Simulamos ambientes geológicos marinhos com e sem uma camada resistiva, que representa um reservatório de hidrocarbonetos. Verificamos que os dados no domínio do tempo apresentam diferenças quando calculados para os modelos com e sem hidrocarbonetos em praticamente todas as configurações de modelo. Calculamos os resultados considerando variações na profundidade do mar, na posição dos receptores e na resistividade da camada de hidrocarbonetos. Observamos a influência da airwave, presente mesmo em profundidades oceânicas com mais de 1000m, e apesar de não ser possível uma simples separação dessa influência nos dados, o domínio do tempo nos permitiu fazer uma análise de seus efeitos sobre o levantamento. Como parte da preparação para a modelagem em ambientes 2D e 3D, fazemos também um estudo sobre o ganho de desempenho pelo uso do paralelismo computacional em nossa tarefa.

Analysis of charge-transport properties in GST materials for next generation phase-change memory devices

The quest for universal memory is driving the rapid development of memories with superior all-round capabilities in non-volatility, high speed, high endurance and low power. The memory subsystem accounts for a significant cost and power budget of a computer system. Current DRAM-based main memory systems are starting to hit the power and cost limit. To resolve this issue the industry is improving existing technologies such as Flash and exploring new ones. Among those new technologies is the Phase Change Memory (PCM), which overcomes some of the shortcomings of the Flash such as durability and scalability. This alternative non-volatile memory technology, which uses resistance contrast in phase-change materials, offers more density relative to DRAM, and can help to increase main memory capacity of future systems while remaining within the cost and power constraints. Chalcogenide materials can suitably be exploited for manufacturing phase-change memory devices. Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. Crystalline GST exhibits an almost Ohmic I(V) curve. In contrast amorphous GST shows a high resistance at low biases while, above a threshold voltage, a transition takes place from a highly resistive to a conductive state, characterized by a negative differential-resistance behavior. A clear and complete understanding of the threshold behavior of the amorphous phase is fundamental for exploiting such materials in the fabrication of innovative nonvolatile memories. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron–electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.